Abstract: A pixel circuit includes a photoreceptor module. The photoreceptor module includes a photoelectric conversion element. The photoreceptor module outputs a photoreceptor signal with a voltage level depending on a detector current generated by the photoelectric conversion element. A voltage memory capacitor receives the detector signal at a first electrode. A latch comparator circuit receives a latch input signal based on a shifted voltage signal tapped from a second electrode of the voltage memory capacitor.

Abstract: An image sensor array includes a pixel circuit that generates a pixel output signal, wherein an amplitude of the pixel output signal is related to an intensity of detected light. The pixel circuit passes the pixel output signal to a data signal line for a selection period. A current control capacitor supplies a current to the data signal line through a first electrode in the selection period. A ramp generator generates a voltage ramp signal and passes the voltage ramp signal to a second electrode of the current control capacitor in the selection period.

Abstract: A light detection element includes a substrate on which a plurality of light reception units is arranged in pixel units, and a filter formed over a plurality of adjacent pixels on the substrate, the filter that cuts visible light and transmits infrared light.

Abstract: The present technology relates to a solid-state imaging device and an electronic device enabling improvement of an SN characteristic. A solid-state imaging device includes a pixel array unit provided with multiple unit pixels. Each of the unit pixels includes: a small pixel having a first photoelectric conversion unit and a first on-chip lens configured to allow light to enter the first photoelectric conversion unit; and a large pixel having a second photoelectric conversion unit divided into multiple regions, and a second on-chip lens that can condense more light than the first on-chip lens and allows light to enter the second photoelectric conversion unit. The present technology may be applied to a CMOS image sensor.

Abstract: A solid-state imaging device includes a first semiconductor layer, a second semiconductor layer, and an external terminal. The first semiconductor layer has a pixel region in which a plurality of pixels is arranged, and a peripheral region provided around the pixel region. The second semiconductor layer is stacked on the first semiconductor layer, and is provided with a pixel circuit coupled to the pixels. The external terminal is provided in an opening that communicates with the second semiconductor layer from the peripheral region in the first semiconductor layer. A first isolator is provided in the first semiconductor layer within the peripheral region, and surrounds at least a portion of an outer periphery of the opening. A second isolator is provided in the second semiconductor layer within a region corresponding to the peripheral region, and surrounds at least a portion of the outer periphery of the opening.

Abstract: A circuitry for video image encoding, the circuitry being configured to encode an input video image based on a first set of convolutional kernels of a first neural network convolutional layer and a second set of convolutional kernels of a second neural network convolutional layer, wherein the first set of convolutional kernels is optimized with respect to object representation and the second set of convolutional kernels is optimized with respect to photometric representation.

Abstract: An image sensor according to the present technology includes: a semiconductor substrate in which a plurality of pixels each having a photoelectric conversion element is two-dimensionally arranged; and a magnetic detection unit configured to detect a magnetic change according to a change in a relative position with respect to an imaging lens that guides light from a subject to the pixels.

Abstract: To prevent a decrease in a saturation charge when a phase difference signal is generated. A pixel includes a plurality of photoelectric conversion sections that is formed on a semiconductor substrate and performs photoelectric conversion of incident light from a subject to generate a charge. An intra-pixel separator separates the plurality of photoelectric conversion sections. An overflow path in the intra-pixel separator transfers charges overflowed in the plurality of photoelectric conversion sections to each other. An overflow gate in the pixel and adjusts a potential of the overflow path. A pixel separator is disposed at a boundary between the pixels. A charge holding section holds the generated charge. A charge transfer section is disposed one-by-one for the plurality of photoelectric conversion sections and transfers the generated charge to the charge holding section. An image signal generating section generates an image signal on the basis of the generated charge.

Abstract: A semiconductor device includes a semiconductor substrate, a wiring layer including an electrode pad, the wiring layer formed on a first surface of the semiconductor substrate, a redistribution layer including wiring electrically connected to the electrode pad via a via, the redistribution layer formed on a second surface side opposite to the first surface of the semiconductor substrate, a protective film formed on a surface on a side opposite to the semiconductor substrate in the redistribution layer, and a partition formed by an insulating material, the partition arranged between pieces of wiring in the redistribution layer, in which the partition and a void are alternately formed between the pieces of wiring in a direction in which the wiring extends.

Abstract: An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

Abstract: A solid-state image sensor according to the present disclosure includes a first semiconductor substrate having a photoelectric conversion element and a second semiconductor substrate facing the first semiconductor substrate with an insulating film interposed therebetween, in which the second semiconductor substrate has an amplification transistor that amplifies an electrical signal output from the photoelectric conversion element on a first main surface (MSa), has a region having a resistance lower than a resistance of the second semiconductor substrate on a second main surface (MSb) opposite to the first main surface (MSa), and is grounded via the region.

Abstract: Fabrication processing is executed in a chip of an image sensor. An image capturing device includes an image capturing unit (11) mounted on a vehicle and configured to generate image data by performing image capturing of a peripheral region of the vehicle, a scene recognition unit (214) configured to recognize a scene of the peripheral region based on the image data, and a drive control unit (12) configured to control drive of the image capturing unit based on the scene recognized by the scene recognition unit.

Abstract: A signal processing device according to the present technology includes a feature quantity extraction unit including a neural network and trained to extract a feature quantity for a specific event with respect to an input signal from a sensor, and a correction unit that performs correction of the input signal on the basis of the feature quantity extracted by the feature quantity extraction unit.

Abstract: An antenna device and a wireless communication apparatus capable of implementing increase in bandwidth and reduction of the manufacturing cost are provided. The antenna device includes a first antenna element and a second antenna element arranged on one face side of the first antenna element. The first antenna element includes a first glass substrate and a first patch antenna provided on the first glass substrate. The second antenna element includes a second glass substrate and a second patch antenna provided on the second glass substrate. At least part of the first patch antenna faces the second patch antenna with an air gap interposed therebetween.

Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Abstract: A solid-state imaging element according to the present disclosure includes: a first semiconductor substrate that includes a floating diffusion that temporarily holds an electric signal output from a photoelectric conversion element; and a second semiconductor substrate that faces the first semiconductor substrate, in which the second semiconductor substrate includes a first transistor disposed on a side facing the first semiconductor substrate, the first transistor including: a channel extending along a thickness direction of the second semiconductor substrate; and a multi-gate extending along the thickness direction of the second semiconductor substrate and sandwiching the channel, and the multi-gate of the first transistor is connected to the floating diffusion.

Abstract: There is provided a time of flight sensor. The time of flight sensor includes a light receiving element PD, a first signal line TRGO and a second signal line TRG180, a first transistor TGA in electrical communication with the light receiving element, the first transistor comprising a first gate in electrical communication with the first signal line TRGO, a second transistor TGB in electrical communication with the light receiving element, the second transistor comprising a second gate in electrical communication with the second signal line TRG180, and a control circuit P200 comprising at least one comparator 102A, 102B, wherein the control circuit is in electrical communication with the first and second signal lines TRGO, TRG180. The transistors TGA and TGB of the pixel circuit P100 are turned on and off so that any one of the transistors TGA and TGB is turned on, and the electric charges generated by the photodiode PD are selectively accumulated at the floating diffusion FDA and the floating diffusion FDB.

Abstract: A row driver assembly includes a row driver unit. The row driver unit includes a buffer circuit that drives a control signal to a pixel circuit. The buffer circuit is electrically connected to a high buffer supply voltage and to a low buffer supply voltage. A voltage converter circuit supplies the low buffer supply voltage to the buffer circuit. An error detection circuit outputs an active error signal when the low buffer supply voltage is outside a target voltage window.

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: A solid-state imaging device is provided that enables miniaturization of a pixel and improvement in electrical properties of a transistor of a pixel circuit. The solid-state imaging device includes a first semiconductor layer and a second semiconductor layer. In the first semiconductor layer, a pixel including a photoelectric converter is arranged in a matrix along a plane direction. The number of the pixel is two or more. The second semiconductor layer is stacked on the first semiconductor layer on an opposite side to a light-incoming side of the pixel. In the second semiconductor layer, a first transistor electrically coupled to the pixel is provided. A gate lengthwise direction of the first transistor is inclined with respect to an arrangement direction of the pixel.