Abstract: The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: A wear ring assembly is provided for use in a workpiece (e.g. a semiconductor wafer) polishing apparatus. The wear ring assembly comprises a wear element and a backing ring. The backing ring includes a fulcrum and is configured to transfer a component of pressure applied to the backing ring to the wear element via the fulcrum. In this manner, a substantially uniform vertical displacement of the wear ring is achieved.

Abstract: An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. In another exemplary embodiment, an apparatus for planarizing a workpiece includes at least a first and a second polishing surfaces. The first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus also has a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. In another exemplary embodiment, an apparatus for planarizing a workpiece includes a plurality of polishing stations.

Abstract: Layers of material deposited exhibit both a local and a global pattern. The local pattern is a function of the underlying wafer surface, but the global pattern is a function of the equipment in which the layer was deposited. Accurate reconstruction of the surface topology of a layer on a product wafer is achieved despite the local pattern by determining the surface topology of a blanket layer on a blank wafer, measuring the thickness of the layer at a few selected locations on a product wafer, calculating scaling coefficients representing deviations of the measured thickness from the blanket layer topology, and then multiplying the blanket layer topology by the scaling coefficients. The surface reconstruction results from modifying the surface topology of the blanket layer so that it has the same thickness at the measured locations as does the product wafer layer.

Abstract: A laminated wear ring for a chemical mechanical planarization (CMP) apparatus provides improved control of the removal rate of material from the edge of a wafer during a polishing/planarization operation. The laminated wear ring includes a high stiffness stainless steel base and a plastic laminate. The high stiffness stainless steel base avoids flexing of the wear ring during polishing and thus provides control of the flexing of a polish pad against which the wafer surface is pressed. The plastic laminate protects the stainless steel base from attack by the polishing slurry and provides a buffer that protects the stainless steel base from mechanically damaging the wafer and vice versa.

Abstract: A two sided wafer handling end-effector provides for the efficient loading and unloading of wafers into and out of a wafer processing apparatus. Each side of the end-effector includes spaced apart rotatable catch mechanisms between which a wafer is firmly grasped. When the end-effector is positioned beneath the wafer processing apparatus, the catch mechanisms are rotated to an open position and a lifting surface on the catch mechanisms lifts the wafer into the wafer processing apparatus. When the catch mechanisms are in the open position, the wafer is centered on the end-effector by rotatable rocker assemblies that contact the edge of the wafer. As the end-effector is raised into contact with the processing apparatus, the rocker assemblies rotate to a lowered position in the end-effector while arcuate surfaces on the assemblies maintain contact with the wafer edge.

Abstract: A carrier with adjustable pressure zones and adjustable barriers between zones for distributing the pressure on the backside of a wafer. The pressure zones may be created using an elastic web diaphragm. One or more grooves are formed in the surface of the diaphragm to relieve vacuum formed between the diaphragm and wafer.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: A wafer carrier retaining ring includes a first annular surface that contacts a polishing surface during a polishing process and an inner diameter surface adjoining the first annular surface thereby forming a first annular corner. The first annular corner has a radius in the range of from no less than about 0.010 inches to less than a radius that would result in damage to a wafer being polished. In another embodiment of the invention, a wafer carrier retaining ring includes an inner diameter surface and a second annular surface adjoining said inner diameter surface thereby forming a second annular corner. The second annular corner has a radius of no less than 0.030 inches. In a further embodiment of the invention, a wafer carrier retaining ring is formed of a ceramic material and has a first annular surface having a surface finish of no greater than 2 microinches rms.

Abstract: A homogeneous fixed abrasive polishing article, or pad, including a matrix of a cured resin coated soft filler material having at least one working surface and an abrasive uniformly distributed throughout the filler material. A method for manufacturing the polishing pad includes the steps of mixing a binder, solvent and filler material together; drying the resin coated filler material; grinding the resin coated filler material; sieving the resin coated filler material; mixing an abrasive material with the resin coated filler material; sieving the abrasive material and the resin coated filler material thereby creating a powder material; transferring the powder material to a mold to form a working surface for the polishing pad; compressing the powder material; and curing the powder material. Alternatively, the abrasive may be mixed with the binder, solvent and filler material in the first step instead of later in the process.

Abstract: The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

Abstract: A multiple wafer cleaning apparatus comprising a first module (12), having a first spaced-apart brush assembly having an inner brush (21a) and an outer brush (22a), each brush having a brush pad (102) and a platen (103), and a second module (14) having a second spaced-apart brush assembly (22) having an inner brush (22a) and an outer brush (22b), each brush having a brush pad (102) and a platen (103), each pair of spaced-apart, opposing, vertically disposed brushes (21) and (22) for scrubbing vertically disposed semiconductor wafers (25), in tanks (28). The two modularized sets of motorized, rotating, opposed, pancake shaped brushes (12) and (14), grip the freely rotating wafers (25) causing the wafers (25) to rotate in the same direction as the brushes.

Abstract: A method and apparatus to generate an endpoint signal to control the polishing of thin films on a semiconductor wafer surface includes a through-bore in a polish pad assembly, a light source, a fiber optic cable, a light sensor, and a computer. The light source provides light within a predetermined bandwidth, the fiber optic cable propagates the light through the through-bore opening to illuminate the surface as the pad assembly orbits, and the light sensor receives reflected light from the surface through the fiber optic cable and generates reflected spectral data. The computer receives the reflected spectral data and calculates an endpoint signal by comparing the reflected spectral data with previously collected spectral reference data, calculating a trigger time based on the comparison, and predicting the endpoint time utilizing the trigger time.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: The invention is a slurry distribution system for controlling the distribution of slurry across a top surface of a polishing pad. The polishing pad may be supported by a platen and be part of a polishing station in a chemical mechanical polishing tool. Two juxtaposed perforated manifolds below the polishing pads are used as the primary means of controlling the distribution of slurry. A motor is used to rotate at least one of the perforated manifolds until a desired pattern of aligned perforations below the polishing pad has been achieved. By initially creating the perforations in each manifold in a particular pattern, many different patterns of aligned perforations may be obtained. Patterns may advantageously be made possible that have concentrations of aligned perforations in the center, middle and/or periphery of the manifolds. The polishing pad will have a slurry distribution corresponding to the concentration of aligned perforations in the manifolds.

Abstract: A fluid delivery system is provided for delivering a fluid to a polishing surface of a chemical mechanical polishing tool. The system includes a platen, manifold and slurry delivery conduit. The platen has a plurality of conduits for allowing a fluid to pass to the polishing surface. The manifold, through the use of a plurality of channels, controls the fluid distribution to the conduits in the platen. The channel cross-sectional area at substantially every point is greater than, preferably 1.5 to 2 times, the combined cross-sectional area of all the conduits being serviced by the channel. This results in the conduits being the most restrictive feature and a uniform pressure within the manifold. However, the volume of the channels should also be reduced as this reduces the time necessary for a fluid change over. The slurry delivery conduit communicates fluid from a fluid source to the channels in the manifold.

Abstract: A method for detecting during a planarization process the removal of a first layer of material overlying a workpiece is provided. Relative motion is effected between the first layer and a working surface to remove the first layer. A light having a spectrum of wavelengths is transmitted to the workpiece. The intensity for each of a plurality of reflected wavelengths of a reflected light reflected from the workpiece is measured to obtain a spectrum. The spectrum is a function of the plurality of reflective wavelengths. A spectrum reference value is calculated and a plurality of spectrum difference values are calculated by subtracting the spectrum reference value from the spectrum. An absolute value for each of the plurality of spectrum difference values that is a function of one of the plurality of reflected wavelengths that falls within a selected range of wavelengths is summed together to obtain a delta value. An endpoint parameter is calculated from the delta value.