Abstract: Apparatus for spinning a work piece such as a semiconductor wafer includes a work piece platform that is configured to be rotated about a central axis. Arrayed about the periphery of the platform is a plurality of spaced apart, symmetrically positioned work piece supports. Each of the supports includes a resilient bumper that serves both to support the work piece and as a friction brake to retard slippage of the work piece relative to the platform when the platform and work piece are rotating, and especially when the platform is accelerating or decelerating. Also arrayed about the periphery of the work piece platform is a plurality of work piece gripper assemblies configured to center the work piece in contact with the work piece supports when the platform is rotating. The gripper assemblies include a gripper finger that is configured to pivot about a pivot axis from a non work piece gripping position to a work piece gripping position in response to centrifugal force generated by the rotation of the platform.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: A wafer flattening system is provided to consecutively and automatically remove the natural oxide film from a wafer and flatten and smooth the wafer so as to improve the surface roughness of the wafer and improve the work efficiency. A step of immersing the wafer in an aqueous solution of hydrofluoric acid of a natural oxide film removing device is performed so as to remove the natural oxide film, then followed by a step of locally etching the surface of the wafer at a local etching apparatus by an activated species gas produced from SF6 gas to flatten the surface. Then, a step of giving a mirror finish to the wafer surface by a CMP apparatus is performed to smooth it.

Abstract: An apparatus to generate an endpoint signal to control the polishing of thin films on a semiconductor wafer surface includes a through-hole in a polish pad, a light source, a fiber optic cable, a light sensor, and a computer. A pad assembly includes the polish pad, a pad backer, and a pad backing plate. The pad backer includes a pinhole and a canal that holds the fiber optic cable. The pad backer holds the polish pad so that the through-hole is coincident with the pinhole opening. A wafer chuck holds a semiconductor wafer so that the surface to be polished is against the polish pad. The light source provides light within a predetermined bandwidth. The fiber optic cable propagates the light through the through-hole opening to illuminate the surface as the pad assembly orbits and the chuck rotates. The light sensor receives reflected light from the surface through the fiber optic cable and generates reflected spectral data. The computer receives the reflected spectral data and calculates an endpoint signal.

Abstract: An easily adjustable wafer retaining ring for both coarse and micro-adjustable engagement with a carrier head assembly of a chemical-mechanical polishing apparatus is disclosed. The carrier head supports the wafer on a wafer support surface during the polishing process. The wafer is held in place by a wafer retaining ring which has an inner and an outer set of threads around the inner and outer circumferences of the retaining ring. The carrier head has engagement means for engaging the retaining ring using the inner and outer threads of the retaining ring. The lower surface of the retaining ring has a groove, preferably, v-shaped which is in contact with the carrier head and parallel to the plane of rotational engagement of the retaining ring with the carrier head. A locking ring is receivably engageable with the groove of the retaining ring. A lock limits further vertical displacement of the retaining ring by bearing pressure down on the locking ring.

Abstract: A wafer mapping method and apparatus for automatically determining the location and orientation of workpieces within a workpiece processing tool. An illumination device is provided which directs light toward the edges of the workpieces and a vision system is utilized to receive and process the images obtained from the light which is reflected off the edges of the workpieces.

Abstract: An improvement to chemical-mechanical polishing. The improvement includes using a buffing pad having a geometrically optimized shape along with optimizing the buff head diameter, offset O and overlay L. In one embodiment, the buffing pad is smaller than the buff head and is mounted eccentrically. In another embodiment, the buffing pad has a generally square outer shape. In another embodiment, the buff pad is circular and is the same size as the circular buff head. In another embodiment, the buffing pad has at least three radially extending arms. The optimal configuration is determined iteratively for a selected process by changing the buffing pad shape, buff head diameter, the offset and the overlay. For example, increasing the offset generally tends to increase the removal rate toward the edge of the wafer. Increasing the overlap generally tends to increase the removal rate toward the center of the wafer.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: An apparatus and method are disclosed for a carrier that is able to create independently controllable pressure zones on the back surface of a wafer while the front surface of the wafer is being planarizing against an abrasive surface. The carrier has a central disk shaped recess surrounded by a plurality of concentric ring shaped recesses. The recesses are covered by a diaphragm thereby creating a central disk shaped plenum and a plurality of surrounding ring shaped plenums. A central disk shaped piston and a plurality of surrounding ring shaped pistons are suspended on the diaphragm so that a portion of each piston may move in and out of their corresponding plenum in the carrier. An independently controllable fluid communication path is placed in fluid communication with each plenum thereby allowing the pressure exerted on each piston to be independently controllable.

Abstract: Wafer polishing systems include a series of polish modules alongside a neighboring series of secondary modules. A conveyor travels along the series of polish modules and the series of secondary modules. When a polishing operation is completed, the wafers are transferred to a series of near-by storage modules. The polish modules include a pair of traveling wafer gantries, each of which delivers a wafer to a polishing surface, applying the necessary force to complete polishing of the wafer surface.

Abstract: A wafer flattening process for improving the micro-roughness of a wafer by local etching while maintaining a distance between a plasma discharge location and the wafer surface at a predetermined value. By executing a plasma generating step, SF6 gas in a gas cylinder 31 is fed to the inside of an alumina discharge tube 2, then plasma discharge of the SF6 gas is caused by a plasma generator 1 to produce an activated species gas G and which is locally sprayed from a nozzle portion 20 of the alumina discharge tube 2 to the surface of the silicon wafer W. In this state, by performing a local etching step, the surface of the silicon wafer W is flattened. At this time, the distance from the approximate center of the plasma discharge location to the surface of the silicon wafer W is set to a distance larger than 3000 times the mean free path of the ions in the activated species gas G and smaller than 6000 times.

Abstract: A local etching apparatus and local etching method improving the throughput of the local etching apparatus by preheating a discharge tube before ignition of the plasma discharge. The local etching apparatus is provided with a plasma generator 1, an alumina discharge tube 2, and a heater 6. The heater 6 is constituted by a heating wire 60, a power source 61 for supplying voltage to the heating wire 60, and a voltage regulator 62 for controlling the voltage supplied from the power source 61 to the heating wire 60. Due to this, it is possible to heat the alumina discharge tube 2 to the desired temperature by the heater 6 immediately before the plasma discharge by the plasma generator 1. As a result, there is no need to wait with the local etching work until the alumina discharge tube 2 rises in temperature to the desired temperature due to the heat by the plasma discharge, that is, it is possible to perform the local etching work immediately after the plasma discharge.

Abstract: A machine for polishing semiconductor wafers including a rotatable index table and a drive mechanism for the index table. The index table temporarily accommodates wafers between processing steps. The drive mechanism includes a continuously circulating grooved timing belt that engages gear teeth formed on an outside diameter portion of the index table to effect rotation of the index table. The index table includes a large diameter central opening for accommodating passage of other system components.

Abstract: A fluid metering apparatus includes a gas inlet, a first regulator in fluid communication with the gas inlet and configured to emit the gas at a first gas pressure, and a second regulator in fluid communication with the gas inlet and configured to emit the gas at a second gas pressure. A first valve is in fluid communication with the first regulator and a second valve is in fluid communication with the second regulator. A switch mechanism has two actuators which, when separately actuated, causes either the first valve to be open and the second valve to be closed or the first valve to be closed and the second valve to be open. The apparatus further includes a fluid pressure regulating device having a fluid inlet port which receives a fluid at a fluid inlet pressure, a gas inlet port and a fluid outlet port.

Abstract: A distributed control system for a semiconductor wafer processing machine includes a master control module and a plurality of application control modules. Each of the application control modules and the master control module are capable of autonomous, independent operation. The master control module regulates the operation of the application control modules, and the application control modules govern a number of sub-procedures carried out by the wafer processing machine. The sub-procedures may be governed by respective processing recipes that are downloaded from the master control module to the application control modules via a network link architecture.

Abstract: A method for planarizing the surface of a wafer against a polishing pad includes the steps of securing the wafer in a carrier, pressing the wafer against the polishing pad, rotating both the wafer and pad, and moving the wafer across the polishing pad to create one or more geometric patterns relative to the pad. Geometric patterns employed by the present method include a ‘figure eight’, an elliptical pattern, and a peanut-shaped pattern. In one embodiment of the invention, both a ‘figure eight’ pattern and an elliptical pattern are used during a single planarizing operation. Bezier splines (curves) are used to create geometric patterns employed by the planarizing process.

Abstract: A wafer polishing apparatus includes a wafer polishing assembly having a plurality of wafer carriers for substantially simultaneously polishing a plurality of wafers against a rotating polishing surface. A plurality of wafers to be polished are substantially simultaneously loaded into the plurality of wafer carriers by wafer holding apparatus of an index table. Similarly, a plurality of wafer carriers are substantially simultaneously unloaded into wafer holding apparatus of the index table. The wafer carriers are individually computer controlled for exact polishing and different polishing requirements can be met at the same time by different wafer carriers.