Abstract: A clean room which avoids the problems attendant with the raised floor found in prior art clean rooms uses a perforated floor upon which equipment can be directly placed. The perforated floor includes a regular array of openings through which air can pass to an underlying facility room. The openings are covered by a grate through which the air can pass. In combination the perforated floor and the grates are able to support equipment in any location thereon.

Abstract: An apparatus and method are disclosed for planarizing a wafer in a carrier with adjustable pressure zones and adjustable barriers between zones. The carrier has an independently controlled central zone and concentric surrounding zones for distributing the pressure on the backside of a wafer while the wafer is being pressed against an abrasive surface in a chemical-mechanical polishing tool. The pressure zones may be created by mounting an elastic web diaphragm to a carrier housing that has a plurality of recesses. A corresponding plurality of elastic ring shaped ribs may extend from the web diaphragm opposite the recesses. The plurality of ring shaped ribs thereby defines a central zone surrounded by one or more concentric surrounding zones. The zones and barriers may be individually pressurized by utilizing corresponding fluid communication paths during the planarization process.

Abstract: An apparatus for in situ CMP endpoint detection is presented which includes a probe member for emitting and receiving light signals, a transparent plug mounted over the end of the probe, and a support member located about, and slidably engaged with, the outer circumference of the probe. In use, the plug is inserted into an opening in a polishing pad so that the top of the plug is recessed or coplanar with respect to the polishing surface of the pad and the support member is inserted into an opening in a platen such that a seal is formed between the platen and the support member. The probe member, plug, and/or support member may be disposable and replaceable either alone or in combination.

Abstract: A method for controlling a process in a multi-zonal processing apparatus and specifically for determining the optimum values to set for processing parameters J(Zi) in each of the zones of that apparatus includes processing a test work piece in the apparatus with initial values Jl(Zi) of the parameters in each zone i to achieve a process result Ql(x). Then a process result Qf(x) to be expected from incremental changes in the parameters to values Jf(x) is calculated. The expected process results Qf(x) are related to the initial process results Ql(x) by the relationship: Qf(x)=Ql(x)*Jf(x)/Jl(x). After determining optimum values of J(Zi) to reduce the difference between the expected process result and a target process result, a work piece is processed through the process apparatus using those optimum values of J(Zi).

Abstract: A clean room which uses a perforated floor upon which equipment can be directly placed is presented. The perforated floor includes a regular array of openings through which air can pass to an underlying facility room. The openings are covered by a grate through which the air can pass. In combination the perforated floor and the grates are able to support equipment in any location thereon.

Abstract: The present invention provides a dual purpose workpiece handoff station for intermediately staging a semiconductor wafer, or other workpiece, being transferred between processing stations in, for example, a Chemical-Mechanical Planarization (CMP) machine. The handoff station includes a workpiece processing surface; such as a polishing pad or buffing pad, defining a plurality of apertures for applying fluids, including water, chemicals, slurry, or vacuum, to the surface of a workpiece. In operation, a workpiece carrier moves a polished wafer from a primary polishing surface to the handoff station, and polishes, buffs, or cleans the wafer in the handoff station by rotating the wafer and oscillating the wafer across the handoff station polishing surface while pressing the wafer thereon.

Abstract: An electrochemical deposition apparatus and method for depositing a material onto a surface of a workpiece and for polishing the material are disclosed. The apparatus includes a platen and a polishing surface, including a conductive material and conductors embedded therein, disposed proximate the platen. During material deposition, a bias is applied across the conductor and the platen to cause deposition of material onto the workpiece surface.

Abstract: The present invention includes a platen having a plurality of concentric fluid-tight plenums for receiving fluids. One or more fluid delivery systems may be used to control the flow rate and composition of fluids communicated to the plenums. The top surface of the platen may have holes for allowing the fluids, once inside the plenums, to travel to the top surface of a polishing pad. By controlling the flow rate and composition of fluids, the material removal rate on the front surface of the wafer may also be controlled. The polishing pad is preferably orbited during the planarization process. A metrology instrument may be used for measuring the front surface of the wafer. Data regarding the measurements may be used by a computer to determine if different flow rates and/or composition of fluids should be used to compensate for nonuniform polishing of the wafer.

Abstract: The invention is a carrier that determines if a wafer has been properly loaded. The carrier includes a body having a cavity covered by a membrane, thereby forming an initial plenum. One or more annular ribs may extend from the body to the membrane to divide the initial plenum into a plurality of plenums. A sensor is positioned within one of the plenums to detect the presence of the wafer. Pump(s) with pressure regulators may be used to pressurize the plenum(s). A first plenum may be pressurized sufficient to hold the wafer to the membrane by creating a partial vacuum between the membrane and the wafer. A second plenum may be pressurized sufficient to urge the membrane away from the sensor if the wafer is not properly loaded in the carrier. If the membrane is near the sensor, the wafer has been properly loaded into the carrier.

Abstract: Apparatus for teaching robot station location relative to a work piece apparatus includes an attachment that can be temporarily coupled to the apparatus and positioned in known relationship to the robot station location. A plurality of positional sensors are mounted on the attachment ring, the sensors each configured to produce a signal when a work piece carried by a robot arm is positioned a predetermined distance from the sensor. A signal receiver is configured to receive signals from the sensors and to indicate which of the sensors has produced the signal. The indication may be the activation of an LED display that indicates to an operator what the next movement of the robot arm should be in order to center the work piece with respect to the robot station location.

Abstract: A wafer handling wand allows the efficient loading and unloading of semiconductor wafers to and from a CMP apparatus. The wand includes identical work piece gripping, alignment, and loading/unloading mechanisms on the top and bottom sides. A processed wafer can be unloaded from the apparatus onto one side of the wand and an unprocessed wafer can be loaded into the apparatus from the second side. The gripping mechanism includes a support area and a spaced apart moveable gripping finger. Wafer loading is facilitated by a cam attached to the support area that rotates when the cam contacts the apparatus. Upon rotation, the cam provides a surface for directing the work piece into the apparatus. The surface of the cam also includes an alignment aid that can be brought into contact with a reference surface on the apparatus to insure proper alignment between the wand and the apparatus.

Abstract: The present invention is an apparatus and method for planarizing a front surface of a wafer. The present invention may include a rigid platen, for supporting a polishing pad, connected to a supporting base that has means, or is connected to means, for orbiting the platen. A carrier, preferably a front-reference carrier with a plurality of individually controllable pressure areas, may be used to hold and press the wafer against the polishing pad while the supporting base orbits the rigid platen. The planarization process may be further optimized by orbiting the polishing pad in a radius smaller than 4 mm, orbiting the polishing pad faster than 400 orbits per minute or both.

Abstract: A carrier with adjustable pressure zones and adjustable barriers between zones for distributing the pressure on the backside of a wafer. The pressure zones may be created using an elastic web diaphragm. One or more grooves are formed in the surface of the diaphragm to relieve vacuum formed between the diaphragm and wafer.

Abstract: The invention provides calibrated spectrometers in a multi-spectrometer system, where chemical mechanical polishing endpoint detection is an issue. In one aspect of the invention, a spectrometer is calibrated by selecting a filter slide having a predetermined light transmittance or reflectance variation with location (e.g. angular or linear displacement) on the slide. Light is incident on locations on the filter slide, and this incidence light is either transmitted or reflected. Transmitted or reflected light is received by a spectrometer, and the wavelength measured is compared with the known wavelength that corresponds to its location on the slide. The spectrometer is calibrated by normalizing the wavelength readings obtained at various locations on the slide with the known readings dictated by the reference slide. The spectrometers are also calibrated to a standard light source for intensity of light.

Abstract: The invention is a method for optimizing the geometry of a plurality of zones in a multizone carrier used in a CMP process. This allows a multizone carrier, with a limited number of zones, to be designed that is able to apply, as closely as possible for that number of zones, an optimum pressure on the back surface of a wafer. An optimum pressure profile may be calculated by subtracting a desired post-CMP thickness profile from a typical incoming thickness profile and dividing the remainder by a polishing removal profile. The optimum pressure profile will generally be impossible to achieve with a limited number of zones within a multizone carrier. However, a carrier with an optimum geometry will be able to apply a pressure profile that is as close as possible given the limited number of zones within the carrier. The optimum geometry of the zones may be calculated using a multidimensional optimization procedure.

Abstract: A work piece carrier head for a CMP or other polishing apparatus is configured to eliminate the slow band associated with the polishing of the surface of a work piece. The carrier head includes a wear ring that is positioned circumferentially about the work piece and that together with the work piece is pressed against a moving polishing pad. The wear ring is resiliently coupled to the body of the carrier head in a manner to avoid any overturning moment on the ring caused by the frictional force of the polishing pad against the wear ring.

Abstract: A laminated wear ring for a chemical mechanical planarization (CMP) apparatus provides improved control of the removal rate of material from the edge of a wafer during a polishing/planarization operation. The laminated wear ring includes a high stiffness stainless steel base and a plastic laminate. The high stiffness stainless steel base avoids flexing of the wear ring during polishing and thus provides control of the flexing of a polish pad against which the wafer surface is pressed. The plastic laminate protects the stainless steel base from attack by the polishing slurry and provides a buffer that protects the stainless steel base from mechanically damaging the wafer and vice versa.

Abstract: The invention provides a method of fabricating semiconductor chips that includes modifying physical properties of selected deposit fill layers over patterns having up-features and down-features, with fill to be retained in down-features. The modification enhances chemical mechanical polishing rates, or other polishing, of the modified fill layers to reduce dishing of fill material and achieves this without substantially affecting the electrical properties of the final semiconductor chip product.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: A method and apparatus for determining the endpoint of a planarization process during chemical mechanical planarization (CMP) and more specifically for determining endpoint of a planarization process for a thin metal film deposited on a wafer's surface and/or a method of altering the plating and deplating of the thin metal film during the planarization process. The apparatus includes one or more probes embedded in a working surface. The probes are in electrical communication with the thin film on the wafer's surface as it is planarized against the working surface. The probes measure the thickness of the thin metal film and/or induce a current in the thin metal film to adjust the plating and deplating that occurs during the planarization process.