Abstract: A semiconductor device has a semiconductor die with a first conductive layer formed over the semiconductor die. A first insulating layer is formed over the semiconductor die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is formed over the first and second conductive layers within openings of a second insulating layer. The second insulating layer is removed. The interconnect structure can be a conductive pillar or conductive pad. A bump material can be formed over the conductive pillar. A protective coating is formed over the conductive pillar or pad to a thickness less than one micrometer to reduce oxidation. The protective coating is formed by immersing the conductive pillar or pad into the bath containing tin or indium.

Abstract: A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars.