Abstract: The sensing of the rotor position for synchronizing the drive of a multi-phase brushless motor when driven in a "multi-polar" mode is carried out by interrupting the driving current in at least one of the windings of the motor coupled with a zero-cross sensing circuit of the BEMF signal. This done by using a first logic signal, enabling a logic gate for asserting a zero-cross event detected by the circuit by a third logic signal, and simultaneously resetting the first signal and the third signal after a certain period of time from the instant of interruption.

Abstract: An electronic memory device organized into sections which are in turn divided into blocks formed of cells and their associated decoding and addressing circuits, the cells being connected in a predetermined circuit configuration and each block being included between two opposite contact regions which are interconnected by parallel continuous conduction lines referred to as the bit lines. In the present invention, at least one interruption is provided in each bit line near a contact region by inserting a controlled switch which functions as a block selector. Advantageously, the proposed solution allows each block to be isolated individually by enabling or disabling as appropriate the switches of the cascade connected blocks.

Abstract: An LED driver drives a plurality of light emitting diodes (LEDs) having first terminals connected to a common output stage and second terminals respectively receiving different, suitably rectified, phases of a sinusoidal signal. An output stage of the LED driver includes a first bipolar transistor coupled between a first supply terminal and the first terminals of the LED's. A first MOS transistor drives the base of the first bipolar transistor. The gate of the first MOS transistor is coupled to a first reference voltage. A second bipolar cascode transistor is connected in series with the first MOS transistor and biased by a second reference voltage such that the voltage across the first MOS transistor does not exceed a limit value.

Abstract: In a pulse filtering device, the pulse signal is sampled to enable the counting of this signal by an asynchronous counter. A pulse of calibrated duration is generated when the counting reaches a predetermined number.

Abstract: The device has an SCR structure in a P surface zone of a silicon die. A P+ anode region for connection to an I/O terminal to be protected is formed in an N region, as well as an N+ contact region; an N+ cathode region is formed in another N region for connection to the earth of the integrated circuit. The striking potential of the SCR, that is, the intervention potential of the protection device, is determined by the reverse breakdown of the junction between the first N region and the P-body surface zone. This potential is influenced by an electrode which is disposed over the junction and is connected to the cathode constituting the gate of a cut-off N-channel MOS transistor. The concentrations are selected in a manner such that the P-channel MOS transistor defined by the P region, by the portion of the first region over which the electrode is disposed, and by the P-body, has a conduction threshold greater than the striking potential.

Abstract: In a first operation mode the level shifter transmits as output a logic input signal and in a second operation mode it shifts the high logic level of the input signal from a low to a high voltage. The level shifter comprises a CMOS switch and a pull-up transistor; the CMOS switch comprises an NMOS transistor and a PMOS transistor which are connected in parallel between the input and the output of the shifter and have respective control terminals connected to a first supply line at low voltage and, respectively, to a control line connected to ground in the first operation mode and to the high voltage in the second operation mode; the pull-up transistor is connected between the output of the shifter and a second supply line switchable between the low voltage and the high voltage and has a control terminal connected to the first supply line.

Abstract: The turn-on delay of a current mode switching converter is reduced by an error summing block including a window comparator to the input of which is fed the output voltage of the converter before being filtered by the low pass filter and to which a low threshold and high threshold reference voltages are applied, both of which are referred to the reference voltage of the converter. The error summing block also includes a differentiating circuit whose input is coupled to the so defined "under" output of the window comparator and outputting a pulse of a preestablished duration at the incoming of a rising front of the input signal. Two amplifiers of the same gain K, are also provided, and both are enableable for outputting an amplified signal only when enabled. In addition, two summing circuits are also included.

Abstract: A band-gap reference voltage generator comprises an operational amplifier comprising a first input and a second input, the first input being coupled to a first feedback network and the second input being coupled to a second feedback network both coupled to an output of the operational amplifier providing a reference voltage. The first feedback network contains an emitter-base junction of first bipolar junction transistor and the second feedback network contains an emitter-base junction of second bipolar junction transistor. A selectively activated current supply supplies a bias current to the operational amplifier, the current supply being deactivatable in a substantially zero power consumption operating condition for turning the reference voltage generator off. A start-up circuit activated upon start-up of the reference voltage generator for a fixed, prescribed time interval forces a start-up current to flow through the first bipolar junction transistor means.

Abstract: The circuit is for translating a switching signal disposed between ground level and Vdd to a translated switching signal disposed between first and second voltages Vhsrc and Vhstrap. The circuit includes a bistable circuit formed by two branches which include two nMOS transistors the sources of which are connected to ground and are controlled, respectively, by a switching-on signal and by a switching-off signal derived from the switching signal by means of a buffer and an inverter, respectively. Two pMOS transistors having their sources at the voltage Vhstrap and the drain of one connected to the gate of the other output the translated switching signal at one of their drains. Two further pMOS transistors having gates at the first voltage Vhsrc are interposed between the two nMOS transistors and the two pMOS transistors.

Abstract: A method for forming a plastic package for a power semiconductor electronic device to be encapsulated within a plastic case and to be coupled thermally to a heat sink element having a major surface exposed and at least one peripheral portion extending outwards from at least one side of the plastic case. The method forms the plastic case of the package by molding inside a main cavity of a mold after positioning a heat sink element in a suitable housing provided in a lower portion of the mold which opens into the main cavity of the mold. The method forms the heat sink element such that at least side surfaces jutting out of said side of the plastic case are, at least in a zone adjacent to that side and in the peripheral portion, inclined to form an angle .alpha. substantially greater than zero with a normal line to the major surface, so as to have a negative slope from outside.

Abstract: The present invention relates to a digital-to-analog converter having a plurality of inputs for digital signals, and an output for an analog signal. It also contains a charge integration circuit having an input and an output coupled to the converter output, and a plurality of floating gate MOS transistors corresponding to the plurality of converter inputs, the MOS transistors all having their source and drain terminals coupled together and to the input of the integration circuit, and having control terminals coupleable, under control from the plurality of inputs of digital signals, to different reference voltages having selected fixed values.

Abstract: A memory array is divided, at the design stage, into a plurality of elementary sectors; depending on the specific application and the requirements of the user, the elementary sectors are grouped into composite sectors of desired size and number; a correlating unit memorizes the correlation between each composite sector and the elementary sectors; and, to address a composite sector, the relative address is supplied to the correlating unit which provides for addressing the elementary sectors associated with the addressed composite sector on the basis of the memorized correlation table.

Abstract: The charge injection circuit of this invention comprises at least one pair of floating gate MOS transistors having source and drain terminals which are coupled together and to an injection node, and at least one corresponding pair of generators of substantially step-like voltage signals having an initial value and a final value, and having outputs respectively coupled to the control terminals of said transistors. The signal generators are such that the initial value of a first of the signals is substantially the equal of the final value of a second of the signals, and that the final value of the first signal is substantially the equal of the initial value of the second signal.

Abstract: A nonvolatile memory having a memory array including a plurality of data cells and a read circuit. The read circuit includes a plurality of sense amplifiers, each connected to a respective array branch to be connected to the data cells. The nonvolatile memory also includes a reference generating circuit including a single reference cell arranged outside the memory array and generates a reference signal. The reference generating circuit includes a plurality of reference branches, each connected to a respective sense amplifier, and circuits interposed between the reference cell and the reference branches to supply the reference branches with a signal based on the reference signal.

Abstract: A semiconductor circuit includes a semiconductor layer having a surface and a monolithic output stage formed in the semiconductor layer. The monolithic output stage extends to the surface of the semiconductor layer and has a periphery within the semiconductor layer, an output terminal, and a supply terminal. A barrier well is formed in the semiconductor layer and adjacent to at least a portion of the periphery of the monolithic output stage. The barrier well extends to the surface of the semiconductor layer and has a first conductivity. A diode having first and second diode regions is disposed in the semiconductor layer. The first diode region is coupled to the supply terminal. The diode is operable to prevent current flow from the barrier well to the supply terminal when the voltage between the supply and output terminals has a first polarity.

Abstract: The invention relates to a multi-level storage device including: at least a first plurality of cells storing an identical first number (greater than one) of binary data, and at least a corresponding for second plurality of cells for storing a second number of error check and correcting words equal to said first number, said words being respectively associated with sets of binary data, each including at least one binary data for each cell in said first plurality. In this way, many of the known error correction algorithms can be applied to obtain comparable results to those provided by binary memories. In addition, where multi-level cells are used for storing the error check and correcting words, the device dimension requirements can also be comparable.

Abstract: A vertical structure, integrated bipolar transistor incorporating a current sensing resistor, comprises a collector region, a base region overlying the collector region, and an emitter region over the base region. The emitter region comprises a buried region a surface region, and a first vertical diffusion region connecting the buried layer to the surface region. A second vertical diffusion region connects the buried emitter layer periphery to a first surface contact, while the surface emitter region is contacted, along three peripheral sides thereof, by a second surface contact. The transistor current flows from the substrate, through the base to the buried emitter region. It is then conveyed into the vertical region, which represents a resistive path, and on reaching the surface region splits between two resistive paths included between the vertical region and the surface contacts.

Abstract: The present invention relates to a memory cell including two sets each including first and second transistors connected between high and low potentials, the first transistor being a P-channel transistor and the second one an N-channel transistor. Both sets include a third and a fourth N-channel transistor. The third transistor is connected between the high potential and the control electrode of the second transistor. The fourth transistor is connected between the low potential and the control electrode of the second transistor. The drains of the first and second transistors of each set form storage nodes. The sources and drains of the third and fourth transistors form input/output nodes, distinct from the storage nodes.

Abstract: A process for forming a structure of a high-frequency bipolar transistor on a layer of a semiconductor material with conductivity of a first type. The process includes forming a first shallow base region by implantation along a selected direction of implantation and using a dopant with a second type of conductivity. The region extends from a first surface of the semiconductor material layer and encloses, toward said first surface, an emitter region with conductivity of the first type. In accordance with the invention, the implantation step includes at least one process phase at which the direction of implantation is maintained at a predetermined angle significantly greatly than zero degrees from the direction of a normal line to said first surface. Preferably, the implantation angle is of about 45 degrees.

Abstract: A linear type of voltage regulator, having an input terminal adapted to receive a supply voltage thereon, and an output terminal adapted to deliver a regulated output voltage, includes a power transistor and a driving circuit therefor. The driving circuit includes an operational amplifier having a differential input stage biased by a bias current which varies proportionally with the output current of the regulator.