Patents Assigned to STMicroelectronics A.A.
  • Patent number: 8300015
    Abstract: In relation to a current image from a sequence of images captured by an image sensor, in a first step, a temporary motion vector is determined as a function of reference data comprising a preceding image and a motion vector associated to the preceding image. Then, in a second step, if the temporary motion vector does not satisfy a reliability criterion, the first step is repeated in relation to a following image, on the basis of the same reference data. Otherwise, the temporary motion vector is associated with the current image.
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Pascal Mellot
  • Patent number: 8301977
    Abstract: In a phase change memory, the memory array may be written in relatively small chunks. The writing of data to the array and, particularly, the writing of set data, may be accelerated using a hardware accelerator. The hardware accelerator may include an edge detector which detects a short duration signal pulse to trigger the writing of the set data to a cell. As a result, the writing of data may be accelerated, reducing the time to write in some cases.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics S.r.l.
    Inventors: Meenatchi Jagasivmani, Anthony Ko, Rich E. Fackenthal, Ferdinando Bedeschi, Enzo Donze, Ravi Gutala
  • Patent number: 8299579
    Abstract: An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes a plurality of fingers. A current sensing resistor produces a voltage drop representative of a current delivered to a load by the integrated power transistor. The current sensing resistor includes a portion of a current carrying metal track having a known resistance value and extending between one of the fingers and a connectable point along the current carrying metal track.
    Type: Grant
    Filed: January 25, 2011
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics S.R.L.
    Inventors: Davide Patti, Vincenzo Sciacca
  • Patent number: 8298848
    Abstract: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.
    Type: Grant
    Filed: June 3, 2010
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Christian Rivero, Pascal Fornara
  • Patent number: 8299541
    Abstract: A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: October 30, 2012
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Damien Lenoble, Philippe Coronel, Robin Cerutti
  • Patent number: 8300332
    Abstract: A lens mounting assembly includes a lens barrel with a first lens assembly. A lens mount includes an image sensor, and the lens barrel matingly connects with the lens mount in a manner which allows the first lens assembly to be moved along an optical axis to adjust a focus on the image sensor. A second lens assembly is provided for adjusting the focus on the image sensor during use of the lens. An alignment projection is provided on at least one of the first or second lens assemblies, the alignment projection being adapted to mate with a portion of the other of the first or second lens assemblies in order to directly optically align the first and second lens assemblies with the image sensor.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics (Research & Development) Ltd.
    Inventor: Colin Campbell
  • Patent number: 8298942
    Abstract: A method for forming through vias connecting the front surface to the rear surface of a semiconductor substrate, including the steps of: forming openings in the substrate, thermally oxidizing walls of the openings, filling the openings with a sacrificial material, forming electronic components in the substrate, etching the sacrificial material, filling the openings with a metal, and etching the rear surface of the substrate all the way to the bottom of the openings.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: October 30, 2012
    Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
    Inventors: Richard Fournel, Yves Dodo
  • Patent number: 8299869
    Abstract: A balun including on the common-mode side, an inductive element in series with a first capacitive element between a first common-mode access terminal and the ground; and on the differential-mode side, two inductive windings in series having first respective ends defining differential access terminals and having second common ends connected to ground, second capacitive elements being respectively connected in parallel on the differential-mode windings.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Claire Laporte, Hilal Ezzeddine
  • Patent number: 8301282
    Abstract: In order to reproduce audio signals which have been compressed or encoded for storage or transmission using, for example, MPEG audio encoding, a synthesis sub-band filter is employed which performs an inverse modified discrete cosine transform. The computational cost of the IMDCT implementation is reduced by pre-calculating arrays of sum and difference data. The arrays of sum and difference data are then used in two separate transform calculations, the results of which can be used in the generation of pulse code modulation audio data.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics Asia Pacific Pte Ltd
    Inventors: Sapna George, Haiyun Yang
  • Publication number: 20120267679
    Abstract: A structure for starting a semiconductor component including a porous silicon layer in the upper surface of a semiconductor substrate. This porous silicon layer is contacted, on its upper surface side, by a metallization and, on its lower surface side, by a heavily-doped semiconductor region.
    Type: Application
    Filed: April 17, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics (Tours) SAS
    Inventor: Samuel Menard
  • Publication number: 20120269206
    Abstract: A deserializer circuit includes demultiplexer circuitry configured to receive serial data from an input and output a plurality of divided data outputs, and multiplexer circuitry configured to receive a first logic level at a first input of said multiplexer circuitry, and receive a second logic level at a second input of said multiplexer circuitry and receive one of said divided data outputs at a control input of said multiplexer circuitry. The outputs of the multiplexer circuitry produce the received serial data in a parallel form.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 25, 2012
    Applicants: STMICROELECTRONICS S.A., UNIVERSITE DE MONASTIR, STMICROELECTRONICS SRL
    Inventors: Mounir Zid, Alberto Scandurra, Carmelo Pistritto, Rached Tourki
  • Publication number: 20120266452
    Abstract: A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.
    Type: Application
    Filed: July 3, 2012
    Publication date: October 25, 2012
    Applicants: STMicroelectronics (Grenoble) SAS, STMicroelectronics, Inc.
    Inventors: Olivier Le Neel, Pascale Dumont-Girard, Chengyu Niu, Fuchao Wang, Michel Arnoux
  • Publication number: 20120269305
    Abstract: A receive channel offset correction scheme utilizes “eye edge” samplers and demultiplexers already present and essential for operation of the CDR algorithm, and adds only simple word-rate logic, with no new analog circuitry. The result is the ability to precisely determine the offset polarity as well as to get an approximate immediate measure of the offset magnitude. The offset detected includes all of the analog circuitry in the channel, including the samplers themselves.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics (Canada) Inc.
    Inventors: John Hogeboom, Pat Hogeboom-Nivera
  • Publication number: 20120267720
    Abstract: Methods and apparatus of integrating a buried-channel PMOS into a BiCMOS process. The apparatus comprises at least one bipolar transistor and at least one MOS device coupled to the at least one bipolar transistor, such that a gate of the at least one MOS device may be coupled to an emitter of the at least one bipolar transistor. The MOS device comprises a buried channel having mobility means, such as strained silicon for promoting hole mobility in the buried channel, and confinement means, such as a cap layer disposed proximate to the buried channel for limiting leakage of holes from the buried channel. The apparatus may be formed by exposing a substrate in a PMOS, forming a SiGe layer on the substrate, forming an oxide layer on the SiGe layer, masking the PMOS, and removing at least some of the oxide and at least some of the SiGe layer.
    Type: Application
    Filed: July 2, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics Inc.
    Inventor: Prasanna Khare
  • Publication number: 20120267746
    Abstract: The photo detector array is configured to generate pulses with short rise and fall times because each Geiger mode avalanche photodiode includes an anode contact, a cathode contact, an output contact electrically insulated from the anode and cathode contacts, a semiconductor layer, and at least one shield or metal structure in the semiconductor layer capacitively coupled to the semiconductor layer and coupled to the output contact. The output contacts of all Geiger mode avalanche photodiodes are connected in common and are configured to provide for detection of spikes correlated to avalanche events on any avalanche photodiode of the array.
    Type: Application
    Filed: April 30, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics S.r.l.
    Inventors: Delfo Nunziato SANFILIPPO, Giovanni CONDORELLI
  • Publication number: 20120268189
    Abstract: A switching circuit is electrically coupled between a connection terminal and an output terminal of a transmission channel and includes first and second switching transistors electrically coupled in series to each other and having respective body diodes in anti-series, between the connection terminal and the output terminal. The switching circuit comprises a bootstrap circuit connected to respective first and second control terminals of these first and one second switching transistors, as well as to respective first and second voltage references. The bootstrap circuit includes a first parasitic capacitance electrically coupled between the first control terminal and a first bootstrap node, and a second parasitic capacitance electrically coupled between the second control terminal and a second bootstrap node. The parasitic capacitances have value of at least one order of magnitude lower with respect to the gate-source capacitances of the first and second switching transistors.
    Type: Application
    Filed: June 29, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics S.r.l.
    Inventors: Sandro Rossi, Antonio Ricciardo, Davide Ugo Ghisu
  • Publication number: 20120268177
    Abstract: A fractional rate LC VCO and compensating divider circuit to avoid bit-rate interference includes an LC PLL having an input for receiving a reference clock signal, an N-stage ring VCO with rotating injection having an input coupled to an output of the LC PLL and an output for providing an output clock signal, a first divider circuit having an input coupled to an output of the N-stage ring VCO and an output coupled to the LC PLL, a second divider circuit having an input coupled to the output of the LC PLL, and an M-stage reference ring PLL having an input coupled to an output of the second divider and an output coupled to the N-stage ring VCO.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics (Canada) Inc.
    Inventors: John Hogeboom, Pat Hogeboom-Nivera, Anton Pelteshki
  • Publication number: 20120268168
    Abstract: A clock gate includes a first Muller gate that receives at its inputs a clock signal and an enable signal. The output of the first Muller gate is applied, with a delayed version of the clock signal, to a second Muller gate. A logic circuit operates to logically combine the output of the second Muller gate with a delayed version of the clock signal. The output of the logic circuit provides a gated clock output.
    Type: Application
    Filed: April 19, 2012
    Publication date: October 25, 2012
    Applicants: STMICROELECTRONICS SRL, STMICROELECTRONICS S.A.
    Inventors: Mounir Zid, Alberto Scandurra
  • Publication number: 20120270360
    Abstract: A detector array for an imaging system may exploit the different sensitivities of array pixels to an incident flux of low energy photons with a wavelength falling near the high end of the range of sensitivity of the semiconductor. The detector array may provide the de-multiplexable spatial information. The detector array may include a two-terminal multi-pixel array of Schottky photodiodes electrically connected in parallel.
    Type: Application
    Filed: June 27, 2012
    Publication date: October 25, 2012
    Applicant: STMICROELECTRONICS S.R.L.
    Inventor: MASSIMO CATALDO MAZZILLO
  • Publication number: 20120269255
    Abstract: A DFE filter includes an input, a first filter loop coupled to the input for providing an odd bit-stream, and a second filter loop coupled to the input for providing an even bit-stream, wherein the first and second filter loops are identical and interleaved.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 25, 2012
    Applicant: STMicroelectronics (Canada) Inc.
    Inventors: Anton Pelteshki, John Hogeboom