Abstract: Disclosed is a method of locking a locked loop quickly, including receiving an input signal having an input frequency, and generating an intermediate signal having an intermediate frequency intended to be equal to a geometric mean of the input frequency and a desired frequency, but not equal. Results of division of the desired output frequency by the intermediate frequency are estimated, producing a first divider value. A first locked loop utilizing a controllable oscillator is activated. A divider value of the first locked loop is set to the first divider value, and the intermediate signal is provided to the first locked loop, so that when the first locked loop reaches lock, the controllable oscillator produces the desired frequency. When the first locked loop reaches lock, a second locked loop that utilizes the controllable oscillator is activated, the first locked loop is deactivated, and generation of the intermediate signal is ceased.

Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium. In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

Abstract: An image sensor includes a control circuit and pixels. Each pixel includes: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area. First and second insulated vertical electrodes electrically connected to each other are positioned opposite each other and delimit the storage area. The first electrode extends between the storage area and the photosensitive area. The second electrode includes a bent extension opposite a first end of the first electrode, with the storage area emerging onto the photosensitive area on the side of the first end. The control circuit operates to apply a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block charge transfer.

Abstract: A power supply voltage is monitored by a monitoring circuit including a band gap voltage generator core including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the band gap voltage generator core generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

Abstract: In an embodiment, a PWM modulation circuit includes a first circuit block configured to receive a square wave input signal and produce from the square wave input signal a triangular wave signal, a second circuit block configured to receive a modulating signal and produce a PWM signal by comparing the modulating signal with a carrier signal, a switching circuit block coupled between the first circuit block and the second circuit block and sensitive to reference signals having upper and lower reference values and selectively switchable between a carrier transfer setting in which the switching circuit block couples the first circuit block to the second circuit block to transfer the triangular wave signal as the carrier signal, and one or more carrier forcing settings for optimizing or inhibiting pulse skipping in the PWM signal, wherein the switching circuit block forces the carrier signal to the upper and lower reference values, respectively.

Abstract: Disclosed herein is a touch screen controller for controlling touch sensing in a touch screen display, the touch screen display having a display layer controlled as a function of horizontal sync and vertical sync signals and a capacitive touch array comprised of drive lines and sense lines. The touch screen controller includes a driver and control circuitry. The control circuitry is configured to cause the driver to generate a driving signal on the drive lines during assertion of the horizontal sync signal, and cause the driver to generate the driving signal on the drive lines during assertion of the vertical sync signal. Analog touch sensing circuitry is configured to generate analog touch data as a function of signals on the sense lines resulting from generation of the drive signal on the drive lines.

Abstract: An electronic device includes a test voltage generation circuit to generate a test voltage as a function of a regulator voltage, and a switching circuit to receive the test voltage and an image pixel output signal, and to pass the test voltage as output when in a test mode. A comparison circuit receives the output from the switching circuit and an analog to digital conversion signal, and asserts a counter reset signal when the output from the switching circuit and the analog to digital conversion signal are equal in voltage. A counter begins counting at a beginning of each test cycle within the test mode, stops counting upon assertion of the counter rest signal, and outputs its count upon stopping counting. The count is proportional to the test voltage when in the test mode.

Abstract: An integrated circuit includes at least one antifuse element. The antifuse element is formed from a semiconductor substrate, a trench extending down from a first face of the semiconductor substrate into the semiconductor substrate, a first conductive layer housed in the trench and extending down from the first face of the semiconductor substrate into the semiconductor substrate, a dielectric layer on the first face of the semiconductor substrate, and a second conductive layer on the dielectric layer. A program transistor selectively electrically couples the second conductive layer to a program voltage in response to a program signal. A program/read transistor selectively electrically couples the first conductive layer to a ground voltage in response to the program signal and in response to a read signal. A read transistor selectively electrically couples the second conductive layer to a read amplifier in response to the read signal.

Abstract: Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.

Abstract: An electronic device includes a plurality of charge-to-current converters each including a first NMOS transistor having a source coupled to a sense line, a first capacitor between a gate and source of the first NMOS transistor so that a transient component of noise from the sense line is applied to both, a first PMOS transistor having a source coupled to the sense line, a second capacitor between a gate and source of the first PMOS transistor so the transient component of the noise is applied to both, a first current mirror having an input coupled to a drain of the first NMOS transistor and an output coupled to an output for that charge to current converter, and a second current mirror having an input coupled to a drain of the first PMOS transistor and an output coupled to the output for that charge to current converter.

Abstract: A method for making a micro-electro mechanical (MEMS) device includes forming a MEMS mirror stack on a handle layer, and applying a first bonding layer to the MEMS mirror stack. The method continues with disposing a substrate on the first bonding layer such that the MEMS mirror stack is mechanically anchored to the substrate and so as to seal against ingress of environmental contaminants, removing the handle layer, and applying a second bonding layer to the MEMS mirror stack. A cap layer is disposed on the second bonding layer such that the cap layer is mechanically anchored to the MEMS mirror stack and so as to seal against ingress of environmental contaminants.

Abstract: An EEPROM includes a floating gate transistor having a source region, a channel region and a drain region. A first capa implant zone on a drain-side of the floating gate transistor has a first dopant concentration level. A second capa implant zone in the first capa implant zone adjacent the drain region has a second dopant concentration level that is greater than the first dopant concentration level. A gate oxide region insulates the floating gate electrode from the channel region, first capa implant zone and second capa implant zone. A thickness of the gate oxide region is thinner at the second capa implant zone than at the channel region and first capa implant zone.

Abstract: An integrated circuit includes a circuit module storing sensitive data. An electrically conductive body at a floating potential is located in the integrated circuit and holds an initial amount of electric charge. In response to an attack attempting to access the sensitive data, electric charge is collected on the electrically conductive body. A protection circuit is configured to ground an output of the circuit module, and thus preclude access to the sensitive data, in response to collected amount of electric charge on the electrically conductive body differing from the initial amount and exceeding a threshold.

Abstract: An antenna includes two planar coils that are mechanically disposed face to face and electrically connected in series. The antenna is mounted to a disposable consumer product (for example, a cartridge for use with an electronic cigarette). The antenna is configured to support near field communications with a reader circuit for purposes of authenticating use of the disposable consumer product.

Abstract: An attack on an integrated circuit using a beam of electrically charged particles is detected by collecting charges due to the attack using at least one electrically conductive body that is electrically coupled to the floating gate of a state transistor. Prior to the attack, the state transistor is configured to confer an initial threshold voltage. The collected charges passed to the floating gate cause a modification of the threshold voltage of the state transistor. Detection of the attack is made by determining that the threshold voltage of the state transistor is different from the initial threshold voltage.

Abstract: An electronic chip includes an integrated optical-wave guide having an end section that extends parallel to a face of the electronic chip. A local groove provided in the electronic chip extends adjacent to the end section of the integrated optical-wave guide. An elongate optical cable includes an optical-wave guide and has an end portion that is at least partially engaged in the local groove. The end portion of the elongate optical cable is configured to support an optical coupling of the optical-wave guide to the integrated optical-wave guide via lateral coupling in a zone of the local groove. An exterior package is provided to house the electronic chip.

Abstract: Disclosed herein is a method of operating a non-volatile static random access NVSRAM memory formed from words. Each word includes NVSRAM cells, each of those NVSRAM cells having an SRAM cell and an electronically erasable programmable read only memory EEPROM cell. If the SRAM cells of a word have been accessed since powerup, data is read from the NVSRAM cells of that word through the SRAM cells. However, if the SRAM cells of that word have not been written since powerup, data is read from the NVSRAM cells of that word through the EEPROM cells.

Abstract: Disclosed herein is a method of performing a non-volatile write to a memory containing a plurality of volatile memory cells grouped into words, with each volatile memory cell having at least one non-volatile memory cell associated therewith. The method includes steps of a) receiving a non-volatile write instruction including at least one address and at least one data word to be written to that at least one address, b) writing the at least one data word to the volatile memory cells of a word at the at least one address, and c) writing data from the volatile memory cells written to during step b) to the non-volatile memory cells associated to those volatile memory cells by individually addressing those non-volatile memory cells for non-volatile writing, but not writing data from other volatile memory cells to their associated non-volatile memory cells because those non-volatile memory cells are not addressed.