Abstract: A sensor module includes an organic substrate, a MEMS pressure sensor mounted to the organic substrate, and a unitary lid mounted on the substrate. The unitary lid includes a central elevated portion housing the MEMS pressure sensor, an aperture in the central elevated portion, and a flat flange extending from the central elevated portion to an edge of the organic substrate.

Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes an output node at which a bandgap reference voltage is generated. A transconductance amplifier circuit in a current control feedback loop has a differential input which receives a base current. A compensation current sink circuit operates to sink a compensation current from the output node corresponding to the base current received at the differential input of the transconductance amplifier.

Abstract: A device includes a sensor and processing circuitry. The sensor, in operation, generates a sequence of data samples. The processing circuitry, in operation, implements a sliding convolutional neural network (SCNN) having a plurality of layers to generate classification results based on the sequence of data samples. The SCNN sequentially processes the sequence of data samples, the sequentially processing the sequence of data samples including, for each received sample of a set of received data samples of the sequence of data samples, iteratively updating partial results of an inference of a first layer of the plurality of layers based on a respective patch of data samples of the sequence of data samples. The respective patch of data samples includes the received data sample. The classification results may be used to generate control signals, such as by the sensing device or a host processor coupled to the sensing device.

Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

Abstract: A device includes one or more motion sensors and processing circuitry coupled to the one or more motion sensors. The one or more sensors, in operation, generate motion sensor signals. The processing circuitry, in operation, classifies a user-activity type based on the motion sensor signals, the user-activity type being selected from a plurality of user-activity types including one or more moving activity types, detects a tilt angle of the device based on the motion sensor signals, and classifies a use-condition of the device as used or not used based on the detected tilt angle. The processing circuitry generates a use-warning signal based on whether the classification of the user-activity type is a moving activity type and on whether the classification of the use-condition is used. The device may include an integrated circuit including the motion sensors and the processing circuitry, and the integrated circuit may be embedded in a display.

Abstract: Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.

Abstract: A circuit detects zero crosses in an input-signal and includes a low-pass-filter (LPF) receiving the input-signal and introducing a phase-shift dependent on the frequency thereof. Filter circuitry receives the output of the LPF, applies a fixed phase-shift thereto, and adjusts phase and DC-offset thereof based on control signals to produce a filtered output-signal. Control circuitry has a zero-crossing detector receiving the input-signal and the filtered output-signal, detecting zero-crossings of the input-signal and the filtered output-signal, asserting a digital zero cross signal at each zero crossing, and determining a phase-shift and DC-offset between the input-signal and filtered output-signal.

Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes output nodes generating first and second bandgap reference currents. A transconductance amplifier circuit in a current control feedback loop of the bandgap voltage generator circuit has differential inputs which receive base currents. A differential amplifier circuit has inputs configured to receive the first and second bandgap reference currents and includes a compensation current sink circuit configured to sink compensation currents from the first and second bandgap reference currents which correspond to the base current received at the differential inputs of the transconductance amplifier circuit.

Abstract: Disclosed herein a method for transforming a single processor system into an effective multicore system with few modifications to the existing processor. The transformation is achieved by wrapping the processor with a CPU Manager module, which intercepts all CPU transactions, remaps addresses, manages interrupt lines, and controls the CPU clock using clock gating. The transformation to n effective multicore system brings about reduced area and power impacts compared to a full duplication of the whole system, while still reusing the existing program in a multicore environment.

Abstract: The present description relates to an electronic circuit comprising a semiconductor substrate having opposed first and second faces and electrically conductive pillars, intended to be connected to an element external to the electronic circuit, extending through the semiconductor substrate from the second face to the first face and projecting from the first face.

Abstract: The present description concerns a correction circuit for a bandgap circuit comprising a first bipolar transistor and a second bipolar transistor, the bandgap circuit being configured to deliver a temperature-stable DC voltage based on the first and second bipolar transistors, the correction circuit being configured to generate a correction current equal to a difference in the base currents of said first and second transistors, and inject the correction current on the emitter of one of said first and second bipolar transistors to correct an error on the temperature-stable voltage resulting from a current gain difference between said first and second bipolar transistors.

Abstract: An electronic circuit includes a first die, having a GaN transistor, and a second die, stacked so that an element of the second die electrically connects a first node and a second nodes of the first die respectively coupled to a conduction node and to a control node of the GaN transistor.

Abstract: A device of contactless communication by active load modulation includes a receive circuit configured to receive as an input a reception signal originating from an electromagnetic field intended to be received by an antenna and to deliver as an output a first clock signal. A transmit circuit includes an output coupled to the antenna and operates to deliver on its output a modulation signal in phase with the reception signal. A compensation circuit is configured to compensate for a first delay of the first clock signal due to the receive circuit and to the amplitude of the reception signal. The compensation circuit operates to determine a phase-shift value to be applied to an input signal of the transmit circuit to compensate for the first delay.

Abstract: A non-volatile memory includes a first area with first storage elements configured to store values associated with first neurons of a network and a second area with second storage elements. A control circuit applies one or more first input values to first read paths, each first read path including one among the first storage elements. A computing circuit adds currents supplied by the first read paths to generate an output current. A programming circuit converts the output current into a programming current, and uses the programming current to program a second storage element.

Abstract: A device of contactless communication by active load modulation includes a receive circuit configured to receive as an input a reception signal originating from a magnetic field intended to be received by an antenna. A transmit circuit has an output coupled to the antenna with a modulation signal in phase with the reception signal intended to be delivered thereon. A circuit compensates for a delay of the modulation signal due to the transmit circuit and to the amplitude of the reception signal. The compensation circuit determines a phase-shift value to be applied to an input signal of the transmit circuit to compensate for the delay.

Abstract: Provided is a measuring device for measuring a distance between the measuring device and a user. The measuring device includes a distance sensor configured to generate a distance signal indicative of the distance, an IR radiation sensor configured to generate a temperature signal indicative of the IR radiation emitted by the user, and a control unit. The control unit is configured to: in a calibration mode, acquire the distance signal and the temperature signal respectively through the distance sensor and the IR radiation sensor and, on the basis of the distance signal and the temperature signal, generate a calibration curve which associates to each other values of the temperature signal with respective value of the distance; and in a calibrated mode, acquire the temperature signal through the IR radiation sensor and, on the basis of the temperature signal and the calibration curve, determine the distance.

Abstract: A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over (?)}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.

Abstract: A transistor device comprising a silicon-on-insulator (SOI) substrate having a plurality of polysilicon gates including a plurality of recessed gates and a plurality of non-recessed gates. The plurality of recessed gates being recessed in a top silicon layer of the SOI substrate and the plurality of non-recessed gates being on the top silicon layer. The plurality of recessed gates comprising an upper cap portion on a bottom buried portion that is in a recess of the SOI substrate. Methods of manufacturing the device are provided.

Abstract: An offset-cancellation circuit having a first amplification stage with a gain of the first amplification stage and configured to receive an offset voltage of a first amplifier. A storage element is configured to be coupled to and decoupled from the first amplification stage and configured to store a potential difference output by the first amplification stage. The potential difference is determined by the offset voltage of the first amplifier and the gain of the first amplification stage. A second amplification stage is coupled to the storage element and configured to receive the potential difference from the storage element when the storage element is decoupled from the first amplification stage and configured to deliver an offset-cancellation current. The offset-cancellation current is determined by the potential difference and a gain of the second amplification stage.

Abstract: In an embodiment the method a includes performing, by an integrated circuit (IC) card hosted in a local equipment, authentication with a contactless subscriber device when the subscriber device is within a communication range of a contactless interface of the local equipment, receiving, by the IC card, an identifier (SID) identifying a software module from the subscriber device, the software module configured to enable a subscription profile for a mobile network operator, performing a checking operation at the IC card whether the SID matches a software module identifier stored in the IC card and selectively performing one of downloading the software module to the IC card, enabling the software module at the IC card or disabling the software module at the IC card as a result of performing the checking operation.