Abstract: An output buffer circuit for improving an output during state transitions of CMOS buffers driving transmission line loads. The circuit generates variable output impedance proportional to the load transmission line impedance. The buffer includes an output stage, such as pull up/pull down drivers for receiving an input signal and generating an output signal. The pull up/pull down drivers are biased by a circuit that generates a control signal and varies its conductivity according to the control signal. The pull up/pull down drivers initially provide a relatively low impedance to reach a desired level during the initial transition period of the output and then slowly varies its impedance in response to the control signal to suppress the ringing effect. The control circuit coupled to the input node, output node and the power supply node to generate a control signal that biases the pull up/pull down driver.

Abstract: A system includes a storage subsystem having a data area and a header area. The data area is for storing contents of at least one data file, and the header area is for storing access parameters and status information for accessing each data file individually. The data area and the header area define a storage area in the storage subsystem. Multiple files are efficiently managed based on utilization of the storage area in the storage subsystem.

Abstract: A balanced differential amplifier sense amplifier senses the voltage level in a selected single bit line memory cell. The output of the selected single bit-line memory cell is connected to one input of the balanced differential sense amplifier while the other input receives a reference voltage provided by a corresponding single bit-line memory cell from a complementary memory bank. A supporting voltage is added-to/subtracted-from the reference voltage by providing a “bump” or “dip” mechanism or by utilizing a charge-sharing structure, in order to compensate for the variation in the sensed bit-line voltage over the duration of the sensing interval as well as for the disparity in voltage level from cell to cell.

Abstract: A sensing device for a data storage system may include a sensing circuit, a pull-down circuit, and a pull-up circuit. The sensing circuit may sense discharging of a desired bit line or a complementary bit line and may generate a desired output. The pull-down circuit may be coupled to the bit line and the complementary bit line for enhancing the discharging rate and may increase the sensing speed of the storage system. The pull-up circuit may control the discharging of an undesired bit line or complementary bit line.

Abstract: An apparatus for measuring time interval between two selected edges of a clock signal. includes an edge generator, a first multi-tap delay module, a second multi-tap delay module, and a multi-element phase detector. The edge generator produces a first edge at a first output node and a second selected edge at a second output node. First multi-tap delay module provides a first constant incremental delay at each tap to the first edge. Second multi-tap delay module provides a second constant incremental delay at each tap to the second selected edge. Each element of the multi-element phase detector has a first input terminal and a second input terminal. The first input terminal is coupled to a selected tap of the first multi-tap delay module and the second input terminal is coupled to a corresponding tap of the second multi-tap delay module. The output terminals of the multi-element phase detector provide the value of the time interval.

Abstract: The present invention discloses a high voltage switching module having reduced stress at its driver output stage which in turn controls the gate of a transistor requiring a high current drive. The switching module includes a negative elevating circuit, a delay module, a pull-up circuit, and a pull down circuit. The negative elevating circuit senses a transition of a logic input signal to generate a control signal. The first pull-up circuit is operatively coupled to this control signal for switching the driver output from a negative voltage to a ground voltage. There is an additional delay module which is configured to provide a delay in the logic input signal. This delayed logic input signal is operatively coupled to the second pull-up stage which takes the output of the driver from GND to VDD. The pull-down circuit is operatively coupled to the negative elevator for controlling a voltage at the driver output to the negative level.

Abstract: A system and a method to improve signal synchronization in a plurality of signal paths traversing multiple voltage domains. According to an embodiment of the present disclosure a memory arrangement is preferred for signal synchronization. All read/write and clocks signals and other control signals are driven to periphery supply (Vp) levels, except wordline (WL[i]) signals which are driven at core supply (Vc) level. By doing so, lower average and peak current consumption associated with core supply (Vc) is achieved with constant delays and maintaining required signal synchronization in the signal paths traversing multiple voltage domains.

Abstract: The present disclosure teaches a power management device for providing one or more voltages and prohibiting the operation until the IC is initialized and voltage stability is achieved. The power management device includes a power regulator block and a masking block. The power regulator block includes one or more of the following elements: -a regulator, a bandgap reference generator, a low voltage detector LVDD, a low voltage detector LVDM, and a plurality of logic gates. In one embodiment, the masking block includes one or more level shifters, a plurality of logic gates, a D flip-flop, and a power on reset circuit (PoR).

Abstract: A single-ended bit line based storage system. The storage system includes a first set of storage cells, a second set of storage cells, a first set of reference storage cells, a second set of reference storage cells, and a differential sensing block. The memory core is split vertically in half vertically to form the first set of storage cells and the second set of storage cells. The first set of reference storage cells provides a discharge rate lower than the discharge rate of said first set and second set of storage cells for storing data. The second set of reference storage cells provides a discharge rate lower than the discharge rate of said first set and second set of storage cells for storing data. The differential sensing block is coupled to the first set of storage cells and the second set of storage cells for generating an output data signal on receiving a control signal.

Abstract: A base cell for an Engineering Change Order (ECO) implementation having at least a first pair of CMOS transistors and a second pair of CMOS transistors, characterized in that said at least first pair of CMOS transistors have a common gate and said at least second pair of CMOS transistors have separate gates.

Abstract: A device and a method for a sense circuit have been disclosed. In an implementation, the sense circuit includes a sense amplifier and at least one decoupling device. The decoupling device is coupled to the sense amplifier through at least one reference line. The sense amplifier reads a data value and the decoupling device decouples the sense amplifier from a power supply during a read operation.

Abstract: An oscillator having a plurality of operatively coupled ring oscillators arranged in hyper-matrix architecture. The operatively coupled ring oscillators are either identical or non-identical and are coupled through a common inverter or tail current transistors.

Abstract: A system and a method for optimizing power in an electronic device are described. The system may be used to implement low power techniques to achieve maximum performance with low battery utilization. A processing load level monitor monitors load(s) on processors. Processor frequencies are updated through the driver until the load is close to 100%, which means that the core frequency is changed to the load processor around 100% at the minimum possible frequency.

Abstract: An embodiment of the present disclosure relates to system comprises an encoding device. Said encoding device comprises a compression unit, a quantizer, a bit estimator, a bit rate encoder and a variable length encoder. An embodiment also is a method of encoding. Said method estimates a number of bits to encode a macroblock after compressing the data stream. Then the estimated bit encoded by a bit rate encoder and further quantized by the quantizer to get the final encoded bit stream. The number of bits required to encode a macroblock is estimated after the quantization process and before the encoding process. The macroblock bit estimator estimates the number of bits required to encode a particular macroblock depending on the quantized AC coefficients of that macroblock and the quantized AC coefficients of the neighboring frames normalized at a macroblock level.

Abstract: A memory architecture includes a plurality of local input and output circuitries, with each local input and output circuitry associated with at least one memory bank. The memory architecture also includes a global input and output circuitry, which includes a plurality of global sub-write circuitries, is coupled to the plurality of local input and output circuitries One global sub-write circuitry is enabled and provides a write-data to a selected local input and output circuitry.

Abstract: The present invention discloses a high voltage switching module having reduced stress at its driver output stage which in turn controls the gate of a transistor requiring a high current drive. The switching module includes a negative elevating circuit, a delay module, a pull-up circuit, and a pull down circuit. The negative elevating circuit senses a transition of a logic input signal to generate a control signal. The first pull-up circuit is operatively coupled to this control signal for switching the driver output from a negative voltage to a ground voltage. There is an additional delay module which is configured to provide a delay in the logic input signal. This delayed logic input signal is operatively coupled to the second pull-up stage which takes the output of the driver from GND to VDD. The pull-down circuit is operatively coupled to the negative elevator for controlling a voltage at the driver output to the negative level.

Abstract: A filtering module filters out high frequency signals, primarily noise, from an input data stream. The filtering module includes an input module, a phase detecting module, and a threshold module. The input module performs either a charging or a discharging across a capacitor on a basis of an RC time constant. The phase detecting module is coupled to the input module to keep identical phase at a first node and an output node. The threshold module is coupled to the phase detecting module for providing an output signal based on a threshold voltage and the charging or the discharging across the capacitor.

Abstract: The present disclosure relates to a system comprising memory device with a power switch where the system comprises a first voltage controlled switch coupling positive power supply to positive supply terminal of memory device core; a second voltage controlled switch coupling negative power supply to negative supply terminal of the memory device core; a first reference voltage coupled to the substrate terminal of said first voltage controlled switch; and a second reference voltage coupled to the substrate terminal of said second voltage controlled switch. This helps maintain a sufficient RNM for efficient performance by the system.

Abstract: Embodiments of the present invention disclose operational amplifiers which demonstrate good settling behavior with minimum over-shoot or ringing for improving settling behavior. The amplifiers include one or more amplification stages connected to form a symmetric structure. The amplification stage includes a boosting amplifier, a MOS transistor and a compensation capacitor. The MOS transistor can be an NMOS transistor and a PMOS transistor. Using this scheme pole-zero doublets are rearranged in a manner to improve the transient settling response.

Abstract: The embodiments of the present invention provide a scalable method for implementing FFT/IFFT computations in multiprocessor architectures that provides improved throughput by eliminating the need for inter-processor communication after the computation of the first “log2P” stages for an implementation using “P” processing elements, comprising computing each butterfly of the first “log2P” stages on either a single processor or each of the “P” processors simultaneously and distributing the computation of the butterflies in all the subsequent stages among the “P” processors such that each chain of cascaded butterflies consisting of those butterflies that have inputs and outputs connected together, are processed by the same processor.