Abstract: System, method, and circuitry for generating content for a programmable computing device based on user-selected configuration information. The user-selected configuration information includes code generation strategy selections. A configuration store is generated based on the user's selections, and includes a code generation strategy parameters file. The configuration store and the user selected configuration information is utilized to generate the content, such as code, data, parameters, settings, etc. When the content is provided to the programmable computing device, the content initializes, configures, or controls one or more software and hardware aspects of the programmable computing device.

Abstract: A computer system is provided including a memory configured to store a computer program product, a processor configured to execute said computer program product, and a memory circuit. The computer program product includes at least one instruction to duplicate in the memory circuit a return address defined upon function call, and at least one instruction to compare a value of the return address stored in a call stack at the value of the return address duplicated in the memory circuit and to permit a function return branching only if these two values are identical.

Abstract: A semiconductor electronic device is formed in a die having a substrate of semiconductor material of a first conductivity type. The device has a first electronic component based on heterostructure, which has a body structure of semiconductor material that extending, in the die, on the substrate, and an epitaxial multilayer extending in contact with the body structure and having a heterostructure. The body structure of the first electronic component has a first doped region of semiconductor material that extends between the heterostructure and the substrate and has a second conductivity type different from the first conductivity type.

Abstract: A MOS transistor including a substrate, a conductive having lateral walls, drain and source regions, and spacers having an upper surface such that the spacers are buried in the substrate and are position between the conductive gate and the drain and source regions is provided. The spacers are each cuboid-shaped and have a width that is constant along the spacers height and independent from a height of the conductive gate. A device including the MOS transistor and a method of manufacture for producing a right-hand portion and a left-hand portion of a MOS transistor is also provided.

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

Abstract: Provided is a coupler including a first assembly of an input unit element, an intermediate unit element, and an output unit element. Each unit element includes a first coil and a second coil arranged in a cross having a general “H” shape. A first input terminal and a second input terminal of the intermediate unit element are coupled to a first output terminal and to a second output terminal of the input unit element, a first output terminal and a second output terminal of the intermediate unit element are coupled to a first input terminal and to a second input terminal of the output unit element, and the input unit element is spatially positioned between the intermediate unit element and the output unit element.

Abstract: A flash analog-to-digital converter (ADC) receives an input control signal and performs coarse tuning of a frequency of an output signal, produced between first and second nodes having an inductance coupled therebetween. The flash ADC quantizes an operating frequency range for the output signal produced between the first and second nodes as M·?f, where M is an integer from 0 to N?1, where N is a number of intervals into which a frequency range for the output signal is divided, and where ?f is a resulting frequency step produced by the quantizing. The value of M is generated based upon the input control signal and a word controlling switches of a plurality of switched capacitance circuits associated with the first and second nodes to close ones of those switches associated with the control word to coarsely tune the frequency of the output signal.

Abstract: A memory circuit includes an array of memory cells arranged with first word lines connected to a first sub-array storing less significant bits of data and second word lines connected to a second sub-array storing more significant bits of data. A first word line signal is applied to a selected one of the first word lines to read less significant bits from the first sub-array, and a mathematical operation is performed on the read less significant bits to produce modified less significant bits that are written back to the first sub-array. If the read less significant bits are saturated, a second word line signal is applied to a selected one of the second word lines to read more significant bits from the second sub-array, and a mathematical operation is performed on the read more significant bits to produce modified more significant bits that are written back to the second sub-array.

Abstract: A method for determining temperature of a chip, includes generating a first voltage and a second voltage using a pair of bipolar-junction transistors, and generating a third voltage using another bipolar-junction transistor. When a most recent bit of a bitstream is a logic-zero, the difference between the first and second voltages is sampled using a switched-capacitor input-sampling circuit, and a difference between the first and second voltages is integrated, to produce a proportional-to-absolute-temperature voltage. The proportional-to-absolute-temperature voltage is quantized to produce a next bit of the bitstream. When the most recent bit of the bitstream is a logic-one, the third voltage is sampled using the switched-capacitor input-sampling circuit, and the third voltage is integrated, to produce a complementary-to-absolute-temperature voltage. The complementary-to-absolute-temperature voltage is quantized to produce a next bit of the bitstream.

Abstract: A Low Voltage Differential Signaling (LVDS) transmitter includes driver circuit with a first transistor, a second transistor, a third transistor, a fourth transistor, a first resistor, and a second resistor. The first transistor is coupled between a first node and first output. The second transistor is coupled between the first node and a second output. The third transistor is coupled between the first output and a second node. The fourth transistor is coupled between the second output and the second node. The first resistor is coupled between the first output and a common mode node. The second resistor is coupled between the second output and the common mode node. A pre-driver circuit generates gate control signals controlling the first, second, third, and fourth transistors in response to a data signal. A controlled timing delay is applied to the timing of logic state transistors for the control signals.

Abstract: In accordance with an embodiment, a power supply circuit includes: a first transistor device comprising a first gate associated with a first transconductance and a second gate associated with a transconductance greater than the first transconductance; and a second transistor device including a third gate associated with a second transconductance and a fourth gate associated with a transconductance greater than the second transconductance. The second transistor device is configured to supply power to at least one load, the first and the third gates are controlled by a closed regulation loop, and the second and the fourth gates are controlled by a sampled reference voltage.

Abstract: An embodiment of the present disclosure relates to a method of detection of a touch contact by a sensor including a first step of comparison of a voltage with a first voltage threshold; and a second step of comparison of the voltage with a second voltage threshold, the second step being implemented if the first voltage threshold has been reached within a duration shorter than a first duration threshold, the second voltage threshold being higher than the first voltage threshold.

Abstract: A driving circuit for controlling a MEMS oscillator includes a digital conversion stage to acquire a differential sensing signal indicative of a displacement of a movable mass of the MEMS oscillator, and to convert the differential sensing signal of analog type into a digital differential signal of digital type. Processing circuitry is configured to generate a digital control signal of digital type as a function of the comparison between the digital differential signal and a differential reference signal indicative of a target amplitude of oscillation of the movable mass which causes the resonance of the MEMS oscillator. An analog conversion stage includes a ?? DAC and is configured to convert the digital control signal into a PDM control signal of analog type. A filtering stage of low-pass type, by filtering the PDM control signal, generates a control signal for controlling the amplitude of oscillation of the movable mass.

Abstract: Two sets of the DC voltages are determined from among sets of DC voltages. At a first temperature, a first voltage of one of the two sets and a first voltage of the other one of the two sets surround a detection voltage that varies substantially proportionally to temperature. The detection voltage is compared with a second voltage of one of the two sets.

Abstract: A semiconductor device, such as a Quad-Flat No-lead (QFN) package, includes a semiconductor chip arranged on a die pad of a leadframe. The leadframe has an array of electrically-conductive leads around the die pad. The leads in the array have distal ends facing away from the die pad as well as recessed portions at an upper surface of the leads. Resilient material, such as low elasticity modulus material, is present at the upper surface of the leads and filling the recessed portions. An insulating encapsulation is molded onto the semiconductor chip. The resilient material is sandwiched between the insulating encapsulation and the distal ends of the leads. This resilient material facilitates flexibility of the leads, making them suited for reliable soldering to an insulated metal substrate.

Abstract: A substrate made of doped single-crystal silicon has an upper surface. A doped single-crystal silicon layer is formed by epitaxy on top of and in contact with the upper surface of the substrate. Either before or after forming the doped single-crystal silicon layer, and before any other thermal treatment step at a temperature in the range from 600° C. to 900° C., a denuding thermal treatment is applied to the substrate for several hours. This denuding thermal treatment is at a temperature higher than or equal to 1,000° C.

Abstract: A system on a chip including a first-port controller for a first development port configured to receive a first development tool and a second-port controller for a second development port configured to receive a second development tool. The system on a chip further including a central controller in communication with the first-port controller, the second-port controller, and a security subsystem. The central controller being configured to manage authentication exchanges between the security subsystem and the first development tool and authentication exchanges between the security subsystem and the second development tool.

Abstract: A control circuit operates to control a switching stage of an electronic converter. The control circuit includes: first terminals providing drive signals to electronic switches of the switching stage; a second terminal receiving from a feedback circuit a first feedback signal proportional to a converter output voltage; and a third terminal configured to receive from a current sensor a second feedback signal proportional to an inductor current. A driver circuit provides the drive signals as a function of a PWM signal generated by a generator circuit as a function of the first and second feedback signals, a reference voltage and a slope compensation signal. A mode selection signal is generated as a function of a comparison between the input voltage and the output voltage. A feed-forward compensation circuit is configured to source and/or sink a compensation current as a function of a variation in the mode selection signal.

Abstract: An integrated circuit includes a first subsystem including a first clock generator configured to generate a first clock signal. The integrated circuit also includes a second subsystem including a second clock generator configured to generate a second clock signal. The first subsystem includes an edge detector configured to detect an edge of the second clock signal. The first clock generator generates the first clock signal with a selected phase relative to the second clock signal based on the edge of the second clock signal.

Abstract: An imaging device includes a sensor array with a number of pixels. In an embodiment, the imaging device can be operated by capturing a first low-spatial resolution frame using a subset of pixels of the sensor array and then capturing a second low-spatial resolution frame using the same subset of pixels of the sensor array. A first depth map is generated using raw pixel values of the first low-spatial resolution frame and a second depth map is generated using raw pixel values of the second low-spatial resolution frame. The first depth map can be compared to the second depth map to determine whether an object has moved in a field of view of the imaging device.