Abstract: A power conversion circuit includes a first node configured to receive a first voltage referenced to a second node configured to be coupled to a reference potential. A first power converter couples the first node to a third node. A second power converter couples a fourth node to an output node. A first capacitor couples the third node to the fourth node. A first switch connects the output node to the first node. An output switch connects the output node to a load.

Abstract: A Phase Change Memory (PCM) device includes sets of cells in which a binary logic level is written by a write operation. Each cell is included in a respective set of cells in the sets of cells. The write operation includes: performing write verify operations on the cells to identify an actual logic level stored in the cells; checking if the identified actual logic level matches a certain the binary logic level; in response to the checking determining that in at least one cell the actual logic level fails to match the binary logic level, correcting the actual logic level to match the binary logic level by performing: a set write operation in case the binary logic level is a high logic level, or a reset write operation in case the binary logic level is a low logic level.

Abstract: Micromachined ultrasonic transducer wherein a die including semiconductor material accommodates at least one ultrasonic cell. Each ultrasonic cell includes a piezoelectric structure, a cavity, and a membrane region, vertically aligned with each other. The cavity extends inside the die and downwardly delimits the membrane region. The piezoelectric structure is arranged on the membrane region and has at least one annular-shaped piezoelectric region. The micromachined ultrasonic transducer is configured to operate around the second axisymmetric vibration mode.

Abstract: A power stage includes parallel FETs including a reference FET. An input PWM signal has a switching period. A current sensor senses current flowing through the power stage during switch-on period. A first circuit generates a first PWM signal having a duty-cycle indicative of reference FET driving losses for a reference current. A second circuit generates a second PWM signal having a duty-cycle indicative of reference FET conduction losses for that reference current. The duty cycles of the first and second PWM signals are compared to generate a comparison signal. The reference current is changed until a logic state of the comparison signal changes. A respective enable signal for each FET is generated by comparing the reference current to the sensed current flowing through the power stage. A FET driver circuit generates a respective drive signal for each FET by combining the respective enable signal with the input PWM signal.

Abstract: In an embodiment, a voltage converter is configured to operate by a succession of operating cycles, each cycle comprising an energy accumulation phase and an energy restitution phase, wherein the converter is further configured to determine a duration of one of the phases by comparing a voltage ramp and a first reference voltage, and wherein a slope of the voltage ramp depends on a sign of a current in an inductor at an end of a previous operating cycle.

Abstract: A PMUT device includes a membrane element adapted to generate and receive ultrasonic waves by oscillating, about an equilibrium position, at a corresponding resonance frequency. A piezoelectric element is located over the membrane element along a first direction and configured to cause the membrane element to oscillate when electric signals are applied to the piezoelectric element, and generate electric signals in response to oscillations of the membrane element. A damper is configured to reduce free oscillations of the membrane element, and the damper includes a damper cavity surrounding the membrane element, and a polymeric member having at least a portion over the damper cavity along the first direction.

Abstract: Trenches of different depths in an integrated circuit are formed by a process utilizes a dry etch. A first stop layer is formed over first and second zones of the substrate. A second stop layer is formed over the first stop layer in only the second zone. A patterned mask defines the locations where the trenches are to be formed. The dry etch uses the mask to etch in the first zone, in a given time, through the first stop layer and then into the substrate down to a first depth to form a first trench. This etch also, at the same time, etch in the second zone through the second stop layer, and further through the first stop layer, and then into the substrate down to a second depth to form a second trench. The second depth is shallower than the first depth.

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

Abstract: According to one aspect, a system-on-a-chip is proposed which includes a memory storage, a computation circuit, a comparison circuit, and a validation circuit. The memory storage is configured to store an external software module. The computation circuit is configured to compute several modified software modules from the external software module and compute check values by iteration until obtaining a final check value. Each check value is computed at least from a given modified software module and a check value previously computed, starting with a predefined initial check value. The comparison circuit is configured to compare the final check value to an expected value stored in the system-on-a-chip. The validation circuit is configured to validate the external software module when the final check value is equal to the expected value.

Abstract: A semiconductor die is mounted on a substrate having electrically conductive substrate portions. The electrically conductive substrate portions include a die mounting location and electrically conductive leads around the die mounting location. The semiconductor die is mounted on a first surface of the die mounting location. The substrate and the semiconductor die are encapsulated in an electrically insulating encapsulation having a surface opposite the first surface. An electrically conductive path is provided to electrically couple the semiconductor die to one of the electrically conductive substrate portions.

Abstract: Disclosed herein is a DC-DC converter, including a high-side power switch coupled between an input voltage and a switched node and a low-side power switch coupled between the switched node and ground. An inductor is coupled between the switched node and an output node. An output capacitor is coupled between the output node and ground. A control circuit is configured to operate the high-side power switch in a constant charge mode of operation to vary on-time of the high-side power switch to maintain a constant amount of charge being transferred to the output capacitor during each charging cycle, independent of variation of the input voltage.

Abstract: An integrated circuit memory includes a state transistor having a floating gate which stores a respective data value. A device for protecting the data stored in the memory includes a capacitive structure having a first electrically-conducting body coupled to the floating gate of the state transistor, a dielectric body, and a second electrically-conducting body coupled to a ground terminal. The dielectric body is configured, if an aqueous solution is brought into contact with the dielectric body, to electrically couple the floating gate and the ground terminal so as to modify the charge on the floating gate and to lose the corresponding data. Otherwise, the dielectric body is configured to electrically isolate the floating gate and the ground terminal.

Abstract: A method configures a memory for use in executing an application. The configurating the memory includes defining a set of virtual memory resources associated with one or more contiguous memory areas of the memory. Contiguous virtual memory resources of the set of virtual memory resources are selectively merged based on respective security attributes of the virtual memory resources of the set of virtual memory resources, generating a merged set of virtual memory resources. A security attribute assigned to a virtual memory resource indicates the virtual memory resource is a secure memory resource, a non-secure memory resource, or a non-secure callable memory resource. Configuration information indicative of the merged set of virtual memory resources is stored for use in executing the application.

Abstract: Electrically insulating material is molded onto a sculptured, electrically conductive leadframe structure that includes a pattern of electrically conductive formations such as a die mounting location configured to have at least one semiconductor die arranged thereon, a dummy pad and a tie bar extending between the die mounting location and the dummy pad. A pre-molded leadframe structure results from the electrically insulating material penetrating into spaces between electrically conductive formations in the pattern of electrically conductive formations. At least one portion of the tie bar extending between the die mounting location and the dummy pad is removed to electrically decouple the dummy pad from the die mounting location.

Abstract: A triple-gate MOS transistor is manufactured in a semiconductor substrate including at least one active region laterally surrounded by electrically isolating regions. Trenches are etched on either side of an area of the active region configured to form a channel for the transistor. An electrically isolating layer is deposited on an internal surface of each of the trenches. Each of the trenches is then filled with a semiconductive or electrically conductive material up to an upper surface of the active region so as to form respective vertical gates on opposite sides of the channel. An electrically isolating layer is then deposited on the upper surface of the area of the active region at the channel of the transistor. At least one semiconductive or electrically conductive material then deposited on the electrically isolating layer formed at the upper surface of the active region to form a horizontal gate of the transistor.

Abstract: In embodiments, a reset management circuit executes reset, configuration, and software runtime phases when a processing system is switched on, where one or more microprocessors start at respective start addresses. During the configuration phase, a circuit reads a boot record from a non-volatile memory and stores it to registers. The circuit sequentially reads data records of configuration data from the non-volatile memory and generates a write request for each data record to store the data of the respective data record to a second circuit with associated address data indicated in the respective data record. The processing system processes the boot record and boot configuration data provided by the second circuits to selectively start a predetermined microprocessor at a default start address or at a start address indicated by the boot configuration data, or start one or more microprocessors at respective start addresses as indicated by the boot record.

Abstract: A method for monitoring the operation of a machine that generates vibrations, includes a learning phase in which a knowledge base containing vibrational signatures representative of the operation of the machine is generated, and a monitoring phase in which the vibrations of the machine are compared to the knowledge base so as to detect an anomaly in the machine.

Abstract: In an embodiment a method includes receiving, at an input of a low-voltage section of a gate driver, a PWM control signal with a switching frequency, providing, at an output of a high-voltage section of the gat driver, a gate-driving signal as a function of the PWM control signal to a power stage, wherein the high-voltage section is galvanically isolated from the low-voltage section, receiving, at a feedback input of the high-voltage section, at least one feedback signal indicative of an operation of the power stage, converting, at an ADC module of the high-voltage section, the feedback signal into a digital data stream, providing, to the ADC module, a conversion-trigger signal designed to determine a start of a conversion for acquiring a new sample of the feedback signal and sending, via an isolation communication channel between the low-voltage section and the high-voltage section, the digital data stream to the low-voltage section.

Abstract: Techniques to be described herein are based upon the combination of a digital lock-in amplifier approach with a numerical method to yield accurate estimations of the amplitude and phase of a sense signal obtained from a movement sensor associated with a resonant MEMS device such as a MEMS mirror. The techniques described herein are efficient from a computational point of view, in a manner which is suitable for applications in which the implementing hardware is to follow size and power consumption constraints.

Abstract: A near-field communication antenna includes a conductive plane; and four slots in the conductive plane.