Abstract: A well of a first conductivity type is insulated from a substrate of the same first conductivity type by a structure of a triple well type. The structure includes a trench having an electrically conductive central part enclosed in an insulating sheath. The trench supports a first electrode of a decoupling capacitor, with a second electrode provided by the well.

Abstract: Disclosed herein is a method of performing a non-volatile write to a memory containing a plurality of volatile memory cells grouped into words, with each volatile memory cell having at least one non-volatile memory cell associated therewith. The method includes steps of a) receiving a non-volatile write instruction including at least one address and at least one data word to be written to that at least one address, b) writing the at least one data word to the volatile memory cells of a word at the at least one address, and c) writing data from the volatile memory cells written to during step b) to the non-volatile memory cells associated to those volatile memory cells by individually addressing those non-volatile memory cells for non-volatile writing, but not writing data from other volatile memory cells to their associated non-volatile memory cells because those non-volatile memory cells are not addressed.

Abstract: An integrated circuit includes functional circuitry such as a processing core, memory interfaces, cryptographic circuitry, etc. The integrated circuit also includes protection circuitry to protect the functional circuitry of the integrated circuit against attacks by hidden channels. The protection circuitry, for each of a series of successive periods of time, selects a configuration of the functional circuitry from a set of configurations of the functional circuitry, sets a duration of the period of time, and applies the selected configuration of the functional circuitry for the set duration of the period of time.

Abstract: A method can be used for transmission of at least one packet of at least one bit over a serial link capable of taking two different states respectively associated with the two possible logical values of the at least one transmitted bit. Starting from a transmission start time of the at least one bit and up to the expiration of a first portion of a bit time associated with the at least one bit, the link is placed in one of its states depending on the logical value of the at least one bit. Upon the expiration of the first portion of this bit time, a first additional transition is generated over the link so as to place the link in its other state up to the expiration of the bit time.

Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.

Abstract: A processor interacts with a memory set including a cache memory, a first memory storing at least a first piece of information in a first information group, and a second memory storing at least a second piece of information in a second information group. In response to a first cache miss and following a first request from the processor for the first piece of information, the first piece of information obtained from the first memory is supplied to the processor. After a second request from the processor for the second piece of information, the second piece of information obtained from the second memory is supplied to the processor, even if the first information group is currently being transferred from the first memory for loading into the cache memory.

Abstract: A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion of an integrated circuit. This non-porous dielectric barrier protects the integrated circuit from breakdown of the least one dielectric region caused by electrical conduction assisted by the presence of defects located in the at least one dielectric region.

Abstract: An integrated circuit includes a voltage regulating circuit in the form of only one transistor, or a group of several transistors in parallel, that are connected between first and second terminals configured to be coupled to an antenna. A control circuit operates to make the voltage regulating circuit inactive when a pulse generated by an electrostatic discharge event appears at one of the first and second terminals, regardless of the direction of flow of the pulse between the first and second terminals. An electrostatic discharge circuit is further provided to address the electrostatic discharge event.

Abstract: A method for transmitting and/or receiving a potential aggressor audio signal includes a transmission and/or a reception of successive groups of data timed by a first clock signal within respective successive frames synchronized by a second clock signal. In the presence of a risk of interference of the potential aggressor audio signal with a different, potential victim, signal, during the transmission or reception of the potential aggressor audio signal, the frequency of the first clock signal is modified while keeping the frequency of the second clock signal unchanged.

Abstract: A MOS transistor located in and on a semiconductor substrate has a drain region, a source region and a conductive gate region. The conductive gate region includes a first conductive gate region that is insulated from the semiconductor substrate and a second conductive gate region that is insulated from and located above the first conductive gate region. A length of the first conductive gate region, measured in the drain-source direction, is greater than a length of the second conductive gate region, also measured in the drain-source direction. The first conductive gate region protrudes longitudinally in the drain-source direction beyond the second conductive gate region at least on one side of the second conductive gate region so as to extend over at least one of the source and drain regions.

Abstract: An error-correction code memory includes memory locations for storing data. The memory is programmed to store one or more intentionally invalid words. Testing of an error correction circuit for the memory is performed by accessing the one or more intentionally invalid words and performing an error detection and error correction operation.

Abstract: The disclosure concerns a method implemented by a processing device. The method includes performing a first execution by the processing device of a computing function based on one or more initial parameters stored in a first memory device. The execution of the computing function generates one or more modified values of at least one of the initial parameters, wherein during the first execution the one or more initial parameters are read from the first memory device and the one or more modified values are stored in a second memory device. The method also includes performing a second execution by the processing device of the computing function based on the one or more initial parameters stored in the first memory device.

Abstract: An integrated circuit includes a memory cell incorporating an antifuse device. The antifuse device includes a state transistor having a control gate and a second gate that is configured to be floating. A dielectric layer between the control gate and the second gate is selectively blown in order to confer a broken-down state on the antifuse device where the second gate is electrically coupled to the control gate for storing a first logic state. Otherwise, the antifuse device is in a non-broken-down state for storing a second logic state.

Abstract: An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunneling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

Abstract: The thinning of a semiconductor substrate of an integrated circuit from a back face is detected using the measurement of a physical quantity representative of the resistance between the ends of two electrically-conducting contacts situated at an interface between an insulating region and an underlying substrate region. The two electrically-conducting contacts extend through the insulating region to reach the underlying substrate region.

Abstract: A method of authenticating a slave device. The method includes initializing, by a host device, a charge retention circuit of the slave device, and receiving, by the host device, an indication of a discharge time of the charge retention circuit. The host device authenticates the slave device based on the received indication of the discharge time of the charge retention device.

Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

Abstract: A power supply voltage is monitored by a monitoring circuit including a band gap voltage generator core including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the band gap voltage generator core generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

Abstract: In an embodiment, an electronic device for filtering an incoming digital signal includes several elementary filtering modules that include an elementary input configured to receive an incident elementary signal extracted from an incoming signal, an elementary output, and a dedicated capacitive circuit. The device further includes a resistive circuit common to all the elementary filtering modules and configured for cooperating with the capacitive circuit of each elementary filtering module in such a manner as to filter, on the respective elementary output, pulses of the incident elementary signal having a first voltage level and a duration less than a time constant and to deliver a filtered elementary signal on the elementary output.

Abstract: A method can be used for managing a real-time detection related to a scene. A succession of steps of scene detection is spaced apart by time intervals. A time interval separating a current step of scene detection from a previous step of scene detection is adjusted according to an adjustment criterion linked to a previous scene actually detected. The succession of steps and the adjustment are performed by a wireless communication apparatus.