Abstract: A programmable digital-to-analog converter includes an analog circuit that converts a binary word into a value of analog voltage and a digital circuit that supplies the binary word starting from a maximum value decremented by a decrement value.
Abstract: An integrated processing unit is supplied by a power supply voltage present at the terminals of a capacitor configured to supply a maximum permissible voltage drop. A periodic pulse signal is generated having a period that is less than or equal to a current period determined from the maximum permissible voltage drop and a current consumption of the processing unit. The power supply voltage is compared with a threshold voltage at the pulse rate of the periodic pulse signal. A control signal generated from that comparison is delivered to the processing unit and has a first value when the power supply voltage is greater than or equal to the threshold voltage and a second value when the power supply voltage is less than the threshold voltage.
Abstract: A control signal is applied to a pulse generating circuit configured to generate pulses that are modulated in width. A circuit provides for slope-compensation of the control signal. The circuit includes a digital-to-analog converter that generates a decreasing sawtooth signal. A triggering circuit operates to trigger steps of the sawtooth signal and resetting the sawtooth signal. The sawtooth signal is reset at a cadence of a frequency of the pulses that are modulated in width.
Abstract: A method can be used for transmission of at least one packet of at least one bit over a serial link capable of taking two different states respectively associated with the two possible logical values of the at least one transmitted bit. Starting from a transmission start time of the at least one bit and up to the expiration of a first portion of a bit time associated with the at least one bit, the link is placed in one of its states depending on the logical value of the at least one bit. Upon the expiration of the first portion of this bit time, a first additional transition is generated over the link so as to place the link in its other state up to the expiration of the bit time.
Abstract: A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.
Abstract: Synchronization points are inserted into a program code to be monitored, and are associated with different branches resulting from execution of an indirect branch instruction. The synchronization points can be accessed by the monitored program code for the purpose of identifying which branch to use during execution of the indirect branch instruction of the monitored program code.
Abstract: A semiconductor substrate has a back face and a front face and includes a semiconductor well that is electrically isolated from the semiconductor substrate. A device is configured to detect a thinning of the semiconductor substrate from the back face. The device includes at least one trench that extends within the semiconductor well between two peripheral locations from the front face down to a location situated at a distance from a bottom of the semiconductor well. The trench is electrically isolated from the semiconductor well. A detection circuit is configured to measure a physical quantity representative of well electrical resistance between two contact areas respectively situated on either side of the at least one first trench.
Abstract: A logic two-to-one multiplexer includes: two input terminals; one output terminal; a control terminal. Four series-connected two-to-one multiplexers are connected such that a first multiplexer has its inputs connected to the input terminals, a last multiplexer has its output connected to the output terminal, and the other multiplexers have their respective inputs interconnected to the output of the previous multiplexer in the series association. Half of the multiplexers are controlled in reverse with respect to the other half of the multiplexers.
Abstract: A method can be used for detecting a potential presence of an object by a reader capable of mutually communicating via a contactless communications protocol. An antenna of the reader transmits a magnetic field on a carrier signal having a sub-carrier modulated by a first data sequence. The modulated sub-carrier is non-interpretable by the object. The antenna of the reader receives a signal resulting from the transmission. The reader demodulates the sub-carrier of the resulting signal so as to extract a second data sequence from the resulting signal. The first data sequence and second data sequence are correlated and the potential presence or absence of the object is determined based upon the result of the correlating.
Abstract: An integrated random signal generation circuit includes two logic gates, the output of each gate coupled to a respective first input of the other gate via assemblies of delay elements. The respective delays introduced by the assemblies of delay elements are adjustable.
Abstract: An electronic device can be used for synchronizing tasks of an appliance that includes a memory access controller having inputs associated with priority levels. The device includes control circuits configured for receiving signals from events and delivering in response signals for activation of tasks. A configurable interface for external events designed to receive first event signals from at least one circuit of the appliance and to route some of them to the corresponding control circuits as a function of a first law of correspondence. A configurable interface for internal events designed to receive second event signals corresponding to the signals for activation of tasks and to route some of them to the control circuits as a function of a second law of correspondence.
Type:
Grant
Filed:
October 30, 2015
Date of Patent:
October 2, 2018
Assignees:
STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS
Inventors:
Eric Bernasconi, David Coupe, Ludovic Chotard, Pierre-François Pugibet
Abstract: A non-volatile memory is erasable by page and equipped with a row redundancy mechanism. In the case of the detection of a defective row of the memory plane, the storing of the address of the row in a non-volatile register is carried out and a redundant row having a new address is assigned. In the case of an attempt to write to the defective row, a write to the redundant row is carried out. When writing to the redundant row, the new content of the redundant row is loaded into a volatile memory and, following an operation for writing to any other row of the memory plane, a re-loading of the new content of the redundant row into the volatile memory.
Abstract: A delaying element includes a first XOR logic gate and a second XOR logic gate. A first input of the first XOR logic gate defines an input terminal. A first input of the second XOR logic gate is connected to an output of the first XOR logic gate. An output of the second XOR logic gate defines an output terminal. The second inputs of the first and second XOR logic gates are connected to a second input terminal.
Abstract: An electronic chip including: a plurality of first semiconductor bars of a first conductivity type and of second semiconductor bars of a second conductivity type arranged alternately and contiguously on a region of the first conductivity type; two detection contacts arranged at the ends of each second bar; a circuit for detecting the resistance between the detection contacts of each second bar; insulating trenches extending in the second bars down to a first depth between circuit elements; and insulating walls extending across the entire width of each second bar down to a second depth greater than the first depth.
Type:
Grant
Filed:
October 20, 2017
Date of Patent:
September 18, 2018
Assignee:
STMICROELECTRONICS (ROUSSET) SAS
Inventors:
Alexandre Sarafianos, Mathieu Lisart, Jimmy Fort
Abstract: A non-volatile memory cell includes a selection transistor having an insulated selection gate embedded in a semiconducting substrate region. A semiconducting source region contacts a lower part of the insulated selection gate. A state transistor includes a floating gate having an insulated part embedded in the substrate region above an upper part of the insulated selection gate, a semiconducting drain region, and a control gate insulated from the floating gate and located partially above the floating gate. The source region, the drain region, the substrate region, and the control gate are individually polarizable.
Abstract: A circuit generates a number of oscillations. The circuit includes a first branch with at least one delay line introducing symmetrical delays on rising edges and on falling edges and at least one asymmetrical delay element introducing different delays on rising edges and on falling edges. The circuit further includes a second branch looped back on the first branch and including at least one delay line introducing symmetrical delays on rising edges and on falling edges.
Type:
Grant
Filed:
November 28, 2016
Date of Patent:
September 11, 2018
Assignee:
STMicroelectronics (Rousset) SAS
Inventors:
Albert Martinez, Michel Agoyan, Jean Nicolai
Abstract: A fuse device is formed by a PN junction semiconducting region that is electrically insulated from other portions of an integrated circuit. The fuse device includes a first semiconducting zone having P type of conductivity and a second semiconducting zone having N type of conductivity in contact at a PN junction. First and second electrically conducting contact zones are provided on the first and second semiconducting zone, respectively, without making contact with the PN junction. One of the first and second semiconducting zones is configured with a non-homogeneous concentration of dopants, where a region with a lower value of concentration of dopant is located at the PN junction and a region with a higher value of concentration of dopant is locates at the corresponding electrically conducting contact zone.
Abstract: A method of controlling a cycle for writing at least one data item to at least one memory slot of the electrically programmable and erasable read-only memory type disposed in an electronic circuit supplied by a supply voltage includes a controlled increase of the duration of the write cycle in the presence of a decrease in the supply voltage.
Abstract: A semiconductor substrate has a back face and a front face and includes a semiconductor well that is electrically isolated from the semiconductor substrate. A device is configured to detect a thinning of the semiconductor substrate from the back face. The device includes at least one trench that extends within the semiconductor well between two peripheral locations from the front face down to a location situated at a distance from a bottom of the semiconductor well. The trench is electrically isolated from the semiconductor well. A detection circuit is configured to measure a physical quantity representative of well electrical resistance between two contact areas respectively situated on either side of the at least one first trench.
Abstract: An integrated circuit includes a semiconductor substrate with an electrically isolated semiconductor well. An upper trench isolation extends from a front face of the semiconductor well to a depth located a distance from the bottom of the well. Two additional isolating zones are electrically insulated from the semiconductor well and extending inside the semiconductor well in a first direction and vertically from the front face to the bottom of the semiconductor well. At least one hemmed resistive region is bounded by the two additional isolating zones, the upper trench isolation and the bottom of the semiconductor well. Electrical contacts are electrically coupled to the hemmed resistive region.
Type:
Application
Filed:
October 3, 2017
Publication date:
August 30, 2018
Applicants:
STMicroelectronics (Crolles 2) SAS, STMicroelectronics (Rousset) SAS
Inventors:
Benoît Froment, Stephan Niel, Arnaud Regnier, Abderrezak Marzaki