Abstract: MEMS gyroscope, having a first movable mass configured to move with respect to a fixed structure along a first drive direction and along a first sense direction, transverse to the first drive direction; a first drive assembly, coupled to the first movable mass and configured to generate a first alternate drive movement; a first drive elastic structure, coupled to the first movable mass and to the first drive assembly, rigid in the first drive direction and compliant in the first sense direction; a second movable mass, configured to move with respect to the fixed structure in a second drive direction parallel to the first drive direction and in a second sense direction parallel to the first sense direction; a second drive assembly, coupled to the second movable mass and configured to generate a second alternate drive movement in the second drive direction; and a second drive elastic structure, coupled to the second movable mass and to the second drive assembly, rigid in the second drive direction and compliant

Abstract: Disclosed herein is a method for manufacturing a semiconductor product package. The method includes arranging a leadframe with one or more leads such that each lead has an inner end facing a portion of a die-pad, attaching a semiconductor chip to the die-pad, attaching a first electrically conductive mass to the die-pad such that it is aligned with the inner end of a lead protruding over the die-pad, attaching an electrical component to the first electrically conductive mass such that a longitudinal axis of the electrical component is arranged traverse to the die-pad, and coupling a second electrically conductive mass between a termination of the electrical component and the inner end of the lead.

Abstract: A switching regulator circuit has a switching transistor actuated during a switching on phase of a duty cycle. The current flowing through an inductor of the switching regulator circuit is determined from sensing a transistor current flowing through the switching transistor during switching on phase and selectively charging a capacitor of a switched capacitor circuit dependent on a current sense signal during the switching on phase.

Abstract: A DC-DC boost converter includes an input receiving an input voltage and an output producing an output voltage. A switching stage is formed by a low-side transistor arranged between a switching node and a ground node, and a high-side transistor arranged between the switching node and the output. The high-side transistor includes a body diode having an anode coupled to the switching node and a cathode coupled to the output. The converter is controlled in an asynchronous operation mode where the low-side transistor is driven alternately to a conductive state and a non-conductive state, and the high-side transistor is driven steadily to a non-conductive state. A variable load circuit is selectively coupled between the two output terminals when the converter is in the asynchronous operation mode in order to sink a load current having a value that is a function of a value of the input voltage.

Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.

Abstract: A first RF-to-DC circuit receives a radiofrequency signal and produces a first converted signal delivered to an energy storage circuit. A second RF-to-DC circuit, which is a down-scaled replica of the first RF-to-DC circuit, produces a second converted signal from the radiofrequency signal that is indicative of an open-circuit voltage of the first RF-to-DC circuit. The first RF-to-DC section includes N sub-stages, with a sub-set of sub-stages being selectively activatable. A window comparison of the second converted signal generates a first signal and a second signal indicative of whether the second converted signal is within a range of values proportional to a voltage reference signal. The sub-set of sub-stages is selectively deactivated, respectively activated, when the performed window comparison has a first result, respectively, a second result.

Abstract: The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and/or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

Abstract: A radio-frequency receiver includes built-in-self-test (BIST) circuitry which generates a self-test signal. A local oscillator signal is divided. A self-test oscillation signal is generated, based, at least in part, on the frequency-divided local oscillation signal. The self-test signal is generated based on the self-test oscillation signal. The BIST circuitry includes a divider, which divides the self-test oscillation signal. The frequency-divided local oscillation signal and the divided self-test oscillation signal are used to perform one or more of generating the self-test oscillation signal and controlling the generation of the self-test oscillation signal. The radio-frequency receiver may be an automotive radar receiver.

Abstract: A system for detecting a presence in an environment to be monitored includes an electrostatic charge variation sensor, a vibration sensor, and an environmental pressure sensor. A processing unit is configured to acquire, from the electrostatic charge variation sensor, an electrostatic charge variation signal, and detect in the electrostatic charge variation signal, first signal characteristics indicative of the presence of a subject in the environment to be monitored. The processing unit further validates the detection of presence of the subject using the vibration and pressure signals provided by the other sensors.

Abstract: A voltage supply circuit and a method for controlling a voltage supply circuit are provided. The voltage supply circuit includes a positive charge pump stage that generates a positive voltage and a negative charge pump stage that generates a negative voltage. The voltage supply circuit also includes a control stage that compares a voltage representative of the negative voltage with a reference voltage and causes a slope of the positive voltage to decrease when the voltage representative of the negative voltage exceeds the reference voltage.

Abstract: An audio device includes a gain step selection circuit that receives a different requested gain value and an associated requested step size from each of a plurality of sources, compares each requested gain value to a same feedback gain value and generates a polarity based thereupon, performs step polarization on each requested step size as a function of the generated polarity therefor to thereby generate a plurality of step values, and outputs a least of the plurality of step values as an output step value. An accumulator circuit generates a current input gain value based upon the output step value and the feedback gain value, and then updates the feedback gain value to be equal to the current input gain value. A normalizing circuit multiplies an input data value by the current input gain value and applies a truncation function to a result thereof to produce an output data value.

Abstract: A signal processing circuit includes a filter generating a quantizer input signal from a noise shaping input signal and a quantizer output signal. A quantizer divides the quantizer input signal by a scaling factor to produce a noise shaping output signal and multiplies the noise shaping output signal by the scaling factor to produce the quantizer output signal. Receiver circuitry scales the quantizer output signal by a second scaling factor. A dynamic range optimization circuit compares a current value of the noise shaping input signal to a threshold value, lowers or raises the scaling factor in response to the comparison, and proportionally lowers or raises the scaling factor such that a ratio between the scaling factor and second scaling factor remains substantially constant.

Abstract: A power module includes a support, a first control contact area on the support, a second control contact area on the support, a first electronic power device, a second electronic power device, a first clip, a second clip, a third clip, and a package embedding the support, the first and the second electronic power devices as well as partially the first, the second and the third clips. The first electronic power device has a first conduction pad electrically coupled to the first clip, a second conduction pad electrically coupled to the third clip, and a control pad coupled to the first control contact area. The second electronic power device has a first conduction pad electrically coupled to the third clip, a second conduction pad electrically coupled to the second clip, and a control pad coupled to the second control contact area.

Abstract: A power MOSFET device includes an active area accommodating a first body region and a second body region having a first and, respectively, a second conductivity value. The second value is higher than the first value. A first channel region is disposed in the first body region between a first source region and a drain region, and the first channel region has and having a first channel length. A second channel region is disposed in the second body region between a second source region and the drain region, and the second channel region has and having a second channel length smaller than the first channel length. A first device portion, having a first threshold voltage, includes the first channel region, and a second device portion, having a second threshold voltage higher than the first threshold voltage, includes the second channel region.

Abstract: A convolutional accelerator includes a feature line buffer, a kernel buffer, a multiply-accumulate cluster, and mode control circuitry. In a first mode of operation, the mode control circuitry stores feature data in a feature line buffer and stores kernel data in a kernel buffer. The data stored in the buffers is transferred to the MAC cluster of the convolutional accelerator for processing. In a second mode of operation the mode control circuitry stores feature data in the kernel buffer and stores kernel data in the feature line buffer. The data stored in the buffers is transferred to the MAC cluster of the convolutional accelerator for processing. The second mode of operation may be employed to efficiently process 1×N kernels, where N is an integer greater than or equal to 1.

Abstract: Provided is a control device is for a switching voltage regulator having a switching circuit. The control device receives input and output voltages of the switching circuit and a measurement signal indicative of a current of the switching circuit. The control device has: a feedback module that detects an error signal indicative of a difference between the output voltage and a nominal voltage, and provides a control signal as a function of the error signal; a threshold-correction module that provides offset and ramp signals; and a driving-signal generation module coupled to the feedback and threshold-correction modules, which receives the measurement signal, compares the measurement signal with a threshold and, in response, provides a modulated signal for driving the switching circuit. The threshold is a function of the control, offset and ramp signals. The threshold-correction module provides the offset signal as a function of the input or output voltages.

Abstract: A method of driving an electrical load includes coupling a power supply source to a power supply pin of a driver circuit, and coupling an electrical load to at least one output pin of the driver circuit. A driver sub-circuit of the driver circuit produces at least one driving signal for driving the electrical load. The at least one driving signal is provided to the electrical load via the at least one output pin. The at least one driving signal is modulated to supply the electrical load with a load current and to subsequently interrupt the load current. A compensation current pulse is sunk from the power supply pin, at a compensation circuit of the driver circuit, in response to the load current being interrupted.

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

Abstract: The present disclosure is directed to micro-electromechanical system (MEMS) accelerometers that are configured for a user interface mode and a true wireless stereo (TWS) mode of an audio device. The accelerometers are fabricated with specific electromechanical parameters, such as mass, stiffness, active capacitance, and bonding pressure. As a result of the specific electromechanical parameters, the accelerometers have a resonance frequency, quality factor, sensitivity, and Brownian noise density that are suitable for both the user interface mode and the TWS mode.