Abstract: An integrated circuit includes a semiconductor substrate, electronic components integrated in the semiconductor substrate, an electric connection structure overlying the semiconductor substrate, and an conductive region, with elongated shaped, having a first and a second end. The conductive region is formed in the electric connection structure, extends over an entire length of the substrate and is not directly electrically connected to the electronic components. A first and a second synchronization connection element are electrically coupled to the first end and to the second end, respectively, of the conductive region and have each a respective synchronization connection portion facing the coupling face.

Abstract: An integrated circuit includes a sub-system and a reference sub-system. The reference sub-system is substantially identical to the sub-system but is non-operating by default. The integrated circuit includes a test circuit that obtains a parameter value of the sub-system and a reference parameter from the reference sub-system. The integrated circuit detects deterioration of the sub-system based on the parameter value and the reference parameter. The integrated circuit deactivates the sub-system and activates the reference sub-system responsive to detecting deterioration of the sub-system.

Abstract: An input signal has a desired signal component and an interfering signal component superimposed thereon. Interfering component estimation processing is applied to the input signal, obtaining as a result a filtered signal comprising a sequence of filtered data samples. The filtered signal is subtracted from the input signal obtaining as a result an output signal comprising a sequence of output data samples. The interfering component estimation processing applies conjugating processing to the input signal, providing a conjugated version of the input signal. An adaptive signal processing coefficient is computed and adaptive signal processing is applied to the conjugated version of the input signal using the adaptive processing coefficient.

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

Abstract: A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.

Abstract: In an embodiment, an electronic circuit includes: an input differential pair including first and second transistors; a first pair of transistors in emitter-follower configuration including third and fourth transistors, and an output differential pair including fifth and sixth transistors. The third transistor has a control terminal coupled to the first transistor, and a current path coupled to a first output terminal. The fourth transistor has a control terminal coupled to the second transistor, and a current path coupled to a second output terminal. The fifth transistor has a control terminal coupled to the first transistor, and a first current path terminal coupled to the first output terminal. The sixth transistor has a control terminal coupled to the second transistor, and a first current path terminal coupled to the second output terminal. First and second termination resistors are coupled between the first pair of transistors and the output differential pair.

Abstract: First combinational, arithmetic, or combinational and arithmetic, operations are applied to data and an expected value, generating result bit sequences. When the value of the data corresponds to the expected value, the result bit sequences are different from each other and correspond to expected values of the result bit sequences. Second operations are applied a first memory address, a second memory address, and the result bit sequences, generating a memory address. When values of the generated result bit sequences correspond to the expected values of the result bit sequences, the generated memory address corresponds to the first memory address. When values of the generated plurality of result bit sequences do not correspond to the expected values of the result bit sequences, the generated memory address corresponds to the second memory address. A software routine starting at the generated memory address is executed.

Abstract: A semiconductor device comprises at least one semiconductor die electrically coupled to a set of electrically conductive leads, and package molding material molded over the at least one semiconductor die and the electrically conductive leads. At least a portion of the electrically conductive leads is exposed at a rear surface of the package molding material to provide electrically conductive pads. The electrically conductive pads comprise enlarged end portions extending at least partially over the package molding material and configured for coupling to a printed circuit board.

Abstract: A switching circuit includes first and second half bridges supplying an electrical load via filter networks. During alternate switching sequences a first transistor pair (high-side in one half bridge and low-side in the other half bridge) is switched to a non-conductive state, and a second transistor pair (high-side in the other half bridge and low-side in the one half bridge) is switched to a conductive state. A current flow line is provided by an inductance, a first switch and a second switch between outputs of the half bridges. In a medium-high power mode, the first and second switches are in the conductive state between switching the first pair of transistors to the non-conductive state and the second pair of transistors to the conductive state. In a low or quiescent power mode, switching the first and second switches to the conductive state is refrained due to application of a longer delay.

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: A microelectromechanical device has a first tiltable mirror structure extending in a horizontal plane defined by first and second horizontal axes and includes a fixed structure defining a frame delimiting a cavity, a tiltable element carrying a reflecting region, elastically suspended above the cavity having first and second median axes of symmetry, elastically coupled to the frame by first and second coupling structures on opposite sides of the second horizontal axis. The first tiltable mirror structure has a driving structure coupled to the tiltable element to cause rotation around the first horizontal axis. The first tiltable mirror structure is asymmetrical with respect to the second horizontal axis and has, along the first horizontal axis, a first extension on a first side of the second horizontal axis, and a second extension greater than the first extension, on a second side of the second horizontal axis opposite to the first side.

Abstract: An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, with each light emitting pixel including at least one subpixel formed by one or more light emitting diodes positioned on a substrate. At least one photodetector is positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.

Abstract: A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state.

Abstract: In a digital communication system, a master device and a number of slave devices are coupled in communication with the master device over a shared data communication bus. During an address assignment procedure, the master device assigns different respective dynamic addresses to the slave devices in order to address the slave devices for data communication; during the address assignment procedure, the slave devices are arranged in a daisy-chain configuration, wherein each slave device has a daisy-chain input and a daisy-chain output, the daisy-chain input of a slave device being coupled to the daisy-chain output of a previous slave device in the daisy chain configuration, the daisy-chain input of a first slave device being coupled to a daisy-chain enabling output of the master device; in particular, the master device is configured to assign the respective dynamic addresses to the slave devices based on their arrangement in the daisy-chain configuration.

Abstract: Described herein is a method including measuring a current in a wire, normalizing the measured current, and comparing the normalized measured current to a control curve. The control curve is a function of a series of normalized current magnitudes and reaction times for corresponding ones of that series of normalized current magnitudes. The method further includes limiting the current in the wire based upon the comparison. The reaction times for ones of the series of normalized current magnitudes are times at which current limitation would occur if the normalized current remained at an associated normalized current magnitude.

Abstract: An embodiment apparatus comprises a switching-type output power stage, a modulator circuit configured for carrying out a pulse-width modulation and converting an electrical input signal into an input signal pulsed between two electrical levels, having a mean value proportional to the amplitude of the input signal, and a circuit arrangement for controlling saturation of an output signal supplied by the switching-type output power stage. The circuit arrangement comprises a pulse-remodulator circuit, between the output of the modulator circuit and the input of the switching-type output power stage, that is configured for supplying, as a driving signal to the switching-type output power stage, a respective modulated signal pulsed between two electrical levels, measuring a pulse width as pulse time interval elapsing between two consecutive pulsed-signal edges of the pulsed input signal, and, if the measurement indicates that the latter is below a given minimum value, remodulating the pulsed input signal.

Abstract: A method of processing an electrical signal transduced from a voice signal is disclosed. A classification model is applied to the electrical signal to produce a classification indicator. The classification model has been trained using an augmented training dataset. The electrical signal is classified as either one of a first class and a second class in a binary classification. The classifying being performed is a function of the classification indicator. A trigger signal is provided to a user circuit as a result of the electrical signal being classified in the first class of the binary classification.

Abstract: A method for presence detection in an environment to be monitored, includes generating an electric charge signal in a condition of absence of presence in the environment to be monitored. An electric charge signal is generated in an operating condition in which a person may be present in the environment. The two generated signals are processed and the results of the processing are compared. Processing the signals includes representing in a biaxial reference system the value of the charge signal considered and its derivative with respect to time, and identifying a plurality of points in the reference system. By comparing the position of the points acquired during the possible human presence with those of the base shape, a variation indicating the actual human presence may be detected. In this case an alarm signal is generated.

Abstract: A System in Package, SiP semiconductor device includes a substrate of laser direct structuring, LDS, material. First and second semiconductor die are arranged at a first and a second leadframe structure at opposite surfaces of the substrate of LDS material. Package LDS material is molded onto the second surface of the substrate of LDS material. The first semiconductor die and the package LDS material lie on opposite sides of the substrate of LDS material. A set of electrical contact formations are at a surface of the package molding material opposite the substrate of LDS material. The leadframe structures include laser beam processed LDS material. The substrate of LDS material and the package LDS material include laser beam processed LDS material forming at least one electrically-conductive via providing at least a portion of an electrically-conductive line between the first semiconductor die and an electrical contact formation at the surface of the package molding material opposite the substrate.

Abstract: An irrigation system includes a first valve fluidly-coupled between an inlet pipe and an outlet pipe, and a second valve fluidly-coupled between the inlet pipe and a power harvester. The power harvester generates electrical power at a power output in response to fluid flowing therethrough. An energy storage unit is coupled to the power output to store generated voltage. Comparison circuitry compares the generated voltage to a threshold. Control circuitry causes the second valve to permit fluid to flow therethrough when the generated voltage is less than the threshold, causing generation of the electrical power by the power harvester when the generated voltage is less than the threshold. The comparison circuitry causes the second valve to prevent fluid flow when the generated voltage is at least equal to threshold, ceasing generation of the electrical power by the power harvester when the generated voltage is at least equal to the threshold.