Abstract: A circuit board (100) having an insulator layer and a conductor (104) buried in the insulator layer, wherein the insulator layer has a first insulator (101) satisfying a relation ?r??r, assuming ?r is the dielectric constant and ?r is the relative permeability, and the conductor is substantially surrounded by the first insulator.

Abstract: Disclosed is a method of controlling the flow rate of clustering fluid using a pressure type flow rate control device in which the flow rate Q of gas passing through an orifice is computed as K=KP1 (where K is a constant) with the gas being in a state where the ratio P2/P1 between the gas pressure P1 on the upstream side of the orifice and the gas pressure P2 on the downstream side of the orifice is held at a value not higher than the critical pressure ratio of the gas wherein the association of molecules is dissociated either by heating the pressure type flow rate control device to the temperature higher than 40° C., or by applying the diluting gas to the clustering fluid to make it lower than a partial pressure so the clustering fluid is permitted to pass through the orifice in a monomolecular state.

Abstract: A reactor for generating moisture wherein ignition of hydrogen gas, backfire to the gas supply source side, the peeling off of the platinum coat catalyst layer inside are prevented more completely to further increase the safety of the reactor for generating moisture and wherein the dead space in the interior space is reduced to further reduce the size of the reactor shell.

Abstract: A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

Abstract: A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

Abstract: A fluid passage is emergently-closed in a short time without causing a water hammer by an extremely simple device and operation. A water hammerless closing device includes an actuator operated valve provided in a fluid passage, an electro-pneumatic conversion device for supplying a 2-step actuator operating pressure Pa to an actuator operated-type valve, a vibration sensor removably secured to the pipe passage on the upstream side of the actuator operated-type valve, and a tuning box receiving a vibration detection signal Pr from the vibration sensor and delivering a control signal Sc to the electro-pneumatic conversion device for controlling the step operating pressure Ps? of the 2-step actuator operating pressure Pa so that, with the control signal Sc being regulated, the electro-pneumatic conversion device outputs the 2-step actuator operating pressure Pa with the step operating pressure Ps? capable of bringing the vibration detection signal Pr substantially to zero.

Abstract: Two coupling member 1, 2 are provided in respective butting end faces thereof with annular recessed portions 3, 4 surrounding respective fluid channels 1a, 2a thereof and having annular projections 5, 6 each formed in a bottom face of the recessed portion. A gasket 10 comprises a sealing portion 11 having an outside diameter smaller than the diameter of the recessed portions 3, 4 and positioned between the projections 5, 6 of the coupling members 1, 2, and a guide 12 having an outside diameter permitting the guide to be fitted into the recessed portions 3, 4 and positioned externally of the sealing portion 11. The butting end faces of the coupling members 1, 2 are movable into contact with each other when the coupling is tightened up properly. The sealing portion 11 has an annular groove 14 formed in an outer periphery thereof, and the sealing portion 11 and the guide 12 are connected together by a snap ring 13 fitted in the annular groove 14.

Abstract: According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.

Abstract: A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

Abstract: The present invention provides a vacuum apparatus that includes a plurality of vacuum containers each having a gas inlet and an exhaust outlet, a gas supply system for introducing a desired gas into each of the vacuum containers through the gas inlet, and an exhaust system for keeping each of the vacuum containers at a low pressure. In this vacuum apparatus, the exhaust system includes a plurality of multistage vacuum pumps connected in series. The exhaust outlet pressure of the last-stage vacuum pump is substantially at atmospheric pressure. The last-stage vacuum pump is designed to exhaust gas from a plurality of vacuum pumps at previous stages.

Abstract: A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

Abstract: A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

Abstract: A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.

Abstract: A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

Abstract: A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and agate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.

Abstract: An on-off device disposed at each of the inlet and the outlet of a fluid controller is one of five kinds of on-off devices, i.e., on-off device having a two-port valve, on-off device having a two-port valve and a three-port valve, on-off device having a two-port valve and two three-port valves, on-off device having two three-port valves, and on-off device having three three-port valves, The main bodies of two-port valves of all types of on-off devices are identical in configuration and each have an inlet and an outlet in a bottom face thereof. Main bodies of three-port valves of all types of on-off devices are identical in configuration and each formed in a bottom face thereof with an inlet, an outlet always in communication with the inlet, and an inlet-outlet subopening.

Abstract: A method for forming an oxidation-passive layer having high corrosion resistance to highly oxidizing materials such as ozone; a stainless steel and a titanium base alloy having corrosion resistance to an ozone containing fluid; and a fluid containing part, a process apparatus, and a fluid feed/discharge system made by using the same. The method comprises the steps of heat-treating the surface of a stainless steel or titanium-base alloy having an Al content of 0.5 percent by weight to 7 percent by weight either at 300° C. to 700° C. in a mixed gas atmosphere composed of an inert gas and 500 ppb to 1 percent H2O gas or 1 ppm to 500 ppm oxygen gas, or alternatively at 20° C. to 300° C. in a mixed gas atmosphere composed of an oxygen gas and at least 100 ppm ozone gas to form an oxidation-passive layer containing an aluminum oxide or a titanium oxide.

Abstract: An air cooling device includes at least one cooling unit which includes an oblique honeycomb having front, rear, upper, and lower openings and disposed so that air to be cooled is introduced into the front opening and cooled air is discharged from the rear opening, a cooling water supply means which supplies cooling water to the upper opening of the oblique honeycomb, and a water receiving section which receives discharge water discharged from the lower opening of the oblique honeycomb, and a blower means which introduces air to be cooled into the front opening of the oblique honeycomb and allows cooled air to be discharged from the rear opening of the oblique honeycomb, wherein the height of one oblique honeycomb in the cooling unit is 200 to 800 mm. The air cooling device has high thermal efficiency, a small liquid-gas ratio, and a small pressure drop, and is capable of saving space and energy.

Abstract: An on-off device disposed at each of the inlet and the outlet of a fluid controller is one of five kinds of on-off devices, i.e., on-off device having a two-port valve, on-off device having a two-port valve and a three-port valve, on-off device having a two-port valve and two three-port valves, on-off device having two three-port valves, and on-off device having three three-port valves, The main bodies of two-port valves of all types of on-off devices are identical in configuration and each have an inlet and an outlet in a bottom face thereof. Main bodies of three-port valves of all types of on-off devices are identical in configuration and each formed in a bottom face thereof with an inlet, an outlet always in communication with the inlet, and an inlet-outlet subopening.