Abstract: Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the pair of conductors is made of a metal, and the semiconductor layer comprises an amorphous silicon that can form a silicide region with the metal as reacting at a reaction rate of not less than 10 m/sec. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is made of a metal silicide-reacting with the amorphous silicon, and in that the silicide region formed is conic.

Abstract: A cleaning method comprising the steps of degassing gas dissolved in a cleaning liquid therefrom to a value not more than 5 ppm, loading ultrasonics with a frequency of 1 MHz or more to the cleaning liquid, and cleaning an object for cleaning with the cleaning liquid. Also included, is a cleaning method comprising the steps of: degassing gas dissolved in a surface-active agent-containing cleaning liquid therefrom to a value not more than 5 ppm, loading ultrasonics with a frequency of 1 MHz or more to the cleaning liquid, and cleaning an object for cleaning with the cleaning liquid. Water vapor may be used to sweep gas from a degassing device.

Abstract: A coupling comprises a holding member having a U-shaped cross section, and a channel member held by the holding member. The holding member has an upper wall formed with screw bores for use in attaching the holding member to a fluid controller. The channel member comprises a body having an inner channel and fitted in a space between the upper wall of the holding member and a lower wall thereof, a tubular upward projection communicating with the inner channel of the body and having an upper end inserted in a through bore in the upper wall of the holding member to communicate with a downward channel of the fluid controller, and a tubular lateral projection communicating with the inner channel of the body and extending laterally. The upper end of the channel member has an outward flange, and the through bore of the upper wall of the holding member has an inward flange for supporting the flange.

Abstract: A valve main body is internally formed with a main channel extending from a rear end face thereof nearly to a first valve actuator, and two subchannels communicating with the main channel via second and third valve actuators, respectively. The valve main body has a slanting face extending forwardly downward and having the first valve actuator mounted thereon.

Abstract: A system of the invention for supervising piping work comprises a machine for performing piping work such as welding of pipes or tightening of pipe joints under predetermined conditions, check means for checking whether the piping work has been executed properly based on predetermined values of piping work conditions and actual piping work data, a host computer for accumulating the predetermined values of piping work conditions, the actual piping work data and the result of checking, and communication means for transmitting the predetermined values of piping work conditions, the actual piping work data and the result of checking.

Abstract: A semiconductor circuit assembly is capable of accurately storing a plurality of analog or multi-valued data using circuitry having a small surface area. The circuit assembly includes a first circuit provided in the form of a target memory cell device comprising memory cells which conduct the writing and storage of analog signals. The first circuit has output terminals for outputting stored values to the exterior as voltage signals. Mechanisms supply at least two index voltages. A second circuit performs the function of halting the writing of the analog signals when the output signal at the first circuit output terminals reaches a value representing a desired voltage plus the difference between the two index voltages.

Abstract: Provided is a lithographic developer used to develop a resist pattern having regions with different sizes and shapes, by dissolving and removing a resist region of a resist layer formed in the resist pattern, wherein the developer comprises a surfactant capable of increasing the dissolution of a resist in the resist region to be dissolved and removed, having a smaller dissolving-and-removing area on the surface of the resist layer.

Abstract: A valve body has a main body formed with an inflow channel for a first fluid, an inflow channel for a second fluid, and an outflow channel for the first and second fluids in common. The first fluid inflow channel is always in communication with the common outflow channel through a valve chamber. A valve element operates to bring the second fluid inflow channel into or out of communication with the first fluid inflow channel and the common outflow channel.

Abstract: A cleaning method and a cleaning device which require an extremely short time for processing and also insure and extremely high cleaning effect. Foreign materials deposited on a substrate are removed with a cleaning liquid prepared by mixing a basic and water-soluble fluoride and an oxidizing agent in pure water.

Abstract: A valve mount having two valves removably installed thereon from above as arranged in a direction comprises an inflow channel forming member having a channel in communication with an inlet of the valve disposed at one end thereof, a communication channel forming member having a channel for causing an outlet of the valve at the end to communicate with an inlet of the other valve adjacent thereto, an outflow channel forming member having a channel in communication with an outlet of the other valve, and a subchannel forming member having a channel in communication with an inlet-outlet port formed in the other valve.

Abstract: A thin film transistor device with its leakage current being controlled is provided. With such a thin film transistor device incorporated, a liquid crystal display apparatus presents a high-contrast image at a reduced power consumption. The thin film transistor is formed on an insulating substrate. The gate electrode of the transistor is electrically floating gate electrode, which is capacitance coupled to one or more input electrodes. The liquid crystal display apparatus incorporates the thin film transistor in its switching element and/or driving circuit.

Abstract: A system of the invention for supervising piping work comprises a machine for performing piping work such as welding of pipes or tightening of pipe joints under predetermined conditions, check means for checking whether the piping work has been executed properly based on predetermined values of piping work conditions and actual piping work data, a host computer for accumulating the predetermined values of piping work conditions, the actual piping work data and the result of checking, and communication means for transmitting the predetermined values of piping work conditions, the actual piping work data and the result of checking.

Abstract: A fluid control device has formed in a valve main body a main channel communicating with an inlet of a channel within a massflow controller, and a relatively long subchannel and a relatively short subchannel both communicating with the main channel. The process gas to be assure of high purity is passed through the relatively long subchannel.

Abstract: A nonvolatile semiconductor memory which is capable of a high degree of integration and can conduct the writing of analog data at high speed and with a high degree of accuracy.The memory device comprises two or more semiconductor devices comprising a first MOS transistor having a first floating gate which is electrically insulated, a first electrode which is capacitively coupled with the first floating gate, a second electrode provided with the first floating gate via a tunnel junction, and a third electrode connected to the second electrode via a switch; the present invention is further provided with a fourth electrode connected commonly with the third electrodes of the semiconductor devices, a fifth electrode connected commonly with the source electrodes of the first MOS transistors, a sixth electrode which is capacitively coupled with the fourth electrode, and a seventh electrode which is connected with the fourth electrode via a switch.

Abstract: A simple semiconductor circuit by which analog data or multilevel data can be fetched and stored. The circuit receives a first signal and converts the first signal into a second signal composed of multilevel. The second signal is fed back to the circuit. The circuit is constituted of a first circuit which converts the first signal into a signal group composed of multiple quantized signals and second circuit which converts the signal group into the second signal. In addition, the first or/and second circuits are constituted of one or more neuron MOS transistors.

Abstract: A feedback circuit is provided which is capable of realizing handshake functions, flip flop functions, and other functions using a smaller number of elements and chip surface. The threshold circuit is provided with an electrode which is electrically floating and a plurality of input electrodes which are connected with the floating electrode via capacity elements, and the circuit has a mechanism for essentially determining the potential of the floating electrode by means of the potentials applied to the input electrodes, and the output of the circuit is determined by the potential of the floating gate; the output of the threshold circuit is connected to at least one of the plurality of input electrodes, either directly, or via at least one circuit of some type.

Abstract: A passive film forming method enabling formation of a passivated-oxide film having a layer made of chromium oxide in its outermost surface without conducting composite electric polishing. Also disclosed is a ultra-high purity fluid feed system, processing apparatus, and a fluid contracting component, each of which is free of metal contamination and is excellent in the gas discharge characteristics, non-catalytic characteristics and corrosion resistance. The surface of the ferrite-based stainless steel containing Mn by not more than 0.03 wt %, Cu by not more than 0.05 wt %, C by not more than 0.01 wt %, and Al by not more 0.01 wt % is electrolytically polished, then moisture is removed from the surface of the stainless steel by making the steel in an inert gas, then a passivated oxide film having a layer made of non-crystalline chromium oxide is formed on the outermost surface thereof by executing heat treatment in a temperature range of 300.degree. C. to 600.degree. C.

Abstract: A semiconductor operational circuit conducts real-time analog vector operations to permit the determination of the center of gravity of an image of a moving object. The circuit employs a first processing stage utilizing CMOS source follower circuits to perform weighted linear sum operations on the analog signals. A second processing stage utilizes comparator circuitry to perform comparison operations involving data from the weighted-sum and non-weighted-sum operations. A third processing stage utilizes exclusive OR gates to provide digital data outputs based on the comparison operation results.

Abstract: A semiconductor integrated circuit includes one or more neuron MOS transistors on a substrate. The MOS transistor comprises a semiconductor region of one conductivity type, source and drain regions of opposite conductivity type disposed in this region, floating gate disposed on an insulating film between the source and drain regions, and a plurality of input coupling electrodes making capacitive coupling with the floating gate through the insulating film, wherein the floating gate is connected to at least one switching device.

Abstract: A chemical mechanical polishing apparatus is provided which is capable of polishing an essentially non-streaked mirrored surface in a highly efficient manner, and which is capable of achieving a degree of flatness of +/-0.1 mm or less.