Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.

Abstract: A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and second gate structures, respectively. The first and second gate structures include first and second gate dielectric layers formed over the first and second channel regions and first and second gate electrode layers formed over the first and second gate dielectric layers. The first and second gate structures are aligned along a first direction. The first gate structure and the second gate structure are separated by a separation plug made of an insulating material. The first gate electrode layer is in contact with a side wall of the separation plug.

Abstract: A semiconductor device and a manufacturing method thereof are provided. A semiconductor device includes a first semiconductor die, a second semiconductor die, a bonding layer, and a through die via. The first semiconductor die includes a first semiconductor substrate and a first conductive pad exposed at an active surface of the first semiconductor die. The second semiconductor die includes a second semiconductor substrate and a second conductive pad exposed at an active surface of the second semiconductor die. The first semiconductor die is stacked over the second semiconductor die. The bonding layer is disposed between the first and the second semiconductor die. The through die via electrically connects the first semiconductor die and the second semiconductor die. The through die via is embedded in the first semiconductor substrate, penetrates through the first conductive pad and the bonding layer, and reaches the second conductive pad.

Abstract: A method and structure for forming an enhanced metal capping layer includes forming a portion of a multi-level metal interconnect network over a substrate. In some embodiments, the portion of the multi-level metal interconnect network includes a plurality of metal regions. In some cases, a dielectric region is disposed between each of the plurality of metal regions. By way of example, a metal capping layer may be deposited over each of the plurality of metal regions. Thereafter, in some embodiments, a self-assembled monolayer (SAM) may be deposited, where the SAM forms selectively on the metal capping layer, while the dielectric region is substantially free of the SAM. In various examples, after selectively forming the SAM on the metal capping layer, a thermal process may be performed, where the SAM prevents diffusion of the metal capping layer during the thermal process.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip having a flash gate structure disposed over a substrate and including a control gate separated from a floating gate by an inter-electrode dielectric. One or more first sidewall spacers laterally surround the flash gate structure. The inter-electrode dielectric is directly between the one or more first sidewall spacers. A logic gate structure is disposed over the substrate and is laterally surrounded by one or more second sidewall spacers having a smaller height than the one or more first sidewall spacers.

Abstract: The present disclosure relates to an integrated antenna structure. The integrated antenna structure includes a radiator and a ground plane disposed between a semiconductor substrate and the radiator. A conductive structure is separated from the ground plane by the semiconductor substrate. The conductive structure is electrically coupled to the ground plane. The semiconductor substrate has a thickness of less than approximately 100 microns.

Abstract: The embodiments of mechanisms for doping wells of finFET devices described in this disclosure utilize depositing doped films to dope well regions. The mechanisms enable maintaining low dopant concentration in the channel regions next to the doped well regions. As a result, transistor performance can be greatly improved. The mechanisms involve depositing doped films prior to forming isolation structures for transistors. The dopants in the doped films are used to dope the well regions near fins. The isolation structures are filled with a flowable dielectric material, which is converted to silicon oxide with the usage of microwave anneal. The microwave anneal enables conversion of the flowable dielectric material to silicon oxide without causing dopant diffusion. Additional well implants may be performed to form deep wells. Microwave anneal(s) may be used to anneal defects in the substrate and fins.

Abstract: An IC is provided. The IC includes a plurality of first cells arranged in a column of a first array, and a plurality of second cells arranged in a column of a second array. P-type fin field-effect transistors of the plurality of first cells share a first semiconductor fin including silicon germanium. P-type FinFETs of two adjacent second cells share a second semiconductor fin including Si. The first array is separated from the second array. A length of the second semiconductor fin is shorter than a length of the first semiconductor fin.

Abstract: A method includes reserving a routing track within a cell, the cell includes signal lines for connection to elements within the cell, the cell further includes a plurality of routing tracks, the reserved routing track is one of the plurality of routing tracks, and the reserved routing track is free of the signal lines. The method includes placing the cell in a chip-level layout, wherein the chip-level layout includes a plurality of power rails. The method includes determining whether any of the plurality of power rails overlaps with any of the plurality of routing tracks other than the reserved routing track. The method includes adjusting a position of the cell in the chip-level layout in response to a determination that at least one power rail of the plurality of power rails overlaps with at least one routing track of the plurality of routing tracks other than the reserved routing track.

Abstract: An analog to digital converter (ADC) device includes ADC circuits, a calibration circuit, and a skew adjusting circuit. The ADC circuits convert an input signal according to interleaved clock signals, in order to generate first quantized outputs. The calibration circuit performs at least one calibration computation according to the first quantized outputs to generate second quantized outputs. The skew adjusting circuit determines calculating signals, to which the second quantized outputs correspond in a predetermined interval, and averages the calculating signals to generate a reference signal, and compares the reference signal with each of the calculating signals to generate detecting signals, and determines whether the detecting signals are adjusted or not according to a signal frequency to generate adjusting signals, in order to reduce a clock skew in the ADC circuits.

Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.

Abstract: A method of forming a semiconductor package includes receiving a carrier, coating the carrier with a bonding layer, forming a first insulator layer over the bonding layer, forming a backside redistribution layer over the first insulator layer, forming a second insulator layer over the backside redistribution layer, patterning the second insulator layer to form a recess that extends through the second insulator layer and to the backside redistribution layer, filling the recess with a solder, and coupling a surface-mount device (SMD) to the solder.

Abstract: A redistribution structure includes a first dielectric layer and a first redistribution circuit layer. The first dielectric layer includes a first via opening. The first redistribution circuit layer is disposed on the first dielectric layer and includes a via portion filling the first via opening and a circuit portion connecting the via portion and extending over the first dielectric layer. A maximum vertical distance between an upper surface of the via portion and an upper surface of the circuit portion is substantially equal to or smaller than 0.5 ?m.

Abstract: A method of transferring heat in a package includes conducting heat from a first device to a second device by a low thermal resistance substrate path in a chip layer of the package, conducting heat from an integrated circuit (IC) to a first package layer of the package, conducting heat from the first package layer of the package to at least a first set of through-vias positioned in the chip layer, and conducting heat from the first set of through-vias to a surface of a second package layer opposite the chip layer. The first device and the second device is part of the IC chip. The first package layer is adjacent to the chip layer.

Abstract: A three-dimensional (3D) capacitor includes a semiconductor substrate; one or more fins extending from the semiconductor substrate; an insulator material between each of the one or more fins; a dielectric layer over a first portion of the one or more fins and over the insulator material; a first electrode over the dielectric layer; spacers on sidewalls of the first electrode; and a second electrode over a second portion of the one or more fins and over the insulator material, wherein the first and second portions are different.

Abstract: A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

Abstract: A semiconductor package has at least one die, a first redistribution layer and a second redistribution layer. The first redistribution layer includes a first dual damascene redistribution pattern having a first via portion and a first routing portion. The second redistribution layer is disposed on the first redistribution layer and over the first die and electrically connected with the first redistribution layer and the first die. The second redistribution layer includes a second dual damascene redistribution pattern having a second via portion and a second routing portion. A location of the second via portion is aligned with a location of first via portion.

Abstract: A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

Abstract: A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.

Abstract: A semiconductor chuck is provided. The semiconductor chuck includes a metal base and a first adhesive layer over the metal base. The semiconductor chuck includes a dielectric layer over the first adhesive layer, wherein the dielectric layer is adhered to the metal base by the first adhesive layer. The semiconductor chuck includes a removable protective plate over the dielectric layer, wherein a first portion of the removable protective plate covers a top surface of the dielectric layer.