Abstract: A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having fin structures. The substrate includes a material having a substrate thermal expansion coefficient. The semiconductor structure also includes an isolation structure between the fin structures. The isolation structure includes a first dielectric material and a second dielectric material. The first dielectric material has a first thermal expansion coefficient and the second dielectric material has a second thermal expansion coefficient. The substrate thermal expansion coefficient is in between the first thermal expansion coefficient and the second thermal expansion coefficient.

Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: An interconnect structure includes a plurality of first pads arranged to form a first array and a plurality of second pads arranged to form a second array. Each of the first array has a first row, a second row and an mth row extending along a first direction and parallel to each other along a second direction. The first pads in each of the first row, the second row and the mth row are grouped into a first group, a second group and an nth group extending along the second direction. The second pads in each of the first row, the second row and the mth row are grouped into a first group, a second group and an nth group extending along the second direction. The interconnect structure further includes a plurality of first conductive lines, a plurality of second conductive lines and a plurality of nth conductive lines.

Abstract: The present disclosure provides an interconnect structure, including a first metal line, a second metal line spaced away from the first metal line, a conductive contact over the first metal line, including a first portion, a second portion over the first portion, wherein a bottom width of the second portion is greater than a top width of the first portion, wherein a shortest distance between the second portion and the second metal line is in a range from 50 Angstrom to 200 Angstrom, and a third portion over the second portion, wherein a bottom width of the third portion is greater than a top width of the second portion, the entire first portion and the entire second portion are under a coverage of a vertical projection area of the third portion, a first layer, and a second layer over the first layer.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially encapsulating the integrated circuit die; a conductive via extending through the encapsulant; a redistribution structure on the encapsulant, the redistribution structure including: a metallization pattern electrically coupled to the conductive via and the integrated circuit die; a dielectric layer on the metallization pattern, the dielectric layer having a first thickness of 10 ?m to 30 ?m; and a first under-bump metallurgy (UBM) having a first via portion extending through the dielectric layer and a first bump portion on the dielectric layer, the first UBM being physically and electrically coupled to the metallization pattern, the first via portion having a first width, a ratio of the first thickness to the first width being from 1.33 to 1.66.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask layer to form a first opening, where in a plan view a major axis of the opening extends in a direction that is perpendicular to a major axis of a spacer of the plurality of spacers. The method also includes depositing a sacrificial material in the opening, patterning the sacrificial material, etching the first mask layer using the plurality of spacers and the patterned sacrificial material, etching the target layer using the etched first mask layer to form second openings in the target layer, and filling the second openings in the target layer with a conductive material.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.

Abstract: A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.

Abstract: A method of forming a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate, the first semiconductor layers and the second semiconductor layers having different compositions, forming a dummy gate structure across the fin structure, forming gate spacers on opposite sidewalls of the dummy gate structure, respectively, removing the dummy gate structure to form a gate trench between the gate spacers, removing portions of the first semiconductor layers in the gate trench, such that the second semiconductor layers are suspended in the gate trench to serve as nanosheets, forming a first titanium nitride layer wrapping around the nanosheets, wherein an atomic ratio of titanium to nitrogen of the first titanium nitride layer is less than 1, and forming a metal fill layer over the first titanium nitride layer.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, a first source region and a first drain region disposed over the substrate and connected to the first channel region such that the first channel region is disposed between the first source region and the first drain region, a gate dielectric layer disposed on and wrapping the first channel region, a gate electrode layer disposed on the gate dielectric layer and wrapping the first channel region, and a second source region and a second drain region disposed over the substrate and below the first source region and the first drain region, respectively. The second source region and the second drain region are in contact with the gate dielectric layer. A lattice constant of the first source region and the first drain region is different from a lattice constant of the second source region and the second drain region.

Abstract: A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

Abstract: A semiconductor structure includes a substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region; a first isolation disposed in the first region, wherein the first isolation is between a first source and a first drain, a first spacer overlaps the first isolation, the first isolation is separated from the first spacer by a first gate dielectric.

Abstract: A second metal structure such as a metal plug is formed over a first metal structure, such as a metal line, by causing metal material from the first metal structure to migrate into an opening in a dielectric layer over the first metal structure. The metal material, which may be copper, is of a type that undergoes a reduction in density as it oxidizes. Migration is induced using gases that alternately oxidize and reduce the metal material. Over many cycles, the metal material migrates into the opening. In some embodiments, the migrated metal material partially fills the opening. In some embodiments, the migrated metal material completely fills the opening.

Abstract: A method of forming a semiconductor structure includes first forming a metal gate (MG) over a semiconductor layer, a gate spacer on a sidewall of the MG, and a source/drain (S/D) feature disposed in the semiconductor layer and adjacent to the MG, forming an S/D contact (MD) over the S/D feature, forming a first ILD layer over the MG and the MD, and subsequently patterning the first ILD layer to form an opening. The method further includes forming a metal layer in the opening, such that the metal layer contacts both the MG and the MD, removing a top portion of the metal layer to form a trench, filling the trench with a dielectric layer, and subsequently forming a second ILD layer over the dielectric layer.

Abstract: The present disclosure provides a package structure. The package structure includes a base, a device disposed on the base, a lid disposed over the base and the device and spaced apart from the device, and a first metal component disposed between the device and the lid, wherein the first metal component contacts the device and the lid. The present disclosure also provides a method for forming a package structure.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution structure, and conductive vias. The molded semiconductor device comprises a sensor die with a first surface and a second surface opposite the first surface, wherein the sensor die has an input/output region and a sensing region at the first surface. The first redistribution structure is disposed on the first surface of the sensor die, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and the first redistribution structure comprises a conductive layer having a redistribution pattern and a ring structure. The redistribution pattern is electrically connected with the sensor die. The ring structure surrounds the sensing region and is separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern.

Abstract: A package includes first and second redistribution structures, a die, a permalloy structure, a molding material and a plurality of through vias. The first redistribution structure includes a first metal pattern. The die is disposed over the first redistribution structure. The molding material is disposed over the first redistribution structure and surrounds the die and the permalloy structure. The second redistribution structure is disposed over the die, the permalloy structure and the molding material, and includes a second metal pattern. The through vias penetrate the molding material and connects the first metal pattern to the second metal pattern. The permalloy structure includes a first member and a second member isolated from the first member, the first member and the second member are surrounded by the plurality of through vias and sandwiched between the first metal pattern and the second metal pattern. A method for forming a package is also provided.

Abstract: A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.

Abstract: A method for forming an SOI substrate is provided. The method includes following operations. A recycle substrate is received. A first multilayered structure is formed on the recycle substrate. A trench is formed in the first multilayered structure. A lateral etching is performed to remove portions of sidewalls of the trench to form a recess in the first multilayered structure. The trench and the recess are sealed with an epitaxial layer, and a potential cracking interface is formed in the first multilayered structure. A second multilayered structure is formed over the first multilayered structure. The device layer of the recycle substrate is bonded to an insulator layer over an carrier substrate. The first multilayered structure is cleaved along the potential cracking interface to separate the recycle substrate from the second multilayered structure, the insulator layer and the carrier substrate. The device layer is exposed.