Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract: A first substrate and a second substrate are provided. An alignment process is performed on a surface of the first substrate and a surface of the second substrate respectively. A liquid crystal mixture is prepared, where the liquid crystal mixture includes a liquid crystal molecule and a liquid crystal monomer having a functional group of diacrylates, and the liquid crystal monomer having the functional group of diacrylates occupies 0.01-2 wt % of the liquid crystal mixture. The first substrate and the second substrate are assembled, and the liquid crystal mixture is filled therebetween. A polymerization curing process is performed such that the liquid crystal monomer having the functional group of diacrylates is polymerized to respectively form a liquid crystal polymer film on the aligned surfaces of the first and second substrates. The method enhances anchoring energy and reduces problems of V-T shift, surface gliding, and residual image.

Abstract: An electrical connecting structure including a conductive pad, a polymer bump and a patterned conductive layer is provided. The conductive pad is on a substrate and the polymer bump is disposed over the substrate. The patterned conductive layer is disposed on the polymer bump and electrically connects to the conductive pad, wherein the patterned conductive layer covers a portion of the polymer bump and exposes another portion of the polymer bump.

Abstract: An OCB mode liquid crystal display panel having a plurality of pixel regions includes a first substrate, a second substrate, dot liquid crystal polymer patterns and an OCB liquid crystal material. The first substrate has a first alignment treated layer thereon, the second substrate has a second alignment treated layer thereon, and the dot liquid crystal polymer patterns are on the first alignment treated layer and the second alignment treated layer. Each of the dot liquid crystal polymer patterns has an area between 1˜225 ?m2. The second substrate is opposite to the first substrate, and the OCB liquid crystal material is between the first substrate and the second substrate.

Abstract: A liquid crystal display including a liquid crystal panel and a biaxial compensation film is provided. The liquid crystal panel has a first surface and a second surface. The biaxial compensation film is disposed on the first surface and includes a C-plate compensation film and nano-structures on the C-plate compensation film serving as an A-plate compensation film.

Abstract: A manufacturing method of a contact structure includes first providing a substrate on which a contact pad has already been formed. Afterwards, a polymer bump is formed on the contact pad. Next, a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.

Abstract: A manufacturing method of an optical film is provided. The method includes the following steps. A substrate is provided first and a surface of the substrate is aligned or an alignment layer is formed on the substrate. Next, a defined pattern layer is formed on the aligned surface of the substrate or on a surface of the alignment layer at a first temperature. A first liquid crystal layer is then coated on the aligned surface of the substrate or the surface of the alignment layer to cover the defined pattern layer. Then, a first curing step is performed at a second temperature to enable the defined pattern layer and the first liquid crystal layer to form the optical film. A portion of the optical film having the defined pattern layer is characterized by a different liquid crystal alignment property from the other portion of the optical film.

Abstract: A contact structure including a contact pad, a polymer bump and a conductive layer is provided in the present invention. The contact pad is disposed on a substrate. The polymer bump is disposed on the contact pad. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad. The invention further discloses a manufacturing method of a contact structure. First, a substrate is provided having a contact pad already formed thereon. Then, a polymer bump is formed on the contact pad and a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.

Abstract: A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

Abstract: A base of circuit board, a circuit board, and a method of fabricating thereof are provided. The circuit board includes a substrate, a plurality of elastic bumps and a patterned circuit layer. The elastic bumps arranged in at least an array are located on the substrate. The patterned circuit layer is located on a portion of the elastic bumps and a portion of the substrate. The base of the circuit board and the method of fabricating thereof are also included in the present invention.

Abstract: A bonding inspection structure is provided. The bonding inspection structure includes at least a elastic bump located on a substrate. At least an opening is formed in the top portion of the elastic bump. An inspection area of the top portion of the elastic bump is larger than an area of the opening.

Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

Abstract: A direct patterning method for manufacturing a metal layer of a semiconductor device is provided. The claimed method reduces the materials and hours required by prior methods such as the thin film depositing method for a substrate, and the photolithographic method for manufacturing a transistor. The preferred embodiment of the present invention comprises a step of defining the pattern of the seeder material and a step of selectively thin film deposition. The direct patterned technology for the seeder and a chemical bath deposition (CBD) are utilized to provide the thin film growing method with non-vacuum and selective deposition. The object of the invention is applied to produce the wire or electrode, within the semiconductor device, or to deposit and manufacture the thin film in the large-area transistor array or a reflective layer.

Abstract: A method of manufacturing and driving an optically compensated birefringence (OCB) mode liquid crystal (LC) panel is provided. In the method, the OCB LC panel is applied which is characterized that a closed structure region with HAN, VA or Bend property is around a display region of the OCB LC panel. Thereafter, the OCB LC panel is driven by a mode of multistage voltage variation. The mode of multistage voltage variation includes applying a high voltage to LC molecules in the OCB LC panel for transferring them to a bend or a VA state, decaying the high voltage to a low voltage above a bend state holding voltage of the OCB LC panel, and turning off the voltage to zero so as to maintain the configuration of LC molecules in the OCB LC panel in a ?-twist state.

Abstract: An optical sheet suitable for linear polarized light to pass through is provided. The optical sheet includes a substrate and a retardation film. The retardation film herein is located on the substrate and has a plurality of optical axes with different extending directions. The linear polarized light after passing through the retardation film is converted into a plurality of linear polarized light with different polarization directions, wherein the retardation film substantially has a phase retardation of ?/2 at anywhere of the area where the linear polarized light passes through and ? is the wavelength of the linear polarized light. Besides, the present invention also provides a display apparatus, a fabricating method of an optical sheet and a fabricating method of a display apparatus.

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.

Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Abstract: A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.

Abstract: A multi-function integrated polarizer/optical film structure and manufacturing method thereof solves the disadvantages of O type or E type polarizers that cannot simultaneously have high polarizing efficiency and high transmittance. The present invention utilizes optical design for a polarizer/optical film having a plurality of material layers on substrates. The present invention is a multi-function integrated polarizer/optical film structure and manufacturing method thereof, that allows an LCD image to have high polarizing efficiency, high transmittance, wide-angle, high contrast and super-film characteristics simultaneously.

Abstract: A method of fabricating a bonding structure having compliant bumps includes first providing a first substrate and a second substrate. The first substrate includes first bonding pads. The second substrate is disposed on one side of the first substrate and includes second bonding pads and compliant bumps disposed thereon. The second bonding pads are opposite to the first bonding pads. Next, a non-conductive adhesive layer and ball-shaped spacers are formed between the first and the second substrates. Finally, the first substrate, the non-conductive adhesive layer, and the second substrate are compressed, such that the compliant bumps on the second bonding pads of the second substrate pass through the non-conductive adhesive layer and are electrically connected to the first bonding pads of the first substrate, respectively. The ball-shaped spacers are distributed in the non-conductive adhesive layer sandwiched between the first and the second substrates for maintaining the gap therebetween.