Abstract: A sensor device and a sensor arrangement for determining an electrically induced magnetic field are disclosed. The sensor device includes a busbar and a first magnetic field sensor arranged on the first busbar surface. The busbar has a busbar longitudinal axis, a first busbar surface, a first recess, and a second recess. The first recess and the second recess extend substantially orthogonal to the first busbar surface. The first recess and the second recess are spaced apart from each other along the busbar longitudinal axis. The first magnetic field sensor is arranged on the first busbar surface between the first recess and the second recess using an/the entire surface of the first magnetic field sensor facing the first busbar surface.

Abstract: An integrated rotation angle determining sensor unit in a measuring system for determining a rotation angle, comprising a shaft, rotatable around a rotation axis, having a transducer, a first semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a first Hall sensor system monolithically formed in the first semiconductor layer, and a second semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a second Hall sensor system monolithically formed in the second semiconductor layer, each Hall sensor system including at least one first Hall sensor and a second Hall sensor and a third Hall sensor.

Abstract: A magnetic field measuring device having a semiconductor body with a first surface running in an x-y plane, with a first and second magnetic field sensor disposed on the surface, and an axis of symmetry, which runs perpendicular to the first surface in the z-direction and to which the magnetic field sensors are positioned in a mirrored fashion, first and second magnets, which are spaced apart from one another and in each case have an axis and a polar surface running perpendicular to the axis and facing the semiconductor body. The magnetic polarity changes along the axes on a surface, whereby the axes run in the direction of the axis of symmetry, whereby the axis of symmetry runs between the axes of the magnets, whereby the surfaces of the magnets in each case are spaced apart in the z-direction to the first surface of the semiconductor body.

Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

Abstract: An integrated rotation-angle sensor unit in a measuring system for rotation angle determination, with a shaft that is rotatable about an axis of rotation with a transmitter, The sensor unit has a semiconductor layer with a top surface that can be arranged perpendicular to the axis of rotation and has a bottom surface, and two monolithic Hall sensor systems are implemented in the semiconductor layer. Each Hall sensor system has at least a first Hall sensor, a second Hall sensor, and a third Hall sensor, and the three Hall sensors of the first Hall sensor system are arranged on a first circle that is parallel to the top surface of the semiconductor layer and can be arranged concentrically around the axis of rotation.

Abstract: An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.

Abstract: A Hall sensor structure comprising a semiconductor body of a first conductivity type, a well region of a second conductivity type extending from a top side of the semiconductor body into the semiconductor body, at least three first semiconductor contact regions of the second conductivity type, each extending from a top side of the well region into the well region, at least one second semiconductor contact region of a second conductivity type, wherein the first semiconductor contact regions are spaced apart from one another and from an edge of the well region, a metallic connection contact layer is arranged on each first semiconductor contact region, the at least one second semiconductor contact region extends along the top side of the semiconductor body at least partially around the well region.

Abstract: A Hall sensor has a Hall sensor element, which has multiple connection points spaced apart from one another. A supply source serves for feeding an exciter current into the Hall sensor element and is connected to a first and a second connection point of the Hall sensor element. The Hall sensor has a first and a second comparison device. The first comparison device has a first input connected to a third connection point of the Hall sensor element, a second input connected to a reference signal generator for an upper reference value signal, and an output for a first comparison signal. The second comparison device has a third input connected to the third connection point, a fourth input connected to a reference signal generator for a lower reference value signal, and an output for a second comparison signal. The outputs are connected to an evaluation device for generating an error signal as a function of the first and second comparison signal.

Abstract: A vertical Hall sensor structure having a substrate layer, a semiconductor area of a first conductivity type, at least a first, a second and a third semiconductor contact area of the first conductivity type extending from an upper surface of the semiconductor area into the semiconductor area, and at least a first semiconductor contact area of a second conductivity type, wherein the semiconductor contact areas of the first conductivity type are spaced apart from each other and a metal connection contact layer is arranged on each semiconductor contact area of the first conductivity type. The first semiconductor contact area of the second conductivity type is adjacent to the first semiconductor contact area of the first conductivity type or is spaced at a distance of at most 0.2 ?m from the first semiconductor contact area of the first conductivity type.

Abstract: A sensor device (10) is described. The sensor device (10) comprises a laterally arranged double coil (20) with a first coil (30a) and a second coil (30b), wherein first windings (40a) of the first coil (30a) and second windings (40b) of the second coil (40b) are arranged in a spiral shape. The first windings (40a) from a first center point (50a) lead to a common region (60) and the second windings (40b) from a second center point (50b) lead to the common region (60) as well.

Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

Abstract: A distance measuring device with two magnetic field sensors and a permanent magnet and a semiconductor body is provided. The device includes a monolithically integrated evaluation circuit, and a difference signal can be determined by means of the magnetic field sensors and provides an output signal as a result of the determination. The value of the output signal based on the neutralization of a magnetic-flux-free region is a function of a distance of a ferromagnetic sensing element from the two magnetic field sensors. The semiconductor body is arranged between U-shaped pole shanks of the magnet, which is magnetized in the X direction, wherein the first magnetic field sensor is arranged in an area located between two opposing shanks of the first pole, and the second magnetic field sensor is arranged in an area located between two opposing shanks of the second pole.

Abstract: A rotation angle measurement method and a circuit, a rotation angle measuring system including a shaft, a transducer, a first sensor system with at least one magnetic field sensor of a first type for measuring a magnetic field component Bz and a second sensor system with at least one magnetic field sensor of a second type for detecting magnetic field components Bx, By being provided, a first or second measured value being ascertained with the aid of each sensor system at a first point in time, a first or second rotation angle value being determined for each measured value, a first output rotation angle value being determined from the first rotation angle value and a known constant angle offset between the two sensor systems as a reference value for the second sensor system, a deviation of the second rotation angle value from the first output rotation angle value being ascertained.

Abstract: A semiconductor sensor structure that includes a first and a second semiconductor wafer. The second semiconductor wafer has a substrate with integrated circuit with at least one metallic terminal contact, and the first semiconductor wafer has a semiconductor layer of a second conductivity type with a three-dimensional Hall sensor structure with a sensor region and at least three first metallic terminal contacts that are spaced apart from one another are formed on a front, and at least three second metallic terminal contacts that are spaced apart from one another are formed on a back. The terminal contacts are each formed on a highly doped semiconductor contact region of a second conductivity type and are arranged at an offset from the second terminal contacts in a projection perpendicular to the front.

Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.

Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.

Abstract: A rotation angle measurement method and a circuit, a rotation angle measuring system including a shaft, a transducer, a first sensor system with at least one magnetic field sensor of a first type for measuring a magnetic field component Bz and a second sensor system with at least one magnetic field sensor of a second type for detecting magnetic field components Bx, By being provided, a first or second measured value being ascertained with the aid of each sensor system at a first point in time, a first or second rotation angle value being determined for each measured value, a first output rotation angle value being determined from the first rotation angle value and a known constant angle offset between the two sensor systems as a reference value for the second sensor system, a deviation of the second rotation angle value from the first output rotation angle value being ascertained.

Abstract: An integrated rotation angle determining sensor unit in a measuring system for determining a rotation angle, comprising a shaft, rotatable around a rotation axis, having a transducer, a first semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a first Hall sensor system monolithically formed in the first semiconductor layer, and a second semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a second Hall sensor system monolithically formed in the second semiconductor layer, each Hall sensor system including at least one first Hall sensor and a second Hall sensor and a third Hall sensor.

Abstract: An integrated rotation-angle sensor unit in a measuring system for rotation angle determination, with a shaft that is rotatable about an axis of rotation with a transmitter, The sensor unit has a semiconductor layer with a top surface that can be arranged perpendicular to the axis of rotation and has a bottom surface, and two monolithic Hall sensor systems are implemented in the semiconductor layer. Each Hall sensor system has at least a first Hall sensor, a second Hall sensor, and a third Hall sensor, and the three Hall sensors of the first Hall sensor system are arranged on a first circle that is parallel to the top surface of the semiconductor layer and can be arranged concentrically around the axis of rotation.