Patents Assigned to TDK-MICRONAS GMBH
  • Patent number: 11125838
    Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: September 21, 2021
    Assignee: TDK-Micronas GmbH
    Inventors: Martin Cornils, Maria-Cristina Vecchi
  • Patent number: 11114501
    Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: September 7, 2021
    Assignee: TDK-Micronas GmbH
    Inventors: Christian Sander, Martin Cornils
  • Patent number: 11005033
    Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: May 11, 2021
    Assignee: TDK-Micronas GmbH
    Inventors: Martin Cornils, Maria-Cristina Vecchi
  • Publication number: 20210063203
    Abstract: A rotation angle measurement method and a circuit, a rotation angle measuring system including a shaft, a transducer, a first sensor system with at least one magnetic field sensor of a first type for measuring a magnetic field component Bz and a second sensor system with at least one magnetic field sensor of a second type for detecting magnetic field components Bx, By being provided, a first or second measured value being ascertained with the aid of each sensor system at a first point in time, a first or second rotation angle value being determined for each measured value, a first output rotation angle value being determined from the first rotation angle value and a known constant angle offset between the two sensor systems as a reference value for the second sensor system, a deviation of the second rotation angle value from the first output rotation angle value being ascertained.
    Type: Application
    Filed: August 31, 2020
    Publication date: March 4, 2021
    Applicant: TDK-Micronas GmbH
    Inventors: Marcus Christian MEYER, Hans Christian Paul DITTMANN
  • Publication number: 20210063204
    Abstract: An integrated rotation angle determining sensor unit in a measuring system for determining a rotation angle, comprising a shaft, rotatable around a rotation axis, having a transducer, a first semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a first Hall sensor system monolithically formed in the first semiconductor layer, and a second semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a second Hall sensor system monolithically formed in the second semiconductor layer, each Hall sensor system including at least one first Hall sensor and a second Hall sensor and a third Hall sensor.
    Type: Application
    Filed: August 31, 2020
    Publication date: March 4, 2021
    Applicant: TDK-Micronas GmbH
    Inventors: Yan BONDAR, Marcus Christian MEYER, Hans Christian Paul DITTMANN
  • Publication number: 20210055132
    Abstract: An integrated rotation-angle sensor unit in a measuring system for rotation angle determination, with a shaft that is rotatable about an axis of rotation with a transmitter, The sensor unit has a semiconductor layer with a top surface that can be arranged perpendicular to the axis of rotation and has a bottom surface, and two monolithic Hall sensor systems are implemented in the semiconductor layer. Each Hall sensor system has at least a first Hall sensor, a second Hall sensor, and a third Hall sensor, and the three Hall sensors of the first Hall sensor system are arranged on a first circle that is parallel to the top surface of the semiconductor layer and can be arranged concentrically around the axis of rotation.
    Type: Application
    Filed: August 24, 2020
    Publication date: February 25, 2021
    Applicant: TDK-Micronas GmbH
    Inventors: Yan BONDAR, Marcus Christian MEYER, Hans Christian Paul DITTMANN
  • Publication number: 20210003641
    Abstract: A vertical Hall sensor structure having a substrate layer, a semiconductor area of a first conductivity type, at least a first, a second and a third semiconductor contact area of the first conductivity type extending from an upper surface of the semiconductor area into the semiconductor area, and at least a first semiconductor contact area of a second conductivity type, wherein the semiconductor contact areas of the first conductivity type are spaced apart from each other and a metal connection contact layer is arranged on each semiconductor contact area of the first conductivity type. The first semiconductor contact area of the second conductivity type is adjacent to the first semiconductor contact area of the first conductivity type or is spaced at a distance of at most 0.2 ?m from the first semiconductor contact area of the first conductivity type.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 7, 2021
    Applicant: TDK-Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Reinhard ERWE, Martin CORNILS, Kerwin KHU
  • Publication number: 20200393523
    Abstract: An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 17, 2020
    Applicant: TDK-Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Reinhard ERWE, Martin CORNILS, Kerwin KHU
  • Patent number: 10854540
    Abstract: A packaged IC component having a semiconductor body and a printed circuit board. The semiconductor body includes a monolithically integrated circuit and at least two metal contact areas. The printed circuit board has a first and second region and a top and a bottom. At least two formed terminal contacts and two conductive traces are connected to the terminal contacts, and the terminal contacts are designed as contact holes passing through the printed circuit board, and are arranged in the first region of the printed circuit board. The two metal contact areas are connected to the conductive traces by bond wires, and the semiconductor body is implemented as a die. The die is arranged in the second region on the top of the printed circuit board, and the semiconductor body and the bond wires are completely covered with a potting compound on the top of the printed circuit board.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: December 1, 2020
    Assignee: TDK-Micronas GmbH
    Inventors: Joerg Franke, Thomas Leneke
  • Patent number: 10845431
    Abstract: A Hall sensor has a Hall sensor element, having multiple connection locations and a current supply source or voltage supply source, which has a first and a second supply connector for output of a supply current or a supply voltage. The first supply connector is connected or can be connected with a first connection location to feed a current into the Hall sensor element, and the second supply connector is connected or can be connected with a second connection location of the Hall sensor element. The Hall sensor has a NAND gate, which is connected with the first connection location of the Hall sensor element using a first input, and with the second connection location of the Hall sensor element using a second input, and has an output for output of a first error signal.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: November 24, 2020
    Assignee: TDK-Micronas GmbH
    Inventors: Marc Baumann, David Muthers, Thomas Desel
  • Publication number: 20200365796
    Abstract: A Hall sensor structure comprising a semiconductor body of a first conductivity type, a well region of a second conductivity type extending from a top side of the semiconductor body into the semiconductor body, at least three first semiconductor contact regions of the second conductivity type, each extending from a top side of the well region into the well region, at least one second semiconductor contact region of a second conductivity type, wherein the first semiconductor contact regions are spaced apart from one another and from an edge of the well region, a metallic connection contact layer is arranged on each first semiconductor contact region, the at least one second semiconductor contact region extends along the top side of the semiconductor body at least partially around the well region.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 19, 2020
    Applicant: TDK-Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Reinhard ERWE, Martin CORNILS, Kerwin KHU
  • Patent number: 10816611
    Abstract: A measuring system having a magnetic device for generating a magnetic field and at least one magnetic field sensor for detecting a flux density of the magnetic field, at least in a first spatial direction. The magnetic device has a top side facing the magnetic field sensor, the magnetic field sensor is spaced apart from the top side of the magnetic device, the magnetic device has a main magnet, having two poles, with a main magnetizing direction for generating a main magnetic field and at least one secondary magnet, having two poles, with a secondary magnetization direction for generating a secondary magnetic field, the main magnet has larger dimensions than the at least one secondary magnet, the magnetic field is formed by superposition of the main magnetic field and the secondary magnetic field, the secondary magnetic field at least partially compensates the main magnetic field in the first spatial direction.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: October 27, 2020
    Assignee: TDK-Micronas GmbH
    Inventors: Timo Kaufmann, Joerg Franke
  • Publication number: 20200256931
    Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.
    Type: Application
    Filed: January 14, 2020
    Publication date: August 13, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Martin CORNILS, Maria-Cristina VECCHI
  • Publication number: 20200227627
    Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 16, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Martin CORNILS, Maria-Cristina VECCHI
  • Patent number: 10693057
    Abstract: A component is provided comprising at least one substrate, at least one magnetic field sensor and at least one trench in the at least one substrate surrounds the at least one magnetic field sensor at least partially. At least one cap covers the at least one trench and the at least one magnetic field sensor, and at least one layer element arranged between the at least one cap and the at least one substrate.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: June 23, 2020
    Assignee: TDK-MICRONAS GMBH
    Inventors: Marc Baumann, Thilo Rubehn, Christian Joos, Jochen Stephan
  • Patent number: 10684158
    Abstract: A system for monitoring a state, for example a filling state of a container, with a first sensor which in operation produces a measured value, and a second sensor which in operation produces a second, discrete measured value. The first measured value and the second measured value are forwarded to an evaluation unit via a common line.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: June 16, 2020
    Assignee: TDK-Micronas GmbH
    Inventors: Philip Herbst, Hans-Joerg Fink
  • Publication number: 20200166588
    Abstract: A semiconductor sensor structure that includes a first and a second semiconductor wafer. The second semiconductor wafer has a substrate with integrated circuit with at least one metallic terminal contact, and the first semiconductor wafer has a semiconductor layer of a second conductivity type with a three-dimensional Hall sensor structure with a sensor region and at least three first metallic terminal contacts that are spaced apart from one another are formed on a front, and at least three second metallic terminal contacts that are spaced apart from one another are formed on a back. The terminal contacts are each formed on a highly doped semiconductor contact region of a second conductivity type and are arranged at an offset from the second terminal contacts in a projection perpendicular to the front.
    Type: Application
    Filed: November 26, 2019
    Publication date: May 28, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Martin CORNILS, Maria-Cristina VECCHI
  • Publication number: 20200161537
    Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 21, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Christian SANDER, Martin CORNILS
  • Patent number: 10605625
    Abstract: A measuring system for determining the position of a transducer along a z-direction, having a semiconductor body having a surface, a back surface, at least one connection contact and at least one magnetic field sensor which is sensitive in the z-direction, a carrier having a front side, rear side and electrically conductive regions, a magnet for producing a magnetic field, having a first magnetic pole formed along a first surface and an axis of symmetry extending perpendicular to the first surface, wherein between at least one connection contact of the semiconductor body and at least one conductor track of the carrier, there is an electrical operative connection, the first surface of the magnet being arranged parallel to the z-direction and the axis of symmetry of the magnet being arranged perpendicular to the z-direction, the transducer having an end face facing the magnetic field sensor.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: March 31, 2020
    Assignee: TDK-Micronas GmbH
    Inventors: Joerg Franke, Timo Kaufmann
  • Patent number: 10605872
    Abstract: A calibration method for a Hall sensor having a Hall sensitive layer with four electrical contacts and a first field plate, wherein, at a first temperature and at a first magnetic flux density, a resistance value of the Hall sensitive layer is determined for each of at least three different field plate voltages present at the field plate, a calibration curve is produced from the at least three resistance values, a deviation value of the calibration curve is determined from a reference calibration curve, and the field plate voltage that is present at the first field plate or an operating voltage that is present at the sensitive layer is readjusted by a correction value corresponding to the deviation value.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: March 31, 2020
    Assignee: TDK-Micronas GmbH
    Inventors: Timo Kaufmann, Joerg Franke