Patents Assigned to Technologies AG
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Patent number: 11668383Abstract: A strain wave gear, in particular for an electromechanical camshaft adjuster, comprises a housing element, an internally toothed drive element connected thereto in a rotationally fixed manner, an elastic, externally toothed gear element, and an internally toothed output element. The drive element has positive locking elements with which it is connected to the housing element.Type: GrantFiled: June 7, 2019Date of Patent: June 6, 2023Assignee: Schaeffler Technologies AG & Co. KGInventors: Marco Hildebrand, Rainer Ottersbach, Daniel Heise
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Patent number: 11667183Abstract: A drive system for a hybrid motor vehicle with a motor shaft rotationally coupled to the output shaft of an internal combustion engine, a first and second electric motors with respective first and second rotor shafts arranged in a radially offset manner to each other, a drive part rotationally connected to the second rotor shaft and which can be rotationally connected to at least one wheel, and a transmission unit operatively installed between the motor shaft, the two rotor shafts, and the drive part. A shift device controls the shift position of the transmission unit such that the shift device rotationally connects the motor shaft to the first rotor shaft while the second rotor shaft is decoupled in a first shift position, the shift device rotationally connects the motor shaft both to the first and second rotor shafts in a second shift position, and the shift device rotationally connects the two rotor shafts together while the motor shaft is decoupled in a third shift position.Type: GrantFiled: February 25, 2020Date of Patent: June 6, 2023Assignee: Schaeffler Technologies AG & Co. KGInventors: Marcus Hoppe, Torsten Pieper
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Patent number: 11668924Abstract: An oscillator control system includes an non-linear oscillator structure configured to oscillate about an axis; a driver circuit configured to generate a driving signal to drive the oscillator structure; a detection circuit configured to measure an angle amplitude and a phase error of the oscillator structure; an amplitude controller configured to generate a reference oscillator period based on the measured angle amplitude; a period and phase controller configured to receive the reference oscillator period and the measured phase error from the detection circuit, generate at least one control parameter of the driving signal based on the reference oscillator period and the measured phase error, and determine a driving period of the driving signal based on the reference oscillator period and the measured phase error. The driver circuit is configured to generate the driving signal based on the at least one control parameter and the driving period.Type: GrantFiled: January 22, 2020Date of Patent: June 6, 2023Assignee: Infineon Technologies AGInventors: David Brunner, Franz Michael Darrer, Georg Schitter
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Patent number: 11670429Abstract: A method for calculating a PCI margin associated with a loading pattern of a nuclear reactor including a core into which fuel assemblies are loaded according to the loading pattern is implemented by an electronic system. The fuel assemblies include fuel rods each including fuel pellets of nuclear fuel and a cladding surrounding the pellets. This method includes calculating a reference principal PCI margin for a reference loading pattern of the fuel assemblies in the core; calculating a reference secondary PCI margin for the reference pattern; calculating a modified secondary PCI margin for a modified loading pattern of the fuel assemblies in the core, and calculating a modified principal PCI margin for the modified pattern, depending on a comparison of the modified secondary PCI margin with the reference secondary PCI margin.Type: GrantFiled: March 17, 2022Date of Patent: June 6, 2023Assignee: Schaeffler Technologies AG & Co. KGInventors: Gilles Andre Poyaud, Isabelle Galland
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Patent number: 11668693Abstract: A loading station for forming a fiber mass for micronaire testing. The loading station has a hopper for receiving an unformed fiber mass. A forming chamber receives the unformed fiber mass from the hopper. The forming chamber includes a non-movable back wall and a non-movable bottom plate with ports formed therein. The ports draw an airflow from the hopper into the forming chamber. A selectively movable isolation plate isolates the forming chamber from the hopper, and a selectively movable horizontal forming wall horizontally compacts the fiber mass into a desired horizontal cross-section. A selectively movable vertical forming wall vertically compacts the fiber mass into a desired vertical cross-section. A selectively movable plunger presses axially along the shaped fiber mass.Type: GrantFiled: August 26, 2019Date of Patent: June 6, 2023Assignee: Uster Technologies AGInventor: James T. Wender
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Patent number: 11668796Abstract: A method is proposed for determining at least one calibration parameter for a radar system having a first radar transceiver and a second radar transceiver. The method includes performing a first calibration measurement and a second calibration measurement. The first calibration measurement and the second calibration measurement both include generating a first frequency-modulated oscillation signal and a second frequency-modulated oscillation signal, and combining the first oscillation signal received via the second terminal with the second oscillation signal, in order to generate a first difference signal for the first calibration measurement and a second difference signal for the second calibration measurement, both having a frequency difference between the first oscillation signal and the second oscillation signal.Type: GrantFiled: November 17, 2020Date of Patent: June 6, 2023Assignee: Infineon Technologies AGInventors: Philipp Scherz, Markus Josef Lang, Roland Vuketich
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Patent number: 11668829Abstract: Distance ambiguities arising from indirect time-of-flight (ToF) measurements are resolved by using additional information from two or more coded-modulation measurements. An indirect ToF measurement is performed for a pixel of an image processor, to obtain a value indicative of an apparent distance to an imaged object or scene. First and second coded-modulation measurements are also performed, using respective combination of modulation code and reference signals, such that correlation peaks corresponding to these measurements overlap and cover respective first and second adjoining ranges of distances to imaged objects. First and second mask values are determined from the correlation values obtained from the coded-modulation measurements and are used to determine whether the value indicating the apparent distance indicates an actual distance within the first range of distances or within the second range of distances.Type: GrantFiled: March 18, 2019Date of Patent: June 6, 2023Assignee: Infineon Technologies AGInventors: Armin Schoenlieb, Hannes Plank
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Publication number: 20230170319Abstract: A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip and the second semiconductor chip are arranged such that the first face of the first semiconductor chip faces in a first direction and the first face of the second semiconductor chip faces in a second direction opposite to the first direction. The first semiconductor chip is located laterally outside of an outline of the second semiconductor chip.Type: ApplicationFiled: January 30, 2023Publication date: June 1, 2023Applicant: Infineon Technologies AGInventors: Petteri Palm, Thorsten Scharf
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Patent number: 11662443Abstract: A method for determining malfunction is provided. The method includes receiving a 1D or 2D luminance image of a scene from a time-of-flight based 3D-camera. The luminance image includes one or more pixels representing intensities of background light received by an image sensor of the 3D-camera. The method further includes receiving a 2D optical image of the scene from an optical 2D-camera and comparing the luminance image to the optical image. If the luminance image does not match the optical image, the method additionally includes determining malfunction of one of the 3D-camera and the 2D-camera.Type: GrantFiled: June 24, 2020Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventors: Franz Michael Darrer, Martin Graefling, Boris Kirillov, Stefan Mendel, Christoph Steiner
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Patent number: 11661979Abstract: A dog clutch with ratcheting one-way clutch includes an axis, a dog clutch ring, a first ring, a second ring, and a plurality of rockers. The dog clutch ring has a plurality of first teeth. The first ring includes a plurality of second teeth, complementary to the first teeth, a first spline for receiving a first shaft, and a plurality of first pockets. The second ring includes a plurality of third teeth, complementary to the first teeth, a second spline for receiving a second shaft, and a plurality of second pockets. The plurality of rockers is disposed in a one of the plurality of first pockets or the plurality of second pockets for selectively engaging with the other one of the plurality of first pockets or the plurality of second pockets to prevent rotation of the first ring relative to the second ring in only one rotational direction.Type: GrantFiled: June 9, 2021Date of Patent: May 30, 2023Assignee: Schaeffler Technologies AG & Co. KGInventors: Jordan Geiser, Carsten Behler
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Patent number: 11662756Abstract: An integrated circuit includes a first bandgap voltage reference sub-circuit configured to provide a first bandgap reference voltage; a second bandgap voltage reference sub-circuit configured to provide a second bandgap reference voltage; a voltage regulator sub-circuit configured to derive a first supply voltage using the first bandgap reference voltage and a second supply voltage using the second bandgap reference voltage; a bandgap comparator sub-circuit configured to derive a first internal voltage and a second internal voltage from the first supply voltage, wherein the first internal voltage decreases at a higher rate than the second internal voltage with respect to a decreasing first supply voltage, wherein the bandgap comparator sub-circuit is configured indicate which of the first and the second internal voltages is larger; and a comparator sub-circuit configured to indicate whether a difference between the first supply voltage and the second supply voltage is larger than a predefined threshold.Type: GrantFiled: May 3, 2021Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventors: Mario Motz, Umberto Aracri, Alessandro Michelutti
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Patent number: 11662570Abstract: A microelectromechanical system (MEMS) device including an oscillator structure configured to oscillate about a rotation axis; a frame that is rotationally fixed, the frame including a frame recess within which the oscillator structure is suspended; and a suspension assembly mechanically coupled to and between the oscillator structure and the frame, the suspension assembly configured to suspend the oscillator structure within the frame recess. The suspension assembly includes a central support beam that extends lengthwise along the rotation axis, the central support beam being mechanically coupled to and between the oscillator structure and the frame; a first outer support beam mechanically coupled to the oscillator structure and laterally displaced from the central support beam in a first direction orthogonal to the rotation axis; and at least one first interior support beam directly coupled to and between the central support beam and the first outer support beam.Type: GrantFiled: June 17, 2020Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventor: Malika Bella
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Patent number: 11664416Abstract: A semiconductor device includes a semiconductor body having a first surface. A first trench extends in a vertical direction into the semiconductor body. The semiconductor device also includes a first interlayer in the first trench and a first dopant source in the first trench. The first interlayer is arranged between the first dopant source and the semiconductor body, and the first dopant source includes a first dopant species. The semiconductor device also includes a semiconductor area doped with the first dopant species and which completely surrounds the first trench at least at a depth in the semiconductor body and adjoins the first trench.Type: GrantFiled: September 12, 2019Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventor: Markus Zundel
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Patent number: 11662232Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.Type: GrantFiled: May 4, 2022Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventors: Volker Strutz, Rainer Markus Schaller
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Patent number: 11663118Abstract: In some examples, a device includes a set of data storage elements, wherein each data storage element of the set of data storage elements is associated with a respective valid address vector, and wherein a bit flip in any bit of any of the valid address vectors leads to one of a set of invalid address vectors not associated with any of the set of data storage elements. The device also includes a decoder configured to receive a first address vector as part of a request and to check whether the first address vector corresponds to one of the valid address vectors or to one of the invalid address vectors. The decoder is also configured to select an associated data storage element in response to receiving the request and in response to determining that the first address vector corresponds to one of the valid address vectors.Type: GrantFiled: March 10, 2021Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventor: Jens Barrenscheen
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Patent number: 11662430Abstract: In an embodiment, a method for testing a millimeter-wave radar module includes: providing power to the millimeter-wave radar module; performing a plurality of tests indicative of a performance level of the millimeter-wave radar module; comparing respective results from the plurality of tests with corresponding test limits; and generating a flag when a result from a test of the plurality of test is outside the corresponding test limits, where performing the plurality of tests includes: transmitting a signal with a transmitting antenna coupled to a millimeter-wave radar sensor, modulating the transmitted signal with a test signal, and capturing first data from a first receiving antenna using an analog-to-digital converter of the millimeter-wave radar sensor, where generating the flag includes generating the flag based on the captured first data.Type: GrantFiled: March 17, 2021Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventors: Reinhard-Wolfgang Jungmaier, Saverio Trotta, Dennis Noppeney
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Patent number: 11660014Abstract: The present disclosure relates to a computed tomography apparatus, comprising: a first semiconductor device with a first radar transceiver IC, a second semiconductor device with a second radar transceiver IC, and at least one third semiconductor device with a third radar transceiver IC, which are arranged at different positions around a tomographical measurement region; a synchronization circuit, which is designed to provide a synchronization signal in order to operate the first, second and third radar transceiver IC as synchronized transmitters and receivers using the synchronization signal; and an evaluation circuit, which is designed to ascertain at least one characteristic of a medium located in the measurement region based on time-of-flight measurements of radar signals received from at least two receivers.Type: GrantFiled: April 15, 2020Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventors: Jochen O. Schrattenecker, Andreas Och, Stefan Schuster
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Patent number: 11664811Abstract: A system for driving a microelectromechanical system (MEMS) oscillating structure includes a phase error detector configured to generate a phase error signal based on measured event times and expected event times of the MEMS oscillating structure oscillating about a rotation axis; a disturbance event detector configured to detect a disturbance event based on the phase error signal and a disturbance threshold value; and a phase frequency detector (PFD) and correction circuit configured to, in response to the detected disturbance event, monitor for a plurality of measured crossing events of the MEMS oscillating structure oscillating about the rotation axis, generate a first compensation signal based on at least a first measured crossing event and a second measured crossing event to correct a frequency of the MEMS oscillating structure, and generate a second compensation signal based on a third measured crossing event to correct a phase of the MEMS oscillating structure.Type: GrantFiled: August 18, 2020Date of Patent: May 30, 2023Assignee: Infineon Technologies AGInventors: Philipp Stelzer, Norbert Druml, Christian Steger, Andreas Strasser
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Patent number: D987793Type: GrantFiled: August 23, 2021Date of Patent: May 30, 2023Assignee: Leister Technologies AGInventors: Patrick Plank, Adam Warkiewicz
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Patent number: RE49546Abstract: A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the semiconductor body towards the second surface is formed. A gate electrode and a gate dielectric are formed in the gate trench. The gate dielectric electrically insulates the gate electrode from adjacent semiconductor material. A doped superjunction region vertically extending from a bottom of the gate trench towards the second surface of the semiconductor body is formed. The doped superjunction region includes first, second, and third doped pillars vertically extending from the first surface of the first semiconductor layer and directly adjoining one another. The second pillar is laterally centered between the first and third pillars and has an opposite conductivity type as the first and third pillars.Type: GrantFiled: November 6, 2020Date of Patent: June 6, 2023Assignee: Infineon Technologies AGInventors: Alice Pei-Shan Hsieh, Hans-Joachim Schulze