Abstract: A power semiconductor module includes: at least one semiconductor substrate having a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer; at least one semiconductor body arranged on the first metallization layer; at least one end stop element arranged either on the semiconductor substrate or on one of the at least one semiconductor body and extending from the semiconductor substrate or the respective semiconductor body in a vertical direction that is perpendicular to a top surface of the semiconductor substrate; and a housing at least partly enclosing the semiconductor substrate, the housing including sidewalls and a cover. The housing further includes at least one press-on pin extending from the cover of the housing towards one of the at least one end stop element, and exerting a pressure on the respective end stop element.

Abstract: A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.

Abstract: A torque limiter for a drive train includes a rotational axis extending in an axial direction, a drive side, an output side, a first friction surface on a one of the drive side or the output side, a second friction surface on the other of the drive side or the output side, and a friction lining. The friction lining has a first material with a first friction coefficient facing the first friction surface and a second material with a second friction coefficient, different from the first friction coefficient, facing the second friction surface. The friction lining is under a preload acting in the axial direction, torque-transmissively connects the output side to the drive side until a limit torque is reached, and is arranged to slip on the first friction surface when the limit torque is exceeded.

Abstract: A transportation system for semiconductor module base plates includes a plurality of spacer elements. Each spacer element includes a distance holding element, a first pin on a first side of the distance holding element, and a second pin on a second side of the distance holding element. Each spacer element is configured to be arranged between two of a plurality of semiconductor module base plates. Each of the first pin and the second pin is configured to engage with a corresponding counterpart of one of the semiconductor module base plates when the corresponding spacer element is arranged between two of the semiconductor module base plates.

Abstract: A method comprises determining a first pressure increase in an electrochemical energy storage unit based on a first repetition rate, detecting that the first pressure increase has exceeded a first threshold value, determining a second pressure increase in the energy storage unit based on a second repetition rate, the second repetition rate being greater than the first repetition rate, detecting that the second pressure increase exceeds a second threshold value, and outputting a signal to a control unit based on detecting that the second pressure increase has exceeded the second threshold value.

Abstract: A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

Abstract: An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.

Abstract: A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.

Abstract: A radar monolithic microwave integrated circuit (MMIC) includes a first transmission channel configured to output a first continuous-wave transmit signal based on a local oscillator signal having a first frequency; a first phase shifter provided on the first transmission channel and configured to apply a first phase setting to the first continuous-wave transmit signal to generate a first transmit signal having the first frequency; a first transmit monitoring signal path configured to couple out a portion of the first transmit signal from the first transmission channel as a first transmit monitoring signal; a frequency multiplier configured to receive a test signal and convert it into a multiplied test signal having a second frequency, where the first and the second frequencies are separated by a frequency offset; and a down-conversion mixer configured to mix the multiplied test signal and the first transmit monitoring signal to generate a first mixer output signal.

Abstract: A phasing mechanism for an internal combustion is provided. The phasing mechanism includes a stator, a rotor configured to rotate relative to the stator, a first plurality of rolling elements configured to engage and move the rotor in a first rotational direction, a second plurality of rolling elements configured to engage and move the rotor in a second rotational direction, and a piston configured to be hydraulically actuated in: i) a first axial direction to move the rotor in the first rotational direction, and ii) a second axial direction to move the rotor in the second rotational direction.

Abstract: A MicroElectroMechanical System (MEMS) includes a MEMS device; a feature extraction component coupled to an output of the MEMS device, wherein the feature extraction component is configured to provide a plurality of features of an output signal of the MEMS device; and a low data rate interface coupled to the feature extraction components, wherein the low data rate interface is configured to transmit the plurality of features of the output signal of the MEMS device, and wherein a low data rate of the low data rate interface is determined by a number of the plurality of features transmitted, wherein the MEMS device, the feature extraction component, and the low data rate interface are packaged together in a semiconductor package.

Abstract: An apparatus, for determining a relative direction of a movement of an encoder object depending on a magnetic field which is generated or influenced by the encoder object. A magnetic field sensor generates two sensor signals based on the magnetic field, that indicate a profile of the magnetic field in the event of a relative movement between the encoder object and the magnetic field sensor, that fluctuate around a mean value and are phase-shifted 90° to one another. The processing circuit calculates an angle based on the two sensor signals, and determines the relative direction of the movement of the encoder object based on a gradient of the angle between a switch-on time of the apparatus and a threshold value angle which is reached thereafter or based on a gradient of the angle between the situation of two successive threshold value angles being reached.

Abstract: A sigma delta (SD) pulse-width modulation (PWM) loop includes a loop filter implementing a linear transfer function to generate a loop filter signal, wherein the loop filter is configured to receive an input signal and a first feedback signal and generate the loop filter signal based on the input signal, the first feedback signal, and the linear transfer function; and a hysteresis comparator coupled to an output of the loop filter, the hysteresis comparator configured to receive the loop filter signal and generate a sigma delta PWM signal based on the loop filter signal, wherein the first feedback signal is derived from the sigma delta PWM signal.

Abstract: A drive unit has a first electric rotary machine and a second electric rotary machine as well as a first shaft and a second shaft. The first electric rotary machine is arranged at least partly radially and axially within an area radially delimited by the second electric rotary machine, and the stator of the first electric rotary machine and the stator of the second electric rotary machine are mechanically fixed to each other. The drive unit comprises a coolant supply device which is arranged adjacently to the stators in the axial direction and by means of which coolant can be supplied axially between and/or into the stators.

Abstract: A method of forming a planetary carrier assembly is disclosed herein. In one aspect, the method includes providing a first carrier plate and a second carrier plate. The first carrier plate has a first body portion, and the second carrier plate has a second body portion including a plurality of legs. The method includes forming at least one staking element on an axial end of at least one of the plurality of legs. The method includes fixing the first carrier plate and the second carrier plate to each other via application of an axial load such that the at least one staking element on the at least one of the plurality of legs digs into the first carrier plate.

Abstract: A drive unit has a first electric rotary machine and a second electric rotary machine as well as a first shaft and a second shaft. A rotor of the first electric rotary machine is rotationally fixed to the first shaft, and a rotor of the second electric rotary machine is rotationally fixed to the second shaft. The drive unit additionally has a separating clutch. One of the two electric rotary machines is arranged at least partly radially and axially within an area radially delimited by the respective other electric rotary machine.

Abstract: The invention relates to a sliver receiving device for supplying a sliver coming from a drafting system to a yarn-forming element of a spinning device, an air jet spinning device and a method for forming a sliver receiving device for supplying a sliver coming from a drafting device to a yarn-forming element of a spinning device. The sliver receiving device according to the invention comprises a main body having an inlet opening for receiving the sliver supplied from the drafting system, and a sliver guide device arranged behind the inlet opening for the defined supplying of the sliver to the yarn-forming element.

Abstract: A wheel sensor arrangement can include a first wheel speed sensor and a second wheel speed sensor. The first wheel speed sensor can include or be implemented with a first semiconductor die and can provide data regarding a speed of a rotating wheel. The second wheel speed sensor can also include or be implemented with a second semiconductor die and can provide data regarding the speed of the rotating wheel. The second semiconductor die can be galvanically isolated from the first semiconductor die. The wheel sensor arrangement can include a mold housing that forms around the first wheel speed sensor and the second wheel speed sensor. The mold housing can include a separation feature between the first sensor and the second sensor.

Abstract: A current sensor comprises a magnetic field sensor and a T-shaped ferromagnetic structure having an air gap. The current sensor is arranged in a recess of a busbar.

Abstract: An assembly includes at least three strain gauges and is attached to an elastic transmission element of a strain wave gearing. The assembly is designed to measure a torque acting on the elastic transmission element. Output signals from each of the strain gauges are measured. The output signal of one of the strain gauges is predicted from the measured output signals of the other strain gauges. An error message is output based on the predicted output signal deviating from the respective measured output signal by more than a predetermined tolerance.