Abstract: A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region.

Abstract: One embodiment of the invention relates to a dynamically adjustable differential band-pass filter. This band-pass filter includes a first leg that has an input portion and an output portion with a first inductor therebetween. It also includes a second leg in parallel with the first leg, where the second leg has an input portion and an output portion with a second inductor therebetween. The first inductor is symmetrically inter-woven with the second inductor. In some embodiments, the band pass filter is configured to compensate for losses due to the inductors. Other band-pass filters and methods are also disclosed.

Abstract: Embodiments of the invention relate to a method and a corresponding circuit for digitizing an analog signal. Applying a nonlinear function to the signal, digitizing the signal and applying the inverse of the nonlinear function to the digital samples improve the digital samples.

Abstract: A circuit arrangement and signal processing device are disclosed. In one embodiment, the circuit arrangement includes a resonator circuit for generating an output signal from an input signal with a capacitance and with an inductance, with an input at which the input signal can be provided, and with an output at which the output signal can be provided. A control circuit is provided for open-loop or closed-loop control of a quality factor of the resonator circuit, the control circuit being configured to control the quality factor of the resonator circuit in an open-loop manner or in a closed-loop manner depending on a signal profile of the signal amplitude of the input signal and/or of the output signal.

Abstract: In a method for manufacturing a layer arrangement, a plurality of electrically conductive structures are embedded in a substrate. Material of the substrate is removed at least between adjacent electrically conductive structures. An interlayer is formed on at least one portion of sidewalls of each of the electrically conductive structures. A first layer is formed on the interlayer where an upper partial region of the interlayer remaining free of a covering with the first layer. An electrically insulating second layer is formed selectively on that partial region of the interlayer which is free of the first layer, in such a way that the electrically insulating second layer bridges adjacent electrically conductive structures such that air gaps are formed between adjacent electrically conductive structures.

Abstract: A device for scaling and quantization of digital soft output values (sk) from an equalizer has a control loop for controlling a statistical parameter (?) for the scaled and quantized soft output values (sD,k), which contains a calculation unit (4) for calculation of the statistical parameter (?), and a control unit (5) for calculation of a scaling factor (c) for scaling the soft output values (sk) from the equalizer on the basis of the statistical parameter (?).

Abstract: A resin cast transformer having a core covered by a cushioning material is provided. The cushioning material is in contact with the core and includes a force absorption layer adjoining a force distribution layer. The force distribution layer is harder than the force absorption layer.

Abstract: A method is provided for handover of a communication of a mobile communication device between a first radio access network and a second radio access network. The method comprises storing, by at least one of the communication device and an element of the first radio access network, a context of the communication device in the first radio access network, the context being useable to transfer the communication back to the first radio access network after a transferring to the second radio access network; and transferring the communication to the second radio access network.

Abstract: A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.

Abstract: A power semiconductor component is disclosed. One embodiment provides a semiconductor body, in which at least two vertical power semiconductor components are arranged. Each of the vertical power semiconductor components has a first load terminal arranged at a front side of the semiconductor body. Each of the vertical power semiconductor components has a second load terminal arranged at a rear side of the semiconductor body opposite the front side.

Abstract: This disclosure relates to delay cells in a ring oscillator that include sub-cells having a gain that is a function of a variable control signal and sub-cells with a gain that is set by a fixed control signal.

Abstract: In accordance with an aspect of the application, there is provided a system for testing, including a first chip, a second chip, and first and second connections. The first connection is configured to couple a first pin of the first chip to a first pin of the second chip, and to transmit an initial signal from the first chip to the second chip. The second connection is configured to couple a second pin of the first chip to a second pin of the second chip to return the signal as a returned signal to the first chip.

Abstract: A controlled-punch-through semiconductor device with a four-layer structure is disclosed which includes layers of different conductivity types, a collector on a collector side, and an emitter on an emitter side which lies opposite the collector side. The semiconductor device can be produced by a method performed in the following order: producing layers on the emitter side of wafer of a first conductivity type; thinning the wafer on a second side; applying particles of the first conductivity type to the wafer on the collector side for forming a first buffer layer having a first peak doping concentration in a first depth, which is higher than doping of the wafer; applying particles of a second conductivity type to the wafer on the second side for forming a collector layer on the collector side; and forming a collector metallization on the second side.

Abstract: An exemplary method is disclosed for manufacturing a power semiconductor device which has a first electrical contact on a first main side and a second electrical contact on a second main side opposite the first main side and at least a two-layer structure with layers of different conductivity types, and includes providing an n-doped wafer and creating a surface layer of palladium particles on the first main side. The wafer is irradiated on the first main side with ions. Afterwards, the palladium particles are diffused into the wafer at a temperature of not more than 750° C., by which diffusion a first p-doped layer is created. Then, the first and second electrical contacts are created. At least the irradiation with ions is performed through a mask.

Abstract: The present invention relates to moisture-curing compositions that comprise, in addition to a first type of polymer having a specific end group, at least one additional type of polymer having a different specific end group. It has been shown that such compositions have a surprisingly quick adhesive formation and a low amount of seepage.

Abstract: A high-voltage device includes a conducting element for conducting a high-voltage current and at least one transient reducing unit for reducing voltage peaks of existing propagating very fast transients (VFTs) by the generation of arcing. The transient reducing unit has at least one arcing occurrence surface. The at least one arcing occurrence surface of the at least one transient reducing unit is positioned in the vicinity of the conducting element such that arcing occurs between the transient reducing unit and the conducting element when the potential difference between the transient reducing unit and the transient conducting element is above a threshold value, such as at the occurrence of a very fast transient. A method is also provided for equipping a high-voltage device with the transient reducing unit.

Abstract: The present disclosure relates to the heating of memory cells.

Abstract: This disclosure relates to phase locked loop based frequency tuning of an adjustable filter.

Abstract: A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.

Abstract: Frequency pattern generator (1, 101, 201) for generating frequency pulses, said generator having a first local oscillator unit (2-1, 121, 221) for generating a first radio frequency carrier frequency signal (LO1), at least one second local oscillator unit (2-2, . . . 2-N, 122, 222) for generating at least one second radio frequency carrier frequency signal (LO2), a switching device (3, 103, 203) for passing on one of the radio frequency carrier frequency signals (LO1, LO2) or a zero signal (DC) in a manner dependent on a control signal (CTR), and a mixing stage (9, 109, 209, 212, 309) for mixing the signal (LO) that has been passed on by the switching device (3, 103, 203) with a mixing frequency signal (LF) to form a pulsed output signal (RFOUT), the pulsed output signal (RFOUT) having frequency pulses at a respective frequency (f1, . . . f8) and length (Tp) in a manner dependent on the control signal (CTR).