Abstract: This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.

Abstract: This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.

Abstract: An improved apparatus and method which offers an integral pre-strip rinse operation between etching operation and stripping operation. The present invention is designed to allow a semiconductor wafer to undergo sequential processing of dry etching, wet pre-strip rinsing, dry photoresist stripping, and wet final rinsing in a single system.

Abstract: In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.

Abstract: A mass flow stabilizer utilizes a restriction and a chamber for the dampening of pressure fluctuations between a gas pressure regulator and a mass flow controller.

Abstract: In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.

Abstract: A tapered profile is obtained in oxide etched in a plasma glow discharge by switching the RF power between the side and lower electrodes in a tri-electrode reactor. The etch is isotropic while the RF power is applied to the side electrode and is anisotropic when the RF power is applied to the lower electrode.

Abstract: A high frequency, high voltage is capacitively applied to a process gas through a quartz tube to ignite a glow discharge within the tube. The quartz tube runs through a microwave cavity and the ignitor is positioned upstream of the cavity. The cavity is tuned for a steady state glow discharge and is not changed during initiation of the plasma. The ignitor excites the process gas into active species and the gas flow takes the species through the cavity where the microwave energy brings the gas to an ionized state and the plasma is sustained.

Abstract: In apparatus for transporting semiconductor wafers, a spatula contains a single major recess for receiving a wafer. Adjacent one edge of the recess is a shoulder for locating the wafer in the sequence of operations for loading the spatula. As a result of the sequence, the center of the wafer is held at a predetermined, known location.

Abstract: Improved handling of multi-wafer cassettes in automated wafer processing machines is accomplished by means of an improved cassette elevator. The design of the cassette elevator is such that the receiver/sender portion of the wafer processing machine can be easily configured to accommodate single or multiple cassette elevators served by a single wafer loading spatula without increasing the width of the receiver/sender units. In addition, an automatic tilt feature of the cassette elevator substantially reduces the likelihood of wafer breakage during the cassette loading and unloading operation.

Abstract: An improved method is disclosed for obtaining relatively deep (6 microns) trenches in single crystal silicon wafers. The method comprises exposing the wafer to a plasma formed in a gas mixture comprising Freon 11 (CCl.sub.3 F), sulphur hexafluoride (SF.sub.6) and either helium or argon. The etch takes place at a pressure of 1-3 torr (133-400 Pa) in a narrow gap (6 mm.) planar plasma reactor.

Abstract: Automated article processing, particularly semiconductor wafer processing, is accomplished in a modular article processing machine. The design of the machine allows easy reconfiguration between single and multiple processing station systems. Articles are handled according to a method which easily accommodates the various configurations of the machine and which provides efficient throughput. The machine includes a number of electromechanical and pneumatic systems under the control of at least one microprocessor. Machine state knowledge necessary for startup in the midst of operation, such as following a power interruption, is provided by a mechanical counter indexed at the completion of each stage of operation by the microprocessor controller.

Abstract: A parallel plate plasma reactor is disclosed in which the lower electrode comprises a metal electrode having a central pedestal and an insert for surrounding the pedestal and holding wafers in contact with the pedestal or in position above the pedestal. The insert can comprise an insulator, such as ceramic, or a metal.

Abstract: An improved pin lift mechanism for plasma processing of semiconductor wafers is disclosed in which the pins are each contained in a non-magnetic tube which is sealed to the wafer chuck. A magnetic slug in each tube couples external motion of a magnet to the pin.

Abstract: A plasma etch process and apparatus is disclosed in which a gas mixture comprises CF.sub.3 Br, xenon or krypton, and oxygen. The plasma reactor includes a sacrificial element, preferably in the form of a graphite ring, on the lower electrode of a parallel plate reactor.

Abstract: A gas inlet having a non-uniform array of inlet holes for the non-uniform introduction of an etching gas into a reaction chamber of a dry etching apparatus. The non-uniform introduction of gas compensates for non-uniform characteristics in the dry etching apparatus resulting in a uniform etch.

Abstract: Patterning a chrome mask with PBS (polybutenesulfone) photoresist is enabled in a plasma reactor by covering the patterned photoresist with a glass layer, planarizing the glass layer, etching the photoresist and then etching the chrome mask. The pattern transferred to the chrome mask is the negative or inverse of the pattern in the photoresist layer.

Abstract: A process for etching polysilicon is provided wherein CFCl.sub.3 (Freon 11) and another gas, typically SF.sub.6, is pre-mixed in a storage chamber before routing to an etching chamber. This process prevents condensation of the Freon 11 in a routing line and resultant failure of a mass flow controller due to liquid ingestion. Furthermore, since the gases are pre-mixed and only one mass flow controller is used, the accuracy of the mixture is not dependent on the precision of the mass flow controller.

Abstract: A multi-wafer load lock apparatus for use in wafer processing machines provides access to wafers in an internal cassette by orthogonal wafer transport devices. A passthrough cassette comprising inwardly extending arms having a stepped portion thereon for holding a wafer enables access from orthogonal directions. An improved vacuum feedthrough actuates the cassette.

Abstract: A wafer clamp is disclosed in which a high voltage capacitor is formed on a semiconductor wafer, which rests on a conductive support. The plates of the capacitor comprise a plurality of concentric rings formed on the surface of the wafer with alternate rings connected together.