Abstract: A housing for installation in motor vehicles to accommodate SMD electronic components disposed on one side of a multi-layer circuit board or film. A metal plate serves as the carrier for the circuit board or film, with the planar expanse of the metal plate being the same as or greater than that of the board or film, with the board or film being disposed on, attached to and electrically insulated from the metal plate. When the area of the metal plate is greater than that of the board or film, power components are disposed on the surface of the metal plate in a region not covered by the board or film, whereas when the area of the metal plate is substantially the same as that of the board or film, power components are disposed on the board or film, with the metal plate serving as a heat sink for the power components.

Abstract: A data transmission system and method in which digitalized information is transmitted via a data transmission link in complete binary words from a transmitter to a receiver. For data transmission, a complete binary word with a defined total bit number is subdivided into one or more partial binary words, with the respective bit numbers of the partial binary words being variable. The individual partial binary words are allocated all binary bit sequences that can be formed with the total number bits of the respective partial binary words, the various bit sequences being coded at respectively different positions within a partial binary word In each partial binary word exactly one binary bit sequence is transmitted from the transmitter to the receiver.

Abstract: A method for thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single-crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400.degree. and 460.degree. C., in the second step the amorphous layer recrystallizes at a temperature between 500.degree. and 600.degree. C., and in the third step the dopants are activated in an RTA process.

Abstract: A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor wherein initially an AuGe layer is formed on the n-type III-V compound semiconductor, with the thickness of the AuGe layer being between 5 and 50 nm and the germanium concentration being less than 1% by weight. An Au layer with a thickness of between 200 and 600 nm is deposited on the AuGe layer. This layer sequence is now either tempered at a temperature of approx. 360.degree.-390.degree. C. for a period between 40 and 180 minutes, or undergoes rapid thermal annealing at a temperature between 430.degree. C. and 480.degree. C. for a period of 5-20 seconds. The metal semiconductor contact manufactured in accordance with the invention is free of inhomogeneities and has predominantly even boundary surfaces.

Abstract: The invention relates to a printed circuit board disposed on a film serving as the carrier material. A connector strip having a large number of connection pins is disposed on the printed circuit board using surface-mounting technology. Connector strips of this type are widespread in digital technology. In the case of circuits in the fields of power electronics or motor vehicle electronics, connector strips cannot be surface-mounted because of the larger cross-sections of the connections. In a printed circuit board of the type mentioned at the outset, recesses are provided in the film stiffener underneath the solder points, such that when the connection pins of the connector strip are soldered, level differences in the connection pins are compensated by the deformation of the carrier film. With this measure, tensions are compensated for the most part by the deformation of the carrier film, so that connector strips for power electronics and motor vehicle electronics applications can also be surface-mounted.

Abstract: An amplifier stage for use with low-resistance AC voltage sources has first and second complimentary transistors, each having a control terminal, a current input terminal and a current output terminal. The transistors are connected together at a first junction point, a current terminal of the second complementary transistor being connected at the first junction point to a corresponding current terminal of the first complimentary transistor. The respective other corresponding current terminals of the transistors are connected to respective opposite poles of a direct current supply, so that the first transistor, the second transistor, and the direct current supply form a series connection providing a common quiescent current to the transistors. The transistors are each provided with a respective separate direct current operating voltage at a respective control terminal.

Abstract: A sensor system for recording the ambient conditions of an optical sensor having a transmitter unit and a receiver unit linked by an optical gap. An electronic sensor unit is provided that predetermines a basic setting of the optical sensor independent of the ambient conditions. The electronic sensor unit contains a signal processing section with comparators for comparing a reception signal of the optical sensor with threshold values corresponding to certain ambient conditions. The electronic sensor unit recognizes and evaluates changes in the ambient conditions as a function of the comparing, and restores the basic setting of the optical sensor such that the sensor system dependably reacts to subsequent changes in the ambient conditions.

Abstract: An electronic ignition system having a control unit to preset the ignition times of the individual cylinders, an ignition coil, and an end stage with a switching transistor (T.sub.1) for exciting the ignition coil. The end stage is provided with a switching unit with which the sparking cycle of the spark plugs is influenced.

Abstract: In stereo receivers with digital decoding pulse generation, interference by the harmonics of the digital switching signal with signals in adjacent channels or with carrier signals in the sideband lead to faults that can be perceived in the audible range as chirping. An integrated stereo decoder with digital decoding pulse generation is described in which the low-harmonic, step-like switching signal consecutively assumes within a period and relative to the amplitude the values (1+.sqroot.2).sup.-1, 1, (1+.sqroot.2).sup.-1, -(1+.sqroot.2).sup.-1, -1, -(1+.sqroot.2).sup.-1, with the .+-.(1+.sqroot.2).sup.-1 values each persisting for an eighth of the period and the .+-.1 values a quarter of the period. Furthermore, an integrated circuit array for generation of this low-harmonic oscillation is described.

Abstract: To make housings used in automotive engineering for holding electronic components suitable for engine compartment installation, complex measures are taken that involve high manufacturing costs. In accordance with the invention, a housing is provided that permits simple production at low cost and affords dependable protection of the electronic systems, in that the electronic components mounted on an electronic carrier are provided with a protective lacquer, and then covered with a flexible and watertight foil as a protection against moisture in such a way that it provides an airtight and watertight seal on an all-round edge formed by a metal plate supporting the electronic carrier. A housing cover forming the housing in conjunction with the metal plate serves as a mechanical protection.

Abstract: In a radio receiver in accordance with the heterodyne principle or with the homodyne principle, two additional transmission channels are provided for interference suppression. The two additional transmission channels have a different degree of distortion. Either mixing with a heterodyne oscillator signal takes place in each of the two transmission channels and the resultant intermediate frequency signals or baseband signals are added in phase opposition to give a sum signal, or the output signals of the two additional transmission channels are added in phase opposition to give a sum signal and the resultant sum signal is mixed with a heterodyne oscillator signal to give an intermediate frequency signal or baseband signal. The signals obtained after addition and mixing and derived from the output signals of the two additional transmission channels are frequency-selected and demodulated, and the demodulated signal is used for gain control.

Abstract: An output stage for an amplifier includes first and second load current-carrying n-p-n output transistors disposed in different respective amplifier branches having different amplification properties. Negative feedback and limiting circuitry provides a negative feedback current to the first one of the output transistors and limits the negative feedback current to a preselected maximum value over a predetermined output current range whereby the amplification properties of the first one of the output transistors are affected in a range of output voltages of the amplifier stage.

Abstract: Described is a luminescent semiconductor element having the following structure: a first thick connecting semiconductor layer of uniform material composition, a thin over-graded layer arranged on the first semiconductor layer and comprising connecting semiconductor material whose composition has a linear gradient, a further connecting semiconductor layer arranged on the over-graded layer and having uniform material composition that determines the wavelength of the radiation emitted by the luminescent semiconductor element, an active layer arranged in the surface area of the further semiconductor layer and having a conductivity opposite to that of the further semiconductor layer in order to form a p-n junction, a rear contact arranged on the first connecting semiconductor layer, and a front contact arranged on the surface of the active layer.

Abstract: The invention relates to a semiconductor arrangement used in particular for the manufacture of infrared-emitting diodes. A first Si-doped GaAlAs layer containing an n-conductivity zone and a p-conductivity zone is deposited onto an n-doped GaAs semiconductor substrate. The Al content decreases continuously over the thickness of the layer. A second GaAlAs layer is deposited on the p-conductivity first zone of the first GaAlAs layer. The Al concentration of the second layer at the barrier surface with the first layer is greater than the Al concentration of the first GaAlAs layer at the barrier surface with the substrate and decreases continuously with the thickness of the second layer. The curve of the Al concentrations in the two epitaxial layers permits a light guiding effect so that the emitted radiation can, unlike conventional GaAlAs diodes, be output preferably onto those sides of the semiconductor array oriented vertically or perpendicularly to the substrate.

Abstract: The object of the patent application is an electronic control unit with triggering and power components, in particular an ignition control unit, whose electronic circuit comprises various assemblies in hybrid technology. To reduce the assembly expenditure and costs for manufacture, while at the same time reducing the volume, the invention provides for the assemblies of the electronic circuit to be integrated in a hybrid circuit and arranged on a single common carrier element. This carrier element is designed as an electrically non-conductive ceramic carrier of Al.sub.2 O.sub.3, by which the electronic circuit of the control unit is electrically insulated from a heat sink.

Abstract: The invention relates to a circuit array for an optical Schmitt trigger in which an optical input signal is converted into an electrical output signal by means of a light-sensitive receiver element, an amplifier stage, a Schmitt trigger stage and an output stage.It is provided in accordance with the invention that the amplifier stage contains a transimpedance amplifier stage, a differential amplifier stage, a first reference network and a compensating element, that the Schmitt trigger stage comprises a differential amplifier stage, a second reference network and a positive-feedback network, and that the output signal is emitted at the circuit output of the output stage.

Abstract: In a circuit array for setting the operating point of a first transistor. A current-inverting circuit (current mirror circuit) has a pinch resistor connected in series with the base-emitter path of another transistor within the current inverting circuit. The current inverting circuit supplies the current-inverting base current of the first transistor.

Abstract: An input circuit and a television tuner for at least two frequency bands. The television tuner has a joint pre-amplifier whose output is connected to two independent, switchable and tunable band-pass filter circuits for the two frequency bands, preferably extending from VHF band I up to and including the hyperband. To achieve a high selection effect with a simple circuit structure and low space requirement, a two-stage switching device is connected to the output of the pre-amplifier, to which device separate inputs of the independent band filters are connected. The input circuit has a pre-circuit filter comprising a frequency-determining capacitor, and a series circuit connected parallel thereto including three frequency-determining coils. The first coil, like the capacitor, is connected at one end to ground and the third coil, like the capacitor, has its output end connected to the pre-amplifier input.

Abstract: A method of manufacture of an integrated MOS semiconductor array for the low-frequency range having MOS components and circuit paths arranged on a semiconductor substrate. Exposed surfaces between the circuit paths are made hydrophobic by germinating with hexamethyl disilazane ((CH.sub.3).sub.3 SiNHSi(CH.sub.3).sub.3), so that the occurrence of leakage currents is avoided. In addition, in an integrated MOS semiconductor array in which the MOS components and the circuit path are covered with a protective layer, the surface of this protective layer is made hydrophobic. As a result, both leakage currents and parasitic capacitances are prevented.

Abstract: The invention relates to a wide-area lamp in which luminescent semiconductor elements in a wide-area spread are connected to one another by a conducting path structure and the individual luminescent semiconductor elements are surrounded by casing elements. The invention provides for the conducting path structure between the individual casing elements to be designed movable such that the lamp can be curved to any shape required. The casing elements are here surrounded by parabolic reflectors, with the conducting path structure with the semiconductor elements being so arranged that one semiconductor element is in the focal point of each reflector.