Abstract: In a semiconductor array having a plastic casing and a cooling portion which is at least partly not embedded in the plastic, an insulating portion is provided which is designed to slide onto the cooling portion and to provide at least partial electrical insulation of the cooling portion when slid on.

Abstract: A television tuner for three different frequency ranges comprises a common antenna connection for three input filter circuits (1, 2, 3). In order to obtain a simple circuit design which involves negligible mutual capacitive loads from the input filter circuits (1, 2, 3), the antenna connection (4) is spatially associated with the input filter circuit (3) for the highest frequency range and is directly connected to one end of a coupling conductor (5). The coupling conductor (5) is series-connected directly with the connection for input filter circuit (1) of the lowest frequency range I and, via a switching diode (11), with the input filter circuit (2) for the medium frequency range II. A further switch (12) detunes the input filter circuit (3) for the highest frequency range III if one of the other input filter circuits (1, 2) is activated.

Abstract: In a radio receiver in which the received signal is converted by mixing into an intermediate frequency signal and/or a baseband signal, and in which an apparatus which generates an intermediate frequency signal and/or baseband signal and derives therefrom a control signal for suppression or reduction of interfering disturbances is provided, disturbance signals in the receiver are temporarily distorted in such a way that interfering disturbances in the receiver are suppressed or reduced.

Abstract: The invention relates to a low-frequency amplifier with an integrated push-pull B final stage and a circuit for adjusting the quiescent current. The invention resides in the amplifier comprising two circuits for adjusting the quiescent current which are provided for different voltage ranges of the supply voltage. An electronic switchover device ensures automatic activation of that circuit for quiescent current adjustment which is suited for the respective voltage range.

Abstract: A heterostructure semiconductor laser diode with a sequence of layers, formed on a substrate, including a laser-active layer arranged between enclosing layers of opposite respectively conductivity types, a cover layer disposed on the side of the sequence of layers facing away from the substrate, and a layer of a conductivity type opposite to that of the substrate arranged between the substrate and the lower enclosing layer and having in the area of the plane of symmetry, a narrow strip produced by diffusion which has the same conductivity type as the substrate and penetrates into the area of the substrate. The current flowing in the forward direction of the semiconductor laser diode is thereby restricted to a narrow strip-shaped area of the laser-active layer.

Abstract: The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein a laser-active zone is arranged between layers of respectively opposite conductivity types, wherein an additional layer having a cover layer disposed thereon, and both of the same conductivity type as the substrate, are formed on the side of the layer sequence facing away from the substrate, and wherein a semiconductor area doped oppositely to the cover layer is produced by diffusion in the cover layer and penetrates, in a strip-shaped zone extending perpendicularly to the exit surface of the laser radiation in the area of the plane of symmetry below a v-groove-shaped recess, the boundary plane between the cover layer and the adjacent additional layer and extends into but not through the layer arranged thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow strip-shaped area of the laser-active layer.

Abstract: The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein the layer sequence includes a laser-active zone arranged between layers of respectively opposite conductivity types, and an additional layer and having a cover layer disposed thereon, and both of the same conductivity type as the substrate, formed on the side of the layer sequence facing away from the substrate, and wherein the cover layer includes an oppositely doped semiconductor area which, in a stripe-shaped surface region extending perpendicularly to the exit surface of the laser radiation in the area of the axis of symmetry, and through a v-groove-shaped recess penetrates, the boundary plane between the cover layer and the adjacent additional layer and extends into the layer located thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow, strip-shaped area of the laser-active zone.

Abstract: At a reference current source with two transistors and a controlled double current source, the base of the second transistor is connected to the collector of the first transistor, the emitter of the first transistor is connected to a reference point, the first terminal of the controlled double current source is connected to the first transistor, and the second terminal of the controlled double current source is connected to the collector of the second transistor. Either a first resistor is inserted between the base and the collector of the first transistor, and the emitter of the second transistor is connected to the reference point or the first resistor is inserted between the emitter of the second transistor and the reference point, and the base and the collector of the first transistor are connected to one another. A resistor is connected between the base of the first transistor and the reference point and/or a resistor is connected between the collector of the second transistor and the reference point.

Abstract: A luminescent semiconductor component has a casing member of a light transmissive plastics material containing particles which simultaneously determine the light scattering and filtering properties of the light which is emitted by the semiconductor component and passes out of the casing member. The casing member may be of epoxy resin, and the particles may be of colored ground filter glass.

Abstract: The invention relates to a process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies, with fission products which are to be withdrawn during the process being formed. The gist of the invention is that the reactivity of certain fission products is increased by plasma excitation or by the supplying of photons. In particular, active hydrogen is made available for entry into a highly volatile, gaseous combination with existing fission products.

Abstract: In a selectable tuner preamplifier with a field-effect transistor tetrode comprised of a compound semiconductor and having the high-frequency input signal fed to one gate electrode and the control signal for controlling the high-frequency input signal fed to the other gate electrode, a component with a diode characteristic is provided for prevention of undesired current flow at the gate electrode controlling the high-frequency input signal when a band is selected and control voltage is applied.

Abstract: In a radio receiver in which the received signal is converted by mixing into an intermediate frequency signal and/or a baseband signal, the degree of distortion of received disturbance signals in the receiver is temporarily changed and a recognition circuit is used which recognizes from the change in the signal gaining demodulation, caused by the change in the degree of distortion, whether the receiver is receiving spurious interference signals falling into the useful channel, and which, in the event of such a disturbance signal reception, initiates a suppression or reduction of the spurious interference signals.

Abstract: A control circuit for tuning a high-frequency input circuit comprises, in addition to a first adjustable component 5 which is directly controlled by a control voltage, further adjustable components 6, 10 which are likewise under the influence of a control voltage UD and UR, respectively. In order to enable individual alignment of the further components in a simple manner, there is fed to the further controllable components 6, 10 via an electronic circuit arrangement 7 one correction voltage each, which supports or weakens the control voltage in its effect and effects the respectively required alignment. The correction voltages are dependent upon the control voltage UD which is fed solely to the first adjustable component 5.

Abstract: The invention relates to a method of controlling several radiation-emitting elements. The invention consists in the compensation of differences in the emission power of the individual elements due to variations in the efficiency of the elements or to differing operating conditions by operating each radiation-emitting element with an individual pulse length determining the overall emission time. In this way, the energy emitted by all elements triggered is substantially identical.

Abstract: The invention relates to a process for the fabrication of a field-effect transistor as described in German Patent Application No. P 35 35 002.4, corresponding to U.S. application Ser. No. 06/914,540 comprises first covering a semiconductor member with a layer which forms the channel region and part of which is covered with a passivation layer. Impurities are implanted into the exposed regions of the semiconductor surface and form underneath the channel region highly doped source and drain regions. A surface layer of the passivation layer is then removed in a section adjacent to the source region and a gate electrode is formed on the thus exposed narrow area of the channel region.

Abstract: In a circuit layout for signal amplification with the aid of a differential amplifier and signal coupling via a first capacitor, it is proposed, in order to prevent unacceptable operating point displacements into the non-linear area of the amplifier layout in the event of temporarily interfering high-level signals, that one input of the differential amplifier connected to the signal source via the first capacitor be connected via a first resistor, and the other input via a second resistor, jointly via an electronic switch controllable by a comparator, to reference potential. A reference voltage source is connected to one input of the comparator, and the signal source to the other input of the comparator via an RC element, whose time constant is of the same order of magnitude as the time constant formed by the first capacitor and the first resistor.

Abstract: The invention relates to a protective arrangement for field-effect transistors with an insulated gate electrode. An integrated, indiffused protective diode whose breakdown voltage is smaller than that of the gate insulating layer is used therefor. The gist of the invention is that the breakdown voltage of the protective diode is set by two implantation processes, one of which is substantially limited to the region containing the in-diffused diode and the other of which substantially covers the surface of the substrate other than at least the channel region of the field-effect transistor so as to simultaneously increase the field inversion voltage.

Abstract: The invention relates to a process for fault detection on structures on surfaces of electrical components or the auxiliary means required to manufacture these components, wherein the actual structure provided in each respective case is scanned with a test beam. In accordance with the invention, provision is made for structure faults or structure deviations to be directly ascertained from sequences of picture points within the scope of an ordinate scanning.

Abstract: A circuit for detecting current flow in a triac, wherein the circuit operates with only one operating voltage with one pole of this operating voltage being connected to a current terminal of the triac and simultaneously being the voltage reference point for the triac. The triac gate voltage fluctuating around the voltage reference point is used to detect the triac current flow, the gate voltage of the triac is transformed, if necessary, into the voltage range of the operating voltage of the detector circuit, and digital information is generated as a function of the gate voltage to indicate whether a load current is flowing in the triac or not.

Abstract: A controllable integrator for a bipolar integrated filter includes a voltage-current-transformer, a current distribution multiplier and an integrating amplifier. The voltage-current-transformer includes two transistors having their emitters connected via a converting resistor and two current sources each connected to a respective one of the emitters of the two transistors. The current distribution amplifier includes two logarithmic diodes each connected to a respective one of the collectors of the two transistors, a differential stage having differential inputs connected to the two logarithmic diodes, a controllable current source for supplying current to the differential stage, and a current mirror having an output and comprising two transistors of one conductivity type having emitters connected to a source of supply voltage and collectors connected to the output of the differential stage.