Abstract: The invention relates to an optical adjusting process for proximity printing wherein a mask is spaced at a short distance from a substrate on which an image of the mask structure is to be formed. According to the invention, a high-definition image of the structures of the mask and of the substrate is formed by means of light of differing wavelength in a common image plane. This adjusting process is intended, in particular, for X-ray lithography.

Abstract: The invention relates to a solar cell, wherein, in order to increase the efficiency, an amorphous or microcrystalline silicon layer is disposed on the side facing the incident light, thereby enabling the surface recombination speed to be reduced. In a preferred embodiment, this silicon layer is doped and is therefore additionally available for charge carrier transport. High doping effects are thus avoided in the thin surface zone of the semiconductor body.

Abstract: An integrated amplifier circuit comprising an amplifier transistor connected in a common base configuration with its base zone being connected via an integrated capacitance to the semiconductor substrate of the integrated circuit so as to connect (short circuit ) the base zone to the semiconductor substrate at the operating frequency of the amplifier.

Abstract: A receiver amplifier for amplifying a photoelectric current produced by a light-sensitive semiconductor component. The amplifier includes an amplifier transistor, a capacitor connected between the light-sensitive conductor component and the amplifier transistor for isolating signals with a frequency below a certain threshold delivered by the semiconductor components from the amplifier transistor, and a second transistor connected to the amplifier transistor for producing a current which compensates for changes in the current produced by the light-sensitive semiconductor component in response to light pulses.

Abstract: The invention relates to an arrangement for an electronic component operable at low temperatures, in particular, to a radiation sensitive semiconductor component. The arrangement consists of a housing for the component and of a cooler which is in communication with the housing and operates in accordance with the Joule-Thomson effect. The invention consists in that there is arranged between the cooler and the adjacent housing wall a super-insulation comprised of a single- or multi-layered foil with low thermal conductivity and capacity and high thermal-transfer resistance.

Abstract: The invention relates to a housing for opto-electronic components, with the semiconductor component being cooled by a cooler which operates in accordance with the Joule-Thomson effect and is in communication with the housing. The gist of the invention is that the non-evacuation housing comprises several sections, with the first section of the housing which is in direct communication with the cooler having a low thermal conductivity and a low thermal capacity, whereas the end section of the housing containing a radiation transmitting window has a high thermal conductivity and a high thermal capacity.

Abstract: An integrated amplifier circuit which includes a semiconductor substrate, an amplifier transistor fabricated on the substrate, and an RC network fabricated on the substrate to suppress undesired, self-excited oscillations, the RC network being connected between the base of the transistor and the substrate.

Abstract: In a circuit for transforming direct-current signals whose output signal is dependent on the input signal, the temperature variation of the output signal is adjustable, and two transistors whose base-emitter sections exhibit an appropriate voltage difference are provided for control of the temperature variation of the output current.

Abstract: The invention relates to an alloyed contact for n-conducting GaAlAs semiconductor material with a high proportion of aluminum. According to the invention, a first layer consisting of a metal from one of the subgroups IVb, Vb or VIb of the periodic table is first applied to the n-conducting semiconductor material, this layer is then covered with a second metal layer consisting of a gold germanium alloy and both layers are alloyed together.

Abstract: In a multi-stage signal transmitting system whose amplification is electronically adjustable and wherein undesired temperature influence on the amplification is compensated, the amplification adjustment is effected by a stage and the temperature variation compensation via the same stage, which is an amplifier stage, and the temperature variation compensation is independent of the amplifier setting.

Abstract: In a selective amplifier stage with a frequency-selective input filter to which there is coupled inductively an amplifier transistor, there is provided for the inductive coupling of the amplifier transistor to the filter a coil which is magnetically coupled to the coil of the input filter. The coupling coil is of such dimensions that when the input filter is aligned to maximum amplification of the stage, the source impedance driving the transistor is greater than the input impedance of the amplifier transistor.

Abstract: The invention relates to a controllable semiconductor circuit element consisting of a vertical thyristor comprised of four zones of alternating conductivity types and arranged in a semiconductor disk, with the two load current connections located on the top surface and on the bottom surface of the semiconductor disk respectively. According to the invention, the semiconductor disk comprises an additional controllable circuit element with a lateral zone structure on the top surface of the semiconductor disk. Zones of this additional circuit element are linked with zones of the vertical thyristor in such a way as to enable the vertical thyristor to be indirectly ignited by ignition of the lateral circuit element.

Abstract: A broad-band amplifier for the amplification of a photoelectric current triggered by a light signal, including a first transistor connected to receive the photoelectric current, a second transistor connected in series with the first one, a resistance connected between the base of the first transistor and the emitter of the second transistor, a third transistor and a fourth transistor which form a current mirror, the third transistor being connected in series with the second transistor, and a resistance located between the third transistor and ground.

Abstract: In a circuit arrangement for the amplification of electric signals comprising an electronic amplification control there is provided for the amplification control a current mirror circuit by means of which the temperature dependency of the amplification is adjustable.

Abstract: A remote-control lock system has a transmitter that can be set to emit any one of a succession of differently coded signals, a receiver that can be set to respond to any one of the succession of signals, and a lock operable by the receiver when it receives the signal it is set to. Initially the transmitter is set to emit a predetermined one of the succession of signals and the receiver is set to respond to the predetermined one of the signals. Thereafter, after each emission by the transmitter and reception by the receiver, the transmitter and receiver are reset to the next of the signals in the succession except after the last signal of the succession has been emitted and received in which case the transmitter and receiver are reset to the first of the succession of signals. Thus each actuation of the transmitter change the code that will open the lock.

Abstract: A process for the production of monocrystalline Hg.sub.1-x Cd.sub.x Te wherein a molten mass of the desired composition x is cooled and solidified in a closed vessel and the solidified crystal is converted at temperatures below its melting point by high temperature recrystallization into the monocrystalline state, with an ampule of conical longitudinal cross-section being used as the closed vessel and the ampule being so held during the solidifying of the molten mass that the molten mass extends from the ample tip into the interior of the ampule. Undesired pressure is prevented from being exerted on the crystal by the ampule wall by the crystal only partially filling out the ampule interior and being conveyed into the ampule area of larger cross-section, and the recrystallization process is performed in a temperature zone with a longitudinal temperature gradient with the temperature decreasing in the direction of the larger ampule cross-section.

Abstract: A protection circuit for an integrated circuit that is connected across a power source includes a first transistor and a zener diode or equivalent circuit arrangement for causing the first transistor to conduct if the integrated circuit receives an excessive voltage from the power source. A measuring resistor is connected to the emitter of the first transistor, and a voltage drop appears across the measuring resistor if the first transistor conducts. A comparator is provided to compare the voltage across the measuring resistor to a reference voltage. The output of the comparator drives the base of a second transistor, the emitter of which is connected to the collector of the first transistor and the collector of which is connected to the base of the first transistor. Current through the second transistor renders the first transistor more conductive.

Abstract: A receiver input circuit comprising a control loop for amplification control, wherein the control signal for the control loop is derived from the intermediate frequency signal and supplied to the part of the circuit preceding the mixer stage. The receiver input circuit furthermore comprises a second amplification control loop whose control signal is taken out prior to the mixer stage, and a third amplification control loop whose response threshold and frequency band width are lower than the response threshold and frequency band width of the first and second control circuits.

Abstract: In a process for the production of a solar cell with a p-n junction and a conductive antireflection coating, there is deposited on a semiconductor body a first layer as a diffusion source for the production of the p-n junction and also for the doping of the antireflecting coating, and on the first layer a second layer for the production of the antireflection coating.

Abstract: An input circuit comprises at least two input paths which are connected to a common input terminal and which are alternately connectable to a common output. The input paths form selection members for the UHF and VHF frequency range whose signals are amplified in a common preamplifier component. In order to avoid mutual influencing of the selection members with simple measures, the output of the VHF selection member is connected to the common output via an impedance of the UHF selection member and a switch is provided for connecting the impedance and the output of the VHF selection member to ground for high frequency. The switch is conductive during UHF operation and then short circuits the output of the connected VHF input path.