Abstract: An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer.

Abstract: An interconnection element and method for making same is disclosed. The interconnection element may include a plurality of metal conductors, a plurality of solid metal bumps and a low melting point (LMP) metal layer. The solid metal bumps overly and project in a first direction away from respective ones of the conductors. Each bump has at least one edge bounding the bump in at least a second direction transverse to the first direction. The low melting point (LMP) metal layer has a first face joined to the respective ones of the conductors and bounded in the second direction by at least one edge and a second face joined to the bumps. The edges of the bumps and the LMP layer are aligned in the first direction, and the LMP metal layer has a melting temperature substantially lower than the conductors.

Abstract: A method for forming a bump structure and a bump structure for conductive interconnection with another element having at least one of microelectronic devices or wiring thereon, used as an electric connection in an electronic circuit, includes the steps of forming a mandrel by steps including forming at least one opening extending through a bump-forming die body in the thickness direction thereof and positioning a bump-forming die lid on a surface of the bump-forming die body so as to cover one end of the opening and to thereby define a bump-forming recess. The bump-forming die body may be comprised of a metal sheet. A metal layer is formed at least on an inner surface of the bump-forming die lid exposed within the bump-forming recess. The mandrel is removed so as to expose the metal layer and form a bump structure.

Abstract: A process for manufacturing a multilayer wiring board including the steps of forming an insulating layer on a base provided with a bump for interlayer connection, bonding a copper foil onto the insulating layer by a thermocompression bonding by sandwiching the copper foil between stainless steel plates, and patterning the copper foil, in which a metal foil is interposed at least between each of the stainless plates and the copper foil at the time of the thermocompression bonding. At this time, a mold release layer is formed on a surface of the metal foil to be imposed. Thus, such a multilayer wiring board can be manufactured that prevents sticking of a product after molding (cementing of the copper foil) and excels in dimensional stability without occurrence of wrinkling and ruggedness.

Abstract: A method of fabricating an interconnect element may include fabricating a metal layer that overlies a carrier layer and that includes a plurality of metal traces; providing a dielectric element to overlie the metal layer and the carrier layer; providing a plurality of metal posts; and removing the carrier layer to expose the first major surface of the dielectric element and the outer surfaces of the plurality of metal traces.

Abstract: An interconnect element is provided which includes a dielectric element having a first major surface, a second major surface remote from the first major surface, and a plurality of recesses extending inwardly from the first major surface. A plurality of metal traces are embedded in the plurality of recesses, the metal traces having outer surfaces substantially co-planar with the first major surface and inner surfaces remote from the outer surfaces. A plurality of posts extend from the inner surfaces of the plurality of metal traces through the dielectric element, the plurality of posts having tops exposed at the second major surface. A multilayer wiring board including a plurality of such interconnect elements is also provided, as well as various methods for making such interconnect elements and multilayer wiring boards.

Abstract: An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major surface. A plurality of first metal interconnect patterns are embedded in the plurality of first recesses and extend in one or more directions along the first major surface. A plurality of second metal interconnect patterns are embedded in the plurality of second recesses and extend in one or more directions along the second major surface. A plurality of non-hollow metal posts extend through the dielectric element between at least some of the plurality of first metal interconnect patterns and at least some of the plurality of second metal interconnect patterns.

Abstract: A method of making a microelectronic assembly includes providing a conductive metal layer having a first surface and a second surface, and etching the first surface of the conductive metal layer to form conductive protrusions, whereby after the etching step, the second surface of the conductive metal layer defines a substantially flat, continuous surface. The method includes juxtaposing a layer of an insulating material with tips of the conductive protrusions, and pressing the conductive protrusions through the layer of an insulating material so that the tips of the conductive protrusions are accessible at a first surface of the layer of an insulating material.

Abstract: A multiple wiring layer interconnection element includes capacitors or other electrical components embedded between a first exposed wiring layer and a second exposed wiring layer of the interconnection element. Internal wiring layers and are provided between exposed surfaces of the respective capacitors, the internal wiring layers being electrically insulated from the capacitors by dielectric layers. The internal wiring layers are isolated from each other by an internal dielectric layer. Conductive vias provide conductive interconnection between the two internal wiring layers. A method of fabricating a multiple wiring layer interconnection element is also provided.

Abstract: An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer.

Abstract: An interconnection element and method for making same is disclosed. The interconnection element may include a plurality of metal conductors, a plurality of solid metal bumps and a low melting point (LMP) metal layer. The solid metal bumps overly and project in a first direction away from respective ones of the conductors. Each bump has at least one edge bounding the bump in at least a second direction transverse to the first direction. The low melting point (LMP) metal layer has a first face joined to the respective ones of the conductors and bounded in the second direction by at least one edge and a second face joined to the bumps. The edges of the bumps and the LMP layer are aligned in the first direction, and the LMP metal layer has a melting temperature substantially lower than the conductors.

Abstract: A method of making a microelectronic element includes making a connection component by providing a metal layer having a top surface and a bottom surface, providing a dielectric layer over the top surface of the metal layer and forming openings in the dielectric layer to expose portions of the top surface of the metal layer. The method includes providing conductive elements atop the dielectric layer, at least some of the conductive elements extending through the openings in the dielectric layer and being in contact with the metal layer, and plating first conductive protrusions atop the at least some of the conductive elements extending through the openings in the dielectric layer, the first conductive protrusions extending away from the metal layer. The method includes selectively removing portions of the metal layer from the bottom surface of the metal layer to form second conductive protrusions that extend away from the first conductive protrusions.

Abstract: A method for forming a bump structure and a bump structure for conductive interconnection with another element having at least one of microelectronic devices or wiring thereon, used as an electric connection in an electronic circuit, includes the steps of forming a mandrel by steps including forming at least one opening extending through a bump-forming die body in the thickness direction thereof and positioning a bump-forming die lid on a surface of the bump-forming die body so as to cover one end of the opening and to thereby define a bump-forming recess. The bump-forming die body may be comprised of a metal sheet. A metal layer is formed at least on an inner surface of the bump-forming die lid exposed within the bump-forming recess. The mandrel is removed so as to expose the metal layer and form a bump structure.

Abstract: A multilayer wiring board includes a first insulating film and a first patterned metal wiring film extending along a first major surface thereof, and a second insulating film a second patterned metal wiring film extending along a second major surface thereof. The wiring board includes solid metal interconnects connecting the first patterned metal wiring film to the second patterned metal wiring film, the interconnects extending through at least one of the first and second insulating films, and a microelectronic element disposed between the first and second patterned wiring films, the microelectronic element having bond pads conductively connected to the first patterned metal wiring films. The wiring board also includes a plurality of external contacts exposed at one or more external surfaces of the multilayer wiring board, the contacts being conductively connected to at least one of the first and second patterned metal wiring films.

Abstract: To provide a multilayer wiring board mainly used for an electronic device, in which a bump passing through an inter layer insulating film allows for inter layer connection between plural wiring films insulated from one another with plural inter layer insulating layers. In the multilayer wiring board, a circuit element such as an electronic part, a semiconductor chip, or a passive element is accommodated in the inter layer insulating films so as to connect its terminal with the corresponding wiring film. In particular, the semiconductor chip is polished to a thickness of 50 ?m or smaller, and the multilayer wiring board itself for the electronic device has the flexibility.

Abstract: The connection resistance between a metal bump (8) and a metal layer (10) for forming a wiring film deposited later is further decreased, the connection stability is enhanced, the wiring path passing through the metal bump (8) is further shortened, the planarity is enhanced, and the metal bump (8) does not come out easily. A wiring film interconnecting member wherein a plurality of pillar-like metal bumps (8) composed of copper and having a cross-sectional area of the top surface smaller than that of the bottom surface and interconnecting the wiring films of a multilayer wiring board are buried in an interlayer insulation film (10) in such a way that at least one end projects. The upper surface of the interlayer insulation film (10) is so curved as to be high at a part in contact with the metal bump (8) and lower gradually as being farther therefrom.

Abstract: A multilayer interconnect element is provided which includes at least one dielectric element in which metal interconnect patterns are exposed at an outer surface thereof, the metal interconnect patterns having outer surfaces which are co-planar with an exposed outer surface of the dielectric element. In addition, multilayer interconnect elements are provided in which second interconnect elements which do not have co-planar interconnect patterns are integrated therewith as intermediate elements, and the resulting multilayer interconnect element has co-planar interconnect patterns.

Abstract: An interconnect element is provided which includes a dielectric element having a major surface. Metal interconnect patterns are embedded in recesses which extend inwardly from the major surface, the outer surfaces of the interconnect patterns being substantially co-planar with the major surface and extending in one or more directions of the major surface. A projecting conductive film extends over the major surface in at least one direction parallel to a plane defined by the major surface such that it contacts the dielectric element along at least a portion of the major surface and conductively contacts an outer surface of at least one of the metal interconnect patterns.

Abstract: Methods are provided for manufacturing a wiring circuit element or wiring board in which a set of rough wiring patterns are formed by selectively etching a metal layer of a patternable member which includes a carrier layer having a rough surface and a thin rough-surfaced etch stop layer between the carrier layer and the metal layer. The etch stop layer and wiring patterns are joined to an insulating layer such that the wiring patterns adhere to the insulating layer and the insulating layer acquires a rough surface. Thereafter, the carrier layer and the etch stop layer are removed, after which openings are formed in the insulating layer in contact with at least some of the wiring patterns. A layer of metal is electrolessly plated onto the rough major surface of the insulating layer, and then a conductive wiring pattern is selectively electroplated over the electrolessly plated layer to form plated openings that interconnect at least some of the wiring patterns.

Abstract: A process for manufacturing a multilayer wiring board including the steps of forming an insulating layer on a base provided with a bump for interlayer connection, bonding a copper foil onto the insulating layer by a thermocompression bonding by sandwiching the copper foil between stainless steel plates, and patterning the copper foil, in which a metal foil is interposed at least between each of the stainless plates and the copper foil at the time of the thermocompression bonding. At this time, a mold release layer is formed on a surface of the metal foil to be imposed. Thus, such a multilayer wiring board can be manufactured that prevents sticking of a product after molding (cementing of the copper foil) and excels in dimensional stability without occurrence of wrinkling and ruggedness.