Abstract: A utilization factor controller is to estimate power consumption values corresponding to a plurality of first utilization factor and second utilization factor pairs, the first utilization factor corresponding to utilization of the first transceiver that is to communicate using a first protocol, the second utilization factor corresponding to utilization of the second transceiver that is to communicate using a second protocol different form the first protocol, the utilization factor controller to select a first utilization factor and second utilization factor pair based on the estimated power consumption value. A transmission time controller is to calculate first and second transmission times to be used by the first and second transceiver based on the selected first utilization factor and second utilization factor pair. A data allocator is to allocate data for transmission by the first transceiver and the second transceiver according to the first and second transmission times.

Abstract: An electronic circuit includes a first switch driver, a second switch driver, and a switch node coupled to the first and second switch drivers, and configured to couple to a motor. The electronic circuit also includes slew rate measurement circuitry coupled to the switch node and configured to measure a slew rate of switching operations at the switch node. The electronic circuit also includes a controller coupled to the first switch driver, to the second switch driver, and to the slew rate measurement circuitry, and configured to compare a measured slew rate provided by the slew rate measurement circuitry with a target slew rate, and to selectively adjust control signals to at least one of the first and second switch drivers based on a comparison result. The first and second switch drivers are configured to drive switches to power the motor based on the control signals.

Abstract: In some examples, a sigma-delta analog-to-digital converter (ADC), comprises a first set of switches configured to receive a first voltage signal; a second set of switches coupled to the first set of switches at a first node and a second node, the second set of switches configured to receive a second voltage signal; an integrator including a first input sampling capacitor coupled to the first node and a second input sampling capacitor coupled to the second node, wherein the integrator configured to generate a first output signal. The sigma-delta ADC further comprises a comparator coupled to the integrator and configured to generate a second output signal based on the first output signal; and a controller unit having a first counter, a second counter, and a processor, the controller unit coupled to the first and second sets of switches, the integrator, and the comparator.

Abstract: Deblocking filtering is provided in which an 8×8 filtering block covering eight sample vertical and horizontal boundary segments is divided into filtering sub-blocks that can be independently processed. To process the vertical boundary segment, the filtering block is divided into top and bottom 8×4 filtering sub-blocks, each covering a respective top and bottom half of the vertical boundary segment. To process the horizontal boundary segment, the filtering block is divided into left and right 4×8 filtering sub-blocks, each covering a respective left and right half of the horizontal boundary segment. The computation of the deviation d for a boundary segment in a filtering sub-block is performed using only samples from rows or columns in the filtering sub-block. Consequently, the filter on/off decisions and the weak/strong filtering decisions of the deblocking filtering are performed using samples contained within individual filtering blocks, thus allowing full parallel processing of the filtering blocks.

Abstract: A lighting device circuit comprising: a reference LED string, a mirror LED string coupled in parallel to the reference LED string, an operational amplifier based current mirror circuit coupled to the reference LED string and to the mirror LED string, and a window comparator circuit that includes only a single input that is coupled to a fault sense node. The fault sense node directly connects to a drain node of a transistor within the operational amplifier based current mirror and a LED within the mirror LED string.

Abstract: A quadrature clock skew calibration circuit includes an I-Q clock generator having an input coupled to receive a first clock signal. The I-Q clock generator generates an in phase (I) clock signal and a quadrature (Q) clock signal. The quadrature clock skew calibration circuit includes an I-Q skew sensor having a first input coupled to receive the I clock signal and having a second input coupled to receive the Q clock signal. The I-Q skew sensor generates an I-Q skew signal responsive to a skew between the I and Q clock signals. The quadrature clock skew calibration circuit includes a control circuit having a first input coupled to receive the I-Q skew signal and having a second input coupled to receive a second clock signal. The control circuit varies the duty cycle of the first clock signal responsive to the I-Q skew signal and the second clock signal.

Abstract: A sectioned field effect transistor (“FET”) for implementing a rapidly changing sense range ratio dynamically in response to changing load and main supply conditions. The sectioned FET may have multiple main FET sections, and multiple sense FET sections. These sections can be dynamically connected and disconnected from the sectioned FET. The sections may also be connected by a common gate. There may also be common drain or source connections for the main FET sections, and also common drain or source connections for the sense FET sections. The sectioned FET allows for the sense range to be extended by a multiple of k+1, where k is the size ratio or factor of the additional sense FET sections. This allows the current sense range ratio to be extended to (m+n)/n*(k+1).

Abstract: A buck voltage converter comprising a high side switch, a low side switch, a capacitor, an inductor, a gate driver circuit having outputs coupled to the gate terminal of the high side switch and the gate terminal of the low side switch, and a separate voltage regulator circuit that powers circuitry internal to the buck voltage converter. The voltage regulator circuit includes a multiplexer having a first multiplexer input coupled to the input voltage source, a second multiplexer input coupled to the buck output of the buck voltage converter, and one or more multiplexer control inputs to select which of the two multiplexer inputs is coupled to a multiplexer output and pass transistor having a first terminal coupled to the multiplexer output of the multiplexer and having a second terminal coupled to the regulator output of the voltage regulator.

Abstract: A circuit includes first through fifth transistors. The first transistor has a first control input and first and second current terminals. The second transistor has a second control input and third and fourth current terminals. The third transistor has a third control input and fifth and sixth current terminals. The third control input is coupled to the third current terminal, and the fifth current terminal is coupled to a supply voltage node. The fourth transistor has a fourth control input and seventh and eighth current terminals. The fourth control input is coupled to the first current terminal, and the seventh current terminal coupled to the supply voltage node. The fifth transistor has a fifth control input and ninth and tenth current terminals. The fifth control input is coupled to the first control input, and the tenth current terminal coupled to the second current terminal.

Abstract: High voltage integrated circuit capacitors are disclosed. In an example arrangement, A capacitor structure includes a semiconductor substrate; a bottom plate having a conductive layer overlying the semiconductor substrate; a capacitor dielectric layer deposited overlying at least a portion of the bottom plate and having a first thickness greater than about 6 um in a first region; a sloped transition region in the capacitor dielectric at an edge of the first region, the sloped transition region having an upper surface with a slope of greater than 5 degrees from a horizontal plane and extending from the first region to a second region of the capacitor dielectric layer having a second thickness lower than the first thickness; and a top plate conductor formed overlying at least a portion of the capacitor dielectric layer in the first region. Methods and additional apparatus arrangements are disclosed.

Abstract: A digital system includes a non-volatile calculating register having a set of latches configured to perform a calculation. A set of non-volatile storage cells is coupled to the set of latches. Access detection logic is coupled to the calculating register and is operable to initiate a calculation of a next value by the calculating register each time the calculating register is accessed by an accessing module. The access detection logic is operable to cause the next value to be stored in the set of non-volatile storage cells at the completion of the calculation as an atomic transaction. After a power loss or other restore event, the contents of the calculating register may be restored from the non-volatile storage cells.

Abstract: The disclosure describes novel methods and apparatuses for accessing test compression architectures (TCA) in a device using either a parallel or serial access technique. The serial access technique may be controlled by a device tester or by a JTAG controller. Further the disclosure provides an approach to access the TCA of a device when the device exists in a daisy-chain arrangement with other devices, such as in a customer's system. Additional embodiments are also provided and described in the disclosure.

Abstract: The disclosure provides a novel method and apparatus for inputting addresses to devices to select the device TAP for access. Further, the disclosure provides a novel method and apparatus for inputting addresses for selecting device TAPs and for inputting commands for commanding circuitry within the device. The inputting of addresses or the inputting of addresses and commands is initiated by a control bit input on TDI that is recognized during the Run Test/Idle, Pause-DR or Pause-IR TAP states.

Abstract: A protection device includes a dynamic gate bias circuit and an input pass switch. The dynamic gate bias circuit comprises an input pass switch configured to receive a first input and a first control signal; a voltage level shifter coupled to the input pass switch; a current mirror coupled to the voltage level shifter at a first node; a regulator coupled to the current mirror at a second node; and a transistor coupled to the first node, wherein the transistor is configured to receive a second control signal from the first node and to receive the first input.

Abstract: An article of manufacture comprises: an integrated circuit having a contact; a conductive bump electrically coupled to the contact, the conductive bump having a profile with a wave pattern; a lead frame electrically coupled to the conductive bump; and an integrated circuit package mold, the integrated circuit package mold covering portions of the conductive bump and the lead frame.

Abstract: An integrated circuit (IC) includes first and second memory devices and a bridge. The IC also includes a first interconnect segment coupled between the first memory device and the bridge. The IC further includes a second interconnect segment coupled between the first and second memory devices, and a third interconnect segment coupled between the bridge and the second memory device. The IC includes a first DMA circuit coupled to the first interconnect segment, and a second DMA circuit coupled to the second interconnect segment. A fourth interconnect segment is coupled between the first and second DMA circuits.

Abstract: An integrated circuit (IC) includes a substrate with a semiconductor surface layer including circuitry configured for realizing at least one circuit function including a plurality of transistors, including at least one dielectric layer having a first and a second through-via over the plurality of transistors. The through-vias include a first top level via and at least a second top level via lateral to the first top level via. A composite layer includes copper (Cu), a first metal including zinc, and a second metal, wherein the composite layer is on a barrier layer that is on the first top level via and on the second top level. A plurality of Cu traces includes a first Cu top metal trace on the composite layer contacting the first top level via and a second Cu metal trace on the composite layer contacting the second top level via.

Abstract: Circuitry for determining the direction of incidence of an acoustic signal in an integrated circuit. An electronic circuit includes a packaged integrated circuit. The packaged integrated circuit includes a die. The die includes a plurality of acoustic transducers spaced apart on the die, and a measurement circuit. The plurality of acoustic transducers includes at least a first acoustic transducer and a second acoustic transducer. The measurement circuit is coupled to at least the first acoustic transducer and the second acoustic transducer. The measurement circuit is configured to determine for the first acoustic transducer, a first time at which the first acoustic transducer detects an acoustic signal propagating in the die; and determine for the second acoustic transducer, a second time at which the second acoustic transducer detects the acoustic signal propagating in the die.

Abstract: An electronic device comprises: a molybdenum layer; a bond pad formed on the molybdenum layer, the bond pad comprising aluminum; and a wire bonded to the bond pad, the wire comprising gold.

Abstract: A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.