Patents Assigned to The Doshisha
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Patent number: 8545688Abstract: Dense carbon nitride films are electrochemically formed on a conductive substrate by placing the substrate acting as cathode in a molten salt electrolyte bath and applying DC current across the substrate and a counter electrode acting as anode also placed in the molten salt electrolyte bath. Carbonate ion and nitrate ion are concurrently reduced to deposit carbon nitride films on the substrate.Type: GrantFiled: May 28, 2010Date of Patent: October 1, 2013Assignees: Toyota Boshoku Kabushiki Kaisha, IMSEP Co., Ltd., SEC Carbon Limited, The DoshishaInventors: Tokujiro Nishikiori, Hiroaki Amahashi, Kouji Kuroda, Yasuhiko Ito, Kazuhito Fukasawa, Naohiro Yasuda
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Publication number: 20130134155Abstract: A heating chamber is divided into a plurality of spaces by barrier sections including a conductive material. Phase shifters having different lengths with respect to a direction and including a dielectric body having permittivity higher than air are inserted in positions of a terminal section, in the spaces except for at least one space, to differentiate positions of bottoms of standing microwaves formed in the respective spaces from each other with respect to the direction. In addition, impedance adjusters having different lengths with respect to the direction and including a dielectric body having permittivity higher than air are inserted in positions on an upstream side of a region passed by the object to be heated, in the spaces except for at least one space, to reduce differences in impedance of the spaces from an entrance of the heating chamber to the terminal section including the phase shifters.Type: ApplicationFiled: November 27, 2012Publication date: May 30, 2013Applicants: THE DOSHISHA, MURATA MACHINERY, LTD.Inventors: MURATA MACHINERY, LTD., THE DOSHISHA
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Patent number: 8443599Abstract: A thermoacoustic apparatus capable of reducing the time elapsed until an acoustic wave is generated and improving the energy conversion efficiency significantly is provided. In order to solve the above-described issues, in a thermoacoustic apparatus 1 including a pair of heat exchangers 41 and 43 separately set on the high temperature side and on the low temperature side, a second stack 42 which is sandwiched between the heat exchangers 41 and 43 and which has a plurality of transmission paths in the inside, and a loop tube 2 provided with the heat exchangers 41 and 43 and the stack 42, the thermoacoustic apparatus converting acoustic energy generated in the loop tube 2 with an acoustic wave generator 3 to thermal energy by using the heat exchangers 41 and 43 and the stack 42, a narrow portion 21 in which the inner diameter is relatively reduced is disposed at a position at which the particle velocity of a standing wave generated in the loop tube 2 is in the vicinity of a maximum.Type: GrantFiled: February 21, 2007Date of Patent: May 21, 2013Assignee: The DoshishaInventors: Yoshiaki Watanabe, Shinichi Sakamoto, Hideo Yoshida, Yosuke Imamura
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Publication number: 20130124124Abstract: An atomic flux measurement device for measuring the amount of dissociated atomic flux produced by discharge and emitted from a plasma generation cell into a vacuum camber. The atomic flux measurement device includes a counter electrode body including a pair of first and second sheet-like electrodes that are arranged substantially parallel to each other with a predetermined spacing between them, a direct-current power supply configured to maintain the first sheet-like electrode at a negative potential so that atoms attached to the inner surface of the sheet-like electrode undergo self-ionization and to apply a direct-current voltage between the first and second sheet-like electrodes so that a current flows between the first and second sheet-like electrodes, and a direct-current ammeter configured to measure a current flowing due to electrons emitted by the self-ionization of the dissociated atoms attached to the inner surface of the first sheet-like electrode.Type: ApplicationFiled: January 3, 2013Publication date: May 16, 2013Applicants: ARIOS INC., THE DOSHISHAInventors: THE DOSHISHA, ARIOS INC.
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Publication number: 20130108338Abstract: A microwave heating device includes a microwave generating portion outputting a microwave, a conductive heating chamber into which the microwave is led and having a short-circuited terminal end in a traveling direction of the microwave, and a tuner provided between the microwave generating portion and the heating chamber. The heating chamber has an opening for passing a member to be heated therethrough. The tuner re-reflects the microwave reflected at the terminal end of the heating chamber onto the heating chamber side. The microwave output end of the microwave generating portion and the tuner are connected by a square tubular waveguide made of a conductive material. The tuner and the terminal end of the heating chamber are connected by a square tubular waveguide, which is made of a conductive material except for the opening for passing the member to be heated therethrough.Type: ApplicationFiled: October 31, 2012Publication date: May 2, 2013Applicants: THE DOSHISHA, MURATA MACHINERY, LTD.Inventors: Murata Machinery, Ltd., The Doshisha
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Patent number: 8414500Abstract: An arteriosclerosis diagnostic device according to various embodiments is a simple device, resistant to an external factor, such as an error resulting from a skin surface, and capable of measuring the degree of hardness of an artery. The arteriosclerosis diagnostic device detects a heart sound and a pulse wave at least one location of a living body, the pulse wave propagating through an artery in relation to the heart sound, converts detected signals thereof into respective frequency signals, specifies the peak frequency of each of the frequency signals, and determines the degree of arteriosclerosis on the basis of the difference between the peak frequency of the heart sound and the peak frequency of the pulse wave. Accordingly, the degree of arteriosclerosis can be determined by comparison between the frequency signals.Type: GrantFiled: May 20, 2010Date of Patent: April 9, 2013Assignees: The Doshisha, Murata Manufacturing Co., Ltd.Inventors: Mami Matsukawa, Yoshiaki Watanabe, Masashi Saito, Takaaki Asada, Mio Furuya
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Patent number: 8357271Abstract: The present invention aims to provide a zinc electrowinning anode capable of inhibiting manganese compound deposition on the anode and a cobalt electrowinning anode capable of inhibiting cobalt oxyhydroxide deposition on the anode. The zinc electrowinning anode according to the present invention is a zinc electrowinning anode having an amorphous iridium oxide-containing catalytic layer formed on a conductive substrate, and the zinc electrowinning method according to the present invention is an electrowinning method using that electrowinning anode. Also, the cobalt electrowinning anode according to the present invention is an electrowinning anode having an amorphous iridium oxide or ruthenium oxide-containing catalytic layer formed on a conductive substrate, and the cobalt electrowinning method according to the present invention is an electrowinning method using that electrowinning anode.Type: GrantFiled: June 9, 2009Date of Patent: January 22, 2013Assignee: The DoshishaInventor: Masatsugu Morimitsu
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Publication number: 20120247569Abstract: A standing wave and a traveling wave are generated rapidly, and thereby heat exchange is performed rapidly and efficiently. The thermoacoustic apparatus includes a first stack 3a between a first high-temperature-side heat exchanger 4 and a first low-temperature-side heat exchanger 5 and a second stack 3b between a second high-temperature-side heat exchanger 6 and a second low-temperature-side heat exchanger 7 in the loop tube 2. An acoustic wave is generated through self excitation by heating the first high-temperature-side heat exchanger 4, and the second low-temperature-side heat exchanger 7 is cooled by a standing wave and a traveling wave. The loop tube includes linear tube portions 2a along the vertical direction and connection tube portions 2b shorter than the linear tube portions 2a. The first stack 3a is disposed in the longest linear tube portion 2a.Type: ApplicationFiled: April 6, 2012Publication date: October 4, 2012Applicant: THE DOSHISHAInventors: Yoshiaki WATANABE, Shinichi SAKAMOTO
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Patent number: 8266918Abstract: A Rankine cycle system has a condenser, a refrigerant circulating pump connected to the condenser, a heat collecting device connected to the refrigerant circulating pump, and an expansion turbine connected to the heat collecting device and the condenser. The refrigerant circulating pump includes an expansion tank or pressure vessel, a refrigerant supply conduit connected to the lower part of the expansion tank and to the condenser, and a refrigerant discharge conduit connected to the upper part of the expansion tank. An open/close valve is installed in the refrigerant supply conduit. A pressure regulating valve installed in the refrigerant discharge pipe opens when a pressure reaches a specified value or higher. A temperature regulating device can heat the refrigerant in the expansion tank to produce a refrigerant vapor of saturated temperature or higher, which vapor can be introduced into the heat collecting device.Type: GrantFiled: April 28, 2009Date of Patent: September 18, 2012Assignees: Mayekawa Mfg. Co., Ltd., The Doshisha, Showa Denko K.K., Showa Denko Gas Products Co., Ltd., Yoshimura Construction Co., Ltd.Inventors: Hiroshi Yamaguchi, Katsumi Fujima, Masatoshi Enomoto, Noboru Sawada
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Patent number: 8222674Abstract: Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-?M? (0?X, Y, Z?1, X+Y+Z=1, 0??<1, M is a Group V element except nitrogen).Type: GrantFiled: September 19, 2011Date of Patent: July 17, 2012Assignees: Showa Denko K.K., The DoshishaInventors: Tadashi Ohachi, Takashi Udagawa
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Publication number: 20120168990Abstract: A resin molding apparatus includes a pair of metal molds respectively arranged so as to be insulated from the ground with insulating materials, and a molding portion including the pair of metal molds and to which a resin material is provided. At least one metal mold of the pair of metal molds is provided with electrodes at two points flanking the molding portion. A high frequency current generator capable of applying high frequency current having a frequency of about 10 kHz or more is connected to the two electrodes.Type: ApplicationFiled: March 10, 2010Publication date: July 5, 2012Applicants: THE DOSHISHAInventors: Hideyuki Kuwahara, Tsutao Katayama, Kazuto Tanaka
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Patent number: 8182755Abstract: A method and apparatus for easily generating ozone with a high concentration in the air without requiring a high voltage power supply or a vacuum apparatus, wherein an ozone gas with a high concentration is generated in the atmosphere around a hemimorphic crystal of which the direction of polarization is uniform by placing the crystal in the air and repeatedly heating and cooling the crystal, are provided.Type: GrantFiled: November 21, 2007Date of Patent: May 22, 2012Assignees: Kyoto University, The DoshishaInventors: Yoshiaki Ito, Shinzo Yoshikado, Yoshikazu Nakanishi
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Patent number: 8160368Abstract: The image feature extraction method of the present invention includes: the step of performing k2 dividing process at least once on a given image so as to convert the given image into a multi-divided image, where the k2 dividing process comprises the steps of: a) creating matrix T based on image matrix X; b) computing singular values of the matrix T; c) determining whether or not minj|?j??j?1|>?; d) if the result of the determination in the step c) is “No”, returning to the step c) subsequent to computing the singular values of the enlarged matrix T?; e) if the result of the determination in the step c) is “Yes”, obtaining U which satisfies T=USVT; f) obtaining matrix T1=UTT; and g) creating image matrix X1 based on matrix T1.Type: GrantFiled: February 2, 2007Date of Patent: April 17, 2012Assignees: Japan Science and Technology Agency, The DoshishaInventors: Yoshimasa Nakamura, Masashi Iwasaki, Masahiko Obata, Koichi Kondo, Shohei Sasada
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Patent number: 8103170Abstract: The present invention inputs a signal synthesized an optical pulse with a variable-wavelength laser beam different in wavelength from it to a delay unit (S1). The delay unit branches the signal to two optical signals, produces an optical path difference between them to afford a delay, synthesizes them again to generate a multiplexed optical signal, and minutely varies the optical path length of one of them (S2). The present invention measures output variance of the delay unit on a variable-wavelength laser beam resulting from the minute variance (S3), and controls the optical path difference so as to minimize output variance at a position where the output is a maximum or minimum, or is a specific value other than them (S4). This stabilizes a phase difference between adjacent pulses of the multiplexed optical signal outputted from the delay unit (5) with a simple construction in optical time division multiplexing technology.Type: GrantFiled: August 22, 2008Date of Patent: January 24, 2012Assignee: The DoshishaInventor: Hiroyuki Toda
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Publication number: 20120007050Abstract: Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-?M? (0?X, Y, Z?1, X+Y+Z=1, 0??<1, M is a Group V element except nitrogen).Type: ApplicationFiled: September 19, 2011Publication date: January 12, 2012Applicants: THE DOSHISHA, SHOWA DENKO K.K.Inventors: Tadashi OHACHI, Takashi UDAGAWA
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Publication number: 20110312914Abstract: The present invention provides a carbon monoxide removal agent that can be easily administered to a patient by injection or orally. The carbon monoxide removal agent of the present invention contains, as an active ingredient, an inclusion complex in which a cyclodextrin dimer represented by chemical formula (1) below includes a water-soluble metalloporphyrin. (In the formula, m represents either of number 1 or 2 and n represents any of number 1, 2, or 3.Type: ApplicationFiled: August 25, 2011Publication date: December 22, 2011Applicants: TOKAI UNIVERSITY EDUCATIONAL SYSTEM, THE DOSHISHAInventors: Koji KANO, Hiroaki KITAGISHI, Shigeru NEGI, Akiko KIRIYAMA, Akino HONBO, Akira KAWAGUCHI, Hideo TSUKADA
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Publication number: 20110290655Abstract: Dense carbon films are deposited on a conductive substrate by placing the substrate acting as anode in a molten salt electrolyte bath containing a source of carbide ion and applying DC current across the substrate and a counter electrode acting as cathode also placed in the molten salt electrolyte bath. The carbide ions are electrochemically oxidized to deposit a carbon film on the surface of the substrate.Type: ApplicationFiled: May 28, 2010Publication date: December 1, 2011Applicants: TOYOTA BOSHOKU KABUSHIKI KAISHA, THE DOSHISHA, SEC CARBON, LIMITED, I'MSEP CO., LTD.Inventors: Tokujiro NISHIKIORI, Hiroaki AMAHASHI, Kouji KURODA, Yasuhiko ITO, Naohiro YASUDA
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Publication number: 20110290656Abstract: Dense carbon nitride films are electrochemically formed on a conductive substrate by placing the substrate acting as cathode in a molten salt electrolyte bath and applying DC current across the substrate and a counter electrode acting as anode also placed in the molten salt electrolyte bath. Carbonate ion and nitrate ion are concurrently reduced to deposit carbon nitride films on the substrate.Type: ApplicationFiled: May 28, 2010Publication date: December 1, 2011Applicants: TOYOTA BOSHOKU KABUSHIKI KAISHA, THE DOSHISHA, SEC CARBON, LIMITED, I'MSEP CO., LTD.Inventors: Tokujiro NISHIKIORI, Hiroaki AMAHASHI, Kouji KURODA, Yasuhiko ITO, Kazuhito FUKASAWA, Naohiro YASUDA
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Publication number: 20110287270Abstract: To provide a method for forming a boron-containing thin film, by which a uniform boron thin film with good adhesion can be formed on the surface of a processing object, and also to provide a multilayer structure. An electrolysis apparatus includes an anode 1, a processing object 2 serving as a cathode, an electrolytic vessel 4, and a molten salt electrolytic bath 5. A variable power supply 6 is connected between the anode 1 and the processing object 2. The variable power supply 6 is configured to be capable of changing a voltage or current waveform during the electrolysis process. Current of an appropriate pulse waveform is applied in the molten salt for electrolysis to form a uniform boron thin film 3 within the processing object 2 having a complicated shape.Type: ApplicationFiled: October 22, 2009Publication date: November 24, 2011Applicants: ROHM CO., LTD., I'MSEP CO., LTD., THE DOSHISHAInventors: Naoaki Tsurumi, Yasuhiko Ito, Manabu Tokushige, Tsuyoshi Satomi, Tokujiro Nishikiori, Hiroyuki Tsujimura
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Patent number: 8054866Abstract: A MC-CDMA transmitter and an MC-CDMA receiver are provided, which use a novel orthogonal spreading code that allows an effect by a delay wave to appear in only a specific user. An MC-CDMA system includes: a transmitter which multiplies a transmitting signal by a sinusoidal signal which has an amplitude of r and is orthogonal as a result that the frequency periods are different among users, in a frequency domain to be spread and split into orthogonal sub-carriers, and multiplexes the sub-carriers; and a receiver for receiving a transmitting signal from the transmitter in a manner that a sinusoidal signal, which has an amplitude of r and is orthogonal as a result that the frequency periods are different among users, is multiplied by the transmitting signal in a frequency domain, and the resultant is inversely spread.Type: GrantFiled: January 17, 2007Date of Patent: November 8, 2011Assignee: The DoshishaInventors: Hideichi Sasaoka, Hisato Iwai, Yusuke Miyamoto