Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.
Abstract: The present invention provides an aluminum alloy material which has high resistance to flexural fatigue and prescribed elongation characteristics; contains, in terms of mass %, 0.20-1.80% Mg, 0.20-2.00% Si, and 0.01-1.50% Fe; and further contains at least one element selected from among Cu, Ag, Zn, Ni, Ti, Co, Au, Mn, Cr, V, Zr, and Sn in a total amount of 0.00-2.00%, with the remainder made up of Al and inevitable impurities. The aluminum alloy material has a fibrous metal structure in which crystal grains extend in one direction.
Abstract: The present disclosure provides a base film for an adhesive tape used in a manufacturing process of a semiconductor that can be used in a plurality of processes including a reflow process. A thermoplastic resin film, which is a resin composite of a first resin component that is a crystalline thermoplastic resin having a melting point of 290° C. or higher and a second resin component that has a glass transition temperature of 150° C. or higher, wherein the crystallinity of the first resin component is more than 5.0% of the entire resin composite.
Abstract: A rotary connector device includes a fixed body, a rotation body, and a connector. The rotation body is rotatable about a rotation axis with respect to the fixed body. The connector includes a cover, a conductor, and a holding member. The cover includes a first wall and a space therein. The first wall extends from the rotation body in an axial direction substantially parallel to the rotation axis. The holding member is attached to the cover in the space and holds the conductor. The holding member includes, in the first wall, an exposed portion exposed to an outside of the space. The cover and the holding member include a restriction structure to restrict foreign matter from entering the space through the exposed portion. The restriction structure includes a first protrusion that protrudes in a direction substantially orthogonal to the first wall and a first recess in which the first protrusion is fitted.
November 13, 2020
March 4, 2021
FURUKAWA ELECTRIC CO., LTD., FURUKAWA AUTOMOTIVE SYSTEMS INC.
Abstract: A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.
August 19, 2020
March 4, 2021
FUJI ELECTRIC CO., LTD., FURUKAWA ELECTRIC CO., LTD.
Abstract: An optical fiber terminal structure is comprised of a plurality of optical fibers, a plurality of high-? optical fibers connected to the optical fibers, respectively, and a capillary. The capillary has a hole in which the optical fibers and the high-? optical fibers are inserted, and the optical fibers and the high-? optical fibers together are fixed in the hole. Connection parts of each of the optical fibers and the high-? optical fibers are also positioned inside the capillary, and end surfaces of the high-? optical fibers are exposed so that adjacent high-? optical fibers are in contact with each other in an end surface of the capillary.
Abstract: A light source for Raman amplification to Raman-amplify signal light includes: plural incoherent light sources that output incoherent light; plural pumping light sources that output second-order pumping light; an optical fiber for Raman amplification to Raman-amplify the incoherent light with the second-order pumping light, and outputs the amplified incoherent light; and an output unit connected to the optical transmission fiber, receiving the amplified incoherent light, and outputting the amplified incoherent light as first-order pumping light having a wavelength that Raman-amplifies the signal light to the optical transmission fiber.
Abstract: A carbon nanotube composite includes a carbon nanotube bundle including a plurality of carbon nanotubes that are bundled, each of the plurality of carbon nanotubes having a single-walled or multi-walled structure, and a group of elements of other type introduced in an aligned manner into a gap portion between the plurality of carbon nanotubes. In the carbon nanotube bundle, a ratio of the number of carbon nanotubes having a double-walled or triple-walled structure to the number of the plurality of carbon nanotubes is greater than or equal to 50%, and other-type element bonded bodies constituting the group of elements of other type are arranged in line along a longitudinal direction of the carbon nanotubes.
Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.
Abstract: A secondary battery state detection device for detecting the state of a secondary battery includes at least one processor and at least one memory that is communicably connected to the at least one processor. The at least one processor reads a set of instructions stored in the at least one memory, and executes detection processing in which a charging voltage is detected, the charging voltage being generated when an alternator that generates an adjustable voltage charges the secondary battery; computation processing in which a charging resistance is computed as an internal resistance of the secondary battery when the alternator charges the secondary battery; and estimation processing in which a state of charge of the secondary battery is estimated on the basis of the charging voltage detected by the detection processing and on the charging resistance computed by the computation processing.
March 21, 2019
Date of Patent:
February 23, 2021
FURUKAWA ELECTRIC CO., LTD., FURUKAWA AUTOMOTIVE SYSTEMS INC.
Abstract: A screening apparatus for an optical fiber includes a delivery unit that delivers an optical fiber; a screening unit that applies tension to the delivered optical fiber to perform screening of the optical fiber; a winding unit that winds the optical fiber after screening; and a static electricity removing unit that removes static electricity of the optical fiber traveling on the predetermined passage, the static electricity removing unit being disposed along a predetermined passage of a passage of the optical fiber from an exit side of the screening unit to an entry side of the winding unit.
Abstract: Brightness profile data having a number of dimensions is extracted based on image data in a radial direction of an optical fiber, the brightness profile data representing features for each rotation angle of the optical fiber. Machine learning uses training data to create a prediction model that based on the brightness profile data determines a rotation angle of each pair of optical fibers is. The pair of optical fibers are rotated to the determined rotation angle and then fusion spliced. The training data indicates a correspondence relationship between the rotation angle of the optical fiber and brightness profile in the radial direction for each rotation angle of the optical fiber. The prediction model can determine a rotation angle of an arbitrary optical fiber based on brightness profile data of the arbitrary optical fiber.
Abstract: A semiconductor laser device is a vernier-type wavelength-tunable semiconductor laser device including an optical resonator, constituted by first and second reflective elements having reflection comb spectra in which reflection peaks are arranged on a wavelength axis in a substantially periodic manner and having mutually different periods. At least one of the first and second reflective elements has a sampled grating structure having a reflection comb spectrum in which reflection phases at the respective reflection peaks are aligned and the intensity of a reflection peak outside a set laser emission wavelength bandwidth is lower than the intensity of a reflection peak within the laser emission wavelength bandwidth.
Abstract: A Fe-based shape memory alloy material, containing 25 atom % to 42 atom % of Mn, 9 atom % to 13 atom % of Al, 5 atom % to 12 atom % of Ni, and 5.1 atom % to 15 atom % of Cr, with the balance being Fe and unavoidable impurities; a method of producing the same; and a wire material and sheet material composed of the alloy material.
January 18, 2019
Date of Patent:
February 16, 2021
TOHOKU UNIVERSITY, FURUKAWA TECHNO MATERIAL CO., LTD., FURUKAWA ELECTRIC CO., LTD.
Abstract: A surface side is irradiated with an SF6 gas plasma to etch a semiconductor wafer which has been peeled off in street portions, and divide the semiconductor wafer into a plurality of individual semiconductor chips. A removing agent is subsequently supplied from the surface side. At that time, it is preferable that the semiconductor wafer divided into the plurality of chips is rotated at high speed. Accordingly, a mask material layer remaining on the surface is removed by the removing agent. Moreover, the removing agent is preferably an organic solvent, and more preferably, methyl ethyl ketone, ethanol, and ethyl acetate, or a combination of these.
Abstract: A mask-integrated surface protective film, containing: a substrate film, and a mask material layer provided on the substrate film; wherein the mask material layer is an ethylene-vinyl acetate copolymer resin, an ethylene-methyl acrylate copolymer resin, or an ethylene-butyl acrylate copolymer resin; and wherein the thickness of the mask material layer is 50 ?m or less.
January 11, 2018
Date of Patent:
February 9, 2021
FURUKAWA ELECTRIC CO., LTD.
Hirotoki Yokoi, Tomoaki Uchiyama, Yoshifumi Oka
Abstract: A coated carbon nanotube wire for a coil includes: a carbon nanotube wire, the carbon nanotube wire being composed of a plurality of carbon nanotube aggregates each constituted of a plurality of carbon nanotubes, or being composed of a plurality of carbon nanotube element wires each constituted of a plurality of carbon nanotubes; and a coating layer coating the carbon nanotube wire, wherein each of the carbon nanotube aggregates contacts one or more other adjacent carbon nanotube aggregates, or each of the carbon nanotube element wires contacts one or more other adjacent carbon nanotube element wires.
Abstract: A welding method includes: arranging a workpiece containing copper in a region to be irradiated with laser light; and irradiating the workpiece with the laser light to melt and weld an irradiated portion of the workpiece. Further, the laser light is formed of a main beam and a plurality of sub beams, and a ratio of power of the main beam to total power of the plurality of sub beams is 72:1 to 3:7.
Abstract: This aluminum alloy material has an alloy composition which comprises at least one among 0.05-1.50 mass % of Fe, 0.01-0.15 mass % of Si, 0.01-0.3 mass % of Cu, and 0.01-1.5 mass % of Mg, with the balance being Al and inevitable impurities, and has a fibrous metal structure in which crystal grains extend in one direction. In a cross section parallel to said one direction, the average value of the dimensions of the crystal grains in a direction perpendicular to the longitudinal direction thereof is 800 nm or less, and the primary surface of the aluminum alloy material has a crystal orientation distribution in which the ratio H (K100/K111) of K100 to K111 is at least 0.15 as determined by the X-ray pole figure method, where K100 is the sum of the diffraction intensities resulting from crystals in which <100> is oriented in the longitudinal direction, and K111 is the sum of the diffraction intensities resulting from crystals in which <111> is oriented in the longitudinal direction.