Abstract: A beam source has a plasma generating chamber, an antenna for generating plasma in the plasma generating chamber, a first electrode disposed in the plasma generating chamber, and a second electrode disposed in the plasma generating chamber. Both of the antenna and the second electrode face the first electrode. The beam source also includes a power supply for applying a voltage between the first electrode and the second electrode to extract particles from the plasma generated by the antenna. The beam source applies various kinds of beams having a large diameter, such as a positive ion beam, a negative ion beam, and a neutral particle beam, uniformly to a workpiece.

Abstract: There has been a problem in conventional Si-type floating-gate type nonvolatile semiconductor memory devices that the charge retention characteristic is low due to insufficiently large electron affinity of Si, therefore improvement of the memory performances, such as scaling down of a memory cell and increasing operation speed, have been difficult to be achieved due to the essential problem. In order to solve the above problem, in the nonvolatile semiconductor memory device of the present invention, a material having large work function or large electron affinity or a material having a work function close to that of semiconductor substrate or of a control gate, is employed for a floating gate retaining charges. Further, an amorphous material having small electron affinity for an insulating matrix is used.

Abstract: A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.

Abstract: A driving mechanism configured to turn a plate member with respect to a frame member around a predetermined turning axis includes a pair of supporting members supporting the plate member, a pair of actuators provided on both sides with respect to the turning axis and on the same surface side of the plate member. Each of the actuators includes a fixed electrode unit fixed to the frame member and a movable electrode unit fixed to the plate member. The fixed electrode unit includes a substrate, a pair of fixed comb electrodes provided on both surface sides of the substrate. The movable electrode unit includes a pair of movable comb electrodes, each of which engages with the corresponding fixed comb electrode with a gap therebetween. Both pairs of the fixed comb electrode and the corresponding movable comb electrode are configured such that a voltage can be applied therebetween independently.

Abstract: Disclosed is a method of gasifying a biomass, comprising heating a fluidized bed reactor loaded with a catalyst represented by Rh/CeO2/M, where M represents SiO2, Al2O3 or ZrO2, to temperatures lower than 800° C. introducing biomass particles into the fluidized bed reactor from an upper portion thereof, introducing air and steam into the fluidized bed reactor from a lower portion thereof, and allowing the biomass particles to react at the surface of the Rh/CeO2/M catalyst so as to manufacture hydrogen and a syngas.

Abstract: There is disclosed an electron microscope equipped with a magnetic microprobe. The microscope can apply a strong electric field to a local area on a specimen made of a magnetic material. The magnetic flux density per unit area of the microprobe is high. The microscope includes a biprism for producing interference between an electron beam transmitted through the specimen and an electron beam passing through a vacuum. The specimen is held to a holder. The microprobe is made of a magnetic material and has a needle-like tip. The microscope further includes a moving mechanism capable of moving the microprobe toward and away from the specimen.

Abstract: A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).

Abstract: An underlayer made of a III-V semiconductor compound is formed on a given substrate, and a CrSb compound is epitaxially grown on the underlayer by means of MBE method to fabricate a zinc blend type CrSb compound.

Abstract: A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Abstract: On a given substrate are successively formed a buffer layer, a recording layer made of carrier induced ferromagnetic material, a metallic electrode layer via an insulating layer, to complete a nonvolatile solid-state magnetic memory as an electric field effect transistor. For recording, a first electric field is applied to the recording layer via the metallic electrode layer under a given external magnetic field, and then, a second electric field is applied to the recording layer via the metallic electrode layer so that the hole carrier concentration of the recording layer can be reduced lower than at the application of the first electric field, thereby to invert the magnetization of the recording layer and thus, realize recording operation for the recording layer.

Abstract: A spin filter is composed of a first magnetic semiconductor multi-quantum well structure, a second magnetic semiconductor multi-quantum well structure and a non-magnetic semiconductor quantum well structure which is located between the first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure. The first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure are split in spin state. Carriers in down-spin state are penetrated through the first magnetic semiconductor multi-quantum well structure and carriers in up-spin state are penetrated through the second magnetic semiconductor multi-quantum well structure.

Abstract: A first thin film including at least one transition metal selected from the group consisting of Co, Fe and Ni, and a second thin film including at least one platinum group element selected from the group consisting of Pt and Pd are prepared. Then, a multilayered structure where said first thin film and said second thin film are stacked is formed. Then, the multilayered structure is heated at the same time or after the formation of said multilayered structure, thereby to counter-diffuse constituent elements of said first thin film and said second thin film and alloy said at least one transition metal and said platinum group element.

Abstract: A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Abstract: A nuclear spin control device comprises a first semiconducting layer with spin-up carriers, a second semiconducting layer with spin-down carriers; and a third semiconducting layer arranged between the first and the second semiconducting layers. The third semiconducting layer can be tunnelled selectively by the spin-up carriers and the spin-down carriers such that nuclear spin in the third semiconducting layer selectively interacts with the carriers so as to be oriented into a desired direction. The device may be adapted to control the shape of a wave function so as to cover nuclear spins in the third semiconducting layer and propagate information of one nuclear spin to another nuclear spin.

Abstract: A method of producing synthetic fuels by hydrogenating carbon monoxide comprising contacting a feed gas containing carbon monoxide and hydrogen with a metal sulfide catalyst comprising: (1) at least one element selected from the group consisting of Rh, Pd, Pt, and Hf; and optionally (2) solid acid.

Abstract: A spin filter is composed of a first magnetic semiconductor multi-quantum well structure, a second magnetic semiconductor multi-quantum well structure and a non-magnetic semiconductor quantum well structure which is located between the first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure. The first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure are split in spin state. Carriers in down-spin state are penetrated through the first magnetic semiconductor multi-quantum well structure and carriers in up-spin state are penetrated through the second magnetic semiconductor multi-quantum well structure.

Abstract: A polycrystalline silver member is stuck on a given long member made of Hastelloy material or stainless steel material, to make a long base material. Then, an yttrium-based high temperature superconducting film is fabricated in the long base material by a CVD method with applying a magnetic field of preferable 2T or over. Thereby, an yttrium-based high temperature superconducting tape can be provided which can maintain the superconductivity under a higher magnetic field environment.

Abstract: An organic silicon gas having Si—H bond and Si—C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si—H bond and Si—C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC multi-layered film structure.

Abstract: The present invention provides a method of decomposing an ammonia gas, including the step of decomposing an ammonia gas, into a nitrogen gas with use of a composite material as a catalyst. The composite material has a carrier made mainly of carbon and at least one kind of an active element which is supported by the carrier and selected from alkaline earth metals and transition metals.

Abstract: A method of producing synthetic fuels by hydrogenating carbon monoxide comprising contacting a feed gas containing carbon monoxide and hydrogen with a catalyst comprising: (1) a supported metal sulfide comprising Pd and at least one promoter selected from the group consisting of alkali metal, alkaline earth metal, and rare earth elements, and optionally (2) solid acid.