Abstract: There is provided a micromirror which includes a holding unit, a mirror that is held by the holding unit to be pivotable about a rotation axis of the mirror, a first fixed electrode group including a plurality of electrodes fixed to the holding unit, a second fixed electrode group including a plurality of electrodes fixed to the holding unit, a first movable electrode group including a plurality of electrodes fixed to the mirror and located adjacently to the first fixed electrode group, and a second movable electrode group including a plurality of electrodes fixed to the mirror and located adjacently to the second fixed electrode group.

Abstract: A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the source region and the drain region, a tunnel insulating film formed in contact with the channel-forming region, a charge retention layer formed adjacently to the tunnel insulating film, a gate insulating film formed adjacently to the charge retention layer, and a control gate formed adjacently to the gate insulating film. The charge retention layer includes an insulating matrix having, per nonvolatile semiconductor memory device, one conductive nano-particle which is made of at least one single-element substance or chemical compound that functions as a floating gate.

Abstract: A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IW flows in the film surface direction of the second element portion for writing the magnetic information and a current IR flows in the film thickness direction of the first element portion for reading the magnetic information.

Abstract: A carbon nanotube composite material contains a carbon nanotube and a continuous layer of a metal covering the inner surface of the carbon nanotube. It is produced by forming a metallic matrix layer and treating the metallic matrix layer to form plural nanoholes in the metallic matrix layer to thereby form a nanohole structure, the nanoholes extending in a direction substantially perpendicular to the plane of the metallic matrix layer; forming carbon nanotubes inside the nanoholes; and covering inner surfaces of the carbon nanotubes with a continuous layer of a metal. It has a well controlled small size, has excellent and uniform physical properties, is resistant to oxidation of the metal with time, is highly chemically stable, has good durability enabling repetitive use, has good coatability, high wettability and dispersibility with other materials, is easily chemically modified, is easily handled and is useful in various fields.

Abstract: A method of forming a metallic glass includes the steps of, molding a metallic glass into a pre-formed semi-article by performing pre-forming by die casting, and performing warm press forming on the pre-formed semi-article by heating the pre-formed semi-article to a supercooled liquid temperature range.

Abstract: Provided is a blood diagnosis method of providing a diagnostic marker which is general and which contributes to dialysis treatment and evaluation of clinical effects. The method includes a step of collecting blood samples from a dialysis patient before and/or after dialysis and a step of performing a gene diagnosis based on mRNA markers on the collected blood samples. The mRNA markers are previously identified on the basis of correlations between clinical data and mRNA profiles.

Abstract: To extend the temperature range for a stable operation without mode hopping and obtain a stable laser oscillation, a laser oscillator is provided. The laser oscillator includes: an optical circulator in which light incident on a first port is exited from the second port, light incident on the second port is exited from a third port, and light incident on a fourth port is exited from the first port; a first optical amplification fiber that amplifies the light exited from the third port because of being excited by an exciting light and injects the same into the first port; a reflective optical filter that reflects light with a predetermined wavelength among the light exited from the second port and injects the same into the second port again; and an pump light source that generates an exciting light to excite the first optical amplification fiber.

Abstract: A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

Abstract: Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1 and the average composition of the discrete regions is represented by Si1-x2Gex2 where X1<X<X2. Also, provided is a solar-cell polycrystal satisfying high light-absorption efficiency and low cost by using the multi-element polycrystal, a solar cell and a method of manufacturing the solar cell.

Abstract: There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide.

Abstract: A diecast machine comprises: a sleeve extending in a vertical direction; a plunger moving upward in the vertical direction inside the sleeve; a mold disposed above an upper side of the sleeve; and a metal material heater configured to heat a metal material disposed on the plunger and melting the metal material.

Abstract: There is provided a micromirror, which is provided with a reflection mirror, a first pair of torsion bars formed to protrude from the reflection mirror, a first supporting frame that supports the reflection mirror such that the reflection mirror is torsionally rotatable about a first rotation axis via the first pair of torsion bars, a second pair of torsion bars formed to protrude from the first supporting frame in a direction substantially perpendicular to a direction in which the first pair of torsion bars are extended, and a second supporting frame that supports the first supporting frame such that the first supporting frame is torsionally rotatable about a second rotation axis substantially perpendicular to the first rotation axis via the second pair of torsion bars. In this configuration, each of the second pair of torsion bars includes two separate conductive members.

Abstract: A diecast machine comprises: a sleeve extending in the vertical direction; a plunger moving upward in the vertical direction inside the sleeve; a mold disposed above an upper side of the sleeve; a case member constituted of a nonconductive member, which covers at least a lower end of the sleeve and forms a closed space including the lower end of the sleeve; a communicating pipe connecting the inside of the closed space to the outside of the closed space; and high-frequency induction coil configured to heat metal material disposed on the plunger from the outside of the case member and melt the metal material.

Abstract: There is disclosed an electron microscope equipped with a magnetic microprobe. The microscope can apply a strong electric field to a local area on a specimen made of a magnetic material. The magnetic flux density per unit area of the microprobe is high. The microscope includes a biprism for producing interference between an electron beam transmitted through the specimen and an electron beam passing through a vacuum. The specimen is held to a holder. The microprobe is made of a magnetic material and has a needle-like tip. The microscope further includes a moving mechanism capable of moving the microprobe toward and away from the specimen.

Abstract: There has been a problem in conventional Si-type floating-gate type nonvolatile semiconductor memory devices that the charge retention characteristic is low due to insufficiently large electron affinity of Si, therefore improvement of the memory performances, such as scaling down of a memory cell and increasing operation speed, have been difficult to be achieved due to the essential problem. In order to solve the above problem, in the nonvolatile semiconductor memory device of the present invention, a material having large work function or large electron affinity or a material having a work function close to that of semiconductor substrate or of a control gate, is employed for a floating gate retaining charges. Further, an amorphous material having small electron affinity for an insulating matrix is used.

Abstract: A working rod with a tip end extending into a vacuum process chamber and moving in the axial direction, two static-pressure gas bearings supporting the rod in the non-contact manner, and an internal moving body of a magnet coupling type driving mechanism driving the rod are housed in a rod housing cylindrical portion leading to the vacuum process chamber, and an exhaust portion by suction is provided at a part of the rod housing cylindrical portion so that the pressure of the rod housing cylindrical portion is lowered than the pressure of the vacuum process chamber by the exhaust from the exhaust portion.

Abstract: A diecast machine comprises: a sleeve extending in the vertical direction; a plunger moving upward in the vertical direction inside the sleeve; a mold disposed above an upper side of the sleeve; a case member constituted of a nonconductive member, which covers at least a lower end of the sleeve and forms a closed space including the lower end of the sleeve; a communicating pipe connecting the inside of the closed space to the outside of the closed space; and high-frequency induction coil configured to heat metal material disposed on the plunger from the outside of the case member and melt the metal material.

Abstract: An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4). A first collimated neutral particle beam is generated and applied to the workpiece (X) for etching a surface of a processing layer (60) of the workpiece (X).

Abstract: A plasma processing apparatus that passes a microwave, which is introduced into a waveguide, through a slot and propagates the microwave to a dielectric, converts a predetermined gas supplied into a processing chamber into plasma, and applies plasma processing to a substrate, in which a plurality of the waveguides are disposed side by side, a plurality of dielectrics are provided for each of the waveguides, and one slot, or two or more slots is or are provided for each of the dielectrics, is provided. The area of each of the dielectrics can be made extremely small, and a microwave can be reliably propagated into the entire surface of the dielectric. A thin support member that supports the dielectric can be used, a uniform electromagnetic field can be formed in an entire area above the substrate, and uniform plasma can be generated in the processing chamber.

Abstract: By measuring, for an ultra-low-expansion glass material, the frequency dependence of acoustic velocities and attenuation coefficients of bulk waves (longitudinal waves and shear waves), and the density, its fundamental acoustic properties are revealed, and a standard specimen for use in system calibration is prepared. By an absolute calibration method using the standard specimen, absolute values for both the LSAW and LSSCW velocities are obtained. Moreover, there are obtained relationships for the acoustic properties and the coefficient of thermal expansion to evaluate the coefficient of thermal expansion from the acoustic properties. In case there is a distribution of characteristics due to periodic striae, an accurate acoustic property distribution in the substrate can be ascertained and an evaluation performed, by selecting for the substrate a cutting angle with respect to the striae plane.