Patents Assigned to Tohoku University
  • Publication number: 20100155952
    Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.
    Type: Application
    Filed: October 30, 2009
    Publication date: June 24, 2010
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Akihiro Shibatomi
  • Publication number: 20100140727
    Abstract: The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.
    Type: Application
    Filed: December 4, 2009
    Publication date: June 10, 2010
    Applicants: Tohoku University, Fuji Electric Device Technology Co., Ltd.
    Inventors: Takehito SHIMATSU, Hideo SATO, Osamu KITAKAMI, Satoshi OKAMOTO, Hajime AOI, Hiroyasu KATAOKA
  • Publication number: 20100140536
    Abstract: A gallium nitride-based material prepared by a vertical Hydride Vapor Phase Epitaxial Growth method which has thermal conductivity of at least 2.8×102 W/m·K at 25° C. is provided.
    Type: Application
    Filed: February 17, 2010
    Publication date: June 10, 2010
    Applicants: Tohoku University, Mitsubishi Chemical Corporation
    Inventors: Hiroyuki SHIBATA, Yoshio Waseda, Kenji Shimoyama, Kazumasa Kiyomi, Hirobumi Nagaoka
  • Publication number: 20100126848
    Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.
    Type: Application
    Filed: October 6, 2006
    Publication date: May 27, 2010
    Applicants: Tohoku University, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Patent number: 7723637
    Abstract: The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: May 25, 2010
    Assignees: Tohoku University, Future Vision Inc.
    Inventors: Tadahiro Ohmi, Masaki Hirayama, Takahiro Horiguchi
  • Publication number: 20100112583
    Abstract: Provided is a blood diagnosis method and a dialysis machine, using a diagnostic marker which is versatile and which can contribute to the improvements in dialysis treatment and the evaluation of clinical effects, the method including a step for collecting a blood sample from a dialysis patient before and after dialysis; and a step for making a diagnosis regarding the collected blood sample based on a biomarker, wherein the biomarker is identified in advance based on the correlation between the urea clear space (CS) or the cellular membrane clearance (Kc) and profiles of mRNA or proteins.
    Type: Application
    Filed: October 27, 2009
    Publication date: May 6, 2010
    Applicants: Yokogawa Electric Corporation, Tohoku University
    Inventors: Eiichiro ICHIISHI, Taisuke Baba, Yumiko Ishizaki, Makoto Ishizaki, Kazuhisa Fukushima, Tsuneji Sawai
  • Publication number: 20100108941
    Abstract: To simultaneously overcome a drawback in that proceeding of a solid phase carbonization reaction requires high temperature and a drawback in that the reaction requires use of expensive materials. A method for producing a carbide of a Group IVA, VA, or VIA transition metal in the periodic table and/or a composite carbide of the transition metal and iron, the method including the step of co-milling a ferroalloy containing a Group IVA, VA, or VIA transition metal in the periodic table and incidental impurities and a carbon material mainly composed of carbon in a vacuum or an atmosphere of an inert gas to effect a solid phase reaction between the ferroalloy and the carbon material.
    Type: Application
    Filed: March 18, 2008
    Publication date: May 6, 2010
    Applicants: JFE Mineral Company, Ltd., Tohoku University
    Inventors: Hidetaka Suginobe, Takahiro Shiokawa, Nobuaki Sato, Fumio Saito, Shigeru Suzuki, Junya Kano
  • Patent number: 7708844
    Abstract: A method for forming a metallic glass, which comprises a step of subjecting a metallic glass to a rough forming by die casting, to prepare a roughly formed article, and a step of heating the roughly formed article to a temperature region corresponding to an undercooled liquid thereof, followed by subjecting the heated article to warm press forming.
    Type: Grant
    Filed: May 27, 2005
    Date of Patent: May 4, 2010
    Assignees: NGK Insulators, Ltd., Tohoku University
    Inventors: Naokuni Muramatsu, Ken Suzuki, Akihisa Inoue, Hisamichi Kimura
  • Patent number: 7703656
    Abstract: An object of the present invention is to provide a friction stir welding tool which enables friction stir welding of a wide range of materials, from low-melting temperature metallic materials including aluminum to high-melting temperature metallic materials including steel. An entire friction stir welding tool or a tool tip including a pin is made of Mo alloy having a dual phase microstructure of Mo and intermetallic compound Mo5SiB2. It is desirable that the Mo alloy be composed of 6.0 to 10.0 mol % of Si, 10.0 to 20.0 mol % of B, and 20 to 60% of Mo-phase volume content. This Mo alloy tool has excellent high-temperature strength and wear-resistance properties and hardly deform and wear when used for the welding of steel.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: April 27, 2010
    Assignees: Hitachi, Ltd., Tohoku University
    Inventors: Seung Hwan Park, Satoshi Hirano, Yutaka Sato, Kyosuke Yoshimi, Hiroyuki Kokawa
  • Patent number: 7688623
    Abstract: The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal.
    Type: Grant
    Filed: January 8, 2008
    Date of Patent: March 30, 2010
    Assignees: Hitachi, Ltd., Tohoku University
    Inventors: Sadamichi Maekawa, Saburo Takahashi, Hiroshi Imamura, Masahiko Ichimura, Hiromasa Takahashi
  • Publication number: 20100065967
    Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.
    Type: Application
    Filed: September 15, 2009
    Publication date: March 18, 2010
    Applicants: National University Corporation Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Akihiro Shibatomi
  • Patent number: 7670445
    Abstract: A titanium alloy contains vanadium, from 10 to 20% by weight; aluminum, from 0.2 to 10% by weight; and a balance essentially titanium, and the alloy has a microstructure including a martensite phase. Alternatively, the titanium alloy contains vanadium, from 10 to 20% by weight; aluminum, from 0.2 to 10% by weight; and a balance essentially titanium, and the alloy has a microstructure including a ? phase capable of transforming into a martensite phase by cold working or cooling under a room temperature.
    Type: Grant
    Filed: January 17, 2007
    Date of Patent: March 2, 2010
    Assignees: Nissan Motor Co., Ltd., Tohoku University
    Inventors: Fumihiko Gejima, Takuro Yamaguchi, Shuji Hanada, Hiroaki Matsumoto, Sadao Watanabe
  • Publication number: 20100045887
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Application
    Filed: August 13, 2009
    Publication date: February 25, 2010
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 7667276
    Abstract: There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: February 23, 2010
    Assignees: Advantest Corporation, National University Corporation Tohoku University
    Inventors: Tadahiro Ohmi, Koji Kotani, Kazuyuki Maruo, Takahiro Yamaguchi
  • Publication number: 20100032844
    Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
    Type: Application
    Filed: November 8, 2007
    Publication date: February 11, 2010
    Applicants: National University Corporation Tohoku University, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Seiji Yasuda, Atsutoshi Inokuchi, Takaaki Matsuoka, Kohei Kawamura
  • Publication number: 20100018614
    Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
    Type: Application
    Filed: September 23, 2009
    Publication date: January 28, 2010
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Publication number: 20100015330
    Abstract: A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.
    Type: Application
    Filed: September 23, 2009
    Publication date: January 21, 2010
    Applicants: National University Corporation Tohoku University, Advanced Interconnect Materials LLC
    Inventor: Junichi Koike
  • Publication number: 20100001744
    Abstract: [Problem] To precisely measure a standing wave to be an indication for comprehending a guide wavelength ?g or the like in a waveguide. [Means for Solving] A distribution of temperatures is detected in a conductive member forming at least a part of pipe walls of a waveguide with respect to a longitudinal direction of a waveguide which propagates an electromagnetic wave, and a standing wave generated in the waveguide is measured based on the temperature distribution. The temperature distribution in the conductive member with respect to the longitudinal direction of the waveguide can be measured precisely with a plurality of temperature sensors disposed along the longitudinal direction of the waveguide, a temperature sensor which moves along the longitudinal direction of the waveguide, or an infrared camera.
    Type: Application
    Filed: July 18, 2007
    Publication date: January 7, 2010
    Applicants: Tokyo Electron Limited, Tohoku University
    Inventors: Masaki Hirayama, Tadahiro Ohmi
  • Patent number: 7642552
    Abstract: A liquid crystal display device including gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuxMnySizO (0<X<Y, 0<Z<Y).
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: January 5, 2010
    Assignees: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 7637726
    Abstract: A screw vacuum pump includes a gas working chamber formed by a male screw rotor and a female screw rotor respectively including unequal lead screws engaging each other and having a lead angle that continuously changes with the advance of helix and a stator receiving therein both rotors. The stator is provided with a gas inlet port and a gas outlet port that can communicate with one end portion and the other end portion of the working chamber, respectively. The male screw rotor and the female screw rotor have unequal lead screws each of which is formed into a perpendicular-to-axis cross-sectional shape that changes following a continuous change in lead angle with the advance of helix. Alternatively, one of the male screw rotor and the female screw rotor has the unequal lead screw formed into a perpendicular-to-axis cross-sectional shape that is constant. Another has the unequal lead screw formed into a perpendicular-to-axis cross-sectional shape that changes.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: December 29, 2009
    Assignee: Tohoku University
    Inventor: Tadahiro Ohmi