Abstract: The present invention relates to a curable composition for an optical material, containing (A) 100 parts by mass of a radical polymerizable monomer, (B) 0.005 to 0.5 parts by mass of a tetraazaporphyrin compound having a maximum absorption wavelength in a range of 560 nm or more and 620 nm or less, and (C) 0.1 to 10 parts by mass of an ultraviolet absorber having a maximum absorption wavelength in a range of 330 nm or more and 350 nm or less. According to the present invention, it is possible to provide a curable composition for an optical material, capable of being suitably used as a coating material that can easily provide an optical material having good antiglare properties and excellent weather resistance.

Abstract: A silicon etching solution contains: a quaternary ammonium hydroxide represented by the following Formula (1): R11R12R13R14N+·OH? (1) (in the formula, R11, R12, R13, and R14 are each independently an aryl group, a benzyl group, or an alkyl group having 1 to 4 carbon atoms, and the alkyl group, the aryl group, or the benzyl group may have a hydroxy group); a quaternary ammonium salt represented by the following Formula (2) and having 11 to 20 carbon atoms in total: R21R22R23R24N+·X? (2) (in the formula, one of R21, R22, R23, and R24 is an alkyl group having 16 or less carbon atoms, which may have a substituent, each of the remaining three is an alkyl group having 1 or 2 carbon atoms, the alkyl group having 16 or less carbon atoms and the alkyl group having 1 or 2 carbon atoms may have a hydroxy group, and X is at least one selected from the group consisting of BF4, a fluorine atom, a chlorine atom, and a bromine atom); a polyhydroxy compound having 2 to 12 carbon atoms and having two or more hydroxy groups in

Abstract: A takeout jig (1) includes: a support part (20) which is configured to be pulled up to take out a silicon rod (10) and which is configured to support the silicon rod (10) by clamping one or more end portions (15) of the silicon rod (10); one or more first cords (30) which are equal in number to or greater in number than the silicon rod (10) and which are configured to pull up the support part (20); and one or more second cords (40) which are configured to hold the silicon rod (10) by wrapping around the silicon rod (10).

Abstract: Provided are a manufacturing method and a manufacturing apparatus for efficiently manufacturing a halogen oxoacid solution with a high quality and excellent industrial properties. Specifically, a manufacturing method and a manufacturing apparatus of a halogen oxoacid are provided. The manufacturing method and the manufacturing apparatus include continuously supplying an organic alkaline solution and a halogen from a first end to a second end of a reaction tube so that liquid phase parts and/or gas phase parts are alternately and repeatedly provided in a transfer passage of the reaction tube, to perform gas-liquid mixing of the organic alkaline solution and the halogen at the liquid phase parts and/or gas phase parts.

Abstract: A method for effectively removing minute impurities of 1 ?m or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.

Abstract: [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium. [Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

Abstract: Provided are a stable triazolinedione adduct, a method for producing the same, a method for producing an ene compound, and a method for analyzing an ene compound. A triazolinedione adduct that is stable until the time of use and can be reacted while reverting to a triazolinedione compound at the time of use. Specifically, a triazolinedione adduct represented by formula (1). (In the formula, R1 is an organic group, and A is a fused ring of three or more rings including at least one aromatic ring.

Abstract: The present invention relates to a curable composition containing (A) a cyclic molecule that contains three or more side chains each having at a terminal thereof an active hydrogen-containing group, (B) a urethane prepolymer having an iso(thio)cyanate group on each of both terminals of a molecule, (C) a diol, and (D) an amino group-containing monomer. According to the present invention, it is possible to provide a curable composition that gives a cured product having a high abrasion resistance and capable of exhibiting superior mechanical properties, in particular, a curable composition that can give a cured product capable of being suitably used in a polishing pad.

Abstract: The present invention aims to provide a resin composition having excellent photochromic properties and mechanical properties. The present invention relates to a resin composition containing (i) a urethane-based resin having a propylene glycol chain in a molecular chain thereof and (ii) a photochromic compound, wherein the intensity ratio of PMIpst to PMIcp (PMIpst/PMIcp) is 8.0 or more and 40.0 or less when PMIpst indicates the total spectral intensity of 16 ppm or more and 20 ppm or less including the spectral intensity of a carbon atom of a methyl group in the propylene glycol chain as measured by 13C-PST/MAS NMR and PMIcp indicates the total spectral intensity of 16 ppm or more and 20 ppm or less including the spectral intensity of the carbon atom of the methyl group in the propylene glycol chain as measured by 13C-CP/MAS NMR.

Abstract: The hollow microballoon of the invention includes a resin produced by polymerizing a polymerizing composition that contains a cyclic molecule having at least three side chains with a polymerizable functional group introduced into the terminal thereof and a polymerizable monomer other than the cyclic molecule having at least three side chains with a polymerizable functional group introduced into the terminal thereof. According to the invention, there are provided hollow microballoon capable of imparting not only polishing characteristics but also excellent durability to a CMP polishing pad using the hollow microballoon.

Abstract: Composite oxide fine particles are produced by sol-gel method under conditions in which coarse particles and aggregated particles are unlikely to be generated, and the composite oxide fine particles are further wet-filtered using a filter to remove the coarse particles and the aggregated particles. Then, a salt is added to a dispersion of the composite oxide fine particles to produce weak aggregates of the composite oxide fine particles in the dispersion. A solid content is separated from the dispersion of the composite oxide fine particles containing the aggregates, and then dried. The solid content is easily made finer because no firm aggregates are generated during the drying. That is, composite oxide fine particles containing no coarse particles and aggregated particles are obtained. Use of a known cracking means can further reduce the amount of coarse particles.

Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

Abstract: The curable composition of the present invention contains (A) a cyclic monomer having both a polymerizable functional group and an ionic functional group in the molecule and (B) a polymerizable monomer having a polymerizable functional group capable of being polymerized with the polymerizable functional group of the cyclic monomer (A). The present invention can provide a curable composition that has easy handleability becoming a cured article that has high abrasion resistance and enhanced hydrophilicity without impairing the mechanical characteristics, and particularly can provide a curable composition becoming a cured article that can be favorably used as a polishing pad.

Abstract: A method for producing a semiconductor treatment liquid used for treating a resin having an ether bond, the method comprising: heating a phosphoric acid-containing solution to 100° C. or higher and 400° C. or lower to produce a heated solution; cooling the heated solution to 5° C. or higher and 95° C. or lower to produce a cooled solution; and mixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution.

Abstract: Provide is a porous spherical silica useful as a polish and as a cosmetic material. The porous spherical silica is such that less impurities are contained therein, the particle size distribution thereof is narrow, the D50 thereof is within a predetermined range, and the pore volume thereof is within a predetermined range, the D50 thereof is 2 to 200 ?m, the D10/D90 thereof is at least 0.3, the pore volume thereof is 0.5 mL/g to 8 mL/g, the arithmetic mean value of the breaking compressive test forces of specimens of ten particles is 1.0×101 to 1.0×102 mN, and the alkali metal content thereof is at most 50 ppm. The porous spherical silica can be produced by forming a W/O emulsion using a fumed silica dispersion as an aqueous phase, and pH-adjusting or heating to gelate this emulsion, and thereafter collecting and drying the resultant.

Abstract: A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.

Abstract: The present invention relates to a urethane resin obtained by reacting a polymerizable composition containing at least a urethane prepolymer (B2) having an iso(thio)cyanate group at an end of a molecule thereof, which is obtained by reacting a bifunctional active hydrogen-containing compound (C1) having two groups having active hydrogen in a molecule thereof and a bifunctional iso(thio)cyanate group-containing compound (B1) having two iso(thio)cyanate groups in a molecule thereof, a polyrotaxane (A) having a composite molecular structure formed by an axial molecule and a plurality of cyclic molecules clathrating the axial molecule, in which side chains having a group having active hydrogen are introduced into at least a part of the cyclic molecules, and a polyfunctional active hydrogen-containing compound (C2) other than the polyrotaxane (A) and having three or more groups having active hydrogen in a molecule thereof.

Abstract: Provided is a method to recycle valuable materials included in a photovoltaic module having a resin back sheet or the like, for efficiently and easily recovering the valuable materials by removing the resin components from the photovoltaic module. The method of recovering valuable materials from a photovoltaic module, includes: a loading step of loading a photovoltaic module (X) having a resin back sheet and a sealing resin layer on a heat-resistant porous molded body (A) with the back sheet surface facing down; and a heating step of heating a load including the photovoltaic module (X) and the porous molded body (A) in a heating furnace in an oxidizing atmosphere to melt and then combust the resin components.

Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.