Abstract: An elastic mat for an alkaline water electrolysis vessel includes: at least one wire net being woven or knitted with a metal wire and having spring elasticity in a thickness direction thereof, wherein the metal wire is a solid wire having a diameter of 0.16 to 0.29 mm, or a stranded wire including a plurality of solid wires each having a diameter of 0.08 to 0.15 mm, or any combination thereof.
Abstract: A method for efficiently producing polysilicon is realized. The present invention is an invention of a method for producing polysilicon by the Siemens process, a chemical reactor being connected to a waste gas processing facility via a blocking valve provided to a waste gas pipe, the blocking valve being provided in a vicinity of a waste gas outlet of the chemical reactor, the method including the step of cooling a waste gas between the waste gas outlet of the chemical reactor and the blocking valve, with use of a cooler of an indirect cooling type.
Abstract: A gas production apparatus including: an electrolysis vessel; first and second electrolyte circulation systems; and an electrolyte exchanger, the first/second electrolyte circulation system including: a first/second circulation tank receiving and storing a first/second electrolyte flowing out from an anode chamber/a cathode chamber; and a first/second circulation pump supplying the first/second electrolyte to the anode chamber/the cathode chamber, the electrolyte exchanger transferring part of the first electrolyte existing in the first electrolyte circulation system into the second electrolyte circulation system on one hand, and transferring part of the second electrolyte existing in the second electrolyte circulation system into the first electrolyte circulation system on the other hand.
Abstract: A group III nitride single crystal substrate comprises: a first main face; and a first back face opposite to the first main face, wherein an absolute value of a radius of curvature of the first main face of the substrate is 10 m or more; an absolute value of a radius of curvature of a crystal lattice plane at a center of the first main face of the substrate is 10 m or more; and a 1/1000 intensity width of an X-ray rocking curve of a low-incidence-angle face at the center of the first main face of the substrate is 1200 arcsec or less.
Abstract: A crushed polycrystalline silicon lump is provided in which a surface metal concentration is 15.0 pptw or less and preferably 7.0 to 13.0 pptw, and in the surface metal concentration, a surface tungsten concentration is 0.9 pptw or less and preferably 0.40 to 0.85 pptw, and a surface cobalt concentration is 0.3 pptw or less and preferably 0.04 to 0.08 pptw.
Abstract: A method for producing halogen oxyacid, which includes a step of continuously supplying and mixing an organic alkali solution and a halogen and continuously collecting a reaction solution containing halogen oxyacid, and an production apparatus of halogen oxyacid, which includes a reactor, a means of supplying an organic alkali solution to the reactor, a means of supplying a halogen to the reactor, and a means of collecting a reaction solution for taking out the reaction solution from the reactor, in which the organic alkali solution and the halogen are continuously supplied by the means of supplying an organic alkali solution and the means of supplying a halogen, respectively, to the reactor so as to be mixed therein such that a solution containing halogen oxyacid is generated as a reaction solution, and the reaction solution is continuously collected by the means of collecting a reaction solution are provided.
Abstract: A liner for a teat cup of a milking device is provided. The liner has a cylindrical shape and including: a bore part in a cylindrical shell to form a space between an inner surface of the shell and the bore part, and elastically deformable; a mouthpiece part disposed at one end of the bore part and closing one end of the shell, and being configured to allow a teat to be inserted therethrough and provided with a vent; a short milk tube part disposed at the other end of the bore part, closing the other end of the shell, and allowing milk from the teat at the bore part to flow therethrough; and a groove shaped vent line on an inner surface of the liner and extending on the bore part from the vent.
Abstract: A treatment liquid for cleaning a semiconductor wafer is a treatment liquid containing (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.
Abstract: Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 ?mol/L or more and less than 0.001 mol/L; a RuO4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 ?mol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.
Abstract: Provided is a method for efficiently producing ferric citrate hydrate with high purity and various specific surface areas. The method for producing modified ferric citrate hydrate includes a step of bringing a solution containing water, citric acid, and ferric citrate as a material into contact with water-soluble organic solvent.
Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.
Abstract: A ruthenium oxide gas absorbent liquid includes an organic alkali solution containing a ligand and/or an onium salt composed of an onium ion and an anion, at least part of which is a hydroxide ion, wherein the hydroxide ion has a concentration ranging from more than 1×10?7 mol/L to 6 mol/L or less.
Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.
Abstract: Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R1, R2, and R3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X? is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.
Abstract: A silicon core wire for depositing polycrystalline silicon is formed in a gate shape and includes a pair of vertical rod portions and a horizontal portion laterally connecting upper ends of the vertical rod portions, in which ends of the vertical rod portions and the horizontal portion are joined by welding, and a corner junction has a surface metallic concentration of 1 ppbw or less, more specifically, with an iron concentration of 0.2 ppbw or less, a chromium concentration of 0.1 ppbw or less, a nickel concentration of 0.05 ppbw or less, and a titanium concentration of 0.2 ppbw or less.
Abstract: Provided is an analysis method capable of qualitatively determining resins adhering to crushed polysilicon with high sensitivity and further capable of quantitatively determining the resins with high precision. The analysis method comprises removing organic volatile components from crushed polysilicon by heating, then raising a temperature of the crushed polysilicon in a stream of an inert gas, collecting resin decomposition products produced at the heating temperature, and analyzing decomposition products unique to the resins, to thereby identify the types of the resins adhering to the crushed polysilicon. Moreover, it is also possible to prepare a standard curve regarding each of the decomposition products unique to the resins and to determine an adhesion quantity of each of the adhering resins based on the standard curve.
Abstract: An aluminum nitride powder containing a very small amount of coarse particles. An aluminum nitride powder which provides a resin composition having high affinity for resins and high moisture resistance. The aluminum nitride powder has a volume average particle diameter D50 of 0.5 to 7.0 ?m in particle size distribution measured with a laser diffraction scattering particle size distribution meter, a D90/D50 ratio of 1.3 to 3.5 and a BET specific surface area of 0.4 to 6.0 m2/g and classified by removing coarse particles whose particle diameter is more than 5 times as large as D90. When resin paste obtained from this aluminum nitride powder and a resin is measured with a grind gauge, the upper limit particle diameter at which a streak is produced is not more than 5 times as large as D90.
Abstract: A process for reforming the fly ash, including the heating step that heats a raw fly ash powder containing the unburned carbon at a temperature of 780 to 1000° C. to decrease the amount of the unburned carbon contained in the raw fly ash powder; the classifying step that introduces the heat-treated fly ash containing the unburned carbon in decreased amounts obtained through the heating step into a classifying apparatus in the state of being heated at a high temperature so as to separate the fly ash into a coarse powder and a fine powder; the fine powder recovering step that recovers the fine powder of the heat-treated fly ash obtained through the classifying step by using a dust-collecting apparatus; and the milling step that mills the coarse powder of the heat-treated fly ash obtained through the classifying step until a 45 ?m sieve residue becomes not more than 34% by mass, and then recovers the milled powder.
Abstract: To provide a hexagonal boron nitride powder which contains agglomerates, has a maximum torque calculated by measuring in accordance with JIS-K-6217-4 of 0.20 to 0.50 Nm, a DBP absorption rate of 50 to 100 ml/100 g, a tap bulk density of 0.66 to 0.95 g/cm3 and reduced anisotropy of heat conduction and can provide high heat conductivity and dielectric strength to a resin composition produced by filling a resin therewith and a process for producing the powder by carrying out a reduction nitriding reaction using boron carbide.