Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.

Abstract: Silicon carbonitride with excellent dielectric and/or other properties may be used in manufacturing semiconductor devices. The manufacturing often requires etching silicon carbonitride without etching silicon oxide, but there is no known etching solution that sufficiently selectively etches silicon carbonitride containing carbon compared with silicon nitride used for the same purpose. An object of the present invention is to provide: an etching solution with a high etching selectivity ratio of silicon carbonitride to silicon oxide; a method of treating a substrate, the method including a step of bringing the etching solution into contact with the substrate; and a method of manufacturing a semiconductor device, the method including the method of treating a substrate. The object is achieved by an etching solution for etching silicon carbonitride, the etching solution composed of a homogeneous solution containing phosphoric acid, water, and a cerium ion.

Abstract: The present invention aims to provide a method for producing granules for ceramic production, the method having high productivity and making it possible to obtain a ceramic which, when produced by press molding the granules and firing the resulting press molded product, has physical properties kept from lowering. The present invention is characterized by including: a slurry preparation step of preparing a slurry including a mixture containing a powder of an inorganic compound, a binder, and a solvent; a granulation step of introducing the slurry into a spray drying device to form a granulated substance containing the inorganic compound; an exhaust step of exhausting an atmospheric gas within the spray drying device via a cyclone having a surface made of ceramic; and a step of mixing a fine powder, which has been recovered by the cyclone during the exhaust step, with the granulated substance obtained in the granulation step.

Abstract: Provided is a method for analyzing a diene compound including: a triazolinedione adduct heating step of heating a triazolinedione adduct to produce a triazolinedione compound; an ene compound formation step of reacting the triazolinedione compound with a diene compound to obtain an ene compound; and an ene compound analysis step of analyzing the ene compound to quantitative determine the diene compound. Also provided is a method for producing an ene compound, including: a triazolinedione adduct heating step of heating a triazolinedione adduct to produce a triazolinedione compound; and an ene compound formation step of reacting the triazolinedione compound with a diene compound to obtain an ene compound.

Abstract: An object of the present invention is to provide a novel method for producing a ketone derivative, and more specifically, a method for producing a ketone derivative (I) represented by formula (I), including mixing a thioester derivative (II) represented by formula (II), a Grignard reagent (III) represented by formula (III) and a copper salt to form a ketone derivative (I).

Abstract: The invention is a photochromic compound having an indenonaphthopyran skeleton, and the indenonaphthopyran skeleton has an alkenyl group having 10 to 30 carbon atoms, and an oligomer chain group A having 3 or more recurring units selected from a polyalkylene oxide oligomer chain group, a polyester oligomer chain group, a polysiloxane chain group and a polyester polyether oligomer chain group. The invention can provide a photochromic compound capable of expressing excellent photochromic characteristics in various cured products and capable of preventing cured products from becoming cloudy.

Abstract: Provided is a treatment liquid for treating a semiconductor wafer in a semiconductor forming process, the treatment liquid containing (A) a hypobromite ion, (B) a pH buffer, and (C) an onium ion represented by formula (1): (wherein R1, R2, R3, and R4 each independently denote an alkyl group having carbon number from 1 to 25,)

Abstract: Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate. The method of cleaning a group III nitride single crystal substrate having a group III element-polar face, and the nitrogen-polar face opposite the group III element-polar face includes: cleaning the nitrogen-polar face with a detergent including a fluoroorganic compound.

Abstract: A hydrophobic aluminum nitride powder of the present invention has a hydrophobicity of 1 to 45. The carbon content derived from a hydrophobizing agent is in a range of 0.1 to 0.5 mass %, and the hydrophobizing agent is a silane compound.

Abstract: A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (vA?vB)/vB is within the range of ±0.1%, wherein vA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and vB is an average value of peak wave numbers of micro-Raman spectra in the outer region.

Abstract: A microballoon according to the present invention contains, in a surface layer of the microballoon, a polymerizable functional group having reactivity with an iso(thio)cyanate group, and the microballoon has a particle diameter of 10 ?m to 200 ?m. When the microballoon according to the present invention is used in a CMP polishing pad, excellent polishing characteristics and excellent durability of the polishing pad can be exhibited.

Abstract: The present invention relates to a curable composition containing (A) a side chain-containing cyclic molecule in which three or more side chains each having a polymerizable functional group introduced at a terminal are introduced ((A) cyclic polyfunctional monomer), and (B) a polymerizable monomer having a polymerizable functional group polymerizable with the side chain-containing cyclic molecule ((B) another polymerizable monomer). The present invention provides a curable composition from which a cured article having high abrasion resistance and enabling exhibition of excellent mechanical properties and photochromic properties is obtained. In particular, the present invention can provide a curable composition from which a cured article suitable for use as a polishing pad or a photochromic spectacle lens can be obtained.

Abstract: Provided is a method for continuously producing a silicon nitride sintered compact for enabling a continuous production of silicon nitride sintered compacts by sintering using a silicon nitride powder having a high ?-phase rate. A fired compact 1 housed in a firing jig 2 contains a silicon nitride powder having at least 80% of ?-transition rate and 7 to 20 m2/g of specific surface area together with a sintering additive, where the total content of aluminum element is adjusted not to exceed 800 ppm.

Abstract: The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 ?m is not more than 7.0'10?5 mL/cm2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 ?m and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [l/mm].

Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.

Abstract: A primer composition for optical articles includes (A) a urethane prepolymer which is a reaction product of an aromatic polyisocyanate compound and a polyol compound, and which has a reactive group at an end, the reactive group being selected from among an isocyanate group and a hydroxyl group, (B) a light absorbing compound which has a maximum absorption wavelength within the range of from 320 nm to 650 nm (inclusive) and (C) an organic solvent which has a solubility parameter of 8 (cal/cm3)1/2 or more, while containing no active hydrogen.

Abstract: Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate. The method of cleaning a group III nitride single crystal substrate having a group III element-polar face, and the nitrogen-polar face opposite the group III element-polar face includes: cleaning the nitrogen-polar face with a detergent including a fluoroorganic compound.

Abstract: The present invention relates to a photochromic compound including a polyvalent residue on which at least one group having a photochromic moiety is substituted, and at least one long-chain group not containing a photochromic moiety and having a molecular weight of 300 or more is further substituted; and a curable composition containing the same. In accordance with the present invention, it is possible to provide a photochromic compound which has high solubility in a polymerizable compound serving as a matrix while retaining high photochromic characteristics and is hardly affected by the matrix; and a curable composition containing the same.

Abstract: A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (?A??B)/?B is within the range of ±0.1%, wherein ?A is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and ?B is an average value of peak wave numbers of micro-Raman spectra in the outer region.

Abstract: A polycrystalline silicon crushed lump has a surface metal concentration of 15.0 pptw or less, in which a copper concentration is 0.30 pptw or less in the surface metal concentration, and a total concentration of iron and zinc is 2.00 pptw or less in the surface metal concentration, and preferably an iron concentration is 1.25 pptw or less, and a zinc concentration is 0.75 pptw or less.