Abstract: The present invention relates to a microballoon. The microballoon is made of polyurethane (urea). The microballoon is characterized in that an inner surface of the microballoon contains ionic groups. According to the present invention, through use for a CMP polishing pad, affinity with a slurry liquid for polishing is improved, and thus it is possible to provide a microballoon by which good polishing characteristics may be exhibited without lowering the resin strength of a polishing pad.

Abstract: An electrolysis element for alkaline water electrolysis includes: an electroconductive separating wall including a first face and a second face; an anode for generating oxygen; a cathode for generating hydrogen; a first connecting means fixing the anode to the separating wall such that the anode faces the first face of the separating wall at a first distance, and electrically connecting the anode to the separating wall; an electroconductive elastic body supporting the cathode; and a cathode current collector supporting the elastic body, the cathode current collector being fixed to the separating wall, to face the second face of the separating wall at a second distance, and being electrically connected to the separating wall, the first connecting means including: an electroconductive bolt including at least a shaft, wherein the anode is removably fixed to the separating wall by means of the electroconductive bolt.

Abstract: A method for producing isopropyl alcohol is provided in which propylene is hydrated directly with water to produce isopropyl alcohol, the method including: a distillation step in which crude isopropyl alcohol is distilled; and a filtration step in which the isopropyl alcohol obtained in the distillation step is filtered through a filter having an ion-exchange group.

Abstract: The present invention provides a hexagonal boron nitride powder that has a highly reduced content of magnetic foreign bodies and is excellent in electrical insulation, and a production method capable of producing the hexagonal boron nitride powder at low cost. The hexagonal boron nitride powder includes single particles and/or aggregated particles of hexagonal boron nitride and has a total content of Co, Cr, Cu, Fe, Mg, Mn, Ni, Ti, Zn, and Al of not more than 20 ppm. The method for producing the hexagonal boron nitride powder with a reduced content of magnetic foreign bodies includes a plurality of specific steps.

Abstract: The present invention relates to a method for producing a metal nitride, which is a method for synthesizing a metal nitride by igniting a raw material powder containing a metal powder housed in a reaction vessel (2) under a nitrogen atmosphere and propagating nitriding combustion heat of the metal powder to the whole of the housed raw material powder, characterized in that the raw material powder is housed in the reaction vessel (2) as a molded body (1B) having a void ratio of 40 to 70%. According to the present invention, it is possible to provide a method for producing a metal nitride capable of suppressing the occurrence of powder scattering and improving the recovery rate of the metal nitride.

Abstract: The present invention relates to a method for producing a metal nitride by igniting a raw material powder containing a metal powder filled in a reaction vessel under a nitrogen atmosphere and propagating nitriding combustion heat generated by a nitriding reaction of the metal to the whole raw material powder, the method including forming a heat insulating layer made of a material having nitrogen permeability and inert to the nitriding reaction on an upper surface of a layer made of the raw material powder. According to the present invention, it is possible to provide a method for reducing the amount of unreacted metal powder when producing a metal nitride by a combustion synthesis method.

Abstract: The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

Abstract: A method for producing a high-purity hydrogen chloride gas comprises performing a purification process that includes the steps 1) to 3) below on a byproduct hydrogen chloride gas: 1) a crude hydrochloric acid generation step of allowing water to absorb the byproduct hydrogen chloride gas; 2) a volatile organic impurity-removed hydrochloric acid generation step of bringing the crude hydrochloric acid obtained in the step 1) into contact with an inert gas at a liquid temperature of 20 to 45° C. to dissipate volatile organic impurities; and 3) a high-purity hydrogen chloride gas generation step of supplying the volatile organic impurity-removed hydrochloric acid obtained in the step 2) to a distillation column and performing distillation under conditions of a column bottom temperature of higher than 60° C. and 108° C. or lower and a column top temperature of 60° C. or lower to distill out a high-purity hydrogen chloride gas.

Abstract: The present invention is directed to a method for producing a silicon nitride sintered material, the method including heating a molded article, which contains a silicon nitride powder having a ? phase ratio of 80% or more, a dissolved oxygen content of 0.2% by mass or less, and a specific surface area of 5 to 20 m2/g, and a sintering auxiliary containing a compound having no oxygen bond, and which has an overall oxygen content controlled to be 1 to 15% by mass and an aluminum element overall content controlled to be 800 ppm or less, to a temperature of 1,200 to 1,800° C. in an inert gas atmosphere under a pressure of 0 MPa·G or more and less than 0.1 MPa·G to sinter the silicon nitride.

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2 ??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Abstract: A method for producing a polycrystalline silicon rod includes: while energizing a core wire formed of silicon, supplying a polycrystalline silicon deposition raw material gas into a reactor so as to perform gas phase growth of polycrystalline silicon on a surface of the core wire, in which during a period from a completion of cleaning of the surface of the above core wire to an installation of the core wire in the reactor, the silicon core wire is placed in an atmosphere adjusted to a cleanliness of Class 4 to Class 6 as defined in ISO 14644-1. With this method, it is possible to obtain a polycrystalline silicon rod which has a total metal concentration of iron and nickel of 40 pptw or less in terms of elements in a region within 2 mm from an interface between the core wire and polycrystalline silicon deposited on the surface of the core wire.

Abstract: A method for producing microballoons consisting of a polyurethane (urea) produced by an interfacial polyaddition reaction method with a W/O emulsion and having excellent dispersibility is provided. Specifically, a method for producing microballoons, characterized by forming a microballoon dispersion liquid consisting of a polyurethane (urea) by an interfacial polyaddition reaction method with a W/O emulsion and then treating the dispersion liquid with a solution containing a monofunctional active hydrogen compound containing only one active hydrogen group selected from an amino group and a hydroxyl group is provided.

Abstract: An elastic mat for an alkaline water electrolysis vessel includes: at least one wire net being woven or knitted with a metal wire and having spring elasticity in a thickness direction thereof, wherein the metal wire is a solid wire having a diameter of 0.16 to 0.29 mm, or a stranded wire including a plurality of solid wires each having a diameter of 0.08 to 0.15 mm, or any combination thereof.

Abstract: A method for efficiently producing polysilicon is realized. The present invention is an invention of a method for producing polysilicon by the Siemens process, a chemical reactor being connected to a waste gas processing facility via a blocking valve provided to a waste gas pipe, the blocking valve being provided in a vicinity of a waste gas outlet of the chemical reactor, the method including the step of cooling a waste gas between the waste gas outlet of the chemical reactor and the blocking valve, with use of a cooler of an indirect cooling type.

Abstract: A gas production apparatus including: an electrolysis vessel; first and second electrolyte circulation systems; and an electrolyte exchanger, the first/second electrolyte circulation system including: a first/second circulation tank receiving and storing a first/second electrolyte flowing out from an anode chamber/a cathode chamber; and a first/second circulation pump supplying the first/second electrolyte to the anode chamber/the cathode chamber, the electrolyte exchanger transferring part of the first electrolyte existing in the first electrolyte circulation system into the second electrolyte circulation system on one hand, and transferring part of the second electrolyte existing in the second electrolyte circulation system into the first electrolyte circulation system on the other hand.

Abstract: A group III nitride single crystal substrate comprises: a first main face; and a first back face opposite to the first main face, wherein an absolute value of a radius of curvature of the first main face of the substrate is 10 m or more; an absolute value of a radius of curvature of a crystal lattice plane at a center of the first main face of the substrate is 10 m or more; and a 1/1000 intensity width of an X-ray rocking curve of a low-incidence-angle face at the center of the first main face of the substrate is 1200 arcsec or less.

Abstract: A crushed polycrystalline silicon lump is provided in which a surface metal concentration is 15.0 pptw or less and preferably 7.0 to 13.0 pptw, and in the surface metal concentration, a surface tungsten concentration is 0.9 pptw or less and preferably 0.40 to 0.85 pptw, and a surface cobalt concentration is 0.3 pptw or less and preferably 0.04 to 0.08 pptw.

Abstract: A method for producing halogen oxyacid, which includes a step of continuously supplying and mixing an organic alkali solution and a halogen and continuously collecting a reaction solution containing halogen oxyacid, and an production apparatus of halogen oxyacid, which includes a reactor, a means of supplying an organic alkali solution to the reactor, a means of supplying a halogen to the reactor, and a means of collecting a reaction solution for taking out the reaction solution from the reactor, in which the organic alkali solution and the halogen are continuously supplied by the means of supplying an organic alkali solution and the means of supplying a halogen, respectively, to the reactor so as to be mixed therein such that a solution containing halogen oxyacid is generated as a reaction solution, and the reaction solution is continuously collected by the means of collecting a reaction solution are provided.

Abstract: A liner for a teat cup of a milking device is provided. The liner has a cylindrical shape and including: a bore part in a cylindrical shell to form a space between an inner surface of the shell and the bore part, and elastically deformable; a mouthpiece part disposed at one end of the bore part and closing one end of the shell, and being configured to allow a teat to be inserted therethrough and provided with a vent; a short milk tube part disposed at the other end of the bore part, closing the other end of the shell, and allowing milk from the teat at the bore part to flow therethrough; and a groove shaped vent line on an inner surface of the liner and extending on the bore part from the vent.

Abstract: Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 ?mol/L or more and less than 0.001 mol/L; a RuO4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 ?mol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.