Patents Assigned to Tokyo
  • Patent number: 8192796
    Abstract: In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: June 5, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinya, Shouichi Terada, Tsuyoshi Mizuno, Yukihiro Wakamoto
  • Patent number: 8193097
    Abstract: A plasma processing apparatus, for performing a plasma processing on a substrate to be processed by generating a plasma of the processing gas in an evacuable processing chamber, includes an impedance adjusting mechanism. The impedance adjusting mechanism is provided with a resonance circuit formed to allow a radio frequency current to flow into the first electrode; a variable impedance unit installed on a power feed line to the first electrode; a detector for detecting an apparatus state to be used to search a resonance point of the resonance circuit; and a controller for searching a resonance point of the resonance circuit by detecting a signal of the apparatus state of the detector while varying a value of the variable impedance unit in a state where the plasma is formed and then adjusting the value of the variable impedance unit at the resonance point to a reference value.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: June 5, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Taichi Hirano
  • Patent number: 8195336
    Abstract: A pressure regulator for controlling pressure with high response and high accuracy even a flow change occurs on the downstream side. The pressure regulator (1) regulates the rate of inflow into an isothermal pressure vessel (13) for the gas supplied from a gas supply source (10) by means of a servo valve (11) to maintain the constant pressure in the isothermal pressure vessel (13).
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: June 5, 2012
    Assignee: Tokyo Institute of Technology
    Inventors: Kenji Kawashima, Toshiharu Kagawa, Tomonori Kato
  • Patent number: 8193173
    Abstract: The present invention relates to a liver function ameliorant containing orniplabin as an active ingredient thereof.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: June 5, 2012
    Assignee: Tokyo University of Agriculture and Technology TLO Co., Ltd.
    Inventors: Keiji Hasumi, Fumihiko Maeda, Kunitoshi Mitsumori
  • Patent number: 8193007
    Abstract: Provided is a method and system for controlling a fabrication cluster for processing of a substrate in an etch process, the fabrication cluster having equipment settings and process parameters. A correlation of etch stage measurements to actual etch stage data is developed, the etch stage measurements comprising measurements using two or more optical metrology devices and an etch sensor device. An etch stage value is extracted using the developed correlation and the etch stage measurement. If the etch stage measurement objectives are not met, the metrology devices are modified, a different etch sensor device is selected, the etch stage measurements are enhanced, and/or the correlation algorithm is refined. The steps are iterated until the etch stage measurement objectives are met. The extracted etch stage value is used to adjust an equipment setting and/or process parameter of the fabrication cluster.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: June 5, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Manuel Madriaga, Xinkang Tian
  • Patent number: 8192923
    Abstract: A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al- and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.
    Type: Grant
    Filed: September 10, 2007
    Date of Patent: June 5, 2012
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Shigeru Yokoi, Kazumasa Wakiya
  • Patent number: 8192915
    Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: June 5, 2012
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takahiro Dazai, Tomoyuki Hirano, Daiju Shiono, Tasuku Matsumiya
  • Patent number: 8194392
    Abstract: A ceramic material has a perovskite structure and is represented by formula of (1?x)ABO3-xYZO3. In the formula, “x” is a real number that is greater than 0 and is less than 1 each of “A,” “B,” “Y,” and “Z” is one or more kinds selected from a plurality of metal ions M other than a Pb ion and alkali metal ions, “A” is bivalent, “B” is tetravalent, “Y” is trivalent or combination of trivalent metal ions, and “Z” is bivalent and/or trivalent metal ions, or a bivalent and/or pentavalent metal ions.
    Type: Grant
    Filed: July 6, 2010
    Date of Patent: June 5, 2012
    Assignees: Denso Corporation, The Univeristy of Tokyo
    Inventors: Rajesh Kumar Malhan, Naohiro Sugiyama, Yuji Noguchi, Masaru Miyayama
  • Patent number: 8195435
    Abstract: Diffraction modeling of a diffracting structure employing at least two distinct differential equation solution methods. In an embodiment, a rigorous coupled wave (RCW) method and a coordinate transform (C) method are coupled with a same S-matrix algorithm to provide a model profile for a scatterometry measurement of a diffracting structure having unknown parameters. In an embodiment, a rigorous coupled wave (RCW) method and a coordinate transform (C) method generate a modeled angular spectrum of diffracted orders as a prediction for how a diffracting photolithographic mask images onto a substrate.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: June 5, 2012
    Assignees: Tokyo Electron Limited, KLA-Tencor Corporation
    Inventor: Joerg Bischoff
  • Publication number: 20120132367
    Abstract: There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.
    Type: Application
    Filed: November 23, 2011
    Publication date: May 31, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuyuki Tezuka, Kenichi Kato, Atsushi Sawachi, Takamichi Kikuchi, Takanori Mimura
  • Publication number: 20120132615
    Abstract: A manufacturing method for probe card according to the present invention includes following processes. A film is formed on the surface of a circuit board. A connecting terminal and joint member are formed by etching the film, and the surface of the joint member is polished. An inspection contacting structure is assembled. The inspection contacting structure is moved proximity to a circuit board. The lower surface of a contactor and joint member are attached so as to contact the front end of a probe penetrating and passing through the contactor to the connecting terminal.
    Type: Application
    Filed: December 12, 2011
    Publication date: May 31, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Jun MOCHIZUKI
  • Publication number: 20120136140
    Abstract: It is an object of the present invention to provide an anti-cadherin antibody having high antibody-dependent cellular cytotoxicity. The present invention provides an anti-cadherin antibody, which recognizes any one of an upstream region of EC1, a cadherin domain 4 (EC4) and a cadherin domain 5 (EC5), wherein an antibody-dependent cellular cytotoxicity at an antibody concentration of 1 ?g/mL is 30% or more.
    Type: Application
    Filed: April 30, 2010
    Publication date: May 31, 2012
    Applicants: PERSEUS PROTEOMICS INC., THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki Aburatani, Lilin Zhang, Keisuke Ishi, Katsushi Kouda, Aya Sakamoto, Keiko Katsumi, Hiroshi Onishi, Yoko Kayukawa
  • Publication number: 20120135861
    Abstract: The present invention relates to a photocatalytic material having a visible light activity which includes a tungsten-doped titanium oxide or a tungsten/gallium-codoped titanium oxide, and a divalent copper salt and/or a trivalent iron salt supported on a surface of the doped or codoped titanium oxide, and a process for producing the photocatalytic material.
    Type: Application
    Filed: July 29, 2010
    Publication date: May 31, 2012
    Applicants: SHOWA DENKO K.K., THE UNIVERSITY OF TOKYO
    Inventors: Kazuhito Hashimoto, Hiroshi Irie, Huogen Yu, Yasushi Kuroda, Yasuhiro Hosogi
  • Publication number: 20120132897
    Abstract: A diffraction grating having a transparent supporting substrate; and a cured resin layer which is stacked on the transparent supporting substrate and which has concavities and convexities formed on a surface thereof, wherein when a Fourier-transformed image is obtained by performing two-dimensional fast Fourier transform processing on a concavity and convexity analysis image obtained by analyzing a shape of the concavities and convexities formed on the surface of the cured resin layer by use of an atomic force microscope, the Fourier-transformed image shows a circular or annular pattern substantially centered at an origin at which an absolute value of wavenumber is 0 ?m?1, and the circular or annular pattern is present within a region where an absolute value of wavenumber is within a range of 10 ?m?1 or less.
    Type: Application
    Filed: July 16, 2010
    Publication date: May 31, 2012
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, JX NIPPON OIL & ENERGY CORPORATION
    Inventors: Takashi Seki, Suzushi Nishimura, Maki Fukuda, Madoka Fukushima, Satoshi Mmasuyama, Soon Moon Jeong, Hideo Takezoe, Won Hoe Koo
  • Publication number: 20120135612
    Abstract: A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
    Type: Application
    Filed: June 16, 2010
    Publication date: May 31, 2012
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Kenji Matsumoto, Hitoshi Itoh, Hidenori Miyoshi, Shigetoshi Hosaka, Hiroshi Sato, Koji Neishi, Junichi Koike
  • Publication number: 20120132359
    Abstract: An attaching method for attaching a support plate to a surface of a substrate with an adhesive involves the steps of applying an adhesive to the surface of the substrate, heating and thereafter cooling the substrate, positioning centers of the substrate and the supporting plate to coincide with each other, and forming a layered structure by pushing the supporting plate onto the substrate with the adhesive therebetween in a pressure-reduced atmosphere. In the positioning step, after the supporting late has been placed on the substrate, it is possible to finely adjust the alignment of the supporting plate and a semiconductor wafer when attached because the adhesive is applied to the surface of the substrate, and thereafter the substrate is heated and cooled.
    Type: Application
    Filed: February 9, 2012
    Publication date: May 31, 2012
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akihiko NAKAMURA, Atsushi MIYANARI, Yoshihiro INAO
  • Publication number: 20120135148
    Abstract: A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.
    Type: Application
    Filed: November 18, 2011
    Publication date: May 31, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masatoshi Deguchi, Hideo Funakoshi, Toshichika Takei, Norifumi Sato, Wataru Kiyota, Daisuke Ishimaru, Shinichi Machidori, Ikuo Sunaka, Shigenori Kamei
  • Publication number: 20120132109
    Abstract: A diffusing agent composition of an aspect of the invention contains: a condensation product (A) made from a starting material that is an alkoxysilane represented by the following general formula (1): [Chemical Formula 1] R1mSi(OR2)4-m ??(1) where R1 and R2 are an organic group, a plurality of R1s and R2s included in condensation product are identical or different, and m is 0, 1 or 2, the condensation product including an alkoxysilane where m=0 also including at least one alkoxysilane where m is 1 or 2; an impurity diffusion component (C); and an organic solvent (D).
    Type: Application
    Filed: November 22, 2011
    Publication date: May 31, 2012
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Toshiro Morita, Takashi Kamizono
  • Publication number: 20120135469
    Abstract: An object of the present invention is to provide a sugar donating reagent comprising a sugar donor compound other than a sugar nucleotide and an enzyme capable of catalyzing a glycosyl transfer reaction using a sugar donor compound other than a sugar nucleotide. The present invention provides the following: a sugar donating reagent containing a compound of formula (A): wherein R1 is independently selected from hydrogen, or C1-6 alkyl, C2-6 alkenyl, and C2-6 alkynyl in which each of the groups is unsubstituted or substituted with one or more groups selected from OH, F, Cl, Br, I, CN, NO2, and SO2, n is 0, 1, 2, 3, 4 or 5, m is 0 or 1, and X represents a monosaccharide bound via a ? bond on its anomeric carbon; a glycosyltransferase capable of catalyzing a glycosyl transfer reaction using the sugar donor; and a glycosyltransferase gene comprising DNA encoding the glycosyltransferase.
    Type: Application
    Filed: January 21, 2010
    Publication date: May 31, 2012
    Applicant: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Yoshihiro Ozeki, Nobuhiro Sasaki, Kazuo Nagasawa, Masayuki Tera, Yuki Matsuba, Haruka Nakamura, Yutaka Abe
  • Patent number: D661160
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: June 5, 2012
    Assignee: Tokyo Plast International Ltd.
    Inventor: Haresh Velji Shah