Abstract: It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films.

Abstract: There are provided a liquid processing method and a liquid processing apparatus capable of removing a resist film without removing an underlying film when removing the resist film from a substrate on which the underlying film and the resist film are formed in sequence from the bottom and into which ions have been previously implanted. In the liquid processing method capable of processing a substrate by a processing solution, the method includes removing the resist film from the substrate by supplying the processing solution at a temperature of about 120° C. or higher to the substrate. The processing solution includes a sulfuric acid and a nitric acid at a preset ratio, and the substrate has thereon the underlying film and the resist film formed on the underlying film, and ions have been previously implanted into the substrate.

Abstract: A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.

Abstract: The wafer table (31) for holding a wafer (20) having the back surface thereof supported by a mount frame (36) via a dicing film (3) and the front surface thereof with a surface protective film (11) attached thereon is described. A groove (60) is formed in the area of the table corresponding to at least a part of the outer periphery of the wafer. Further, the table includes a holding means (33) for holding the wafer to the front surface of the table and a suction means for suction of the air in the groove. Thus, the dicing film can be positively collapsed in the groove while at the same time being restored to the original position.

Abstract: A mounting table structure arranged in a processing chamber is provided for mounting a target object to be processed on the upper surface. The mounting table structure is characterized in having a mounting table wherein a heating unit are embedded to heat the target object to perform a specified heat treatment to the target object, and a supporting column which stands on the bottom portion of the processing chamber and supports the mounting table. The mounting table structure is also characterized in that a heat-equalizing member spread in a planar direction is embedded above the heating unit in the mounting table.

Abstract: An object of an embodiment of the present invention is to provide a method with which it is possible to easily distinguish a proliferation phase of a cell cycle from a resting phase thereof in real time. The object of the embodiment of the present invention is attained by providing a method for performing phase identification of the cell cycle, the method including: visualizing one or more gene-expression products as markers whose amounts in a cell change in a cell-cycle dependent manner; and detecting the products so as to distinguish the proliferation phase of the cell cycle from the resting phase thereof.

Abstract: According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.

Abstract: A method for controlling a temperature of a mounting table includes a first and a second temperature control mode in which a first and a second coolant passageway of a coolant circulator are connected in parallel between an output port and a return port of the coolant circulator. The first temperature control mode includes: making a part of a coolant of a reference temperature flow in the first coolant passageway after raising or lowering the temperature thereof to a desired set temperature; and making a residual coolant flow in the second coolant passageway while substantially maintaining the reference temperature thereof. The second temperature control mode includes: making a part of the coolant flow in the first coolant passageway while substantially maintaining the reference temperature thereof; and making a residual coolant flow in the second coolant passageway while substantially maintaining the reference temperature thereof.

Abstract: The present invention is directed to methods for suppressing the growth of oral squamous-cell carcinoma cells. The methods include introducing at least one gene selected from miR-137 or miR-193a into oral squamous-cell carcinoma cells.

Abstract: A first circuit generates a first sequence of square wave voltages having a voltage level that changes to a positive side relative to a first reference potential, which is a potential on a negative-electrode side of a direct current power source, from a direct current voltage. A second circuit generates a second sequence of square wave voltages having a voltage level lower than the voltage level of the first sequence of square wave voltages on the positive side that changes to a negative side relative to a second reference potential. The second chopper circuit further generates a third sequence of square wave voltages having a voltage level that changes to the positive and negative side in turns in the manner of sinusoidal wave relative to the first reference potential by summing the first sequence of square wave voltages and the second sequence of square wave voltages. A third circuit outputs the third sequence of square wave voltages as a charge/discharge output.

Abstract: A workpiece transfer mechanism 76 transfers workpieces W to a workpiece boat 40 having ringlike tables 86. The transfer mechanism 76 includes a fork main body 78 being movable forward and rearward with the workpiece W placed thereon; stopper members 94 provided at the end portion of the fork main body 78; clamp means 96 provided on the proximal end side of the fork main body 78 and having a pressing portion 102 coming into contact with the circumferential edge of the workpiece W and pressing the workpiece W toward the stopper member 94 for clamping; and fork elevating means 80 for lifting and lowering the fork main body 78. When the workpieces W are transferred to a workpiece boat 40, the pressing portion 102 of the clamp means 96 is controlled so as not to be inserted into a gap between tables 86. Thus, although the pitch between the tables 86 is small, the pressing portion 102 of the clamp means 96 does not interfere with the workpiece boat 40.

Abstract: With a vehicle seat arranging structure, a second-row passenger-side seat may be placed in a rearward slide position by sliding the second-row passenger-side seat toward the rear of a vehicle by 150 millimeters so that the second-row passenger-side seat is closer to the rear of the vehicle than the second-row driver-side seat. In addition, each of the second-row driver-side seat and the second-row passenger-side seat may be placed in an obliquely-inward frontward-oriented position by swiveling each of the second-row driver-side seat and the second-row passenger-side seat from the frontward-oriented position 10 degrees inward in the vehicle-width direction. In this way, the sense of distance between the occupants seated in the second-row driver-side seat and the second-row passenger-side seat is reduced. As a result, it is possible to promote communication between these occupants (to make it easier for these occupants to communicate with each other).

Abstract: A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1.

Abstract: A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO2) is subjected a dry etching process comprising BCl3 and an additive gas including: an oxygen-containing gas, such as O2; or a nitrogen-containing gas, such as N2; or a hydrocarbon gas (CxHy), such as CH4; or a combination of two or more thereof.

Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Abstract: The present invention relates to a method for producing a recombinant hepatitis C virus-like particle comprising the steps of introducing into (i) a cell in which an RNA replicon comprising a nucleotide sequence comprising the 5? untranslated region, the nucleotide sequence coding for the NS3, NS4A, NS4B, NS5A, and NS5B proteins, and the 3? untranslated region of a genome RNA derived from a hepatitis C virus strain autonomously replicates, (ii) a vector expressing the Core, E1, E2, and p7 proteins derived from a hepatitis C virus strain that is the same as or different from that as defined in the above (i), culturing the cell, and recovering the produced virus-like particle, and a recombinant hepatitis C virus particle produced by this method.

Abstract: Provided is a test apparatus that tests a device under test, including a vector expanding section that sequentially generates a plurality of test vectors; a predicting section that calculates a predicted value for each test vector by simulating an operation of the device under test, the predicted value indicating a prescribed characteristic value of the device under test to be measured while the device under test is supplied with a test signal corresponding to the test vector; a measuring section that obtains a measured value for each test vector by measuring the prescribed characteristic value of the device under test each time the device under test is supplied with a test vector; and a judging section that judges whether the device under test is defective based on a ratio between the predicted value and the measured value corresponding to each test vector.

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

Abstract: The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.

Abstract: A treatment liquid permeation unit comprises: at least one vibration unit; and a vibration transmission unit for transmitting a vibration from the vibration unit. The vibration transmission unit is positioned between an adhesive with which a wafer is combined to a supporting plate or an adhesive adhered to a surface of the wafer and the vibration unit. A vibration from the vibration unit is transmitted via the vibration transmission unit. This promotes the treatment liquid for dissolving the adhesive to permeate the adhesive to which the treatment liquid is supplied. Therefore, the treatment liquid can more uniformly permeate the adhesive in a shorter time. This allows the treatment liquid for dissolving the adhesive to permeate the adhesive with which the wafer is combined to the supporting plate or to permeate the adhesive adhered to the surface of the wafer in a shorter time.