Abstract: A flexible printed circuit board (FPC) with an extensible element for liquid crystal display (LCD) module is provided, wherein the extensible element can extend when it is forced. It can be used for different LCD modules to achieve the purpose of simplifying manufacturing process.

Abstract: A current register unit. A first transistor of a first type, second to sixth transistors of a second type, and first and second capacitors are provided, and an image current signal is stored in the current register unit when a control signal is at a first logic level, and the image current signal is output by the current register unit when the control signal is at a second logic level. An image display device that utilizes the current register unit is also disclosed.

Abstract: A liquid crystal display panel having a display region and a non-display region is provided. The non-display region of the liquid crystal panel comprises a plurality of driver chip joining regions and a plurality of flexible printed circuit bonding regions. There are several groups of circuit lines connecting various driver chip joining regions and flexible printed circuit bonding regions. The ends of the circuit lines connected to the driver chip joining region are the input terminals. Furthermore, each group of circuit lines has a plurality of sub-lines for controlling the pixels of different colors. Among the sub-lines of neighboring circuit lines, the sub-lines at the input terminal for controlling identical color pixels are set up in pairs adjacent to each other. Hence, the resistance-capacitance loading of the liquid crystal display panel is raised and the image quality is improved without incurring greater manpower or manufacturing cost.

Abstract: An assembly structure for flat panel display includes a housing with a skid structure therein to fit the flat panel display, a connector with a male portion and a female portion mounted on the flat panel display and a system mainboard on the housing respectively.

Abstract: A structure of a thin film transistor (TFT) planar display panel is disclosed. The structure includes a light-transmissible substrate, a buffer layer formed on the light-transmissible substrate, a top-gate TFT structure formed on the buffer layer and including a channel region, and a light-shielding structure formed between a back light source and the top-gate TFT structure, and substantially aligned with the channel region for protecting the channel region from illumination of the back light source. The process for manufacturing a TFT planar display panel is also disclosed.

Abstract: A structure of an illumination apparatus is described. The structure has a light guide rod arranged at one lateral side of a light guide plate, and plural light sources located below the light guide rod. The light guide rod has at least one tilt plane formed thereon in order to guide the light emitted from the light sources to the light guide plate such that uniform planar light could be generated therefrom. A plurality of notches is formed in the tilt plane, and a plurality of depressed or protruding dispersion dots is formed on an out-going plane of the light guide rod. The structure further includes an anti-reflection layer positioned between the light guide rod and the light guide plate.

Abstract: A source follower capable of compensating the threshold voltage is provided. The source follower comprises a current source, a switching circuit, and a thin film transistor. The source follower makes the threshold voltage of the thin film transistor constant by using the current source, and makes the input voltage nearly equal to the output voltage by using the storage capacitor and the compensating capacitor. Thus, it can make the error of the output voltage fall in the error range of the gray level voltage.

Abstract: A back light module disposed under a display panel has at least a light source generator for generating light beams, a diffusing plate for scattering the light beams to the display panel, a light guide plate (LGP) for scattering the light beams to the diffusing plate, a reflecting sheet for scattering the light beams to the light guide plate. The reflecting sheet has at least an opening for dissipating heat generated by the operation of the light source generator of the back light module.

Abstract: A light module is disclosed with an LED light for a LCD panel. LGP or LGS have mixed with well-mixed fluorescent powders therein and the white light with triple wavelength is made by the light rays emitted from UV LED to excite the well-mixed fluorescent powders. The present invention reduces the production cost and increases the color performance of the LCD.

Abstract: A light module with LED light source for LCD panel. Light-receiving surfaces of LGP (light guide plate), light-receiving surfaces of LGS (light guide stick) or light-emitting surfaces of LGS are coated with the mixed fluorescent powder and the white light with triple wavelength is made by the light rays emitted from UV LED to excite the mixed fluorescent powders. It could replace the white light LED with double wavelength of Nichia to reduce the production cost and increase the color performance of LCD.

Abstract: A light module and a flat panel display including the light module. The light module includes a printed circuit board having a first surface and a second surface; a first light source disposed on the first surface of the printed circuit board; a second light source disposed on the second surface of the printed circuit board; and a light guiding plate disposed adjacent to the printed circuit board, for guiding light emitted from the first and/or the second light sources to a first surface of the light guiding plate.

Abstract: The present invention provides a method of forming a low temperature polysilicon thin film transistor (LTPS TFT). A polysilicon layer including a channel region is formed first. A first and a second plasma enhanced chemical vapor deposition processes are sequentially performed to form a composite gate insulating layer composed of a TEOS-based silicon oxide layer and a silicon nitride layer on the channel region. Finally a gate electrode and a source/drain of the low temperature polysilicon thin film transistor are formed.

Abstract: A liquid crystal display (LCD) device using the COA process. The LCD device includes a passivation layer formed on metal wires in the wire-collecting area for preventing metal wires from exposure. Or, the LCD device includes an insulation layer formed between outer leads in the outer lead bonding (OLB) area for improving insulation among the outer leads.

Abstract: The FPC that is designed to have the special shape, an elastic portion, can shorten its length by elastic force after it is turned over to the reverse side of the light source unit for achieving the purposes without wasting any space of the LCD module and incurring the inconvenience of user.

Abstract: A structure of color elements for a color filter. At least a first, second, and third color element are disposed in a delta-type arrangement. An overlapping portion is formed between two adjacent color elements to serve as a light-blocking area. At least one color element is octagonal, having four straight sides and four beveled sides.

Abstract: A partially light-penetrative and partially light-reflective liquid crystal display (LCD) structure is disclosed. The LCD structure includes a top and a bottom substrate structures respectively including half wave plates; a light-penetrative electrode layer formed on a first portion of the bottom substrate structure; a dielectric layer formed on a second portion of the bottom substrate structure; a light-reflective electrode layer formed on the dielectric layer and connected to the light-penetrative electrode layer; and a liquid crystal layer disposed between the light-reflective and light-penetrative electrode layers and the top substrate structure. The thicknesses of the liquid crystal layer above the first and the second portions of the bottom substrate structure, respectively, are selected to allow the liquid crystal layer above the first portion to be equivalent to a half wave plate, and the liquid crystal layer above the second portion to be equivalent to a quarter wave plate.

Abstract: A structure of a color filter plate for a liquid crystal display panel is described. The structure includes a body having four truncated edges and two recessed portions. The four truncated edges are non-right-angled in shape and respectively formed at four vertexes of the body. The two recessed portions are respectively formed on two opposite sides of the body. When forming a color filter layer composed of plural color filter plates in delta arrangement, the overlapping area of three adjacent color filter plates can be lowered. The light leakage problem of the liquid crystal display panel is suppressed, and the picture quality and the contrast thereof are enhanced.

Abstract: A method for manufacturing a liquid crystal display including a pixel portion having a pixel TFT as well as a drive circuit portion having a N-type TFT and a P-type TFT is disclosed.

Abstract: An improved back light module that the special design of light guide plate can prevent from the non-uniform of illumination. The module includes a light source; a reflector below the light source to reflect back the downward light rays for increasing the illumination of the back light module; and a light guide plate above said light source that a first portion of the bottom surface of said light guide plate, which is over said light source, is a plane and a second portion of the bottom/top surface of said light guide plate, which is not over said light source, has a plurality of regular bumps/recesses for focusing the light rays to increase the illumination, wherein said first portion and said second portion are arranged alternately in order.

Abstract: A process for forming a polycrystalline silicon layer includes the following steps. Firstly, at least one seed is formed on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies the seed. Then, the amorphous silicon layer is irradiated with a laser to melt the amorphous silicon layer. Afterward, the molten amorphous silicon layer is recrystallized to form a polycrystalline silicon layer.