Abstract: The purpose of the present invention is to provide a flat lighting structure for a light source of a liquid crystal display (LCD). The flat lighting structure includes a light guide plate having a side, a light guide stick having two ends and disposed by the side of the light guide plate, and a first luminary and a second luminary disposed at the two ends of the light guide stick for providing a light, wherein the light guide stick further comprises a light guide concave disposed between the first luminary and the second luminary for guiding the light toward the light guide plate.

Abstract: A process for passivating polysilicon and a process for fabricating a polysilicon thin film transistor. A polysilicon layer is formed. Next, high-pressure annealing is performed using a fluorine-containing gas, a chlorine-containing gas, an oxygen-containing gas, a nitrogen-containing gas, or mixtures thereof to passivate the polysilicon layer.

Abstract: A back light module disposed under a display panel has at least a light source generator for generating light beams, a diffusing plate for scattering the light beams to the display panel, a light guide plate for scattering the light beams to the diffusing plate, at least a light shading sheet with a plurality of light holes, and a reflecting sheet for scattering the light beams to the light guide plate.

Abstract: A method for forming a self-aligned pixel electrode of a LCD is introduced. The LCD includes a substrate having a plurality of adjacent pixel electrode regions. A joint side is positioned between each pixel electrode region and its adjacent pixel electrode regions. First, a spacer is formed on the joint sides of the pixel electrode regions, and the spacer has an undercut profile. Then, a transparent conductive layer is formed on the substrate, and the transparent conductive layer that covers the pixel electrode regions is separated from the spacer to form a self-aligned pixel electrode.

Abstract: A structure of a semiconductor device facilitating electrostatic discharge protection at least includes a source terminal, a drain terminal, and a gate terminal, wherein a portion of the source terminal and a portion of the drain terminal are overlapped above the gate terminal to increase the coupling capacitance so that the electrostatic discharge protection device can be turned on quickly. Accordingly the response of the electrostatic discharge protection device to an electrostatic discharge can be effectively promoted.

Abstract: A thin film transistor (TFT) structure includes a substrate, a polysilicon structure including a plurality of channel regions, at least one lightly doped region and at least one heavily doped source/drain region, a plurality of gate structures, and an insulating layer formed between the gate structures and the polysilicon structure. The thickness of a first portion of the insulating layer under and between the gate structures is greater than the thickness of a second portion of the insulating layer adjacent to the first portion. At least one lightly doped region is formed under the first portion of the insulating layer and at least one heavily doped source/drain region is formed under the second portion of the insulating layer via the same doping procedure.

Abstract: A low-temperature polysilicon thin film transistor having a buried LDD structure is provided. Two heavily doped regions are formed in a semiconductor layer and distributed just below a surface of the semiconductor layer. Two LDD regions are both sandwiched between the two heavily doped regions in a direction substantially parallel to the surface of semiconductor layer, and separated from the surface of the semiconductor layer by a portion of the semiconductor layer. The process for producing such a thin film transistor is also provided. A first, a second and a third doping materials are injected into a semiconductor layer in different directions to form heavily doped regions and LDD regions.

Abstract: An LED lighting module. The LED lighting module comprises a light guiding plate and an LED. The light guiding plate has a first side, a second side adjacent to the first side, a light emitting surface in the central part of the light guiding plate, a depression disposed on the first side, and a reflecting portion disposed on the second side. The LED is disposed in the depression and inclined with respect to the first side, wherein the light emitted from the LED is reflected and guided to the light emitting surface by the reflecting portion.

Abstract: A pixel testing method is provided. The pixel testing method is adapted to measure device parameters within each pixel of a display. Before plating a lighting device into each pixel, a capacitor is formed such that one end of the capacitor is connected to an open-circuit terminal of an electronic device while the other end of the capacitor is connected to an added common line (or the original scan line or data line of the display). The parameters of the electronic device connected to the lighting device are tested through a charging/discharging of the capacitor so that all the devices within a pixel can be tested before forming organic functional layer in every pixel.

Abstract: A method of fabricating a thin film transistor (TFT) with self-aligned structure. A substrate is provided, with a semiconductor layer and gate insulation layer formed in sequence thereon, followed by formation of a conductive layer on the gate insulation layer, and definition of the conductive layer to form a gate conductive layer and a dummy conductive layer. The dummy conductive layer is on both sides of the gate conductive layer and provided with a gap therebetween. A first ion implantation is performed via the gap to form a lightly doped region on the semiconductor layer thereunder, and a sacrificial layer is formed to fill the gap. The dummy conductive layer is removed. The gate conductive layer and the remaining sacrificial layer are used as a mask. Finally, a second ion implantation is performed to form a heavily doped source/drain region on the semiconductor layer.

Abstract: A light module and a flat panel display including the light module. The light module includes a light guiding plate having four sides; three light guide sticks disposed on the three sides of the light guiding plate; and two light sources, each being disposed between two adjacent light guide sticks. The light beam emitted from at least one light source can be received by the three light guide sticks and then enters the light guiding plate from the three sides of the light guiding plate. In this way, light is incident from three sides of the light guiding plate, thus enhancing uniform distribution of light.

Abstract: A driving method of an LCD panel having a driving IC and a plurality of display groups comprising a plurality of display cells and are respectively coupled to a data electrode and a gate electrode. The driving IC simultaneously drives one display cell in each display group on the same row. First, video signals are provided by the driving IC to one display cell in each display group on the same row. Here, the display cells of adjacent display groups receive opposite polarity video signals. Finally, the scan signals are provided to the gate electrodes.

Abstract: A dual-display panel module has a shared ASIC chip. A primary-display panel module provides obverse-side image display, a secondary-display panel module provides reverse-side image display, a connector electrically connects the primary-display panel and second-display panel, and a driver operatively is coupled to the primary display module and secondary display module, wherein the driver is supported in electrical connections the primary display module and the secondary display modules via the connector.

Abstract: In a process for forming a thin film transistor, a gate insulator layer is formed on a semiconductor layer. A gate structure is formed on the gate insulator layer, and source/drain structures are formed in the semiconductor layer. The source/drain structures are spaced from each other by a channel region. A first kind of doping material is injected into a first end portion of the channel region in a first direction of a first angle from a surface of the semiconductor layer to form a first LDD structure, and a second kind of doping material is injected into the first end portion of the channel region in a second direction of a second angle from the surface of the semiconductor layer to form a first halo structure in contact with the first LDD structure.

Abstract: A transflective liquid crystal display device has the consistent chromaticity in transmissive and reflective modes. An insulating layer is formed on a first substrate in the reflective region. A reflective layer is formed on the insulating layer. A color filter is formed on the first substrate and the reflective layer, wherein the color filter thickness in the reflective region is thinner than that in the transmissive region. A pixel electrode is formed on the color filter. A second substrate opposite the first substrate is provided. A common electrode is formed on an inner side of the second substrate. A liquid crystal layer is interposed between the first substrate and the second substrate.

Abstract: A thin film transistor having a single LDD structure with a halo structure is provided. The single LDD structure is disposed between source/drain structures, and having a first side adjacent to a first one of the source/drain structures and a second side spaced from a second one of the source/drain structures by essentially a semiconductor material. The halo structure is adjacent to the LDD structure partially or largely covering the LDD structure.

Abstract: A method of fabricating a thin film transistor (TFT) with self-aligned structure. A substrate is provided, with a semiconductor layer and gate insulation layer formed in sequence thereon, followed by formation of a conductive layer on the gate insulation layer, and definition of the conductive layer to form a gate conductive layer and a dummy conductive layer. The dummy conductive layer is on both sides of the gate conductive layer and provided with a gap therebetween. A first ion implantation is performed via the gap to form a lightly doped region on the semiconductor layer thereunder, and a sacrificial layer is formed to fill the gap. The dummy conductive layer is removed. The gate conductive layer and the remaining sacrificial layer are used as a mask. Finally, a second ion implantation is performed to form a heavily doped source/drain region on the semiconductor layer.

Abstract: A method of forming an encapsulation structure for an organic light-emitting device is disclosed. The method is applied to organic light-emitting devices (OLED) and performed in a single reaction chamber. The method includes steps of placing an organic light-emitting device into a plasma chamber, forming a first buffer layer on the organic light-emitting device, forming a first passivation layer on the first buffer layer, forming a second buffer layer on the first passivation layer, and forming a second passivation layer on the second buffer layer.

Abstract: A liquid crystal display device that includes a substrate, a metal layer formed over the substrate, a color filter layer formed over the metal layer, an insulating film, made of photosensitive material, formed between the metal layer and the color filter layer to physically and electrically isolate the metal layer from the color filter layer, and a pixel electrode formed over the color filter layer.

Abstract: Single cell gap transflective liquid crystal display which provides that the backlight traverses the reflective pixel portion twice and thereby follows a path similar to that of the ambient light. A slant reflector is built on the path of the back light to reflect the transmitted light to the reflective portion so that the back light and ambient light follow similar paths.