Abstract: A ceramic scintillator according to the present embodiment has a composition represented by (Lu1-xPrx) a (Al1-yGay) bO12, wherein x, y, a, and b in the composition respectively satisfy 0.005?x?0.025, 0.3?y?0.7, 2.8?a?3.1, and 4.8?b?5.2.

Abstract: A radiation shield unit, which shields against neutron rays, X-rays, and ?-rays, contains 10 vol % or more and 90 vol % or less of gadolinium.

Abstract: A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 ?m and not more than 200 ?m. The contact angle between the first jutting portion and the first sloped portion is 65° or less.

Abstract: A refrigerator is provided, including rare earth cold accumulating material particles filled in a cold accumulating vessel. The rare earth cold accumulating material particles are a rare earth oxide or a rare earth oxysulfide. The rare earth cold accumulating material particles define a sintered body. An average crystal grain size of the sintered body is 0.5 to 5 ?m, a porosity of the sintered body is 10 to 50 vol. %, and an average pore size of the sintered body is 0.3 to 3 ?m. In an arbitrary cross-section of the rare earth cold accumulating material particles, a number of pores per a unit area of 10 ?m×10 ?m is 20 to 70.

Abstract: A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (MTi/ME1) of a mass MTi of Ti to a mass ME1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (MTi/ME1) being 0.1 or less.

Abstract: A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 ?m at the bonding boundary.

Abstract: According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.

Abstract: A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ?A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ?B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |?A??B|?0.1.

Abstract: A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities: 0.8? dA/dB? 1.2; and 0.8? rA/rB? 1.2.

Abstract: A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

Abstract: A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 ?m and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.

Abstract: According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ?A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ?B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |?A??B|?0.1.

Abstract: A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.

Abstract: A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.

Abstract: A reduction in a permeability of refrigerant gas is suppressed while increasing a filling factor of regenerator material particles with respect to a stage of a cold head. A cold head includes a stage including regenerator material particle groups, and a metal mesh material partitioning the regenerator material particle groups. The metal mesh material has quadrangular mesh holes each having a length of a long side of 1/10 or more and ½ or less of each of average particle sizes of the regenerator material particle groups.

Abstract: In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 ?m×50 ?m observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

Abstract: A packaging container for transporting ceramic substrates according to the present embodiment includes a bottom portion in a rectangular shape, and four side portions connected to four edges of the bottom portion respectively. Side protrusions having a height of 2 mm or more and protruding inward are provided on at least two opposite side portions among the four side portions. The bottom portion is provided with a bottom protrusion having a height of 2 mm or more and protruding inward.

Abstract: According to an embodiment, a radiation-scintillated shield which attenuates an incident radiation, includes a shielding part containing an activator-added gadolinium compound as an aggregate. The activator uses the gadolinium compound as a base material and emits light when struck by the radiation. Consequently, it becomes possible to shield a ?-ray and a neutron with a thickness which is about the same as that of a conventional concrete shield of ?-ray shield, and to confirm leakage of radiation.