Patents Assigned to Toshiba Materials Co., Ltd.
  • Patent number: 12023513
    Abstract: A light source for myopia prevention article includes a light emitter to emit light having an emission spectrum continuing from a first wavelength of not less than 360 nm nor more than 400 nm to a second wavelength of more than 400 nm.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: July 2, 2024
    Assignees: Toshiba Materials Co., Ltd., Tsubota Laboratory, Inc.
    Inventors: Masahiko Yamakawa, Hidemasa Torii, Toshihide Kurihara, Kazuo Tsubota
  • Publication number: 20240199495
    Abstract: A ceramic ball material according to an embodiment including: a spherical portion; and a band-shaped portion formed in a band shape. When C denotes circularity of the band-shaped portion as observed from a height direction thereof, the circularity C is in a range of more than 0% and 2.5% or more.
    Type: Application
    Filed: February 27, 2024
    Publication date: June 20, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kai FUNAKI, Katsuhiko YAMADA, Shoya SANO
  • Publication number: 20240191753
    Abstract: A ceramic ball material according to an embodiment including: a spherical portion; and a band-shaped portion formed over a circumference of a surface of the spherical portion. The ceramic ball material has a ratio Rtb/Rts of 1.0 or more, where Rtb denotes a maximum cross-sectional height of a roughness profile on an outer peripheral surface of the band-shaped portion; and Rts denotes a maximum cross-sectional height of roughness on an outer peripheral surface of the spherical portion.
    Type: Application
    Filed: February 21, 2024
    Publication date: June 13, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kai FUNAKI, Hideki SATO
  • Publication number: 20240182770
    Abstract: According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 ?m×20 ?m unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 ?m×50 ?m unit area in any cross section is not less than 1 ?m and not more than 10 ?m. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 ?m×50 ?m unit area is not less than 2 and not more than 10.
    Type: Application
    Filed: January 16, 2024
    Publication date: June 6, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuyuki AOKI, Yasuhiro GOTO, Kentaro IWAI, Takayuki FUKASAWA, Yoshihito YAMAGATA
  • Publication number: 20240170177
    Abstract: According to one embodiment, a tungsten wire includes a tungsten alloy containing rhenium. According to an EBSD analysis on a unit area, crystalline orientations having an orientation difference of 15 degrees or less from <101>, which is parallel to a wire drawing direction, account for an area ratio of 70% or more and 90% or less to a measurement field on an IPF map. The unit area is a 40 ?m×40 ?m area located within a range of 100 ?m concentrically extending from a central axis in a cross-section along a wire radial direction, which is perpendicular to the wire drawing direction.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 23, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hitoshi AOYAMA, Hideaki BABA, Kenji TOMOKIYO
  • Publication number: 20240149546
    Abstract: A rubber mold according to an embodiment is for CIP processing of a green compact with a plate shape. The rubber mold includes one or more approximately columnar hole sections are provided on at least one or more bottom surfaces. Further, when a diameter of an opening of the hole section is denoted by a and a maximum depth of the hole section is denoted by b, a/b<2.0 is satisfied.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 9, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kai FUNAKI, Yoshiyuki FUKUDA, Koji HASEGAWA
  • Patent number: 11973003
    Abstract: According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.
    Type: Grant
    Filed: January 19, 2023
    Date of Patent: April 30, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takayuki Naba, Keiichi Yano, Hiromasa Kato
  • Patent number: 11957052
    Abstract: According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 ?m or more is present at any vertex of chips of the thermoelectric materials.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: April 9, 2024
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Shinichi Yamamoto, Masami Okamura, Nobuaki Nakashima, Masanori Mizobe
  • Patent number: 11948900
    Abstract: A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: April 2, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Maki Yonetsu, Seiichi Suenaga, Sachiko Fujisawa, Takayuki Naba
  • Patent number: 11942490
    Abstract: A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination ? of the substrate being set in a predetermined range, where tsub is a thickness of the substrate, tepi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination ? is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga2O3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: March 26, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kuniyuki Kakushima, Akito Sasaki, Atsuya Sasaki, Hideaki Hirabayashi
  • Publication number: 20240082909
    Abstract: A metal powder for 3D printer includes a plurality of metal particles. A particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 ?m to 200 ?m. The particle size distribution gives a difference D90?D10 of 10 ?m or more between D90 and D10, D90 denoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and D10 denoting a particle diameter in which a cumulative percentage is 10% in volume proportion.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Masanori MIZOBE, Shinichi YAMAMOTO, Tadashi INO, Tooru TANAKA, Hideshi NAKANO
  • Publication number: 20240082824
    Abstract: According to one embodiment, there is provided a multielement composite oxide powder that includes an oxide particle including a composite oxide, the composite oxide containing: constituent metal elements containing two or more hexavalent metal elements and two or more pentavalent metal elements at a content of 80 atm % or more in total; and oxygen. The oxide particle has a major axis and a minor axis intersecting the major axis, and has a polygonal tunnel structure including one or more polygonal tunnels of five or more vertices in a major axis direction along the major axis.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Applicant: TOSHIBA MATERIALS CO., LTD.
    Inventors: Daisuke FUKUSHI, Seiichi SUENAGA, Akito SASAKI, Masaki TOYOSHIMA
  • Publication number: 20240077233
    Abstract: Magnetic cold storage material particles with a low breakage rate in the case of being subjected to long-term vibration caused by operation of a refrigerator under a cryogenic temperature are provided. A cold storage device and a refrigerator, each of which includes the above-described magnetic cold storage material particles and does not degrade refrigeration performance under long-term operation, are provided. Apparatuses provided with this refrigerator, such as a superconducting magnet, are provided. Each magnetic cold storage material particle of the embodiment is composed of an intermetallic compound containing a rare earth element, and an area percentage of voids present in its cross-section is 0.0001% or more and 15% or less. Each of the cold storage device of the embodiment, the refrigerator of the embodiment, and the apparatuses provided with this refrigerator, such as a superconducting magnet, includes the magnetic cold storage material particles of the embodiment.
    Type: Application
    Filed: October 19, 2023
    Publication date: March 7, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takahiro KAWAMOTO, Daichi USUI, Ryosuke HIRAMATSU
  • Publication number: 20240079238
    Abstract: A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200° C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15° C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600° C. and not more than 950° C., and a process of cooling the stacked body from the bonding temperature to 200° C. at an average temperature lowering rate of the stacked body of not less than 15° C./min. A ceramic substrate is favorably a silicon nitride substrate.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 7, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiromasa KATO, Masanori HOSHINO, Hideaki HIRABAYASHI, Seiichi SUENAGA, Kazumitsu MORIMOTO
  • Publication number: 20240052461
    Abstract: According to one embodiment, a tungsten wire includes a tungsten alloy containing rhenium. The tungsten wire includes a protrusion peak density (Spd) of 7000 or more and 11000 or less as a surface roughness parameter.
    Type: Application
    Filed: October 24, 2023
    Publication date: February 15, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hitoshi AOYAMA, Hideaki BABA, Masanori MIZOBE, Kenji TOMOKIYO
  • Patent number: 11896966
    Abstract: In one embodiment, an antibacterial material includes at least one microparticles selected from tungsten oxide microparticles and tungsten oxide complex microparticles. The microparticles, which have undergone a test to evaluate viable cell count by inoculating in a test piece, to which the microparticles are adhered in a range of 0.02 mg/cm2 or more and 40 mg/cm2 or less, at least one bacterium selected from among Staphylococcus aureus, Escherichia coli, Klebsiella pneumoniae, Pseudomonas aeruginosa, methicillin-resistant Staphylococcus aureus, and enterohemorrhagic Escherichia coli, and storing for 24 hours, have an antibacterial activity value R of 0.1 or more expressed by the following: R=log(B1/C1) where, B1 denotes an average value (number) of viable cell count after storing an untreated test piece for 24 hours, and C1 denotes an average value (number) of viable cell count after storing the test piece on which the microparticles are coated for 24 hours.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: February 13, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kayo Nakano, Akira Sato, Yasuhiro Shirakawa, Keiichi Fuse, Shinya Kasamatsu, Akito Sasaki
  • Publication number: 20240045083
    Abstract: To provide an X-ray ceramic scintillator array as well as a radiation detector and a radiation inspection apparatus using the same, which prevents a resin used for a reflective layer of the scintillator array from being colored due to X-ray irradiation so as to realize a significant improvement against the output drop of the scintillator array. The resin used for the reflective layer of the X-ray ceramic scintillator array has a feature wherein a ratio of absorption intensity in a wavenumber range of 1490 cm?1 to 1750 cm?1 to absorption intensity in a wavenumber range of 2500 cm?1 to 2990 cm?1 has a value that falls within a specific range in an absorption spectrum based on Fourier transform infrared spectrometry (FT-IR).
    Type: Application
    Filed: September 6, 2023
    Publication date: February 8, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiroyasu KONDO, Makoto HAYASHI, Kazumitsu MORIMOTO
  • Patent number: 11884882
    Abstract: According to one embodiment, provided is an electrochromic device including an electrochromic layer, which contains a tungsten oxide material. The tungsten oxide material includes potassium-containing tungsten oxide particles having an average particle size of 100 nm or less. The potassium-containing tungsten oxide particles contain potassium within a range of 1 mol % to 50 mol %, and include a central section and a peripheral section adjacent to the central section. A periodicity of a crystal varies between the central section and the peripheral section.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: January 30, 2024
    Assignees: Toshiba Materials Co., Ltd., Hayashi Telempu Corporation
    Inventors: Daisuke Fukushi, Shuichi Saito, Michiaki Fukui
  • Publication number: 20240025811
    Abstract: A silicon nitride sintered body having improved wear resistance and a wear-resistant member using the silicon nitride sintered body are provided. A silicon nitride sintered body according to an embodiment includes silicon nitride crystal grains and a grain boundary phase. An average value of solid solution oxygen amounts of the silicon nitride crystal grains in a 20 ?m×20 ?m region at any cross section is not less than 0.2 wt %. In a 50 ?m×50 ?m region at any cross section, an average value of major diameters of the silicon nitride crystal grains is not less than 0.1 ?m and not more than 10 ?m, and an average value of aspect ratios of the silicon nitride crystal grains is not less than 1.5 and not more than 10.
    Type: Application
    Filed: September 5, 2023
    Publication date: January 25, 2024
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuyuki AOKI, Takayuki FUKASAWA, Naoto HOUTSUKI, Yoshihito YAMAGATA, Kentaro IWAI
  • Patent number: 11873553
    Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: January 16, 2024
    Assignees: SHIBAURA INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Atsushi Yumoto, Tomohiro Sugano, Takashi Hino, Tetsuo Inoue, Shuichi Saito