Abstract: According to one embodiment, there is provided a multielement composite oxide powder that includes an oxide particle including a composite oxide, the composite oxide containing: constituent metal elements containing two or more hexavalent metal elements and two or more pentavalent metal elements at a content of 80 atm % or more in total; and oxygen. The oxide particle has a major axis and a minor axis intersecting the major axis, and has a polygonal tunnel structure including one or more polygonal tunnels of five or more vertices in a major axis direction along the major axis.

Abstract: According to one embodiment, a tungsten wire includes a tungsten alloy containing rhenium. The tungsten wire includes a protrusion peak density (Spd) of 7000 or more and 11000 or less as a surface roughness parameter.

Abstract: In one embodiment, an antibacterial material includes at least one microparticles selected from tungsten oxide microparticles and tungsten oxide complex microparticles. The microparticles, which have undergone a test to evaluate viable cell count by inoculating in a test piece, to which the microparticles are adhered in a range of 0.02 mg/cm2 or more and 40 mg/cm2 or less, at least one bacterium selected from among Staphylococcus aureus, Escherichia coli, Klebsiella pneumoniae, Pseudomonas aeruginosa, methicillin-resistant Staphylococcus aureus, and enterohemorrhagic Escherichia coli, and storing for 24 hours, have an antibacterial activity value R of 0.1 or more expressed by the following: R=log(B1/C1) where, B1 denotes an average value (number) of viable cell count after storing an untreated test piece for 24 hours, and C1 denotes an average value (number) of viable cell count after storing the test piece on which the microparticles are coated for 24 hours.

Abstract: To provide an X-ray ceramic scintillator array as well as a radiation detector and a radiation inspection apparatus using the same, which prevents a resin used for a reflective layer of the scintillator array from being colored due to X-ray irradiation so as to realize a significant improvement against the output drop of the scintillator array. The resin used for the reflective layer of the X-ray ceramic scintillator array has a feature wherein a ratio of absorption intensity in a wavenumber range of 1490 cm?1 to 1750 cm?1 to absorption intensity in a wavenumber range of 2500 cm?1 to 2990 cm?1 has a value that falls within a specific range in an absorption spectrum based on Fourier transform infrared spectrometry (FT-IR).

Abstract: According to one embodiment, provided is an electrochromic device including an electrochromic layer, which contains a tungsten oxide material. The tungsten oxide material includes potassium-containing tungsten oxide particles having an average particle size of 100 nm or less. The potassium-containing tungsten oxide particles contain potassium within a range of 1 mol % to 50 mol %, and include a central section and a peripheral section adjacent to the central section. A periodicity of a crystal varies between the central section and the peripheral section.

Abstract: A silicon nitride sintered body having improved wear resistance and a wear-resistant member using the silicon nitride sintered body are provided. A silicon nitride sintered body according to an embodiment includes silicon nitride crystal grains and a grain boundary phase. An average value of solid solution oxygen amounts of the silicon nitride crystal grains in a 20 ?m×20 ?m region at any cross section is not less than 0.2 wt %. In a 50 ?m×50 ?m region at any cross section, an average value of major diameters of the silicon nitride crystal grains is not less than 0.1 ?m and not more than 10 ?m, and an average value of aspect ratios of the silicon nitride crystal grains is not less than 1.5 and not more than 10.

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.

Abstract: A method may produce a two-stage heat regenerating cryogenic refrigerator including a vacuum vessel, first and second cylinder disposed in the vessel, the second cylinder coaxially connected to the first cylinder, and first and second regenerator respectively disposed in the first and second cylinder. The method may include: accommodating a first heat regenerating material (HRM) in the first regenerator; and filling a plurality of HRM particles in the second regenerator. The HRM particles may be a second HRM, each of the HRM particles including an oxide or oxysulfide heat regenerating substance having a maximum value of specific heat at a temperature of ?20 K of 0.3+ J/cm3·K and Ca, Mn, Mg, Be, Sr, Al, Fe, Cu, Ni, and/or Co. Each of the HRM particles may include a first and second region, the second region being closer to an HRM particle outer edge than the first region.

Abstract: A method may produce a heat regenerating material particle, including: preparing a slurry by adding a powder of the heat regenerating substance to an alginic acid aqueous solution and mixing the powder of the heat regenerating substance and the aqueous alginic acid solution; and forming a particle by gelling the slurry by dropping the slurry into a gelling solution. The gelling solution may include a metal element including calcium (Ca), manganese (Mn), magnesium (Mg) beryllium (Be), strontium (Sr), aluminum (Al), iron (Fe), copper (Cu), nickel (Ni), and cobalt (Co). The forming may involve controlling the gelation time so that a concentration of the metal element in a first region of the particle becomes lower than a concentration of the metal element in a second region. The second region may be closer to an outer edge of the particle compared to the first region.

Abstract: The rhenium tungsten wire rod according to an embodiment is a wire rod made of a tungsten alloy containing rhenium, wherein a rhenium content is less than 30 wt % in any measurement area of a wire rod body where a unit area is 1 ?m in diameter.

Abstract: According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. In a case where Raman spectroscopy of a 20 ?m×20 ?m region at any cross section of the silicon nitride sintered body is performed, seven or more peaks are detected within a range of not less than 400 cm?1 and not more than 1200 cm?1, and the most intense peak of the seven or more peaks is not in a range of not less than 515 cm?1 and not more than 525 cm?1. Favorably, at least three of the seven or more peaks exist within a range of not less than 530 cm?1 and not more than 830 cm?1. It is favorable for at least one of the seven or more peaks to be within a range of not less than 440 cm?1 and not more than 460 cm?1.

Abstract: According to the embodiment, in a method for manufacturing a ceramic circuit board in which a copper plate is bonded to at least one surface of a ceramic substrate via a brazing material layer, the brazing material layer does not include Ag, but includes Cu, Ti, and one or two of Sn or In, and a ceramic circuit board is prepared in which a portion of the brazing material layer is exposed between the patterned configuration of the copper plate. The method includes a chemical polishing process of chemically polishing the portion of the brazing material layer, and a brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant that includes one or two selected from hydrogen peroxide and ammonium peroxodisulfate and has a pH of not more than 6.

Abstract: According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 ?m×20 ?m region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cm?1 to 810 cm?1 and 1340 cm?1 to 1370 cm?1, and four to six peaks are detected in ranges of 170 cm?1 to 190 cm?1, 607 cm?1 to 627 cm?1, 720 cm?1 to 740 cm?1, and 924 cm?1 to 944 cm?1.

Abstract: A ceramic circuit board includes a ceramic substrate and a metal plate bonded together via a bonding layer, wherein when the ceramic circuit board is observed through a cross-section defined by a thickness direction and lateral direction of the ceramic circuit board: a side surface of the metal plate has an inclined shape; and the bonding layer has a bonding-layer protruding portion which protrudes by 20 ?m or more and 150 ?m or less from an edge where the bonding layer is in contact with the side surface of the metal plate. The shape and Vickers hardness of the side surface of the metal plate are controlled. The ceramic substrate is preferably a silicon nitride substrate.

Abstract: A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 ?m or more and 40 ?m or less, and the second reflective layer having a film configured to reflect light.

Abstract: A tungsten wire according to an embodiment is a tungsten wire made of a W alloy containing rhenium, and includes a mixture on at least a part of a surface thereof, the mixture contains W, C, and O as constituent elements, and taking a radial cross-sectional thickness of the mixture as A mm and a diameter of the tungsten wire as B mm, an average value of a ratio A/B of A to B is 0.3% to 0.8%.

Abstract: A friction stir welding tool member according to the present embodiment has a shoulder portion and a probe portion concentrically projecting from an upper surface of the shoulder portion. The shoulder portion includes a curved surface processed portion that is curved to have a curved shape on an outer peripheral edge of the shoulder portion. A space occupancy occupied by the two-dimensional space in which neither the shoulder portion nor the probe portion exists is in a range of 30% to 70%, the space occupancy being determined based on a projection drawing of a side surface region surrounded from a tip of the probe portion to the curved surface processed portion of the shoulder portion.

Abstract: According to one embodiment, provided is a tungsten oxide powder including primary particles having an average particle size of 100 nm or less. Each of the primary particles include a crystal phase and an amorphous phase coexisting in each primary particle.

Abstract: According to an embodiment, a ceramic copper circuit board in which the reliability of bonding with a bonding layer is improved is provided, and an insulating circuit board includes an insulating substrate and a conductor part bonded to at least one surface of the insulating substrate. In XPS analysis of a nitrogen amount at the conductor part surface, an average value of the nitrogen amount at any three locations is within a range of not less than 0 at % and not more than 50 at %. In XPS analysis of the oxygen amount at the conductor part surface, the average value of the three locations is favorably within the range of not less than 3 at % and not more than 30 at %. The ratio of the nitrogen amount to the oxygen amount is favorably not less than 0 and not more than 5.