Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.

Abstract: A flow path member may include silicon nitride ceramics. The flow path member may have an inlet port, an outlet port, and a flow path connected to the inlet port and the outlet port inside the flow path member. A plurality of needle-shaped crystals may be arranged on a surface of the flow path where the needle-shaped crystals intersect each other.

Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.

Abstract: A light emitting device includes: a first white light source which includes N pieces of first white light emitting diodes and emits a first white light; and a second white light source which includes M pieces of second white light emitting diodes and a first resistance element electrically connected in series to the second white light emitting diodes and having a first resistance value, is electrically connected in parallel to the first white light source, and emits a second white light, the light emitting device emitting a mixed white light of the first white light and the second white light. The drive voltage of the first white light source is higher than a drive voltage of the second white light source, and a color temperature of the mixed white light is higher as a total luminous flux of the mixed white light is higher.

Abstract: A light emitting device includes: a first white light source which includes N pieces of first white light emitting diodes and emits a first white light; and a second white light source which includes M pieces of second white light emitting diodes and a first resistance element electrically connected in series to the second white light emitting diodes and having a first resistance value, is electrically connected in parallel to the first white light source, and emits a second white light, the light emitting device emitting a mixed white light of the first white light and the second white light. The drive voltage of the first white light source is higher than a drive voltage of the second white light source, and a color temperature of the mixed white light is higher as a total luminous flux of the mixed white light is higher.

Abstract: The friction stir welding tool member according to the present invention is made of a ceramic member in which a shoulder portion and a probe portion are integrally formed, wherein a root portion of the probe portion and an end portion of the shoulder portion have a curved surface shape; and the friction stir welding tool member has a ratio (R1/D) of 0.02 or more and 0.20 or less when a curvature radius of the end portion of the shoulder portion is defined as R1 (mm) and an outer diameter of the shoulder portion is defined as D (mm). In addition, the ceramic member is preferably made of a silicon nitride sintered body having a Vickers hardness of 1400 HV1 or more. According to the above-described configuration, a friction stir welding tool member having excellent durability can be provided.

Abstract: The friction stir welding tool member according to the present invention is made of a silicon nitride sintered body, wherein the silicon nitride sintered body contains 15% by mass or less of additive components except silicon nitride in such a manner that the additive components include at least one element selected from lanthanoid elements and at least one element selected from Mg, Ti, Hf, and Mo. In addition, it is preferable that the additive components further include at least one element selected from Al, Si, and C. According to the above-described configuration, a friction stir welding tool member having an excellent durability can be provided.

Abstract: The present invention provides an electrode material comprising at least one of metal compound powder and carbon powder, the powder having an average particle size of 50 ?m or less and an activation energy E? of 0.05 eV or less. Further, the powder preferably has hopping conduction characteristics at room temperature of 25° C. Furthermore, the powder preferably has an amount of oxygen defects of 1×1018 cm?3 or more. Still further, the powder preferably has a carrier density of 1×1018 cm?3 or more. Due to above structure, there can be provided an electrode material having a high storage capacity and a high charge/discharge efficiency.

Abstract: A ceramic scintillator array of an embodiment includes: a plurality of scintillator segments each composed of a sintered compact of a rare earth oxysulfide phosphor; a first reflective layer interposed between the scintillator segments adjacent to each other; and a second reflective layer arranged on a side of surfaces, on which an X-ray is incident, of the plurality of scintillator segments. A difference in dimension between an end portion of a surface of the second reflective layer and a most convex portion of the surface of the second reflective layer is 30 ?m or less.

Abstract: According to one embodiment, a lighting device includes a hollow globe having an opening at an end thereof, a light source housed in the globe and including at least an LED, a pillar portion housed in the globe and supporting the light source, a cap connector directly connected to the pillar portion, or indirectly connected to the pillar portion via another member, and a cap attached to the cap connector and electrically connected to the light source. A thermally conductive layer is provided between the inner surface of the globe and the lateral surface of the pillar portion.

Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

Abstract: The present invention provides a ceramic circuit board comprising: a ceramic substrate; and at least one of a recess and a through-hole formed in the ceramic substrate, wherein a conductive portion filled with a conductor is provided in the recess or the through-hole, the surface roughness Ra is 1.0 ?m or less, and the maximum height Rz is 100 ?m or less. It is preferable that the maximum height Rz is 10 ?m or less. Further, it is preferable that the surface roughness Ra is 0.5 ?m or less. According to the above-described configuration, it is possible to provide a ceramic circuit board having an excellent positionability of the conductive portion for mounting a semiconductor element.

Abstract: According to one embodiment, there is provided a white light source system. P(?), B(?) and V(?) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm: ? 380 780 ? P ? ( ? ) ? V ? ( ? ) ? d ? ? ? = ? 380 780 ? B ? ( ? ) ? V ? ( ? ) ? d ? ? ? ( 1 ) P ? ( ? ) / B ? ( ? ) ? 1.8 . ( 2 ) where P(?) is a light emission spectrum of white light, B(?) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(?) is a spectrum of a spectral luminous efficiency.

Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 ?m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

Abstract: A neutron grid, comprises: a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions. A thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10?6/° C. or less, or Young's modulus of the spacer is 100 GPa or more.

Abstract: A magnetic sheet 1 of an embodiment includes a stack of a plurality of magnetic thin strips and resin film parts. The stack includes from 5 to 25 pieces of the magnetic thin strips. The magnetic thin strips are provided with cutout portions each having a width of 1 mm or less (including 0 (zero)). A ratio (B/A) of a total length B of the cutout portions provided to the magnetic thin strip to a total outer peripheral length A of an outer peripheral area of the magnetic thin strip arranged on one of the resin film parts is in a range of from 2 to 25.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.