Abstract: According to the embodiment, in an insulating circuit board in which a conductor part is bonded to at least one surface of an insulating substrate, in XPS analysis of the carbon amount at the surface of the conductor part, the average value of the carbon amounts at any three locations is within the range of not less than 0 at % and not more than 70 at %. In XPS analysis of the oxygen amount of the conductor part surface, it is favorable for the average value of any three locations to be within the range of not less than 3 at % and not more than 50 at %.

Abstract: A ceramic scribe substrate according to the present embodiment includes a continuous groove having multiple grooves connected to each other formed by fiber laser irradiation on a surface portion of a scribe line shaping a ceramic substrate. The continuous groove has a depth of more than 50 ?m within a range of 0.15 times or more and 0.55 times or less a thickness of the ceramic substrate.

Abstract: A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.

Abstract: A two-stage heat regenerating cryogenic refrigerator may include: a vacuum vessel; a first and second cylinder in the vessel; the second cylinder coaxially connected to the first cylinder; a 1st regenerator in the first cylinder and accommodating heat regenerating material (HRM) 1; and a second regenerator in the 2nd cylinder accommodating HRM 2, HRM 2 including HRM particles, each HRM particle including a metal element and a heat regenerating substance including an oxide or oxysulfide and having a maximum specific heat at ?20 K of ?0.3 J/cm3·K; each HRM particle including a 1st and 2nd region, the 2nd region being closer to each HRM particle's outer edge than the 1st, and the 2nd region having a higher metal element concentration than the 1st, the 1st and 2nd region containing the heat regenerating substance.

Abstract: A cold storage material of an embodiment includes a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and a first group element of 0.001 atom % or more and 10 atom % or less, in which a maximum value of volume specific heat in a temperature range of 2 K or more and 10 K or less is 0.5 J/(cm3·K) or more.

Abstract: According to one embodiment, provided is a tungsten oxide powder slurry in which a tungsten oxide powder and an aqueous solvent are mixed. D50 is 20 nm to 10000 nm and D90 is 100000 nm or less in a particle size cumulative graph of the tungsten oxide powder in the slurry. According to X-ray diffraction, a half-value width of a most intense peak detected at 29°±1° is 2° or less.

Abstract: A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 ?m or more and 40 ?m or less, and the second reflective layer having a film configured to reflect light.

Abstract: A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ?A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ?B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |?A??B|?0.1.

Abstract: A cold storage material particle of an embodiment includes at least one first element selected from the group consisting of a rare earth element, silver (Ag), and copper (Cu) and a second element that is different from the first element and forms a multivalent metal ion in an aqueous solution, in which an atomic concentration of the second element is 0.001 atomic % or more and 60 atomic % or less, and a maximum value of volume specific heat at a temperature of 20K or less is 0.3 J/cm3·K or more.

Abstract: A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.

Abstract: A rare earth regenerator material particle and a regenerator material particle group having a high long-term reliability, and a superconducting magnet, an examination apparatus, a cryopump and the like using the same are provided. A rare earth regenerator material particle contains a rare earth element as a constituent component, and in the particle, a peak indicating a carbon component is detected in a surface region by an X-ray photoelectron spectroscopy analysis.

Abstract: A ceramic scintillator according to the present embodiment has a composition represented by (Lu1-xPrx) a (Al1-yGay) bO12, wherein x, y, a, and b in the composition respectively satisfy 0.005?x?0.025, 0.3?y?0.7, 2.8?a?3.1, and 4.8?b?5.2.

Abstract: According to the embodiment, a bonded body includes a ceramic substrate, a copper plate. A bonding layer is located on at least one surface of the ceramic substrate. The bonding layer bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer including titanium nitride or titanium oxide as a major component, and a plurality of first alloys positioned between the Ti reaction layer and the copper plate. Each of the plurality of first alloys includes at least one selected from a Cu—Sn alloy and a Cu—In alloy. The first alloys have mutually-different Sn concentrations or In concentrations. According to the embodiment, a warp amount can be reduced. A heating rate and a cooling rate in the bonding process can be increased. According to the embodiment, a silicon nitride substrate is favorable for the ceramic substrate.

Abstract: A radiation shield unit, which shields against neutron rays, X-rays, and ?-rays, contains 10 vol % or more and 90 vol % or less of gadolinium.

Abstract: A refrigerator is provided, including rare earth cold accumulating material particles filled in a cold accumulating vessel. The rare earth cold accumulating material particles are a rare earth oxide or a rare earth oxysulfide. The rare earth cold accumulating material particles define a sintered body. An average crystal grain size of the sintered body is 0.5 to 5 ?m, a porosity of the sintered body is 10 to 50 vol. %, and an average pore size of the sintered body is 0.3 to 3 ?m. In an arbitrary cross-section of the rare earth cold accumulating material particles, a number of pores per a unit area of 10 ?m×10 ?m is 20 to 70.

Abstract: A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 ?m and not more than 200 ?m. The contact angle between the first jutting portion and the first sloped portion is 65° or less.

Abstract: A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 ?m at the bonding boundary.

Abstract: A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (MTi/ME1) of a mass MTi of Ti to a mass ME1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (MTi/ME1) being 0.1 or less.

Abstract: According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.

Abstract: A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ?A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ?B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |?A??B|?0.1.