Patents Assigned to Toshiba Materials Co., Ltd.
  • RARE EARTH COLD ACCUMULATING MATERIAL PARTICLES, AND REFRIGERATOR, SUPERCONDUCTING MAGNET, INSPECTION DEVICE AND CRYOPUMP USING SAME
    Publication number: 20210284548
    Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 ?m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 16, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuhiko YAMADA, Keiichi FUSE
  • Sliding Member, And Bearing, Motor, And Drive Device Using The Same
    Publication number: 20210261467
    Abstract: The sliding member according to the embodiment includes a silicon nitride sintered body that includes silicon nitride crystal grains and a grain boundary phase, in which a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 ?m×50 ?m observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 10%. The percentage is more preferably not less than 0% and not more than 3%.
    Type: Application
    Filed: April 21, 2021
    Publication date: August 26, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kai FUNAKI, Katsuyuki AOKI, Haruhiko YAMAGUTI, Minoru TAKAO, Yutaka ABE
  • Friction stir welding tool member made of silicon nitride sintered body, and friction stir welding apparatus using the same
    Patent number: 11097374
    Abstract: The friction stir welding tool member according to the present invention is made of a silicon nitride sintered body, wherein the silicon nitride sintered body contains 15% by mass or less of additive components except silicon nitride in such a manner that the additive components include at least one element selected from lanthanoid elements and at least one element selected from Mg, Ti, Hf, and Mo. In addition, it is preferable that the additive components further include at least one element selected from Al, Si, and C. According to the above-described configuration, a friction stir welding tool member having an excellent durability can be provided.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: August 24, 2021
    Assignees: OSAKA UNIVERSITY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hidetoshi Fujii, Yoshiaki Morisada, Kai Funaki, Isao Ikeda, Yutaka Abe, Masahiro Kato
  • White light source system
    Patent number: 11094679
    Abstract: According to one embodiment, there is provided a white light source system. P(?), B(?) and V(?) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm: ?380780P(?)V(?)d?=?380780B(?)V(?)d???(1) where P(?) is a light emission spectrum of white light, B(?) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(?) is a spectrum of a spectral luminous efficiency.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: August 17, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Masahiko Yamakawa, Noriaki Yagi, Kumpei Kobayashi
  • RARE EARTH REGENERATOR MATERIAL PARTICLE, RARE EARTH REGENERATOR MATERIAL PARTICLE GROUP, AND COLD HEAD, SUPERCONDUCTING MAGNET, EXAMINATION APPARATUS, AND CRYOPUMP USING THE SAME
    Publication number: 20210246351
    Abstract: A rare earth regenerator material particle and a regenerator material particle group having a high long-term reliability, and a superconducting magnet, an examination apparatus, a cryopump and the like using the same are provided. A rare earth regenerator material particle contains a rare earth element as a constituent component, and in the particle, a peak indicating a carbon component is detected in a surface region by an X-ray photoelectron spectroscopy analysis.
    Type: Application
    Filed: April 26, 2021
    Publication date: August 12, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuhiko YAMADA, Keiichi FUSE
  • Europium-activated alkaline-earth chloroapatite phosphor and light-emitting device thereof
    Patent number: 11084979
    Abstract: A phosphor according to an embodiment is a europium-activated alkaline-earth chloroapatite phosphor having a composition expressed by a composition formula: (M1-xEux)5(PO4)3Cl, where M is an alkaline-earth element containing at least Sr and Ba, x is an atomic ratio satisfying 0.04?x?0.2. In the phosphor of this embodiment, absorptance of light at a wavelength of 400 nm is 90% or more, and absorptance of light at a wavelength of 650 nm is 2% or less.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: August 10, 2021
    Assignee: Toshiba Materials Co., Ltd.
    Inventors: Naotoshi Matsuda, Tatsunori Itoga, Masahiko Yamakawa, Hirofumi Takemura, Yasuhiro Shirakawa
  • WHITE LIGHT SOURCE SYSTEM
    Publication number: 20210242182
    Abstract: According to one embodiment, there is provided a white light source system. P(?), B(?) and V(?) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm: ? 380 780 ? P ? ( ? ) ? V ? ( ? ) ? d ? ? ? = ? 380 780 ? B ? ( ? ) ? V ? ( ? ) ? d ? ? ? ( 1 ) where P(?) is a light emission spectrum of white light, B(?) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(?) is a spectrum of a spectral luminous efficiency.
    Type: Application
    Filed: April 19, 2021
    Publication date: August 5, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Masahiko YAMAKAWA, Noriaki YAGI, Kumpei KOBAYASHI
  • LIGHT SOURCE FOR MYOPIA PREVENTION ARTICLE AND METHOD OF USING LIGHT SOURCE FOR MYOPIA PREVENTION ARTICLE
    Publication number: 20210228901
    Abstract: A light source for myopia prevention article includes a light emitter to emit light having an emission spectrum continuing from a first wavelength of not less than 360 nm nor more than 400 nm to a second wavelength of more than 400 nm.
    Type: Application
    Filed: April 16, 2021
    Publication date: July 29, 2021
    Applicants: TOSHIBA MATERIALS CO., LTD., TSUBOTA LABORATORY, INC.
    Inventors: Masahiko YAMAKAWA, Hidemasa TORII, Toshihide KURIHARA, Kazuo TSUBOTA
  • FRICTION STIR WELDING TOOL MEMBER, AND FRICTION STIR WELDING METHOD USING THE SAME
    Publication number: 20210229210
    Abstract: A friction stir welding tool member according to the present embodiment has a shoulder portion and a probe portion concentrically projecting from an upper surface of the shoulder portion. The shoulder portion includes a curved surface processed portion that is curved to have a curved shape on an outer peripheral edge of the shoulder portion. A space occupancy occupied by the two-dimensional space in which neither the shoulder portion nor the probe portion exists is in a range of 30% to 70%, the space occupancy being determined based on a projection drawing of a side surface region surrounded from a tip of the probe portion to the curved surface processed portion of the shoulder portion.
    Type: Application
    Filed: April 14, 2021
    Publication date: July 29, 2021
    Applicants: OSAKA UNIVERSITY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hidetoshi Fujll, Yoshiaki Morisada, Kai Funakl, Masahiro Kato, Takayuki Fukasawa, Yutaka Abe
  • Rare earth cold accumulating material particles, and refrigerator, superconducting magnet, inspection device and cryopump using same
    Patent number: 11059725
    Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: July 13, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Katsuhiko Yamada, Keiichi Fuse
  • FLUORESCENT SCREEN, X-RAY DETECTOR, AND X-RAY INSPECTION APPARATUS
    Publication number: 20210190975
    Abstract: A fluorescent screen is configured to convert an X-ray into visible light to one embodiment. The screen includes a gadolinium oxysulfide phosphor activated with praseodymium and cerium. The phosphor contains praseodymium having a concentration of 0.01 mass % or more and 0.3 mass % or less and cerium having a concentration of 5 ppm or more and 30 ppm or less. An average particle diameter of the phosphor is 10 ?m or more and 20 ?m or less. A weight per unit area of the phosphor is 270 mg/cm2 or more and 380 mg/cm2 or less.
    Type: Application
    Filed: March 17, 2020
    Publication date: June 24, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Eiji OYAIZU, Makoto HAYASHI
  • PHOTON COUNTING RADIATION DETECTOR AND RADIOGRAPHIC INSPECTION DEVICE USING THE SAME
    Publication number: 20210175268
    Abstract: A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination ? of the substrate being set in a predetermined range, where tsub is a thickness of the substrate, tepi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination ? is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga2O3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.
    Type: Application
    Filed: February 18, 2021
    Publication date: June 10, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kuniyuki KAKUSHIMA, Akito SASAKI, Atsuya SASAKI, Hideaki HIRABAYASHI
  • Rare earth regenerator material particle, rare earth regenerator material particle group, and cold head, superconducting magnet, examination apparatus, and cryopump using the same
    Patent number: 11015101
    Abstract: A rare earth regenerator material particle and a regenerator material particle group having a high long-term reliability, and a superconducting magnet, an examination apparatus, a cryopump and the like using the same are provided. A rare earth regenerator material particle contains a rare earth element as a constituent component, and in the particle, a peak indicating a carbon component is detected in a surface region by an X-ray photoelectron spectroscopy analysis.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: May 25, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuhiko Yamada, Keiichi Fuse
  • WHITE LIGHT SOURCE INCLUDING LED AND PHOSPHORS
    Publication number: 20210151638
    Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.
    Type: Application
    Filed: January 29, 2021
    Publication date: May 20, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Tatsunori ITOGA, Ryoji TSUDA, Naotoshi MATSUDA, Yoshitaka FUNAYAMA
  • Light source for myopia prevention article and method of using light source for myopia prevention article
    Patent number: 11007375
    Abstract: A light source for myopia prevention article includes a light emitter to emit light having an emission spectrum continuing from a first wavelength of not less than 360 nm nor more than 400 nm to a second wavelength of more than 400 nm.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: May 18, 2021
    Assignees: Toshiba Materials Co., Ltd., Tsubota Laboratory, Inc.
    Inventors: Masahiko Yamakawa, Hidemasa Torii, Toshihide Kurihara, Kazuo Tsubota
  • Ceramic copper circuit board and semiconductor device based on the same
    Patent number: 11013112
    Abstract: According to one embodiment, a ceramic copper circuit board a ceramic substrate, a copper circuit board provided at one surface of the ceramic substrate. A ratio of a thickness of the copper circuit board to a thickness of the ceramic substrate is 1.25 or more. A number of grain boundaries is not less than 5 and not more than 250 along every 10-mm straight line drawn in a front surface of the copper circuit board.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: May 18, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiromasa Kato, Takashi Sano
  • Phosphor and method of manufacturing same, and LED lamp
    Patent number: 11005010
    Abstract: A phosphor has a composition represented by Chemical formula 1: 1.5Y2O3·2.5aAl2O3:Ce where a is a number satisfying 1.02<a<1.1.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: May 11, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Yoshitaka Funayama, Yumi Kanno, Hirofumi Takemura, Tsutomu Ishii, Yasuhiro Shirakawa
  • Silicon Nitride Substrate And Silicon Nitride Circuit Board
    Publication number: 20210130241
    Abstract: In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 ?m×50 ?m observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
    Type: Application
    Filed: December 11, 2020
    Publication date: May 6, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuyuki AOKI, Takayuki FUKASAWA, Jun MOMMA, Kentaro IWAI
  • Tungsten alloy part, and discharge lamp, transmitting tube, and magnetron using the same
    Patent number: 10998157
    Abstract: It is an object to provide a tungsten alloy exhibiting characteristics equal to or higher in characteristics than those of a thorium-containing tungsten alloy, without using thorium which is a radioactive material, and a discharge lamp, a transmitting tube, and a magnetron using the tungsten alloy. According to the present invention, a tungsten alloy includes 0.1 to 5 wt % of Zr in terms of ZrC.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: May 4, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Shinichi Yamamoto, Kayo Nakano, Hiromichi Horie
  • Silicon Nitride Sintered Body, Silicon Nitride Substrate, And Silicon Nitride Circuit Board
    Publication number: 20210122680
    Abstract: In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.
    Type: Application
    Filed: December 10, 2020
    Publication date: April 29, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuyuki AOKI, Kentaro IWAI, Takayuki FUKASAWA, Jun MOMMA, Takashi SANO