Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.

Abstract: A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on one substrate and a second thicker layer of silicon dioxide is formed on the other substrate. A layer of rare earth is deposited, generally by evaporation, on the thicker layer of silicon dioxide. The rare earth layer is placed on the thin silicon dioxide layer and the structure is bonded by annealing to form a layer of rare earth silicon dioxide. A portion of the one substrate is removed to form a thin crystalline active layer on preferably the rare earth silicon dioxide layer, but potentially on the thicker silicon dioxide layer.

Abstract: Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.

Abstract: Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure.