Abstract: In an integrated circuit in which the capacitances of a pair of capacitors are arranged to be in a ratio k by choosing the areas of corresponding plates of the two capacitors to be in this ratio, and the plates are shaped so that the total lengths of their boundaries are also in this ratio so as to reduce the sensitivity of k to manufacturing tolerances, this sensitivity is further reduced by arranging that the ratios between the numbers of 90.degree. corners exhibited by the respective plates, and the numbers of 270.degree. corners exhibited by the respective plates, are each also substantially equal to k. To make this possible an aperture is arranged to be present in each plate.

Abstract: A semiconductor device includes a thyristor (4,5,8,9) in which connection is made to the cathode region (9) of the thyristor by means of an MOS structure. The MOS structure is provided by a fifth region (11) forming a pn junction with the cathode region (9), a sixth region (13) in contact with the cathode electrode (C) and forming a pn junction (14) with the fifth region (11), and an insulated gate (15) overlying a conduction channel area (110) of the fifth region (11) for defining a gateable conductive path for charge carriers into the cathode region (9) to initiate thyristor action. The conductive path is thus controlled by the voltage applied to the insulated gate (15), enabling the flow of charge carriers to the cathode region (9) to be stemmed by application of an appropriate gate voltage oxide. The fifth region (11) is electrically connected to provide a path for extraction of charge carriers during turn-off of the thyristor, thereby improving the controllable current capability of the thyristor.

Abstract: In an x-ray examination apparatus comprisinga frame (2) to which are connected an x-ray source (3) for emission of an x-ray beam and an x-ray detector (5) that is placed opposite the x-ray source, andfilter means (31) that are placed between the x-ray source (3) and the x-ray detector (5) the filter means (31) comprising an x-ray absorbing filter body (33) and drive means for positioning the filter body in the x-ray beam, the drive means comprise two disk-shaped holding members between which the filter body is placed. The filter body is in a pivot-point pivotably fixed to one holding member and is provided with a pawl that engages a curved radial groove in the second holding member. By joint rotation of the holding members the filter body is translated in the x-ray beam whereas by rotation of one of the holding members only, the curved radial groove causes the filter body to rotate in the x-ray beam.

Abstract: An integrated circuit includes a lateral transistor which has emitter regions (7) and collector regions (8) of a first conductivity type laterally spaced apart and included in a region (4, 5) of a second conductivity type opposed to the first. The lateral space (4) of the region (4, 5) of the second type situated between the emitter (7) and collector (8) regions forms the base of the transistor, with the emitter region (7) having a depth and a doping level which are such that the diffusion length of the minority carriers injected vertically therein is greater than or equal to the width of the region, which region has an elongate shape in at least a longitudinal direction, while the lateral transistor has its contour surrounded by a deep insulating layer (12).

Abstract: A strain gauge element in which the compression forces applied by at least one of the pressure members are transmitted to a first surface of the strain gauge by a cross formed by two cylindrical rods, the contact between the strain gauge (or the said pressure member) and the cross being exerted on a generating line of one of the rods (or the other rod) of the cross, permitting the said pressure member to carry out a tilting movement about the said rod (or the other rod).The reactionary compression forces applied to a second surface of the strain gauge are applied either by at least one cross or by rods.

Abstract: A TiW layer (14 and 14') between a nickel plug (16 and 16') and a silicon substrate (1) of a semiconductor device precludes the formation of nickel silicides. The nickel plugs are formed by means of an electroless nickel bath to which stabilizers are added which ensure that the contact holes (13 and 13') are filled with nickel right up to the edge.

Abstract: For the detection of an amplitude transient in a field of elements having a multivalent amplitude distribution by comparison of amplitude values of neighbouring elements, the amplitude transient is further localised by calculating an interpolation point as a function of amplitude values around the detected amplitude transient, said interpolation point being indicative of the location of the amplitude.

Abstract: A semiconductor integrated circuit including a detection circuit (e.g. an address transition detector) for detecting a change of a first and a second input signal. The detection circuit includes a first and a second resettable delay circuit and a gate circuit which is connected thereto. The gate circuit receives directly both the input signals and the output signals of the delay circuits for promptly outputting an output pulse signal with a minimum duration T for all durations of input signals.

Abstract: A depilation apparatus having a number of disc-shaped pinching plates (19) provided on a drive shaft (7) and a number of thrust cogs (41) provided on an auxiliary shaft (21), by means of which cogs the pinching plates are each tiltable about a first and a second tilting axis (81, 91) from a catching position into a pinching position in which the relevant pinching plate (19) exerts a pinching force on an adjacent pinching plate (19) tilted into the pinching position. Each pair of pinching plates positioned next to one another (19a, 19b), (19b, 19c), (19c, 19a) has a unique thrust cog (41a, 41b, 41c), so that each pinching plate (19) is in cooperation with each of its two adjacent pinching plates (19) and the hair catching range of the pinching plates (19) extends over the entire depilation opening (3). The thrust cogs (41a, 41b, 41c) are provided on the auxiliary shaft (21) at mutual angles of 120.degree.

Abstract: A semiconductor device comprising a support (1) provided with a groove (2) having walls (3 and 4), on which conductors (6 and 7) are present, which conductors extend at least partially around the support (1), and with a semiconductor element (11) which is present in the groove and makes electrical contact with the conductors on the walls. The semiconductor element (11) is clamped in the groove (2), thus making electrical contact with conductors (6 and 7) on walls (3 and 4). Since the semiconductor element (11) is held clamped-in between the conductors (6 and 7) on the walls (3 and 4), it is achieved that both a mechanical and an electrical connection is realized between semiconductor element (11) and support (1) in a single process step and in a simple manner.

Abstract: The invention relates to an X-ray diffractometer device, comprising an X-ray source, a collimator device for the source, a sample support, a collimator device for the beam reflected by the sample and a counter producing an output signal in the form of a voltage which is proportional to the number of photons reflected by the sample. This device furthermore includes a motor drive for the sample support, recording means for the signal Y originating from the proportional counter as a function of the angle .theta. between the plane of incidence of the sample and the incident beam, denoted X, mechanical means having a support for a plurality of filters having different coefficients of absorption and including a motor drive for this filter support, data processing means for selecting one of the filters of the filter support and for controlling the motor drive of the sample support, the motor drive of the filter support and the recording means, respectively.

Abstract: An X-ray examination apparatus includes a sensor matrix (41) with sensors (1) which are arranged in rows and columns and each of which comprises an X-ray sensitive photosensor element (11) and a storage capacitance (12) which is connected parallel thereto. First electrodes of the sensors are connected to a counter-electrode (2) which receives a direct voltage, second electrodes being connected to an electric switch (13) provided for each sensor. For exposure measurement the currents flowing through the counter-electrode (electrodes) (2) and/or the electric switches (13) after the brief closing of the electric switches (13) and before the reading of the charges are used to measure and/or correct the exposure of groups of the sensors during the execution of an X-ray exposure.

Abstract: The invention relates to an X-ray imaging system, comprising an X-ray image intensifier tube in which the electron-optical system can be adjusted to a number of different image formats. By making the image format increase or decrease visibly on the exit screen in the event of a change of image format, annoying visual adjustment effects are avoided and a patient can be continuously observed also in the event of a change of format. Because of the gradual high-voltage variation of the power supply for the electron-optical system, associated with a visible variation of the image format, the output resistance of the power supply circuit may be high. Furthermore, due to the gradual change of the mean intensity on the exit screen of the X-ray image intensifier tube, the control behavior of the automatic exposure control and the automatic gain control of the X-ray imaging system are influenced in a positive sense.

Abstract: To determine the asymmetry of the line spread function in digital imaging systems, two modulation-transfer functions are calculated by differentiation of the edge spread function followed by Fourier transformation. To that end a method is used in which a radiation intensity distribution spatially modulated by a series of equidistant elongated block elements in a test object is incident upon an input screen of a detector which is connected to a digital data processing device for storing detector signal values in memory locations which correspond to picture elements of the input screen.

Abstract: An imaging apparatus has an imaging system (PL) and a focus detection device for determining a deviation between the image plane of the imaging system and a second plane (WS) on which imaging is to take place. The focus error detection system includes a radiation source (S) which supplies a beam (b.sub.f) having a wide wavelength band, an object grating (G.sub.1) and an image grating (G.sub.2) which are imaged onto each other via the second plane. In the focus detection system a reference beam (b.sub.r) which is reflected by the outer surface (RP) of the imaging system can be used in combination or not in combination with the wideband beam and the gratings. By using a number of such focus detection systems a tilt detection device can be realized for detecting the position of the second plane (WS) with respect to the image plane.

Abstract: A semiconductor diode laser (1) with a monitor diode (2) includes a semiconductor body with a substrate (4) and a superimposed layer structure (5) having an active layer (6) and a pn junction (7) with which radiation (24) can be generated. The monitor diode (2) is separated from the diode laser by a groove (10) which extends into the substrate (4) and of which one of the walls forms an end face of the laser. The groove (10) and the monitor diode (2) are present at the side where the main radiation beam (24) emerges, while the active layer (6) extends over at most only a small portion, preferably at most 20%, of the length of the monitor diode (2). The length in the monitor diode over which absorption takes place is preferably smaller than the absorption length for the emitted laser radiation.

Abstract: In the PCVD method glass is deposited in layers on the inner wall of a glass tube by heating the tube to a temperature between 1100.degree. and 1300.degree. C., by passing a reactive gas mixture through the glass tube from a gas inlet side at a pressure between 1 and 30 hPa, by forming a plasma in the interior of the glass tube, and by reciprocating the plasma between two reversal points. After a quantity of glass corresponding to the desired fiber optical construction has been deposited, the tube is collapsed to form a solid preform from which optical fiber are draw. The range of nonconstant deposition geometry at the preform entrance, (i.e. on the gas inlet side), is reduced by interrupting the reciprocating movement of the plasma at the reversal point on the gas inlet side.

Abstract: The invention relates to an optical plug connector comprising two plugs (1,2) each of which holds an end portion of an optical waveguide (OWG 10) and which can be inserted from opposite sides into a coupling sleeve (7) until the end faces of the OWGs (10) are located against each other, and comprising a guide element (5,9) for guiding and aligning the OWGs (10), which guide element can be axially inserted in both plugs (1,2) and which extends beyond their joint area. Damage to the OWGs caused by an inappropriate attempt to form a plug connection without using a guide element is precluded in that stop elements (17,18) are provided at the plugs, which stop elements cooperate with the stop elements of the mating plug in such a manner that when the guide element (9) is not inserted, the OWG-holding elements (12) of the plugs are prevented from moving completely towards each other in an axial direction.

Abstract: A magnetic resonance imaging method for generating separate fat and water images of at least one slice utilizes a plurality of sequences acting on the slice in the presence of a steady magnetic field, each sequence including at least one first RF pulse, followed by a phase encoding gradient during which the spin resonance signal formed in the slice is detected, groups of sequences being formed with a position in time of the measuring gradient and/or a further RF pulse, if any, which differs from one group to another, the number of sequences per slice being twice as large as necessary for the formation of a similar image without fat/water separation. The phase encoding gradient is varied in steps from one sequence to another. The separate fat and water images (F,W) are formed from the resultant spin resonance signals by 2D Fourier transformation.

Abstract: An infrared detector device for at least two wavelengths, i.e. 3 to 5 microns and 8 to 14 microns, comprises detector elements (10 and 20) formed in two or more infrared-sensitive materials with different badgaps, e.g. in cadmium mercury telluride. These materials may be provided side-by-side in a single level on a substrate (3) or preferably as different levels (1 and 2) on the substrate (3). Each detector element (10 and 20) comprises a p-n junction (11 and 21) between opposite conductivity type regions (12,13 and 22,23). Electrical connections (15,25,24) extend from these regions to the substrate (3). Freedom in design and fabrication is obtained by a connection structure in which one connection (25) of the longer-wavelength response element (20) contacts both the semiconductor material (2) of that element (20) and the larger-bandgap material (1) of the shorter-wavelength response element (10), at a side-wall (42) of both materials.