Abstract: The invented method produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes a step of producing an amorphous region on the silicon body using ion implantation, for example, a step of forming a metal layer such as titanium, cobalt or nickel in contact with the amorphous region, and a step of irradiating the metal with intense light from a source such as a laser, to cause metal atoms to diffuse into the amorphous region to form an alloy region with a silicide composition. In an application of the invented method to the manufacture of a MISFET device, the metal layer is preferably formed with a thickness that is at least sufficient to produce a stoichiometric proportion of metal and silicon atoms in the amorphous region of the gate of the MISFET device.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A high-speed semiconductor transistor and process for forming same. The process includes forming, in a Si substrate (10), spaced apart shallow trench isolations (STIs) (20), and a gate (36) atop the substrate between the STIs. Then, regions (40,44) of the substrate on either side of the gate are either amorphized and doped, or just doped. In certain embodiments of the invention, extension regions (60,62 or 60′,62′) and deep drain and deep source regions (80, 84 or 80′,84′) are formed. In other embodiments, just deep drain and deep source regions (80, 84 or 80′, 84′) are formed. A conformal layer (106) is then formed atop the substrate, covering the substrate surface (11) and the gate. The conformal layer can serve to absorb light and/or to distribute heat to the underlying structures. Then, at least one of front-side irradiation (110) and back-side irradiation (116) is performed to activate the drain and source regions and, if present, the extensions.

Abstract: A simple −1X, catadioptric projection relay system (e.g., a modified Wynne-Dyson relay) is combined with a linear scanning and object and image indexing systems to provide good imagery over a useful field which is two or more times wider than the field size of the projection system and arbitrarily long. The projection system has opposed and parallel object and image planes and produces an image in which object and image vectors in one direction are parallel and in a normal direction are opposed. The reticle and substrate are clamped and scanned together in the parallel direction and are indexed in the normal direction by equal and opposite amounts between scans. An example shows how a 2.5 micron resolution, i-line projection system with a 300 mm wide field could be used to expose a 550 mm wide substrate In two scans to yield a very high throughput.

Abstract: A simplified and cost reduced process for fabricating a field-effect transistor semiconductor device (104) using laser radiation is disclosed. The process includes the step of forming removable first dielectric spacers (116R) on the sides (120a, 120b) of the gate (120). Dopants are implanted into the substrate (100) and the substrate is annealed to form an active deep source (108) and an active deep drain (110). The sidewall spacers are removed, and then a blanket pre-amorphization implant is performed to form source and drain amorphized regions (200a, 200b) that include respective extension regions (118a, 118b) that extend up to the gate. A layer of material (210 is deposited over the source and drain extensions, the layer being opaque to a select wavelength of laser radiation (220). The layer is then irradiated with laser radiation of the select wavelength so as to selectively melt the amorphized source and drain extensions, but not the underlying substrate.

Abstract: An method of and apparatus (10) for performing laser thermal processing (LTP) of a workpiece (74) having one or more workpiece fields (78). The apparatus includes a pulsed, solid state laser light source (14) having more than 1000 spatial modes (M) and capable of emitting one or more pulses of radiation with a temporal pulse length between 1 nanosecond and 1 microsecond, a workpiece stage (70) for supporting the workpiece, and an illumination optical system having an exposure field (64). The system is arranged between the laser light source and the workpiece stage so as to illuminate within the exposure field at least one of the one or more workpiece fields with the one or more pulses of radiation, with an irradiance uniformity of less than ±5%. The method and apparatus is particularly well-suited for LTP processing of workpieces which require a single pulse or only a few pulses of high-irradiance radiation.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. Tne reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A light tunnel apparatus (200 or 300) having an output end (56 or 98), for uniformizing light (L) that travels through a light tunnel (30 or 80). The apparatus comprises a light tunnel having first and second sides (36, 40 or 86, 90), and one or more AO modulators (210 or 310) respectively arranged on at least one of the first and second sides. The AO modulators are arranged such that activating the one or more of them causes at least one of the first and second sides to be displaced. This displacement changes the path of light traveling through the light tunnel by an amount sufficient to reduce illumination non-uniformities at the output end. The light tunnel may be a hollow light tunnel (30) with reflective inner surfaces, or a solid light tunnel (80) with a refractive index. A method of uniformizing illumination using a light tunnel is also disclosed.

Abstract: The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed.

Abstract: A folded light tunnel apparatus and method of providing light with a high degree of spatial uniformity in a compact arrangement. The light tunnel (100, 190, 300, 350) comprises plurality of prisms (110, 310) having a different cross-sectional dimension (W) and at least one beveled end (110E) having a corresponding beveled end face (110F) through which light reflected by the beveled end passes. The plurality of prisms are arranged adjacent one another in a either two-dimensional or three dimensional stack, with each beveled end face arranged adjacent another beveled end face such that light reflected from one beveled end is received by said adjacent beveled end face and coupled into the adjacent prism. The width of the prisms is governed by a scaling factor (K or K′) that depends on whether the prism stack is two-dimensional or three-dimensional. Designing the light tunnel according to the scaling factor allows for the light tunnel to be theoretically 100% efficient in the transmission of light.

Abstract: A liquid containment device for capturing and retaining any liquid falling into the device, such as from a leak, spill or run-off of another liquid container, where the device is designed to fit between the parallel rails of a railroad track with a railroad car positioned above, comprising a generally rectilinear pan or tray and gasket members sealing the space between the pan and the rails. Multiple pans may be connected in line through connector fittings in their end walls, or drain conduits may be connected to the fittings for removal of the liquid from the pan. Apertured grating members and absorbent mats may be placed within the pans. The pans may be used in conjunction with lateral pans positioned on the outside of the rails.

Abstract: The invented apparatus can be used to monitor the radiant energy delivered to a substrate for treatment thereof. The radiant energy can be laser light or light generated by a flash-lamp, for example. The apparatus includes an energy-tapping member such as a beam splitter, that is positioned between a source and optical element(s) used to generate and modify radiant energy, and a substrate to be treated with the radiant energy. The energy-tapping member receives radiant energy from the source and optical element(s), and divides the radiant energy from the source and optical element(s) into two portions. The first portion of radiant energy travels from the energy-tapping member to the substrate for treatment thereof. The apparatus includes an energy sensor such as a photodiode, arranged to receive the second portion of radiant energy. The energy sensor generates a signal indicative of the radiant energy supplied to the substrate.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: The invented method can be used to melt and recrystallize the source and drain regions of an integrated transistor device(s) using a laser, for example. The invented method counteracts shadowing and interference effects caused by the presence of the gate region(s) during annealing of the source and drain regions with radiant energy generated by a laser, for example. The invented method includes forming a radiant energy absorber layer over at least the gate region(s) of an integrated transistor device(s), and irradiating the radiant energy absorber layer with radiant energy to generate heat in the source and drain regions as well as in the radiant energy absorber layer. The heat generated in the radiant energy absorber layer passes through the gate region(s) to portions of source and drain regions of the integrated transistor device(s) adjacent the gate region(s).

Abstract: The invented method can be used to form silicide contacts to an integrated MISFET device. Field isolation layers are formed to electrically isolate a portion of the silicon substrate, and gate, source and drain regions are formed therein. A polysilicon runner(s) that makes an electrical connection to the integrated device, is formed on the isolation layers. The structure is subjected to ion implantation to amorphized portions of the silicon gate, source, drain and runner regions. A metal layer is formed in contact with the amorphized regions, and the metal layer overlying the active region of the integrated device is selectively irradiated using a mask. The light melts part of the gate, and amorphized source and drain regions while the remaining portions of the integrated device and substrate remain in their solid phases. Metal diffuses into the melted gate, source and drain regions which are thus converted into respective silicide alloy regions.

Abstract: A method of forming a silicide region (80) on a Si substrate (10) in the manufacturing of semiconductor integrated devices, a method of forming a semiconductor device (MISFET), and a device having suicide regions formed by the present method. The method of forming a silicide region involves forming a silicide region (80) in the (crystalline) Si substrate having an upper surface (12) and a lower surface (14). The method comprises the steps of first forming an amorphous doped region (40) in the Si substrate at or near the upper surface, to a predetermined depth (d). This results in the formation of an amorphous-crystalline interface (I) between the amorphous doped region and the crystalline Si substrate. The next step is forming a metal layer (60) atop the Si substrate upper surface, in contact with the amorphous doped region. The next step involves performing backside irradiation with a first radiation beam (66).

Abstract: A liquid containment device for capturing and retaining any liquid falling into the device, such as from a leak, spill or run-off of another liquid container, where the device is designed to fit between the parallel rails of a railroad track with a railroad car positioned above, comprising a generally rectilinear pan or tray and a removable cover which directs rain water into a drain opening which corresponds to an apertured drain column rising from the bottom of the pan, such that with the cover in place rain water is directed into the drain column and passed underneath the pan rather than into the pan itself. Multiple pans may be connected in line through connector fittings in their end walls, or drain conduits may be connected to the fittings for removal of the liquid from the pan. Apertured grating members and absorbent mats may be placed within the pans. The pans may be used in conjunction with lateral pans positioned on the outside of the rails.

Abstract: The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures.

Abstract: A collapsible liquid containment device having a floor, side walls and peripheral skirt made of a flexible, foldable, liquid-impermeable material, where the side walls are supported by foldable brace members having an angled buttress member and an insertion member joined by a hinge, the buttress members being attached to the skirt. The insertion members are inserted into vertical pockets mounted on the exterior of the side walls, and the upper rim of the side walls is provided with a retention flap having a lower opening which receives the hinged joint between the buttress member and the insertion member. Preferably a rim support tab is affixed to the hinged joint to support the uppermost portion of the side wall. The brace members can be folded into a flat configuration when the insertion member is removed from the vertical pockets, allowing the entire device to be collapsed and folded.