Abstract: A process for activating a doped region (80) or amorphized doped region (34) in a semiconductor substrate (10). The process includes the steps of doping a region of the semiconductor substrate, wherein the region is crystalline or previously amorphized. The next step is forming a conformal layer (40) atop the upper surface (11) of the substrate. The next step is performing at least one of front-side and backside irradiation of the substrate to activate the doped region. The activation may be achieved by heating the doped region to just below the melting point of the doped region, or by melting the doped region but not the crystalline substrate. An alternative process includes the additional step of forming the doped region (amorphized or unamorphized) within or adjacent a deep dopant region (60) and providing sufficient heat to the deep dopant region through at least one of front-side and backside irradiation so that the doped region is activated through explosive recrystallization.

Abstract: Method for controlling heat transferred to a workpiece (W) process region (30) from laser radiation (10) using a thermally induced reflectivity switch layer (60). A film stack (6) is formed having an absorber layer (50) atop the workpiece with a portion covering the process region. The absorber layer absorbs and converts laser radiation into heat. Reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer comprises one or more layers, e.g. thermal insulator and reflectivity transition layers. The reflective switch layer covering the process region has a temperature related to the temperature of the process region. Reflectivity of the switch layer changes from a low to a high reflectivity state at a critical temperature of the process region, limiting radiation absorbed by the absorber layer by reflecting incident radiation when switched. This limits the amount of heat transferred to the process region from the absorber layer.

Abstract: A method of the invention comprises forming a partial absorber layer (PAL) over at least one integrated transistor device formed on a semiconductor substrate, and exposing the PAL to radiant energy. A first portion of the radiant energy passes through the PAL and is absorbed in the source and drain regions adjacent a gate region of the integrated transistor device and in the semiconductor substrate underneath the field isolation regions of the integrated device. A second portion of the radiant energy is absorbed by the PAL and is thermally conducted from the PAL to the source and drain regions. The first and second portions of the radiant energy are sufficient to melt the source and drain regions to anneal the junctions of the integrated device.

Abstract: An image stabilization apparatus and method for stabilizing the imaging of a high-performance optical system prone to imaging instabilities from thermal effects. Thermal instabilities within the lens, such as convection, can result in image placement errors in a high-performance optical system. The apparatus includes a heating element arranged on the upper surface of the optical system to provide heat to one or more gas-filled spaces in the optical system. An insulating blanket covers a portion of the optical system to uniformize the heating of the optical system and increase efficiency of the apparatus. The gas in the spaces is heated so that the warmer gases reside near the upper portion of the optical system, while the cooler gases reside near the lower portion of the optical system. This creates a stable thermal environment within the lens system, thereby stabilizing the imaging. Optionally, gas can be flowed over the lower surface to keep heat from heating the lower portion of the optical system.

Abstract: A radiation shield device (100) and method, the apparatus comprising either an absorbing shield (130), a scattering shield (200) or an absorbing and scattering shield (300) arranged in a processing tool (50) that irradiates a workpiece (70) with high-irradiance radiation (80) from a light source (78). The processing tool has a tool portion (66) having an irradiance damage threshold (IDT). The radiation shield device is designed to intercept a portion of the high-irradiance radiation that would otherwise be incident the tool portion, and to ensure that radiation exiting the particular shield comprising the radiation shield device and incident the tool portion has an irradiance below the tool portion irradiance damage threshold. The method includes using the radiation shield device in processing a workpiece using a processing tool.

Abstract: An apparatus and method for breaching and venting sealed inner containers disposed within a drum, where the drum is evacuated to created a pressure differential resulting in expansion and rupture of the inner containers. The temperature may also be reduced to below freezing in the drum to reduce the elasticity of the inner containers, and the drum may also be pressurized to implode and rupture the inner containers.

Abstract: The closed loop embodiment includes a pulsed laser controller to selectively operate a pulsed laser in a lower-power probe mode or a higher power operational mode. In lower-power probe mode, values of eT (total radiation energy flooding ICs on a silicon wafer), er (fraction of eT specularly reflected), es (fraction of eT scattered) and es (fraction of eT transmitted through wafer) are obtained. A value for ea (fraction of eT absorbed wafer) is calculated i.e. ea=eT−(er+es+et), and ea used by pulsed laser controller with pulsed laser in higher power operational mode to adjust pulsed laser fluence over the duration of a pulse to provide flooding radiation energy sufficient to melt an amorphized silicon surface layer beneath radiation-absorbent material, yet insufficient to melt crystalline silicon or ablate radiation-absorbent material. Open loop embodiment substitutes a separate low-power probe laser for operation in lower-power probe mode.

Abstract: A light tunnel (24) comprising a hollow light tunnel body (30) or a solid light tunnel body (80) having a central axis (A1 or A2), a reflective surface (42 or 84) facing the axis, and an output end (54 or 94) having an edge (60 or 106) with a chamfered surface (120 or 130) formed on the edge. The chamfered surface is designed to alter the reflective properties of the reflective surfaces of the light tunnel body near the output end so as to reduce or eliminate edge ringing from the light tunnel body edge. In the case of a knife-edge (340) placed at the output end of the light tunnel body, knife-edge ringing is eliminated by providing a light source (310) in the form of a laser with a large number of spatial modes (M2>30). The present invention is expected to be most useful in cases where time-averaging or other interference-eliminating means prove impossible or impractical, such as with applications requiring only one or a few high-irradiance light pulses that need to uniformly irradiate a workpiece.

Abstract: A system and method of compensating for image smear that arises when imaging onto a moving workpiece with a single pulse of radiation. The system includes a mask frame capable of supporting a mask to be imaged. The mask frame is operatively connected to a drive unit and is capable of moving in the mask plane. The mask frame is driven in an oscillatory fashion in the mask plane so that when a pulse of radiation illuminates the mask, the mask image moves in the same direction as the moving workpiece, thereby reducing image smear. The present invention is particularly applicable to single-pulse-exposure systems that utilize pulsed radiation sources having relatively long pulse duration, such as flash-lamps or certain types of lasers.

Abstract: A filter vent fitting for a drum which allows for the passage of hydrogen gas but precludes the passage of radioactive particulates, the fitting having evacuation/pressurization conduits which allow the drum to be evacuated or pressurized, and cryogenic/sapling conduits which allow the temperature of the drum to be reduced and samples drawn from the interior which are not filtered. Preferably a cap member is provided with a pressure balancing bore which is active during the evacuation and pressurization steps.

Abstract: An apparatus in accordance with this invention includes an alignment mark that is formed in a substrate. The alignment mark extends across a dice line so that, upon dicing the substrate, the mark is exposed in the substrate's side edge. The mark is formed at a predetermined distance from a position at which a feature is desired to be formed on the substrate's side edge using a mask. Accordingly, the mark is a positional reference that can be used for highly accurate placement of the feature on the side surface of the substrate with the mask. Preferably, the mark is formed of metal or other material enhanced to a size that is readily detectable by an alignment system with which the mark is to be used. The invention also includes methods for making the alignment mark.

Abstract: Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.

Abstract: A system and method for performing alignment of a substrate using alignment marks on the backside of a substrate supported by a movable chuck is disclosed. The system includes an imaging optical system arranged such that the movable chuck can position one end of the optical system either adjacent the front surface of the substrate or near the front surface but outside the perimeter of the substrate. In one embodiment, secondary optical systems are arranged within the chuck at the chuck perimeter so as to be in optical communication with corresponding alignment marks. The chuck is movable so that the imaging optical system can be placed in optical communication with the second optical system and image the alignment marks onto a detector. The detector converts the alignment mark images into digital electronic images, which are stored in a computer system and processed. The chuck then moves the substrate to exposure locations based on the result of processing the images.

Abstract: Disclosed are first and second embodiments of a 3-channel probe-plate structure of the fiber-optic interferometer, wherein low-coherent-length light from a superluminescent light-emitting diode is split by a tree splitter into three light branches which are coupled as separate light inputs to the probe-pate structure by single-mode, polarization-preserving optical fibers. For each of the 3 channels, the first embodiment of the probe-plate structure comprises an integrated polarizing lithium-niobate Y splitter-modulator for deriving separate reference-arm light and probe-arm light.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g.

Abstract: The respective magnets of each of a plurality of spaced Halbach magnet arrays in both the X and Y directions that incorporate in the arrays in both directions, the magnets having a field oriented parallel to the Z axis in alternately the positive and negative directions. The magnets in each array in each direction that are not shared by the crossing Halbach magnet arrays each has a horizontal field orientation parallel to either the X or the Y axis with the filed direction in each instance pointing toward the adjacent magnet having its field oriented in the positive Z direction. Additionally, four layers of coils of wire in separate X-Y planes in substantially vertical alignment with each other contain coils each with a selected orientation relative to the X or Y axis such that they provide levitation, lateral motion, as well as roll, pitch and yaw adjustments to the magnet array forming an X-Y stage for precision positioning an object located on the top surface of the magnet.

Abstract: A method of forming a silicide region (80) on a Si substrate (10) in the manufacturing of semiconductor integrated devices, a method of forming a semiconductor device (MISFET), and a device having suicide regions formed by the present method. The method of forming a suicide region involves forming a silicide region (80) in the (crystalline) Si substrate having an upper surface (12) and a lower surface (14). The method comprises the steps of first forming an amorphous doped region (40) in the Si substrate at or near the upper surface, to a predetermined depth (d). This results in the formation of an amorphous-crystalline interface (I) between the amorphous doped region and the crystalline Si substrate. The next step is forming a metal layer (60) atop the Si substrate upper surface, in contact with the amorphous doped region. The next step involves performing backside irradiation with a first radiation beam (66).

Abstract: The invented method produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes a step of producing an amorphous region on the silicon body using ion implantation, for example, a step of forming a metal layer such as titanium, cobalt or nickel in contact with the amorphous region, and a step of irradiating the metal with intense light from a source such as a laser, to cause metal atoms to diffuse into the amorphous region to form an alloy region with a silicide composition. In an application of the invented method to the manufacture of a MISFET device, the metal layer is preferably formed with a thickness that is at least sufficient to produce a stoichiometric proportion of metal and silicon atoms in the amorphous region of the gate of the MISFET device.